CN101409216B - Soi衬底的制造方法 - Google Patents

Soi衬底的制造方法 Download PDF

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Publication number
CN101409216B
CN101409216B CN2008101665350A CN200810166535A CN101409216B CN 101409216 B CN101409216 B CN 101409216B CN 2008101665350 A CN2008101665350 A CN 2008101665350A CN 200810166535 A CN200810166535 A CN 200810166535A CN 101409216 B CN101409216 B CN 101409216B
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China
Prior art keywords
single crystal
crystal semiconductor
substrate
layer
semiconductor layer
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Expired - Fee Related
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CN2008101665350A
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Chinese (zh)
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CN101409216A (zh
Inventor
大沼英人
挂端哲弥
下村明久
笹川慎也
仓田求
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
CN2008101665350A 2007-10-10 2008-10-10 Soi衬底的制造方法 Expired - Fee Related CN101409216B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007265014 2007-10-10
JP2007-265014 2007-10-10
JP2007265014 2007-10-10
JP2007-285567 2007-11-01
JP2007285567 2007-11-01
JP2007285567 2007-11-01

Publications (2)

Publication Number Publication Date
CN101409216A CN101409216A (zh) 2009-04-15
CN101409216B true CN101409216B (zh) 2012-11-07

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CN2008101665350A Expired - Fee Related CN101409216B (zh) 2007-10-10 2008-10-10 Soi衬底的制造方法

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US (1) US8828844B2 (enExample)
EP (1) EP2048705A3 (enExample)
JP (1) JP5490393B2 (enExample)
KR (1) KR101484490B1 (enExample)
CN (1) CN101409216B (enExample)
TW (1) TWI453863B (enExample)

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JP5580010B2 (ja) * 2008-09-05 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
SG178061A1 (en) * 2009-08-25 2012-03-29 Semiconductor Energy Lab Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing soi substrate
US8318588B2 (en) 2009-08-25 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate
KR101731809B1 (ko) * 2009-10-09 2017-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기판의 재생 방법, 재생된 반도체 기판의 제조 방법, 및 ｓｏｉ 기판의 제조 방법
US8314018B2 (en) * 2009-10-15 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20180030255A (ko) * 2009-11-30 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치, 액정 표시 장치의 구동 방법, 및 이 액정 표시 장치를 구비하는 전자기기
KR20180088759A (ko) * 2010-07-27 2018-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI500118B (zh) 2010-11-12 2015-09-11 半導體能源研究所股份有限公司 半導體基底之製造方法
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US11418168B2 (en) 2017-05-30 2022-08-16 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method for manufacturing the same
US10965271B2 (en) * 2017-05-30 2021-03-30 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method for fabricating the same
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Also Published As

Publication number Publication date
TWI453863B (zh) 2014-09-21
TW200943476A (en) 2009-10-16
JP2009135434A (ja) 2009-06-18
KR20090037364A (ko) 2009-04-15
EP2048705A3 (en) 2014-05-14
CN101409216A (zh) 2009-04-15
KR101484490B1 (ko) 2015-01-20
US20090111248A1 (en) 2009-04-30
EP2048705A2 (en) 2009-04-15
JP5490393B2 (ja) 2014-05-14
US8828844B2 (en) 2014-09-09

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