JP7306860B2 - レーザ処理装置 - Google Patents
レーザ処理装置 Download PDFInfo
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- JP7306860B2 JP7306860B2 JP2019075288A JP2019075288A JP7306860B2 JP 7306860 B2 JP7306860 B2 JP 7306860B2 JP 2019075288 A JP2019075288 A JP 2019075288A JP 2019075288 A JP2019075288 A JP 2019075288A JP 7306860 B2 JP7306860 B2 JP 7306860B2
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- 239000000758 substrate Substances 0.000 claims description 303
- 238000011049 filling Methods 0.000 claims description 155
- 239000007789 gas Substances 0.000 claims description 86
- 239000011261 inert gas Substances 0.000 claims description 84
- 239000012298 atmosphere Substances 0.000 claims description 37
- 239000011521 glass Substances 0.000 claims description 30
- 239000011148 porous material Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 180
- 229910021417 amorphous silicon Inorganic materials 0.000 description 83
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 49
- 238000007667 floating Methods 0.000 description 48
- 239000010409 thin film Substances 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 25
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 230000003287 optical effect Effects 0.000 description 23
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 9
- 229910001873 dinitrogen Inorganic materials 0.000 description 9
- 238000005224 laser annealing Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
- B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
- B23K37/0408—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work for planar work
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
Description
<レーザ処理装置の全体構成について>
本実施の形態におけるレーザ処理装置1の全体構成について、図1を参照して説明する。図1は、本実施の形態におけるレーザ処理装置1の模式的な構成を示す断面図である。
次に、本実施の形態におけるレーザ処理装置1のステージ2の詳細構成について、図3~図5を参照して説明する。
図6は、本発明者が検討した第1検討例のレーザ処理装置101の模式的な構成を示す断面図であり、上記図1に相当するものである。
次に、本実施の形態のレーザ処理装置の主要な特徴と効果について説明する。図12~図14は、本実施の形態のレーザ処理装置1の効果を説明するための説明図であり、上記図8に相当する位置での断面図が示されている。
本実施の形態のレーザ処理装置1は、例えば、表示装置の製造工程に好適に用いることができる。
次に、本実施の形態における表示装置の製造工程の概要について、液晶表示装置の製造工程を例に挙げて、図17を参照しながら簡単に説明する。図17は、本実施の形態における表示装置を製造する製造工程の流れを示すフローチャートである。
続いて、本実施の形態における表示装置の詳細な構成について説明する。図18は、本実施の形態における表示装置の構成例を示す図である。
続いて、薄膜トランジスタ46のデバイス構造について説明する。図20は、薄膜トランジスタのデバイス構造を示す断面図である。
次に、薄膜トランジスタ(46)の製造工程について説明する。図21は、薄膜トランジスタの製造工程の流れを示すフローチャートである。
ここで、チャネル膜(51)の形成工程の詳細について説明する。図22は、チャネル膜の形成工程の流れを説明するフローチャートである。
次に、本実施の形態のレーザ処理装置1の第1変形例について説明する。
2,102,202 ステージ
3,103 基板
3a,103a アモルファスシリコン膜
4 定盤
5,5a,5b,5c 上部構造体
6 表面側部材
7 ベース部
8 充填部材
10 中間板
11a,11b,11c 接着層
12a,12b 空間
13a,13b 貫通孔
20,20a レーザ光
20b レーザ光照射領域
21 レーザ光発生部
22 光減衰器
23 光学系モジュール
23a 反射ミラー
23b シールウィンドウ
24 密閉筐体
24a シールウィンドウ
25 処理室
26 シールボックス
27 開口部
28 基板加熱領域
31 大画面テレビジョン
32 スマートフォン
40 画素
41 画素部
42 走査線駆動回路
43 信号線駆動回路
44,45,45A 配線
46 薄膜トランジスタ
47 液晶素子
50 基板
51 チャネル膜
52 ゲート絶縁膜
53 ゲート電極
54 層間絶縁膜
55a ソース電極
55b ドレイン電極
56 保護膜
Claims (12)
- 以下を含むレーザ処理装置:
表面および前記表面とは反対側の裏面を有し、前記表面から気体を噴出させることで基板を浮上搬送可能なステージ;
前記基板にレーザ光を照射するレーザ発振器;および
前記ステージの上方であって、前記レーザ光の焦点位置と平面視において重なる位置に配置された不活性ガスを噴出するためのガス噴出口、
ここで、前記ステージの前記表面は第1の上部構造体および第2の上部構造体で構成され、
前記第1の上部構造体および前記第2の上部構造体は互いに離間し、かつ対向するように配置され、
前記第1の上部構造体および前記第2の上部構造体の間の隙間と前記レーザ光の焦点位置は平面視において重なり、
前記第1の上部構造体と前記第2の上部構造体の間に前記隙間を埋めるように充填部材が配置されている。 - 前記ガス噴出口から噴出された前記不活性ガスは前記充填部材よりも下方に流動しない請求項1に記載のレーザ処理装置。
- 前記充填部材の上面は前記第1の上部構造体および前記第2の上部構造体のそれぞれの上面よりも低い位置にある請求項1または2に記載のレーザ処理装置。
- 前記第1の上部構造体および前記第2の上部構造体のそれぞれの上面の高さは、互いに同じである請求項3に記載のレーザ処理装置。
- 前記レーザ光の前記ステージの前記表面上での平面形状は長軸と短軸を有する長方形であり、
前記充填部材は前記長軸の方向に沿って配置されている請求項1から4のいずれか1項に記載のレーザ処理装置。 - 前記基板はガラス基板である請求項1から5のいずれか1項に記載のレーザ処理装置。
- 前記基板には非晶質の半導体膜が形成され、前記レーザ光の照射により前記非晶質の半導体膜は多結晶の半導体膜に変質する請求項1から6のいずれか1項に記載のレーザ処理装置。
- 前記第1の上部構造体は、前記気体を噴出する第1の表面側部材を有し、
前記第2の上部構造体は、前記気体を噴出する第2の表面側部材を有し、
前記充填部材は前記気体を噴出しない請求項1から7のいずれか1項に記載のレーザ処理装置。 - 前記第1の表面側部材および前記第2の表面側部材は、それぞれ多孔質体からなる請求項8に記載のレーザ処理装置。
- 前記レーザ光は、前記ガス噴出口を通過して前記基板に照射される請求項1から9のいずれか1項に記載のレーザ処理装置。
- 前記基板を前記ステージ上に浮上させながら搬送し、前記ガス噴出口から前記不活性ガスを噴出し、前記基板に前記レーザ光を照射する請求項1から10のいずれか1項に記載のレーザ処理装置。
- 前記ガス噴出口から噴出された前記不活性ガスからなる雰囲気中で、前記基板に前記レーザ光が照射される請求項1から11のいずれか1項に記載のレーザ処理装置。
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