JP2009135448A5 - - Google Patents

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Publication number
JP2009135448A5
JP2009135448A5 JP2008270681A JP2008270681A JP2009135448A5 JP 2009135448 A5 JP2009135448 A5 JP 2009135448A5 JP 2008270681 A JP2008270681 A JP 2008270681A JP 2008270681 A JP2008270681 A JP 2008270681A JP 2009135448 A5 JP2009135448 A5 JP 2009135448A5
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JP
Japan
Prior art keywords
single crystal
crystal semiconductor
semiconductor substrate
layer
substrate
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JP2008270681A
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English (en)
Japanese (ja)
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JP2009135448A (ja
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Priority to JP2008270681A priority Critical patent/JP2009135448A/ja
Priority claimed from JP2008270681A external-priority patent/JP2009135448A/ja
Publication of JP2009135448A publication Critical patent/JP2009135448A/ja
Publication of JP2009135448A5 publication Critical patent/JP2009135448A5/ja
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JP2008270681A 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法 Withdrawn JP2009135448A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008270681A JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007285180 2007-11-01
JP2008270681A JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Publications (2)

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JP2009135448A JP2009135448A (ja) 2009-06-18
JP2009135448A5 true JP2009135448A5 (enExample) 2011-11-10

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JP2008270681A Withdrawn JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Country Status (5)

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US (1) US20090117707A1 (enExample)
JP (1) JP2009135448A (enExample)
KR (1) KR20090045123A (enExample)
CN (1) CN101425456A (enExample)
TW (1) TW200943478A (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2009687B1 (en) * 2007-06-29 2016-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device
US20090004764A1 (en) * 2007-06-29 2009-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing semiconductor device
JP2010114431A (ja) 2008-10-10 2010-05-20 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
SG163481A1 (en) 2009-01-21 2010-08-30 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
US8436362B2 (en) * 2009-08-24 2013-05-07 Micron Technology, Inc. Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
KR20120068772A (ko) * 2009-09-16 2012-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
CN105739209B (zh) * 2009-11-30 2022-05-27 株式会社半导体能源研究所 液晶显示设备、用于驱动该液晶显示设备的方法
KR102719739B1 (ko) 2009-12-04 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9669613B2 (en) 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
CN102714150B (zh) 2009-12-07 2016-01-20 Ipg微系统有限公司 激光剥离系统及方法
JP5926887B2 (ja) 2010-02-03 2016-05-25 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5542543B2 (ja) * 2010-06-28 2014-07-09 株式会社東芝 半導体装置の製造方法
KR101762823B1 (ko) * 2010-10-29 2017-07-31 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 제조 방법
US8486791B2 (en) 2011-01-19 2013-07-16 Macronix International Co., Ltd. Mufti-layer single crystal 3D stackable memory
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
CN102650051A (zh) * 2011-02-25 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
CN102650039A (zh) * 2011-02-28 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
CN102677007A (zh) * 2011-03-14 2012-09-19 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
FR2993095B1 (fr) * 2012-07-03 2014-08-08 Commissariat Energie Atomique Detachement d’une couche autoportee de silicium <100>
US9406551B2 (en) * 2012-09-27 2016-08-02 Infineon Technologies Austria Ag Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate
US9636782B2 (en) 2012-11-28 2017-05-02 International Business Machines Corporation Wafer debonding using mid-wavelength infrared radiation ablation
US20140144593A1 (en) * 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation
US9214351B2 (en) 2013-03-12 2015-12-15 Macronix International Co., Ltd. Memory architecture of thin film 3D array
TWI610374B (zh) 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
EP2884498A1 (en) 2013-11-29 2015-06-17 Canon Kabushiki Kaisha Structural body and x-ray talbot interferometer including the structural body
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US10439057B2 (en) 2014-09-09 2019-10-08 Intel Corporation Multi-gate high electron mobility transistors and methods of fabrication
JP6456228B2 (ja) * 2015-04-15 2019-01-23 株式会社ディスコ 薄板の分離方法
JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
EP3314633A4 (en) * 2015-06-29 2019-04-10 IPG Photonics Corporation METHOD BASED ON FIBERLASER FOR THE EQUIVALENT CRYSTALLIZATION OF AN AMORPHIC SILICON SUBSTRATE
US9870940B2 (en) 2015-08-03 2018-01-16 Samsung Electronics Co., Ltd. Methods of forming nanosheets on lattice mismatched substrates
US20170037534A1 (en) * 2015-08-07 2017-02-09 North Carolina State University Direct conversion of h-bn into c-bn and structures for a variety of applications
EP3252800A1 (en) * 2016-05-31 2017-12-06 Laser Systems & Solutions of Europe Deep junction electronic device and process for manufacturing thereof
US10240251B2 (en) 2016-06-28 2019-03-26 North Carolina State University Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
CN110800379B (zh) 2017-06-27 2022-01-18 佳能安内华股份有限公司 等离子体处理装置
CN110800377B (zh) 2017-06-27 2022-04-29 佳能安内华股份有限公司 等离子体处理装置
CN110800375B (zh) 2017-06-27 2021-12-28 佳能安内华股份有限公司 等离子体处理装置
PL3648551T3 (pl) 2017-06-27 2021-12-06 Canon Anelva Corporation Urządzenie do obróbki plazmowej
US10679886B2 (en) * 2017-11-17 2020-06-09 Jsr Corporation Workpiece treating method, semiconductor device, process for manufacturing the same, and temporary fixing composition for shear peeling
KR102439024B1 (ko) * 2018-06-26 2022-09-02 캐논 아네르바 가부시키가이샤 플라스마 처리 장치, 플라스마 처리 방법, 프로그램, 및 메모리 매체
CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
US11426818B2 (en) 2018-08-10 2022-08-30 The Research Foundation for the State University Additive manufacturing processes and additively manufactured products
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置
CN111106029B (zh) * 2019-12-31 2023-02-10 深圳市锐骏半导体股份有限公司 一种晶圆快速热处理机台的监控方法
JP7607678B2 (ja) * 2021-01-15 2024-12-27 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板製造方法
CN115346892A (zh) * 2021-05-14 2022-11-15 日扬科技股份有限公司 固体结构的加工装置及加工方法
JPWO2024190116A1 (enExample) * 2023-03-16 2024-09-19
CN116646822B (zh) * 2023-06-29 2025-10-24 安徽格恩半导体有限公司 一种具有费米面拓扑层的半导体激光元件

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390392A (en) * 1980-09-16 1983-06-28 Texas Instruments Incorporated Method for removal of minute physical damage to silicon wafers by employing laser annealing
WO1997045827A1 (en) * 1996-05-28 1997-12-04 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6322325B1 (en) * 1999-01-15 2001-11-27 Metropolitan Industries, Inc. Processor based pump control systems
US6171965B1 (en) * 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
JP4507395B2 (ja) * 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
KR100424593B1 (ko) * 2001-06-07 2004-03-27 엘지.필립스 엘시디 주식회사 실리콘 결정화방법
US7105048B2 (en) * 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP2003197523A (ja) * 2001-12-26 2003-07-11 Sharp Corp 結晶性半導体膜の製造方法および半導体装置
US7192479B2 (en) * 2002-04-17 2007-03-20 Sharp Laboratories Of America, Inc. Laser annealing mask and method for smoothing an annealed surface
JP2003347208A (ja) * 2002-05-27 2003-12-05 Sumitomo Heavy Ind Ltd アモルファス材料の結晶化方法
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
KR100618184B1 (ko) * 2003-03-31 2006-08-31 비오이 하이디스 테크놀로지 주식회사 결정화 방법
KR100492352B1 (ko) * 2003-06-12 2005-05-30 엘지.필립스 엘시디 주식회사 실리콘 결정화 방법
US7084045B2 (en) * 2003-12-12 2006-08-01 Seminconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100595455B1 (ko) * 2003-12-24 2006-06-30 엘지.필립스 엘시디 주식회사 레이저 마스크 및 이를 이용한 결정화방법
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP5110772B2 (ja) * 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
KR101016510B1 (ko) * 2004-06-30 2011-02-24 엘지디스플레이 주식회사 레이저 결정화방법 및 결정화 장치
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
JP5276792B2 (ja) * 2006-03-03 2013-08-28 株式会社半導体エネルギー研究所 半導体装置の作製方法

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