JP6585978B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6585978B2 JP6585978B2 JP2015187014A JP2015187014A JP6585978B2 JP 6585978 B2 JP6585978 B2 JP 6585978B2 JP 2015187014 A JP2015187014 A JP 2015187014A JP 2015187014 A JP2015187014 A JP 2015187014A JP 6585978 B2 JP6585978 B2 JP 6585978B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- region
- semiconductor
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 406
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000012212 insulator Substances 0.000 claims description 90
- 239000000758 substrate Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14659—Direct radiation imagers structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
図1は、本発明の実施形態に係る半導体装置100の構成を示す断面図である。半導体装置100は、n型半導体で構成される第1の半導体層10、第1の絶縁体層20、n型半導体で構成される中間半導体層30、第2の絶縁体層40およびp型半導体で構成される第2の半導体層50を、この順序で積層したDouble−SOI(Double-Silicon On Insulator)基板に形成された、X線センサを構成するフォトダイオード11および周辺回路を構成する回路素子としてのトランジスタ51を含んで構成されている。
なお、本実施形態では、中間半導体層30が、フォトダイオード11の形成領域上(すなわち、上記した第1の半導体層10の第2の領域上)にも延在している形態を例示したが、中間半導体層30は、少なくとも第1の半導体層10に形成されたトランジスタ51を含む回路素子の下(上記した第1の半導体層10の第1の領域上)に延在していれば、第1の半導体層10に印加された高電圧が回路素子の動作に与える影響を抑制する効果を得ることができるので、中間半導体層30の、フォトダイオード11の形成領域上(第1の半導体層10の第2の領域上)に延在している部分を除去してもよい。
図6は、本発明の第2の実施形態に係る半導体装置101の構成を示す断面図である。図7は、半導体装置101の中間半導体層30Aの内部の状態を示す断面図である。
図9Aは、本発明の第3の実施形態に係る半導体装置102の主要部を示す平面図、図9Bは、図9Aにおける9B−9B線に沿った断面図、図9Cは、図9Aにおける9C−9C線に沿った断面図、図9Dは、図9Aにおける9D−9D線に沿った断面図である。
11 フォトダイオード
12 アノード
13 カソード
14 裏面電極
20 第1の絶縁体層
30、30A、30B 中間半導体層
31 コンタクト領域
40 第2の絶縁体層
50 第2の半導体層
51 トランジスタ
71 コンタクト電極
74 アノード電極
75 カソード電極
100、101、102 半導体装置
Claims (8)
- 第1の領域および前記第1の領域に隣接する第2の領域を有するn型の導電型を有する第1の半導体層と、
前記第1の半導体層の上に設けられた第1の絶縁体層と、
前記第1の半導体層の前記第1の領域上であり且つ前記第1の絶縁体層の上に設けられたn型の導電型を有する中間半導体層と、
前記中間半導体層の上に設けられた第2の絶縁体層と、
前記第1の半導体層の前記第1の領域上であり且つ前記第2の絶縁体層の上に設けられたp型の導電型を有する第2の半導体層と、
前記第1の半導体層の前記第2の領域に形成されたセンサと、
前記中間半導体層に接続されたコンタクト電極と、
前記第2の半導体層に形成された回路素子と、
を含む半導体装置。 - 第1の領域および前記第1の領域に隣接する第2の領域を有する第1の半導体層と、
前記第1の半導体層の上に設けられた第1の絶縁体層と、
前記第1の半導体層の前記第1の領域上であり且つ前記第1の絶縁体層の上に設けられたp型の導電型を有する中間半導体層と、
前記中間半導体層の上に設けられた第2の絶縁体層と、
前記第1の半導体層の前記第1の領域上であり且つ前記第2の絶縁体層の上に設けられた第2の半導体層と、
前記第1の半導体層の前記第2の領域に形成されたセンサと、
前記中間半導体層に接続されたコンタクト電極と、
前記第2の半導体層に形成された回路素子と、
を含み、
前記中間半導体層は、前記中間半導体層と前記第1の絶縁体層との界面付近に滞留する正電荷によって前記中間半導体層の前記第1の絶縁体層側に形成される第1の反転層と、前記中間半導体層と前記第2の絶縁体層との界面付近に滞留する正電荷によって前記中間半導体層の前記第2の絶縁体層側に形成され、前記第1の絶縁体層から前記第2の絶縁体層に向かう第1方向において前記第1の反転層と離隔した第2の反転層と、が形成されている
半導体装置。 - 前記中間半導体層の厚さは150nm以上である
請求項2に記載の半導体装置。 - 第1の領域および前記第1の領域に隣接する第2の領域を有する第1の半導体層と、
前記第1の半導体層の上に設けられた第1の絶縁体層と、
前記第1の半導体層の前記第1の領域上であり且つ前記第1の絶縁体層の上に設けられた中間半導体層と、
前記中間半導体層の上に設けられた第2の絶縁体層と、
前記第1の半導体層の前記第1の領域上であり且つ前記第2の絶縁体層の上に設けられた第2の半導体層と、
前記第1の半導体層の前記第2の領域に形成されたセンサと、
前記中間半導体層に形成されたp型の導電型を有する第1のコンタクト領域、および前記第1のコンタクト領域に電気的に接続されたn型の導電型を有する第2のコンタクト領域と、
前記第1のコンタクト領域および前記第2のコンタクト領域に接続されたコンタクト電極と、
前記第2の半導体層に形成された回路素子と、
を含む半導体装置。 - 前記第1のコンタクト領域および前記第2のコンタクト領域の表面を覆う接続電極を更に含む
請求項4に記載の半導体装置。 - 前記接続電極は、合金層を含んで構成される
請求項5に記載の半導体装置。 - 前記センサは、前記第1の半導体層の前記第1の絶縁体層側の面に設けられたp型半導体領域およびn型半導体領域と、前記第1の半導体層の前記第1の絶縁体層側の面とは反対側の面に設けられた裏面電極と、を有し、
電源の陽極が前記n型半導体領域および前記裏面電極に接続され、前記電源の陰極が前記p型半導体領域および前記コンタクト電極に接続される
請求項1から請求項6のいずれか1項に記載の半導体装置。 - 第1の領域および前記第1の領域に隣接する第2の領域を有する第1の半導体層、前記第1の半導体層の上に設けられた第1の絶縁体層、前記第1の半導体層の前記第1の領域上であり且つ前記第1の絶縁体層の上に設けられた中間半導体層、前記中間半導体層の上に設けられた第2の絶縁体層および前記第1の半導体層の前記第1の領域上であり且つ前記第2の絶縁体層の上に設けられた第2の半導体層を含む半導体基板を用意する工程と、
前記第2の半導体層に回路素子を形成する工程と、
前記第1の半導体層の前記第2の領域にセンサを形成する工程と、
前記中間半導体層にp型の導電型を有する第1のコンタクト領域およびn型の導電型を有する第2のコンタクト領域を形成する工程と、
前記第1のコンタクト領域および前記第2のコンタクト領域に接続されたコンタクト電極を形成する工程と、
を含む半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015187014A JP6585978B2 (ja) | 2015-09-24 | 2015-09-24 | 半導体装置および半導体装置の製造方法 |
US15/273,139 US9704912B2 (en) | 2015-09-24 | 2016-09-22 | Semiconductor device and semiconductor device manufacturing method |
CN201610849513.9A CN107026216B (zh) | 2015-09-24 | 2016-09-23 | 半导体装置以及半导体装置的制造方法 |
US15/616,979 US9985073B2 (en) | 2015-09-24 | 2017-06-08 | Semiconductor device and semiconductor device manufacturing method |
US15/961,919 US10312284B2 (en) | 2015-09-24 | 2018-04-25 | Semiconductor device and semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015187014A JP6585978B2 (ja) | 2015-09-24 | 2015-09-24 | 半導体装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017063098A JP2017063098A (ja) | 2017-03-30 |
JP6585978B2 true JP6585978B2 (ja) | 2019-10-02 |
Family
ID=58406827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015187014A Active JP6585978B2 (ja) | 2015-09-24 | 2015-09-24 | 半導体装置および半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US9704912B2 (ja) |
JP (1) | JP6585978B2 (ja) |
CN (1) | CN107026216B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6585978B2 (ja) * | 2015-09-24 | 2019-10-02 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
US10957707B2 (en) | 2019-04-23 | 2021-03-23 | International Business Machines Corporation | Vertical transistor based radiation dosimeter |
CN112310072A (zh) * | 2019-08-01 | 2021-02-02 | 广东美的白色家电技术创新中心有限公司 | 一种半导体芯片以及智能功率模块 |
CN112331673A (zh) * | 2019-08-05 | 2021-02-05 | 广东美的白色家电技术创新中心有限公司 | 一种半导体芯片以及智能功率模块 |
CN116153782A (zh) * | 2021-11-19 | 2023-05-23 | 无锡华润上华科技有限公司 | 半导体器件及其制造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03272176A (ja) * | 1990-03-22 | 1991-12-03 | Fujitsu Ltd | 半導体装置と基板と基板製造方法 |
JP3488730B2 (ja) * | 1993-11-05 | 2004-01-19 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JPH08222705A (ja) * | 1995-02-14 | 1996-08-30 | Hitachi Ltd | 相補型半導体装置 |
JP4282388B2 (ja) * | 2003-06-30 | 2009-06-17 | 株式会社東芝 | 半導体記憶装置 |
JP4389065B2 (ja) * | 2003-08-29 | 2009-12-24 | 財団法人生産技術研究奨励会 | Soi−mosfet |
JP5105060B2 (ja) * | 2007-11-16 | 2012-12-19 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
TWI328283B (en) * | 2008-05-16 | 2010-08-01 | Au Optronics Corp | Manufacturing method of thin film transistor array substrate and liquid crystal display panel |
US8026131B2 (en) * | 2008-12-23 | 2011-09-27 | International Business Machines Corporation | SOI radio frequency switch for reducing high frequency harmonics |
CN102792444B (zh) * | 2010-03-09 | 2015-10-14 | 大学共同利用机关法人高能加速器研究机构 | 半导体装置及半导体装置的制造方法 |
US8405036B2 (en) * | 2010-08-24 | 2013-03-26 | Carestream Health, Inc. | Digital radiography imager with buried interconnect layer in silicon-on-glass and method of fabricating same |
US9496255B2 (en) * | 2011-11-16 | 2016-11-15 | Qualcomm Incorporated | Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same |
CN102751332B (zh) * | 2012-07-20 | 2014-11-12 | 杭州士兰微电子股份有限公司 | 耗尽型功率半导体器件及其制造方法 |
JP6202515B2 (ja) * | 2013-01-11 | 2017-09-27 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP6271841B2 (ja) * | 2013-02-13 | 2018-01-31 | ラピスセミコンダクタ株式会社 | 半導体装置、半導体装置の製造方法および半導体装置を搭載したシステム |
WO2015015700A1 (ja) * | 2013-08-02 | 2015-02-05 | シャープ株式会社 | 放射線検出用半導体装置 |
CN104134703A (zh) * | 2014-08-08 | 2014-11-05 | 上海安微电子有限公司 | 一种低漏电低正向压降肖特基二极管结构及其制备方法 |
US9362444B1 (en) * | 2015-03-18 | 2016-06-07 | International Business Machines Corporation | Optoelectronics and CMOS integration on GOI substrate |
US9356163B1 (en) * | 2015-06-16 | 2016-05-31 | International Business Machines Corporation | Structure and method of integrating waveguides, photodetectors and logic devices |
JP6585978B2 (ja) * | 2015-09-24 | 2019-10-02 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
-
2015
- 2015-09-24 JP JP2015187014A patent/JP6585978B2/ja active Active
-
2016
- 2016-09-22 US US15/273,139 patent/US9704912B2/en active Active
- 2016-09-23 CN CN201610849513.9A patent/CN107026216B/zh active Active
-
2017
- 2017-06-08 US US15/616,979 patent/US9985073B2/en active Active
-
2018
- 2018-04-25 US US15/961,919 patent/US10312284B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170092685A1 (en) | 2017-03-30 |
CN107026216A (zh) | 2017-08-08 |
US10312284B2 (en) | 2019-06-04 |
US9985073B2 (en) | 2018-05-29 |
CN107026216B (zh) | 2020-09-22 |
JP2017063098A (ja) | 2017-03-30 |
US9704912B2 (en) | 2017-07-11 |
US20180240841A1 (en) | 2018-08-23 |
US20170271396A1 (en) | 2017-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6585978B2 (ja) | 半導体装置および半導体装置の製造方法 | |
KR100780967B1 (ko) | 고전압용 쇼트키 다이오드 구조체 | |
CN113196500B (zh) | 半导体装置及其制造方法 | |
TWI752041B (zh) | 半導體裝置、積體電路以及半導體裝置的製造方法 | |
JP5818238B2 (ja) | 半導体装置 | |
US10658418B2 (en) | Semiconductor device and method of manufacturing thereof | |
JP5397289B2 (ja) | 電界効果トランジスタ | |
JP5616720B2 (ja) | 半導体装置およびその製造方法 | |
JP2006237415A (ja) | 固体撮像装置 | |
JP6818931B1 (ja) | 真空チャネル電界効果トランジスタ、その製造方法及び半導体装置 | |
US20070212842A1 (en) | Manufacturing method of high-voltage MOS transistor | |
JP6202515B2 (ja) | 半導体装置の製造方法 | |
JP6161454B2 (ja) | 光電変換装置、その製造方法及びカメラ | |
JP6909057B2 (ja) | 炭化ケイ素半導体装置およびその製造方法 | |
JP6463407B2 (ja) | 半導体装置 | |
US8476619B2 (en) | Semiconductor device and method for fabricating the same | |
JP6243748B2 (ja) | 半導体素子及びその製造方法 | |
JP2014154862A (ja) | 半導体装置 | |
JP5926576B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
US20100032675A1 (en) | Component Comprising a Thin-Film Transistor and CMOS-Transistors and Methods for Production | |
JP2020096000A (ja) | 半導体素子および半導体素子の製造方法 | |
JPH04290440A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180705 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190308 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190520 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190813 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190906 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6585978 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |