TWI486476B - 殼體及其製造方法 - Google Patents
殼體及其製造方法 Download PDFInfo
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- TWI486476B TWI486476B TW100106808A TW100106808A TWI486476B TW I486476 B TWI486476 B TW I486476B TW 100106808 A TW100106808 A TW 100106808A TW 100106808 A TW100106808 A TW 100106808A TW I486476 B TWI486476 B TW I486476B
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- aluminum
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- aluminum alloy
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- 238000000034 method Methods 0.000 title claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 151
- 229910052782 aluminium Inorganic materials 0.000 claims description 149
- 229910000838 Al alloy Inorganic materials 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 50
- 238000005260 corrosion Methods 0.000 claims description 43
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 150000002500 ions Chemical class 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 20
- 229910021645 metal ion Inorganic materials 0.000 claims description 19
- 229910052786 argon Inorganic materials 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000011159 matrix material Substances 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 claims description 5
- 239000010953 base metal Substances 0.000 claims description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 229910052684 Cerium Inorganic materials 0.000 description 8
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- -1 cerium ions Chemical class 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000006056 electrooxidation reaction Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910018514 Al—O—N Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Description
本發明係關於一種殼體及其製造方法，特別涉及一種鋁或鋁合金的殼體及其製造方法。
鋁或鋁合金目前被廣泛應用於航空、航天、汽車及微電子等工業領域。但鋁或鋁合金的標準電極電位很低，耐腐蝕差，暴露於自然環境中會引起表面快速腐蝕。
提高鋁或鋁合金防腐蝕性的方法通常係在其表面形成保護性的塗層。傳統的陽極氧化、電沉積、化學轉化膜技術及電鍍等鋁或鋁合金的表面處理方法存在生產工藝複雜、效率低、環境污染嚴重等缺點。
真空鍍膜(PVD)為一清潔的成膜技術。然而，由於鋁或鋁合金的標準電極電位很低，且PVD塗層本身不可避免的會存在微小的孔隙，因此形成於鋁或鋁合金表面的PVD塗層容易發生電化學腐蝕，導致該PVD塗層的防腐蝕性能降低，對鋁或鋁合金的防腐蝕能力的提高有限。
鑒於以上情況，提供一種具有較好的耐腐蝕性的鋁或鋁合金殼體。
另外，還提供一種上述鋁或鋁合金殼體的製造方法。
一種殼體，包括鋁或鋁合金基體，該殼體還包括依次形成於該鋁或鋁合金基體上的鋁膜層和防腐蝕膜層，該防腐蝕膜層為氮氧化鋁梯度膜，其摻雜有鑭金屬離子，所述氮氧化鋁梯度膜層中N和O的原子百分含量由靠近鋁或鋁合金基體向遠離鋁或鋁合金基體的方向呈梯度增加，所述鑭金屬離子的摻雜方式為離子注入，所述鑭離子注入劑量在1×1016ions/cm2到1×1018ions/cm2之間。
一種殼體的製造方法，其包括如下步驟：提供鋁或鋁合金基體；於該鋁或鋁合金基體的表面磁控濺射鋁膜層；於鋁膜層上磁控濺射氮氧化鋁梯度膜，所述氮氧化鋁梯度膜中N和O的原子百分含量由靠近鋁或鋁合金基體向遠離鋁或鋁合金基體的方向呈梯度增加；於該氮氧化鋁梯度膜注入鑭金屬離子，形成防腐蝕膜層，所述鑭離子注入劑量在1×1016ions/cm2到1×1018ions/cm2之間。
本發明所述殼體的製造方法，在鋁或鋁合金基體上依次形成鋁膜層和防腐蝕膜層，該防腐蝕膜層為藉由離子注入的方式摻雜鑭金屬離子的氮氧化鋁梯度膜，鋁膜層和防腐蝕膜層的複合膜層可顯著提高所述殼體的耐腐蝕性，且該殼體的製造工藝簡單、幾乎無環境污染。
10‧‧‧殼體
11‧‧‧鋁或鋁合金基體
13‧‧‧鋁膜層
15‧‧‧防腐蝕膜層
100‧‧‧鍍膜機
20‧‧‧鍍膜室
30‧‧‧真空泵
21‧‧‧軌跡
22‧‧‧鋁靶
圖1係本發明較佳實施方式殼體的剖視示意圖。
圖2係圖1殼體的製作過程中所用鍍膜機的俯視示意圖。
為了使本發明的目的、技術方案及優點更加清楚明白，以下結合附圖與實施例對本發明進行進一步詳細說明。
請參閱圖1，本發明一較佳實施例的殼體10包括鋁或鋁合金基體11、及依次形成於該鋁或鋁合金基體11表面的鋁膜層13和防腐蝕膜層15。
該防腐蝕膜層15為氮氧化鋁梯度膜，其摻雜有鑭金屬離子，所述鑭金屬離子的摻雜方式為離子注入。
所述氮氧化鋁梯度膜中N和O的原子百分含量由靠近鋁或鋁合金基體11向遠離鋁或鋁合金基體11的方向呈梯度增加。
所述防腐蝕膜層15的厚度為0.5~2.0μm。
所述鋁膜層13的形成用以增強所述防腐蝕膜層15與鋁或鋁合金基體11之間的結合力。所述鋁膜層13的厚度為100~300nm。
所述殼體10的製造方法主要包括如下步驟：提供鋁或鋁合金基體11，該鋁或鋁合金基體11可以藉由沖壓成型得到，其具有待製得的殼體10的結構。
將所述鋁或鋁合金基體11放入盛裝有乙醇或丙酮溶液的超聲波清洗器中進行清洗，以除去鋁或鋁合金基體11表面的雜質和油污。清洗完畢後烘乾備用。
對經上述處理後的鋁或鋁合金基體11的表面進行氬氣電漿清洗，進一步去除鋁或鋁合金基體11表面的油污，以改善鋁或鋁合金基
體11表面與後續塗層的結合力。
請參閱圖2，提供一鍍膜機100，該鍍膜機100包括一鍍膜室20及連接於鍍膜室20的一真空泵30，真空泵30用以對鍍膜室20抽真空。該鍍膜室20內設有轉架(未圖示)、二鋁靶22，轉架帶動鋁或鋁合金基體11沿圓形的軌跡21公轉，且鋁或鋁合金基體11在沿軌跡21公轉時亦自轉。
該電漿清洗的具體操作及工藝參數可為：對該鍍膜室20進行抽真空處理至本底真空度為8.0×10-3Pa，以300~500sccm(標準狀態毫升/分鐘)的流量向鍍膜室20內通入純度為99.999%的氬氣(工作氣體)，於鋁或鋁合金基體11上施加-300~-800V的偏壓，在所述鍍膜室20中形成高頻電壓，使所述氬氣產生氬氣電漿對鋁或鋁合金基體11的表面進行物理轟擊，而達到對鋁或鋁合金基體11表面清洗的目的。所述氬氣電漿清洗的時間為3~10min。
採用磁控濺射的方式在鋁或鋁合金基體11表面依次形成鋁膜層13及防腐蝕膜層15。形成該鋁膜層13及防腐蝕膜層15的具體操作方法及工藝參數為：在所述電漿清洗完成後，通入高純氬氣(99.999%)100~300sccm，開啟靶材22的電源，該靶材22為鋁靶，設置鋁靶功率為2~8kw，調節鋁或鋁合金基體11的偏壓為-300~-500V，在鋁或鋁合金基體11表面沉積鋁膜層13，沉積5~10分鐘。
形成所述鋁膜層13後，以氬氣為工作氣體，其流量為100~300sccm，以氮氣和氧氣為反應氣體，設置氮氣和氧氣的初始流量分別為10~20sccm和10~20sccm，在鋁或鋁合金基體11上施加-150~-500V的偏壓，沉積所述防腐蝕膜層15。該防腐蝕膜層15
為氮氧化鋁梯度膜，沉積所述防腐蝕膜層15時，每沉積10~15min將氮氣和氧氣的流量增大10~20sccm，使氮原子和氧原子在氮氧化鋁梯度膜中的原子百分含量由靠近鋁或鋁合金基體11至遠離鋁或鋁合金基體11的方向呈梯度增加。沉積該氮氧化鋁梯度膜的時間為30~90min。
所述氮氧化鋁梯度膜在其形成過程中可形成緻密的Al-O-N相，增強所述防腐蝕膜層15的緻密性，以提高所述殼體10的耐腐蝕性。
所述氮氧化鋁梯度膜的N和O的原子百分含量由靠近鋁或鋁合金基體11至遠離鋁或鋁合金基體11的方向呈梯度增加，可降低氮氧化鋁梯度膜與鋁膜層13或鋁或鋁合金基體11之間晶格不匹配的程度，有利於將濺射氮氧化鋁梯度膜的過程中產生的殘餘應力向鋁或鋁合金基體11方向傳遞；又因為在氮氧化鋁梯度膜和鋁或鋁合金基體11之間沉積了塑性較好的鋁膜層13，可改善防腐蝕膜層15與鋁或鋁合金基體11之間的介面錯配度，當氮氧化鋁梯度膜中的殘餘應力較大時，可以借助於該鋁膜層13以及鋁或鋁合金基體11的局部塑性變形實現殘餘應力的釋放，從而減少所述氮氧化鋁梯度膜內的殘餘應力，使殼體10不易發生應力腐蝕，以提高所述殼體10的耐腐蝕性。所述應力腐蝕係指在殘餘或/和外加應力及腐蝕介質的作用下，引起的金屬失效現象。
完成上述氮氧化鋁梯度膜的沉積後，於該氮氧化鋁梯度膜表面離子注入鑭離子，從而形成上述防腐蝕膜層15。所述的注入鑭離子的過程係：將鍍覆有所述鋁膜層13及氮氧化鋁梯度膜的鋁或鋁合金基體11置於強流金屬離子注入機(MEVVA)中，該離子注入機中採用鑭金屬靶材，該離子注入機首先將鑭金屬進行電離，使其產
生鑭金屬離子蒸氣，並經高壓電場加速使該鑭金屬離子蒸氣形成具有幾萬甚至幾百萬電子伏特能量的鑭離子束，射入氮氧化鋁梯度膜的表面，與氮氧化鋁梯度膜表層中及其表面的原子或分子發生的物理反應，於該氮氧化鋁梯度膜的表面沉積形成鑭金屬離子，製得所述防腐蝕膜層15。
本實施例中注入所述鑭離子的參數為：離子注入機的真空度為1×10-4Pa，離子源電壓為30~100kV，離子束流強度為0.1~5mA，控制鑭離子注入劑量在1×1016ions/cm2到1×1018ions/cm2之間。
所述鑭金屬離子與所述氮氧化鋁梯度膜中的原子為冶金結合，因此，該注入的鑭金屬離子不易脫落，且由於係在高能離子注入的條件下形成，該鑭金屬注入氮氧化鋁梯度膜中後形成為非晶態，由於非晶態結構具有各向同性、表面無晶界、無位錯、偏析，均相體系等特點，故，經離子注入鑭金屬離子後的氮氧化鋁梯度膜使殼體10在腐蝕性介質中不易形成腐蝕微電池，發生電化學腐蝕的可能極小，大大提高了殼體10的耐蝕性。
以下結合具體實施例對殼體10的製備方法及殼體10進行說明：
電漿清洗：氬氣流量為280sccm，鋁或鋁合金基體11的偏壓為-300V，電漿清洗的時間為9分鐘；濺鍍鋁膜層13：以鋁靶22為靶材，通入氬氣100sccm，開啟鋁靶22，設置鋁靶22功率為2kw，設置鋁或鋁合金基體11的偏壓為-500V，沉積5分鐘；濺鍍防腐蝕層15：形成氮氧化鋁梯度膜，以氬氣為工作氣體，其
流量為100sccm，以氮氣和氧氣為反應氣體，設置氮氣和氧氣的初始流量分別為10sccm和10sccm，在鋁或鋁合金基體11上施加-500V的偏壓；每沉積10min將氮氣和氧氣的流量增大10sccm，沉積時間控制為30min；對氮氧化鋁梯度膜注入鑭金屬離子，工藝參數為：設置真空度為1×10-4Pa，離子源電壓為30kV，離子束流強度為0.1mA，控制鑭離子注入劑量為1×1016ions/cm2。
電漿清洗：以鋁靶22為靶材，氬氣流量為230sccm，鋁或鋁合金基體11的偏壓為-480V，電漿清洗的時間為7分鐘；濺鍍鋁膜層13：通入氬氣200sccm，開啟鋁靶22，設置鋁靶22功率為5kw，設置鋁或鋁合金基體11的偏壓為-400V，沉積7分鐘；濺鍍防腐蝕層15：形成氮氧化鋁梯度膜，以氬氣為工作氣體，其流量為200sccm，以氮氣和氧氣為反應氣體，設置氮氣和氧氣的初始流量分別為15sccm和60sccm，在鋁或鋁合金基體11上施加-300V的偏壓；每沉積12min將氮氣和氧氣的流量增大15sccm，沉積時間控制為60min；對氮氧化鋁梯度膜注入鑭金屬離子，工藝參數為：設置真空度為1×10-4Pa，離子源電壓為60kV，離子束流強度為2mA，控制鑭離子注入劑量為1×1017ions/cm2。
電漿清洗：氬氣流量為160sccm，鋁或鋁合金基體11的偏壓為
-400V，電漿清洗的時間為6分鐘；濺鍍鋁膜層13：以鋁靶22為靶材，通入氬氣300sccm，開啟鋁靶22，設置鋁靶22的功率為8kw，設置鋁或鋁合金基體11的偏壓為-300V，沉積10分鐘；濺鍍防腐蝕層15：形成氮氧化鋁梯度膜，以氬氣為工作氣體，其流量為300sccm，以氮氣和氧氣為反應氣體，設置氮氣和氧氣的初始流量分別為20sccm和100sccm，在鋁或鋁合金基體11上施加-150V的偏壓；每沉積15min將氮氣和氧氣的流量增大20sccm，沉積時間控制為90min；對氮氧化鋁梯度膜注入鑭金屬離子，工藝參數為：設置真空度為1×10-4Pa，離子源電壓為100kV，離子束流強度為5mA，控制鑭離子注入劑量為1×1018ions/cm2。
本發明較佳實施方式的殼體10的製造方法，在鋁或鋁合金基體11上依次形成鋁膜層13及防腐蝕膜層15，該防腐蝕膜層15為氮氧化鋁梯度膜，其摻雜有鑭金屬離子。該鋁膜層13、防腐蝕膜層15組成的複合膜層顯著地提高了所述殼體10的耐腐蝕性，且該製造工藝簡單。
綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅為本發明之較佳實施方式，舉凡熟悉本案技藝之人士，於爰依本發明精神所作之等效修飾或變化，皆應涵蓋於以下之申請專利範圍內。
10‧‧‧殼體
11‧‧‧鋁或鋁合金基體
13‧‧‧鋁膜層
15‧‧‧防腐蝕膜層
Claims (8)
- 一種殼體，包括鋁或鋁合金基體，其改良在於：該殼體還包括依次形成於該鋁或鋁合金基體上的鋁膜層和防腐蝕膜層，該防腐蝕膜層為氮氧化鋁梯度膜，其摻雜有鑭金屬離子，所述氮氧化鋁梯度膜中N和O的原子百分含量由靠近鋁或鋁合金基體向遠離鋁或鋁合金基體的方向呈梯度增加，所述鑭金屬離子的摻雜方式為離子注入，所述鑭離子注入劑量在1×1016ions/cm2到1×1018ions/cm2之間。
- 如申請專利範圍第1項所述之殼體，其中所述防腐蝕膜層的厚度為0.5~2.0μm。
- 如申請專利範圍第1項所述之殼體，其中所述鋁膜層的厚度為100~300nm。
- 一種殼體的製造方法，其包括如下步驟：提供鋁或鋁合金基體；於該鋁或鋁合金基體的表面磁控濺射鋁膜層；於鋁膜層上磁控濺射氮氧化鋁梯度膜，所述氮氧化鋁梯度膜中N和O的原子百分含量由靠近鋁或鋁合金基體向遠離鋁或鋁合金基體的方向呈梯度增加；於該氮氧化鋁梯度膜注入鑭金屬離子，形成防腐蝕膜層，所述鑭離子注入劑量在1×1016ions/cm2到1×1018ions/cm2之間。
- 如申請專利範圍第4項所述之殼體的製造方法，磁控濺射所述氮氧化鋁梯度膜的工藝參數為：以氬氣為工作氣體，其流量為100~300sccm，以氮氣和氧氣為反應氣體，設置氮氣和氧氣的初始流量分別為10~20sccm和10~20sccm，在鋁或鋁合金基體上施加-150~-500V的偏壓；每沉積 10~15min將氮氣和氧氣的流量增大10~20sccm，沉積時間控制為30~90min。
- 如申請專利範圍第4項所述之殼體的製造方法，對氮氧化鋁梯度膜注入鑭金屬離子的工藝參數為：設置真空度為1×10-4Pa，離子源電壓為30~100kV，離子束流強度為0.1~5mA。
- 如申請專利範圍第4項所述之殼體的製造方法，其中沉積鋁膜層的工藝參數為：以鋁靶為靶材，設置真空度為8.0×10-3Pa，通入氬氣100~300sccm，開啟鋁靶，設置鋁靶功率為2~8kw，設置鋁或鋁合金基體的偏壓為-300~-500V，沉積5~10分鐘。
- 如申請專利範圍第4項所述之殼體的製造方法，其中所述殼體的製造方法還包括在沉積所述鋁膜層之前對鋁或鋁合金基體進行電漿清洗的步驟。
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| TW200707799A (en) * | 2005-04-21 | 2007-02-16 | Aonex Technologies Inc | Bonded intermediate substrate and method of making same |
| TW200741026A (en) * | 2006-03-31 | 2007-11-01 | Tokyo Electron Ltd | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition |
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| TW200741026A (en) * | 2006-03-31 | 2007-11-01 | Tokyo Electron Ltd | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition |
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