JP2009135448A - 半導体基板の作製方法及び半導体装置の作製方法 - Google Patents

半導体基板の作製方法及び半導体装置の作製方法 Download PDF

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Publication number
JP2009135448A
JP2009135448A JP2008270681A JP2008270681A JP2009135448A JP 2009135448 A JP2009135448 A JP 2009135448A JP 2008270681 A JP2008270681 A JP 2008270681A JP 2008270681 A JP2008270681 A JP 2008270681A JP 2009135448 A JP2009135448 A JP 2009135448A
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Prior art keywords
single crystal
layer
crystal semiconductor
substrate
semiconductor substrate
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JP2008270681A
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English (en)
Japanese (ja)
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JP2009135448A5 (enExample
Inventor
Akihisa Shimomura
明久 下村
Junpei Momo
純平 桃
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008270681A priority Critical patent/JP2009135448A/ja
Publication of JP2009135448A publication Critical patent/JP2009135448A/ja
Publication of JP2009135448A5 publication Critical patent/JP2009135448A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008270681A 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法 Withdrawn JP2009135448A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008270681A JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007285180 2007-11-01
JP2008270681A JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009135448A true JP2009135448A (ja) 2009-06-18
JP2009135448A5 JP2009135448A5 (enExample) 2011-11-10

Family

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Family Applications (1)

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JP2008270681A Withdrawn JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Country Status (5)

Country Link
US (1) US20090117707A1 (enExample)
JP (1) JP2009135448A (enExample)
KR (1) KR20090045123A (enExample)
CN (1) CN101425456A (enExample)
TW (1) TW200943478A (enExample)

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US8476147B2 (en) 2010-02-03 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and manufacturing method thereof
KR20200105971A (ko) * 2009-12-04 2020-09-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20230003661A (ko) * 2009-09-16 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

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EP2009687B1 (en) * 2007-06-29 2016-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device
JP2010114431A (ja) 2008-10-10 2010-05-20 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
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US8436362B2 (en) * 2009-08-24 2013-05-07 Micron Technology, Inc. Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
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JP5542543B2 (ja) * 2010-06-28 2014-07-09 株式会社東芝 半導体装置の製造方法
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CN106575669B (zh) * 2014-09-09 2020-12-08 英特尔公司 多栅极高电子迁移率晶体管及其制造方法
JP6456228B2 (ja) * 2015-04-15 2019-01-23 株式会社ディスコ 薄板の分離方法
JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
KR102509883B1 (ko) * 2015-06-29 2023-03-13 아이피지 포토닉스 코포레이션 비정질 실리콘 기재의 균일한 결정화를 위한 섬유 레이저-기반 시스템
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US20170037531A1 (en) * 2015-08-07 2017-02-09 North Carolina State University Direct conversion of carbon into diamond and structures for a variety of applications
EP3252800A1 (en) * 2016-05-31 2017-12-06 Laser Systems & Solutions of Europe Deep junction electronic device and process for manufacturing thereof
US10240251B2 (en) 2016-06-28 2019-03-26 North Carolina State University Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
CN114115609B (zh) 2016-11-25 2024-09-03 株式会社半导体能源研究所 显示装置及其工作方法
JP6457707B1 (ja) 2017-06-27 2019-01-23 キヤノンアネルバ株式会社 プラズマ処理装置
CN114666965B (zh) 2017-06-27 2025-08-01 佳能安内华股份有限公司 等离子体处理装置
WO2019003312A1 (ja) 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
TWI745813B (zh) 2017-06-27 2021-11-11 日商佳能安內華股份有限公司 電漿處理裝置
US10679886B2 (en) * 2017-11-17 2020-06-09 Jsr Corporation Workpiece treating method, semiconductor device, process for manufacturing the same, and temporary fixing composition for shear peeling
EP3817517B1 (en) 2018-06-26 2024-08-14 Canon Anelva Corporation Plasma treatment device, plasma treatment method, program, and memory medium
CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置
CN111106029B (zh) * 2019-12-31 2023-02-10 深圳市锐骏半导体股份有限公司 一种晶圆快速热处理机台的监控方法
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
CN115346892A (zh) * 2021-05-14 2022-11-15 日扬科技股份有限公司 固体结构的加工装置及加工方法
CN116646822B (zh) * 2023-06-29 2025-10-24 安徽格恩半导体有限公司 一种具有费米面拓扑层的半导体激光元件

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KR102618171B1 (ko) * 2009-09-16 2023-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
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KR20200105971A (ko) * 2009-12-04 2020-09-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102333270B1 (ko) 2009-12-04 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US11728349B2 (en) 2009-12-04 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US8476147B2 (en) 2010-02-03 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and manufacturing method thereof
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Also Published As

Publication number Publication date
CN101425456A (zh) 2009-05-06
KR20090045123A (ko) 2009-05-07
TW200943478A (en) 2009-10-16
US20090117707A1 (en) 2009-05-07

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