JP5937225B2 - 絶縁層および第２の層を有する積層されたチップセットおよびそれを形成する方法 - Google Patents

絶縁層および第２の層を有する積層されたチップセットおよびそれを形成する方法 Download PDF

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JP5937225B2
JP5937225B2 JP2014542512A JP2014542512A JP5937225B2 JP 5937225 B2 JP5937225 B2 JP 5937225B2 JP 2014542512 A JP2014542512 A JP 2014542512A JP 2014542512 A JP2014542512 A JP 2014542512A JP 5937225 B2 JP5937225 B2 JP 5937225B2
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circuit
layer
insulating layer
chipset
soi
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JP2015503228A (ja
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チェンジエ・ズオ
チャンハン・ユン
サン−ジュネ・パク
チ・シュン・ロ
マリオ・エフ・ヴェレス
ジョンヘ・キム
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Micromachines (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Laminated Bodies (AREA)
JP2014542512A 2011-11-16 2012-11-16 絶縁層および第２の層を有する積層されたチップセットおよびそれを形成する方法 Active JP5937225B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161560471P 2011-11-16 2011-11-16
US61/560,471 2011-11-16
US13/356,717 2012-01-24
US13/356,717 US9496255B2 (en) 2011-11-16 2012-01-24 Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
PCT/US2012/065644 WO2013075007A1 (en) 2011-11-16 2012-11-16 Stacked chipset having an insulating layer and a secondary layer and method of forming same

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JP5937225B2 true JP5937225B2 (ja) 2016-06-22

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JP2016095168A Expired - Fee Related JP6099794B2 (ja) 2011-11-16 2016-05-11 絶縁層および第２の層を有する積層されたチップセットおよびそれを形成する方法

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US (1) US9496255B2 (enExample)
EP (1) EP2780942A1 (enExample)
JP (2) JP5937225B2 (enExample)
KR (2) KR20140100526A (enExample)
CN (1) CN104054175B (enExample)
IN (1) IN2014MN01027A (enExample)
WO (1) WO2013075007A1 (enExample)

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KR102306730B1 (ko) 2016-12-28 2021-09-30 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
JP6881066B2 (ja) * 2017-06-19 2021-06-02 大日本印刷株式会社 貫通電極基板および貫通電極基板の製造方法
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EP2780942A1 (en) 2014-09-24
CN104054175A (zh) 2014-09-17
KR20140100526A (ko) 2014-08-14
JP6099794B2 (ja) 2017-03-22
US20130120951A1 (en) 2013-05-16
WO2013075007A1 (en) 2013-05-23
JP2015503228A (ja) 2015-01-29
IN2014MN01027A (enExample) 2015-05-01
CN104054175B (zh) 2018-03-06
KR20160044591A (ko) 2016-04-25
JP2016174170A (ja) 2016-09-29
KR101759689B1 (ko) 2017-07-19
US9496255B2 (en) 2016-11-15

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