TW200943478A - Method for manufacturing SOI substrate and semiconductor device - Google Patents

Method for manufacturing SOI substrate and semiconductor device

Info

Publication number
TW200943478A
TW200943478A TW097141664A TW97141664A TW200943478A TW 200943478 A TW200943478 A TW 200943478A TW 097141664 A TW097141664 A TW 097141664A TW 97141664 A TW97141664 A TW 97141664A TW 200943478 A TW200943478 A TW 200943478A
Authority
TW
Taiwan
Prior art keywords
substrate
soi substrate
single crystal
crystal semiconductor
semiconductor layer
Prior art date
Application number
TW097141664A
Other languages
English (en)
Chinese (zh)
Inventor
Akihisa Shimomura
Junpei Momo
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200943478A publication Critical patent/TW200943478A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW097141664A 2007-11-01 2008-10-29 Method for manufacturing SOI substrate and semiconductor device TW200943478A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007285180 2007-11-01

Publications (1)

Publication Number Publication Date
TW200943478A true TW200943478A (en) 2009-10-16

Family

ID=40588499

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097141664A TW200943478A (en) 2007-11-01 2008-10-29 Method for manufacturing SOI substrate and semiconductor device

Country Status (5)

Country Link
US (1) US20090117707A1 (enExample)
JP (1) JP2009135448A (enExample)
KR (1) KR20090045123A (enExample)
CN (1) CN101425456A (enExample)
TW (1) TW200943478A (enExample)

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TWI453905B (zh) * 2010-06-28 2014-09-21 Toshiba Kk Manufacturing method of semiconductor device
TWI486476B (zh) * 2011-02-28 2015-06-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI490354B (zh) * 2011-03-14 2015-07-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI490358B (zh) * 2011-02-25 2015-07-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI506349B (zh) * 2009-11-30 2015-11-01 Semiconductor Energy Lab 液晶顯示裝置、液晶顯示裝置之驅動方法及包含該液晶顯示裝置之電子裝置
TWI684200B (zh) * 2015-06-02 2020-02-01 日商信越化學工業股份有限公司 具備氧化物單結晶薄膜之複合晶圓之製造方法
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置

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EP2009687B1 (en) * 2007-06-29 2016-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device
JP2010114431A (ja) 2008-10-10 2010-05-20 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
SG178765A1 (en) * 2009-01-21 2012-03-29 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
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KR102719739B1 (ko) * 2009-12-04 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI541093B (zh) 2009-12-07 2016-07-11 Ipg Microsystems Llc 雷射剝離系統及方法
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KR101762823B1 (ko) * 2010-10-29 2017-07-31 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 제조 방법
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US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
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US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
KR102204259B1 (ko) 2014-09-09 2021-01-18 인텔 코포레이션 멀티-게이트 고 전자 이동도 트랜지스터들 및 제조 방법들
JP6456228B2 (ja) * 2015-04-15 2019-01-23 株式会社ディスコ 薄板の分離方法
KR102509883B1 (ko) * 2015-06-29 2023-03-13 아이피지 포토닉스 코포레이션 비정질 실리콘 기재의 균일한 결정화를 위한 섬유 레이저-기반 시스템
US9870940B2 (en) 2015-08-03 2018-01-16 Samsung Electronics Co., Ltd. Methods of forming nanosheets on lattice mismatched substrates
CN108473311A (zh) * 2015-08-07 2018-08-31 北卡罗莱纳州立大学 Q-碳和q-bn的合成和处理，和由碳到金刚石的直接转化，bn及c-bn
EP3252800A1 (en) * 2016-05-31 2017-12-06 Laser Systems & Solutions of Europe Deep junction electronic device and process for manufacturing thereof
US10240251B2 (en) 2016-06-28 2019-03-26 North Carolina State University Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
KR102421625B1 (ko) 2017-06-27 2022-07-19 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
KR20220031132A (ko) 2017-06-27 2022-03-11 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
JP6457707B1 (ja) 2017-06-27 2019-01-23 キヤノンアネルバ株式会社 プラズマ処理装置
CN114666965B (zh) 2017-06-27 2025-08-01 佳能安内华股份有限公司 等离子体处理装置
US10679886B2 (en) * 2017-11-17 2020-06-09 Jsr Corporation Workpiece treating method, semiconductor device, process for manufacturing the same, and temporary fixing composition for shear peeling
JP6688440B1 (ja) * 2018-06-26 2020-04-28 キヤノンアネルバ株式会社 プラズマ処理装置、プラズマ処理方法、プログラムおよびメモリ媒体
CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
CN111106029B (zh) * 2019-12-31 2023-02-10 深圳市锐骏半导体股份有限公司 一种晶圆快速热处理机台的监控方法
CN116802770A (zh) * 2021-01-15 2023-09-22 东京毅力科创株式会社 基板处理装置、基板处理方法以及基板制造方法
CN115346892A (zh) * 2021-05-14 2022-11-15 日扬科技股份有限公司 固体结构的加工装置及加工方法
CN120753017A (zh) * 2023-03-16 2025-10-03 株式会社日本显示器 半导体装置及其制造方法
CN116646822B (zh) * 2023-06-29 2025-10-24 安徽格恩半导体有限公司 一种具有费米面拓扑层的半导体激光元件

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Cited By (10)

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TWI506349B (zh) * 2009-11-30 2015-11-01 Semiconductor Energy Lab 液晶顯示裝置、液晶顯示裝置之驅動方法及包含該液晶顯示裝置之電子裝置
US10847116B2 (en) 2009-11-30 2020-11-24 Semiconductor Energy Laboratory Co., Ltd. Reducing pixel refresh rate for still images using oxide transistors
US11282477B2 (en) 2009-11-30 2022-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
US11636825B2 (en) 2009-11-30 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
TWI453905B (zh) * 2010-06-28 2014-09-21 Toshiba Kk Manufacturing method of semiconductor device
TWI490358B (zh) * 2011-02-25 2015-07-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI486476B (zh) * 2011-02-28 2015-06-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI490354B (zh) * 2011-03-14 2015-07-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI684200B (zh) * 2015-06-02 2020-02-01 日商信越化學工業股份有限公司 具備氧化物單結晶薄膜之複合晶圓之製造方法
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置

Also Published As

Publication number Publication date
KR20090045123A (ko) 2009-05-07
CN101425456A (zh) 2009-05-06
US20090117707A1 (en) 2009-05-07
JP2009135448A (ja) 2009-06-18

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