IN2014MN01027A - - Google Patents

Info

Publication number
IN2014MN01027A
IN2014MN01027A IN1027MUN2014A IN2014MN01027A IN 2014MN01027 A IN2014MN01027 A IN 2014MN01027A IN 1027MUN2014 A IN1027MUN2014 A IN 1027MUN2014A IN 2014MN01027 A IN2014MN01027 A IN 2014MN01027A
Authority
IN
India
Prior art keywords
substrate layer
layer
wafer
sheet
circuit
Prior art date
Application number
Other languages
English (en)
Inventor
Chengjie Zuo
Changhan Yun
Sang June Park
Chi Shun Lo
Mario F Velez
Jonghae Kim
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of IN2014MN01027A publication Critical patent/IN2014MN01027A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Micromachines (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
IN1027MUN2014 2011-11-16 2012-11-16 IN2014MN01027A (enExample)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161560471P 2011-11-16 2011-11-16
US13/356,717 US9496255B2 (en) 2011-11-16 2012-01-24 Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
PCT/US2012/065644 WO2013075007A1 (en) 2011-11-16 2012-11-16 Stacked chipset having an insulating layer and a secondary layer and method of forming same

Publications (1)

Publication Number Publication Date
IN2014MN01027A true IN2014MN01027A (enExample) 2015-05-01

Family

ID=48280458

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1027MUN2014 IN2014MN01027A (enExample) 2011-11-16 2012-11-16

Country Status (7)

Country Link
US (1) US9496255B2 (enExample)
EP (1) EP2780942A1 (enExample)
JP (2) JP5937225B2 (enExample)
KR (2) KR20140100526A (enExample)
CN (1) CN104054175B (enExample)
IN (1) IN2014MN01027A (enExample)
WO (1) WO2013075007A1 (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104058363B (zh) * 2013-03-22 2016-01-20 上海丽恒光微电子科技有限公司 基于mems透射光阀的显示装置及其形成方法
US9418985B2 (en) 2013-07-16 2016-08-16 Qualcomm Incorporated Complete system-on-chip (SOC) using monolithic three dimensional (3D) integrated circuit (IC) (3DIC) technology
US9032353B2 (en) 2013-10-10 2015-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for three-dimensional layout design of integrated circuit elements in stacked CMOS
US9257407B2 (en) * 2013-10-28 2016-02-09 Qualcomm Incorporated Heterogeneous channel material integration into wafer
US9443758B2 (en) * 2013-12-11 2016-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Connecting techniques for stacked CMOS devices
KR102294812B1 (ko) 2014-01-23 2021-08-31 글로벌웨이퍼스 씨오., 엘티디. 고 비저항 soi 웨이퍼 및 그 제조 방법
US9786613B2 (en) * 2014-08-07 2017-10-10 Qualcomm Incorporated EMI shield for high frequency layer transferred devices
US20160043108A1 (en) * 2014-08-07 2016-02-11 Silanna Semiconductor U.S.A., Inc. Semiconductor Structure with Multiple Active Layers in an SOI Wafer
US9899499B2 (en) 2014-09-04 2018-02-20 Sunedison Semiconductor Limited (Uen201334164H) High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
WO2016081367A1 (en) 2014-11-18 2016-05-26 Sunedison Semiconductor Limited HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION
US10381260B2 (en) 2014-11-18 2019-08-13 GlobalWafers Co., Inc. Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers
WO2016081363A1 (en) * 2014-11-18 2016-05-26 Sunedison Semiconductor Limited A system-on-chip on a semiconductor-on-insulator wafer and a method of manufacturing
EP3221885B1 (en) 2014-11-18 2019-10-23 GlobalWafers Co., Ltd. High resistivity semiconductor-on-insulator wafer and a method of manufacturing
EP4120320A1 (en) 2015-03-03 2023-01-18 GlobalWafers Co., Ltd. Charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
WO2016149113A1 (en) 2015-03-17 2016-09-22 Sunedison Semiconductor Limited Thermally stable charge trapping layer for use in manufacture of semiconductor-on-insulator structures
US9881832B2 (en) 2015-03-17 2018-01-30 Sunedison Semiconductor Limited (Uen201334164H) Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof
US10332782B2 (en) 2015-06-01 2019-06-25 Globalwafers Co., Ltd. Method of manufacturing silicon germanium-on-insulator
US10304722B2 (en) 2015-06-01 2019-05-28 Globalwafers Co., Ltd. Method of manufacturing semiconductor-on-insulator
US20160379943A1 (en) * 2015-06-25 2016-12-29 Skyworks Solutions, Inc. Method and apparatus for high performance passive-active circuit integration
US20170033135A1 (en) * 2015-07-28 2017-02-02 Skyworks Solutions, Inc. Integrated passive device on soi substrate
US9768109B2 (en) * 2015-09-22 2017-09-19 Qualcomm Incorporated Integrated circuits (ICS) on a glass substrate
JP6585978B2 (ja) 2015-09-24 2019-10-02 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
CN108780776B (zh) 2015-11-20 2023-09-29 环球晶圆股份有限公司 使半导体表面平整的制造方法
US10256863B2 (en) * 2016-01-11 2019-04-09 Qualcomm Incorporated Monolithic integration of antenna switch and diplexer
US10468294B2 (en) 2016-02-19 2019-11-05 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface
US9831115B2 (en) 2016-02-19 2017-11-28 Sunedison Semiconductor Limited (Uen201334164H) Process flow for manufacturing semiconductor on insulator structures in parallel
WO2017142849A1 (en) 2016-02-19 2017-08-24 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a buried high resistivity layer
US10593748B2 (en) 2016-03-07 2020-03-17 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof
US11114332B2 (en) 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
US11848227B2 (en) 2016-03-07 2023-12-19 Globalwafers Co., Ltd. Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
WO2017155806A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
CN111201341B (zh) 2016-06-08 2023-04-04 环球晶圆股份有限公司 具有经改进的机械强度的高电阻率单晶硅锭及晶片
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
US20180068886A1 (en) * 2016-09-02 2018-03-08 Qualcomm Incorporated Porous semiconductor layer transfer for an integrated circuit structure
US9812580B1 (en) * 2016-09-06 2017-11-07 Qualcomm Incorporated Deep trench active device with backside body contact
JP6831911B2 (ja) 2016-10-26 2021-02-17 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板
JP6801105B2 (ja) 2016-12-05 2020-12-16 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 高抵抗シリコンオンインシュレータ構造及びその製造方法
KR102306730B1 (ko) 2016-12-28 2021-09-30 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
JP6881066B2 (ja) * 2017-06-19 2021-06-02 大日本印刷株式会社 貫通電極基板および貫通電極基板の製造方法
CN117038572A (zh) 2017-07-14 2023-11-10 太阳能爱迪生半导体有限公司 绝缘体上半导体结构的制造方法
EP3785293B1 (en) 2018-04-27 2023-06-07 GlobalWafers Co., Ltd. Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate
JP2019212729A (ja) * 2018-06-04 2019-12-12 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
KR102463727B1 (ko) 2018-06-08 2022-11-07 글로벌웨이퍼스 씨오., 엘티디. 얇은 실리콘 층의 전사 방법
EP3675168A1 (en) * 2018-12-24 2020-07-01 IMEC vzw 3d power semiconductor device and system
FR3091004B1 (fr) * 2018-12-24 2020-12-04 Soitec Silicon On Insulator Structure de type semi-conducteur pour applications digitales et radiofréquences
JP2020141090A (ja) * 2019-03-01 2020-09-03 ソニーセミコンダクタソリューションズ株式会社 容量素子、半導体素子基板及び電子機器
KR102804065B1 (ko) 2020-07-13 2025-05-09 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
CN114122134B (zh) * 2020-09-01 2023-12-22 苏州华太电子技术股份有限公司 一种射频ldmos集成器件
DE102022211198A1 (de) * 2022-10-21 2024-05-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines mikromechanischen Bauelements

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102523A (ja) 1999-09-28 2001-04-13 Sony Corp 薄膜デバイスおよびその製造方法
US6399997B1 (en) 2000-08-01 2002-06-04 Megic Corporation High performance system-on-chip using post passivation process and glass substrates
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP4244120B2 (ja) 2001-06-20 2009-03-25 株式会社半導体エネルギー研究所 発光装置及びその作製方法
AU2003255254A1 (en) 2002-08-08 2004-02-25 Glenn J. Leedy Vertical system integration
JP2004165269A (ja) 2002-11-11 2004-06-10 Canon Inc 積層形半導体装置
JP2004349513A (ja) 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP5354765B2 (ja) * 2004-08-20 2013-11-27 カミヤチョウ アイピー ホールディングス 三次元積層構造を持つ半導体装置の製造方法
US7179719B2 (en) 2004-09-28 2007-02-20 Sharp Laboratories Of America, Inc. System and method for hydrogen exfoliation
US20070207592A1 (en) 2006-03-03 2007-09-06 Lu James J Wafer bonding of damascene-patterned metal/adhesive redistribution layers
US7408798B2 (en) 2006-03-31 2008-08-05 International Business Machines Corporation 3-dimensional integrated circuit architecture, structure and method for fabrication thereof
US20080128901A1 (en) * 2006-11-30 2008-06-05 Peter Zurcher Micro-electro-mechanical systems device and integrated circuit device integrated in a three-dimensional semiconductor structure
US20080149832A1 (en) * 2006-12-20 2008-06-26 Miguel Zorn Scanning Probe Microscope, Nanomanipulator with Nanospool, Motor, nucleotide cassette and Gaming application
JP2009067098A (ja) 2007-09-10 2009-04-02 Harison Toshiba Lighting Corp 照明装置
JP2009267098A (ja) * 2008-04-25 2009-11-12 Denso Corp 半導体装置及びその製造方法
US7943428B2 (en) * 2008-12-24 2011-05-17 International Business Machines Corporation Bonded semiconductor substrate including a cooling mechanism
US7943423B2 (en) 2009-03-10 2011-05-17 Infineon Technologies Ag Reconfigured wafer alignment
US9406561B2 (en) 2009-04-20 2016-08-02 International Business Machines Corporation Three dimensional integrated circuit integration using dielectric bonding first and through via formation last
JP2011029609A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法およびｓｏｉ基板
US9076664B2 (en) * 2011-10-07 2015-07-07 Freescale Semiconductor, Inc. Stacked semiconductor die with continuous conductive vias

Also Published As

Publication number Publication date
EP2780942A1 (en) 2014-09-24
CN104054175A (zh) 2014-09-17
KR20140100526A (ko) 2014-08-14
JP6099794B2 (ja) 2017-03-22
US20130120951A1 (en) 2013-05-16
WO2013075007A1 (en) 2013-05-23
JP2015503228A (ja) 2015-01-29
JP5937225B2 (ja) 2016-06-22
CN104054175B (zh) 2018-03-06
KR20160044591A (ko) 2016-04-25
JP2016174170A (ja) 2016-09-29
KR101759689B1 (ko) 2017-07-19
US9496255B2 (en) 2016-11-15

Similar Documents

Publication Publication Date Title
IN2014MN01027A (enExample)
BR112012022488A2 (pt) laminação de dispositivo eletrocrômico em substratos de vidro
TW201614840A (en) Semiconductor device and method for fabricating the same
SG155152A1 (en) Integrated circuit system employing resistance altering techniques
SG10201805702QA (en) Method of forming an integrated circuit and related integrated circuit
MA34086B1 (fr) Revêtements antisolaires contenant une couche métallique discontinue
MY166803A (en) Methods for reducing the metal content in the device layer of soi structures and soi structures produced by such methods
EP2983044A3 (en) Halftone phase shift photomask blank and making method
TW201612964A (en) Semiconductor device and semiconductor device manufacturing method
GB2541146A (en) Method of manufacturing a germanium-on-insulator substrate
EP4012750A4 (en) SUBSTRATE FOR ELECTRONIC DEVICE AND PRODUCTION METHOD THEREOF
EP4326032A3 (en) Display apparatus and method of manufacturing the same
WO2013144738A3 (en) A deformable apparatus and method
TW201613037A (en) Substrate for power modules, substrate with heat sink for power modules and power module with heat sink
WO2012107263A3 (de) Optoelektronisches bauelement mit lichtdurchlässiger abdeckung und verfahren zu dessen herstellung
WO2010124059A3 (en) Crystalline thin-film photovoltaic structures and methods for forming the same
TW200703461A (en) Glass-based semiconductor on insulator structures and methods of making same
EP2921574A4 (en) SURFACE TREATMENT METHOD FOR A CRYSTALLINE SIC SUBSTRATE AND A CRYSTALLINE SIC SUBSTRATE
SG159484A1 (en) Method of manufacturing soi substrate
GB2526464A (en) Methods of forming buried microelectricomechanical structures coupled with device substrates and structures formed thereby
PH12018502573A1 (en) Light-dimming laminate and double glass
PH12013500171A1 (en) Wafer working tape
IN2014MN01952A (enExample)
WO2011005575A3 (en) Methods and apparatus for light harvesting in displays
GB2507693A (en) Saw filter having planar barrier layer and method of making