JP2009135448A - 半導体基板の作製方法及び半導体装置の作製方法 - Google Patents

半導体基板の作製方法及び半導体装置の作製方法 Download PDF

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Publication number
JP2009135448A
JP2009135448A JP2008270681A JP2008270681A JP2009135448A JP 2009135448 A JP2009135448 A JP 2009135448A JP 2008270681 A JP2008270681 A JP 2008270681A JP 2008270681 A JP2008270681 A JP 2008270681A JP 2009135448 A JP2009135448 A JP 2009135448A
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Prior art keywords
single crystal
layer
crystal semiconductor
substrate
semiconductor substrate
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Japanese (ja)
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JP2009135448A5 (enExample
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Akihisa Shimomura
明久 下村
Junpei Momo
純平 桃
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P90/1916—
    • H10W10/181—
    • H10P14/3411—
    • H10P14/3816—

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008270681A 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法 Withdrawn JP2009135448A (ja)

Priority Applications (1)

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JP2008270681A JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

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JP2007285180 2007-11-01
JP2008270681A JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

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JP2009135448A true JP2009135448A (ja) 2009-06-18
JP2009135448A5 JP2009135448A5 (enExample) 2011-11-10

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Country Link
US (1) US20090117707A1 (enExample)
JP (1) JP2009135448A (enExample)
KR (1) KR20090045123A (enExample)
CN (1) CN101425456A (enExample)
TW (1) TW200943478A (enExample)

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US8476147B2 (en) 2010-02-03 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and manufacturing method thereof
KR20200105971A (ko) * 2009-12-04 2020-09-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20230003661A (ko) * 2009-09-16 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

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CN102650039A (zh) * 2011-02-28 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
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JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
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US9870940B2 (en) 2015-08-03 2018-01-16 Samsung Electronics Co., Ltd. Methods of forming nanosheets on lattice mismatched substrates
US20170037534A1 (en) * 2015-08-07 2017-02-09 North Carolina State University Direct conversion of h-bn into c-bn and structures for a variety of applications
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US10240251B2 (en) 2016-06-28 2019-03-26 North Carolina State University Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
CN110800379B (zh) 2017-06-27 2022-01-18 佳能安内华股份有限公司 等离子体处理装置
CN110800377B (zh) 2017-06-27 2022-04-29 佳能安内华股份有限公司 等离子体处理装置
CN110800375B (zh) 2017-06-27 2021-12-28 佳能安内华股份有限公司 等离子体处理装置
PL3648551T3 (pl) 2017-06-27 2021-12-06 Canon Anelva Corporation Urządzenie do obróbki plazmowej
US10679886B2 (en) * 2017-11-17 2020-06-09 Jsr Corporation Workpiece treating method, semiconductor device, process for manufacturing the same, and temporary fixing composition for shear peeling
KR102439024B1 (ko) * 2018-06-26 2022-09-02 캐논 아네르바 가부시키가이샤 플라스마 처리 장치, 플라스마 처리 방법, 프로그램, 및 메모리 매체
CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
US11426818B2 (en) 2018-08-10 2022-08-30 The Research Foundation for the State University Additive manufacturing processes and additively manufactured products
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置
CN111106029B (zh) * 2019-12-31 2023-02-10 深圳市锐骏半导体股份有限公司 一种晶圆快速热处理机台的监控方法
JP7607678B2 (ja) * 2021-01-15 2024-12-27 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板製造方法
CN115346892A (zh) * 2021-05-14 2022-11-15 日扬科技股份有限公司 固体结构的加工装置及加工方法
CN116646822B (zh) * 2023-06-29 2025-10-24 安徽格恩半导体有限公司 一种具有费米面拓扑层的半导体激光元件

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Cited By (8)

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KR20230003661A (ko) * 2009-09-16 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
KR102618171B1 (ko) * 2009-09-16 2023-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
US11997859B2 (en) 2009-09-16 2024-05-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
KR20200105971A (ko) * 2009-12-04 2020-09-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102333270B1 (ko) 2009-12-04 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US11728349B2 (en) 2009-12-04 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US8476147B2 (en) 2010-02-03 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and manufacturing method thereof
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20090045123A (ko) 2009-05-07
US20090117707A1 (en) 2009-05-07
TW200943478A (en) 2009-10-16
CN101425456A (zh) 2009-05-06

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