JP6764305B2 - レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法 - Google Patents
レーザ照射装置、半導体装置の製造方法、及び、レーザ照射装置の動作方法 Download PDFInfo
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- JP6764305B2 JP6764305B2 JP2016196491A JP2016196491A JP6764305B2 JP 6764305 B2 JP6764305 B2 JP 6764305B2 JP 2016196491 A JP2016196491 A JP 2016196491A JP 2016196491 A JP2016196491 A JP 2016196491A JP 6764305 B2 JP6764305 B2 JP 6764305B2
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- 230000000052 comparative effect Effects 0.000 description 10
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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Description
先ず、図15を参照して、比較例1にかかるレーザアニール装置400について説明する。レーザアニール装置400は、例えばシリコン基板やガラス基板に設けられたアモルファスシリコン膜にレーザ光を照射することでポリシリコン膜を形成する装置である。レーザアニール装置400は、処理室401と、移動式搬送ステージユニット402と、光学系403と、レーザ発振器404と、を備えている。
次に、図16を参照して、比較例2にかかるレーザアニール装置405について説明する。レーザアニール装置405は、例えばシリコン基板やガラス基板に設けられたアモルファスシリコン膜にレーザ光を照射することでポリシリコン膜を形成する装置である。レーザアニール装置405は、処理室406と、浮上式搬送ステージ407と、光学系408と、レーザ発振器409と、図示しないワーク搬送ユニットと、を備えている。
以下、図1から図3を参照して、実施の形態1にかかるレーザ照射装置が適用されたレーザアニール装置について説明する。なお、実施の形態1にかかるレーザ照射装置は、レーザアニール装置の他に、レーザ剥離装置に適用してもよい。
図1及び図2に示すように、実施の形態1にかかるレーザアニール装置1は、例えばシリコン基板やガラス基板に設けられたアモルファスシリコン膜にレーザ光を照射することで、アモルファスシリコン膜を結晶化してポリシリコン膜を形成する装置である。レーザアニール装置1は、処理室2と、搬送ステージとしての浮上式搬送ステージ3と、レーザ発振器4と、光学系5と、着脱アクチュエータ6と、測定器としてのビームプロファイラ7と、プロファイラアクチュエータ8と、制御部9と、を備える。なお、図2においては、説明の便宜上、レーザ発振器4、光学系5、制御部9の図示を省略している。
次に、図4〜図10を参照して、レーザアニール装置1を用いた半導体装置の製造方法を詳細に説明する。図4には、レーザアニール装置1の動作方法のフローチャートを示している。
以下、図11を参照して、実施の形態2にかかるレーザ照射装置が適用されたレーザアニール装置について説明する。ここでは、実施の形態2が上記実施の形態1と異なる点を中心に説明し、重複する説明は省略する。
以下、図12を参照して、実施の形態3にかかるレーザ照射装置が適用されたレーザアニール装置について説明する。ここでは、実施の形態3が上記実施の形態1と異なる点を中心に説明し、重複する説明は省略する。
次に、図13及び図14を参照して、その他の実施の形態として、実施の形態1、2、3で説明したレーザ照射装置を用いた半導体装置の製造方法、及び半導体装置について説明する。
まず、上記で説明したレーザ照射装置を用いた半導体装置の製造方法について説明する。本実施の形態では、レーザ照射装置としてレーザアニール装置を用いることで、基板上に形成した非晶質膜にレーザ光を照射して非晶質膜を結晶化させることができる。例えば、半導体装置はTFT(薄型トランジスタ、Thin Film transistor)を備える半導体装置であり、この場合はアモルファスシリコン膜にレーザ光を照射して結晶化させてポリシリコン膜を形成することができる。ポリシリコン膜は、TFTを構成する。
次に、TFTを備える半導体装置を用いたデバイスの一例として、有機ELディスプレイについて説明する。図14は、有機ELディスプレイの概要を説明するための断面図であり、有機ELディスプレイの画素回路を簡略化して示している。図14に示す有機ELディスプレイ300は、各画素PXにTFTが配置されたアクティブマトリクス型の表示装置である。
2 処理室
3 浮上式搬送ステージ
4 レーザ発振器
5 光学系
6 着脱アクチュエータ
7 ビームプロファイラ
8 プロファイラアクチュエータ
9 制御部
10 搬送面
11 搬送ステージ本体
12 着脱部
L レーザ光
S 開口
W ワーク
Claims (19)
- 以下を有するレーザ照射装置:
レーザ光を発生するレーザ発振器;
前記レーザ光が照射されるワークを浮上させて搬送するための搬送ステージ;および
前記レーザ光のビームプロファイルを測定するための測定器、
ここで、
前記搬送ステージは、前記ワークと対向する搬送面と、前記搬送面と反対側の下面を有し、
前記測定器は、前記搬送ステージの前記下面の下方に位置し、
前記搬送ステージは、その一部に取り外し可能な着脱部を有し、
前記着脱部を前記搬送ステージから取り外すことにより、前記搬送面から前記下面に達する開口部が設けられ、
前記測定器によって、前記開口部を介して、前記レーザ光のビームプロファイルを測定することが可能となる。 - 前記着脱部は、前記レーザ光の光軸上に位置する請求項1記載のレーザ照射装置。
- 前記測定器は、前記開口部の位置まで移動可能である請求項1記載のレーザ照射装置。
- 前記測定器は、前記レーザ光の焦点位置のビームプロファイルを測定可能である請求項1記載のレーザ照射装置。
- 前記開口部および前記測定器は、前記レーザ光の光軸上に位置している請求項1記載のレーザ照射装置。
- 前記レーザ光の平面形状は長軸と短軸を有する長方形であり、
前記測定器は前記長軸に沿って移動可能である請求項1記載のレーザ照射装置。 - 前記搬送ステージから前記ワークに対して気体を噴射させて前記ワークを浮上させる請求項1記載のレーザ照射装置。
- 前記ワークは非晶質半導体膜を含み、前記レーザ光を前記非晶質半導体膜に照射することで多結晶半導体膜が形成可能な請求項1記載のレーザ照射装置。
- 以下の工程を含む半導体装置の製造方法:
(a)搬送ステージ上を浮上させて、非晶質半導体膜を含むワークを搬送する工程;
(b)前記非晶質半導体膜にレーザ光を照射し、多結晶半導体膜を形成する工程;
(c)前記搬送ステージの着脱部を取り外し、前記搬送ステージの一部に開口部を設ける工程;
(d)前記開口部を介して、前記レーザ光のビームプロファイルを測定する工程。 - 前記工程(c)と(d)の間に、さらに、
前記レーザ光のビームプロファイルを測定するための測定器を、前記開口部の位置まで移動する工程
を含む請求項9記載の半導体装置の製造方法。 - 前記開口部および前記レーザ光のビームプロファイルを測定する測定器は、前記レーザ光の光軸上に位置している請求項9記載の半導体装置の製造方法。
- 前記工程(a)において、前記搬送ステージから前記ワークに対して気体を噴射させて前記ワークを浮上させる請求項9記載の半導体装置の製造方法。
- 前記ワークはガラス基板を含む請求項9記載の半導体装置の製造方法。
- 前記多結晶半導体膜は薄膜トランジスタを構成する請求項9記載の半導体装置の製造方法。
- 前記薄膜トランジスタは液晶ディスプレイ又は有機ELディスプレイを制御するために用いられる請求項14記載の半導体装置の製造方法。
- 以下の工程を含むレーザ照射装置の動作方法:
(a)搬送ステージ上を浮上させてワークを搬送する工程;
(b)前記ワークにレーザ光を照射する工程;
(c)前記搬送ステージの着脱部を取り外し、前記搬送ステージの一部に開口部を設ける工程;
(d)前記開口部を介して、前記レーザ光のビームプロファイルを測定する工程。 - 前記工程(c)と(d)の間に、さらに、
前記レーザ光のビームプロファイルを測定するための測定器を、前記開口部の位置まで移動する工程
を含む請求項16記載のレーザ照射装置の動作方法。 - 前記開口部および前記レーザ光のビームプロファイルを測定する測定器は、前記レーザ光の光軸上に位置している請求項16記載のレーザ照射装置の動作方法。
- 前記工程(a)において、前記搬送ステージから前記ワークに対して気体を噴射させて前記ワークを浮上させる請求項16記載のレーザ照射装置の動作方法。
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