JP2009135434A5 - - Google Patents

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Publication number
JP2009135434A5
JP2009135434A5 JP2008257262A JP2008257262A JP2009135434A5 JP 2009135434 A5 JP2009135434 A5 JP 2009135434A5 JP 2008257262 A JP2008257262 A JP 2008257262A JP 2008257262 A JP2008257262 A JP 2008257262A JP 2009135434 A5 JP2009135434 A5 JP 2009135434A5
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JP
Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor substrate
substrate
insulating layer
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JP2008257262A
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English (en)
Japanese (ja)
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JP2009135434A (ja
JP5490393B2 (ja
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Priority to JP2008257262A priority Critical patent/JP5490393B2/ja
Priority claimed from JP2008257262A external-priority patent/JP5490393B2/ja
Publication of JP2009135434A publication Critical patent/JP2009135434A/ja
Publication of JP2009135434A5 publication Critical patent/JP2009135434A5/ja
Application granted granted Critical
Publication of JP5490393B2 publication Critical patent/JP5490393B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008257262A 2007-10-10 2008-10-02 半導体基板の製造方法 Expired - Fee Related JP5490393B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008257262A JP5490393B2 (ja) 2007-10-10 2008-10-02 半導体基板の製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007265014 2007-10-10
JP2007265014 2007-10-10
JP2007285567 2007-11-01
JP2007285567 2007-11-01
JP2008257262A JP5490393B2 (ja) 2007-10-10 2008-10-02 半導体基板の製造方法

Publications (3)

Publication Number Publication Date
JP2009135434A JP2009135434A (ja) 2009-06-18
JP2009135434A5 true JP2009135434A5 (enExample) 2011-11-17
JP5490393B2 JP5490393B2 (ja) 2014-05-14

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JP2008257262A Expired - Fee Related JP5490393B2 (ja) 2007-10-10 2008-10-02 半導体基板の製造方法

Country Status (6)

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US (1) US8828844B2 (enExample)
EP (1) EP2048705A3 (enExample)
JP (1) JP5490393B2 (enExample)
KR (1) KR101484490B1 (enExample)
CN (1) CN101409216B (enExample)
TW (1) TWI453863B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5527956B2 (ja) 2007-10-10 2014-06-25 株式会社半導体エネルギー研究所 半導体基板の製造方法
JP5548351B2 (ja) * 2007-11-01 2014-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8815657B2 (en) * 2008-09-05 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
KR101752901B1 (ko) * 2009-08-25 2017-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 재생 방법, 재생 반도체 기판의 제작 방법, 및 ｓｏｉ 기판의 제작 방법
US8318588B2 (en) 2009-08-25 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
KR101731809B1 (ko) * 2009-10-09 2017-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 재생 방법, 재생된 반도체 기판의 제조 방법, 및 ｓｏｉ 기판의 제조 방법
US8314018B2 (en) * 2009-10-15 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102648490B (zh) 2009-11-30 2016-08-17 株式会社半导体能源研究所 液晶显示设备、用于驱动该液晶显示设备的方法、以及包括该液晶显示设备的电子设备
JP5836680B2 (ja) * 2010-07-27 2015-12-24 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
TWI500118B (zh) 2010-11-12 2015-09-11 Semiconductor Energy Lab 半導體基底之製造方法
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
FR2971361B1 (fr) 2011-02-04 2014-05-09 Soitec Silicon On Insulator Structure semiconductrice a surface lissée et procédé d'obtention d'une telle structure
CN102184881B (zh) * 2011-04-01 2012-08-15 百力达太阳能股份有限公司 一种硅片干法刻蚀前的整理方法
JP5725430B2 (ja) * 2011-10-18 2015-05-27 富士電機株式会社 固相接合ウエハの支持基板の剥離方法および半導体装置の製造方法
JP5780981B2 (ja) * 2012-03-02 2015-09-16 東京エレクトロン株式会社 ゲルマニウム薄膜の成膜方法
CN104218041B (zh) * 2014-08-15 2017-12-08 京东方科技集团股份有限公司 阵列基板及制备方法和显示装置
CN106322513B (zh) * 2015-07-01 2022-05-24 王冰 一种dep家用空气净化器
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
US11418168B2 (en) * 2017-05-30 2022-08-16 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method for manufacturing the same
US10965271B2 (en) * 2017-05-30 2021-03-30 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method for fabricating the same
US10553474B1 (en) 2018-08-29 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a semiconductor-on-insulator (SOI) substrate
KR102631767B1 (ko) * 2019-08-22 2024-02-01 주식회사 효산 디스플레이 제조용 기판 및 이의 제조 방법
US11152394B1 (en) * 2020-08-13 2021-10-19 Globalfoundries U.S. Inc. Structure with polycrystalline isolation region below polycrystalline fill shape(s) and selective active device(s), and related method

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH08255762A (ja) * 1995-03-17 1996-10-01 Nec Corp 半導体デバイスの製造方法
JP4103968B2 (ja) * 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JPH10284431A (ja) * 1997-04-11 1998-10-23 Sharp Corp Ｓｏｉ基板の製造方法
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
US6388652B1 (en) * 1997-08-20 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device
US6686623B2 (en) * 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
US6300227B1 (en) * 1998-12-01 2001-10-09 Silicon Genesis Corporation Enhanced plasma mode and system for plasma immersion ion implantation
EP1039513A3 (en) 1999-03-26 2008-11-26 Canon Kabushiki Kaisha Method of producing a SOI wafer
JP4379943B2 (ja) * 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
US6274463B1 (en) * 2000-07-31 2001-08-14 Hewlett-Packard Company Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method
US6300027B1 (en) * 2000-11-15 2001-10-09 Xerox Corporation Low surface energy photoreceptors
US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4230160B2 (ja) 2001-03-29 2009-02-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7119365B2 (en) * 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP4772258B2 (ja) 2002-08-23 2011-09-14 シャープ株式会社 Ｓｏｉ基板の製造方法
JP4103447B2 (ja) 2002-04-30 2008-06-18 株式会社Ｉｈｉ 大面積単結晶シリコン基板の製造方法
JP2004031715A (ja) * 2002-06-27 2004-01-29 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
KR100511656B1 (ko) * 2002-08-10 2005-09-07 주식회사 실트론 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼
TWI301641B (enExample) * 2002-09-19 2008-10-01 Ind Tech Res Inst
TWI233154B (en) * 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate
EP1427002B1 (en) 2002-12-06 2017-04-12 Soitec A method for recycling a substrate using local cutting
EP2091075A2 (en) 2002-12-06 2009-08-19 S.O.I.TEC Silicon on Insulator Technologies S.A. A method for recycling a surface of a substrate using local thinning
US20060043072A1 (en) 2003-02-05 2006-03-02 Industrial Technology Research Institute Method for planarizing polysilicon
US7399681B2 (en) * 2003-02-18 2008-07-15 Corning Incorporated Glass-based SOI structures
JP2004310056A (ja) * 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
JP4509488B2 (ja) * 2003-04-02 2010-07-21 株式会社Sumco 貼り合わせ基板の製造方法
US6767802B1 (en) * 2003-09-19 2004-07-27 Sharp Laboratories Of America, Inc. Methods of making relaxed silicon-germanium on insulator via layer transfer
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP5110772B2 (ja) * 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
JP4407384B2 (ja) 2004-05-28 2010-02-03 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
KR100898649B1 (ko) 2004-05-28 2009-05-22 가부시키가이샤 섬코 Ｓｏｉ기판 및 그 제조방법
US7316415B2 (en) * 2004-08-30 2008-01-08 Autoliv Asp, Inc. Dual chamber airbag
US7148124B1 (en) * 2004-11-18 2006-12-12 Alexander Yuri Usenko Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers
JP4934966B2 (ja) 2005-02-04 2012-05-23 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007265014A (ja) 2006-03-28 2007-10-11 Ricoh Co Ltd 人材検索システム
JP2007285567A (ja) 2006-04-14 2007-11-01 Sekisui Chem Co Ltd 人工森林浴換気システム
US7579654B2 (en) * 2006-05-31 2009-08-25 Corning Incorporated Semiconductor on insulator structure made using radiation annealing
US7608521B2 (en) * 2006-05-31 2009-10-27 Corning Incorporated Producing SOI structure using high-purity ion shower
FR2912258B1 (fr) * 2007-02-01 2009-05-08 Soitec Silicon On Insulator "procede de fabrication d'un substrat du type silicium sur isolant"
US7755113B2 (en) * 2007-03-16 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device
US7846817B2 (en) * 2007-03-26 2010-12-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101281912B (zh) * 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置
KR101484296B1 (ko) * 2007-06-26 2015-01-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 제작방법
JP5442224B2 (ja) * 2007-07-23 2014-03-12 株式会社半導体エネルギー研究所 Ｓｏｉ基板の製造方法
JP5527956B2 (ja) * 2007-10-10 2014-06-25 株式会社半導体エネルギー研究所 半導体基板の製造方法
TWI493609B (zh) * 2007-10-23 2015-07-21 Semiconductor Energy Lab 半導體基板、顯示面板及顯示裝置的製造方法

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