JP2009135448A - 半導体基板の作製方法及び半導体装置の作製方法 - Google Patents

半導体基板の作製方法及び半導体装置の作製方法 Download PDF

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Publication number
JP2009135448A
JP2009135448A JP2008270681A JP2008270681A JP2009135448A JP 2009135448 A JP2009135448 A JP 2009135448A JP 2008270681 A JP2008270681 A JP 2008270681A JP 2008270681 A JP2008270681 A JP 2008270681A JP 2009135448 A JP2009135448 A JP 2009135448A
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Prior art keywords
single crystal
layer
crystal semiconductor
substrate
semiconductor substrate
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JP2008270681A
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English (en)
Japanese (ja)
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JP2009135448A5 (enExample
Inventor
Akihisa Shimomura
明久 下村
Junpei Momo
純平 桃
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008270681A priority Critical patent/JP2009135448A/ja
Publication of JP2009135448A publication Critical patent/JP2009135448A/ja
Publication of JP2009135448A5 publication Critical patent/JP2009135448A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008270681A 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法 Withdrawn JP2009135448A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008270681A JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007285180 2007-11-01
JP2008270681A JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009135448A true JP2009135448A (ja) 2009-06-18
JP2009135448A5 JP2009135448A5 (enExample) 2011-11-10

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JP2008270681A Withdrawn JP2009135448A (ja) 2007-11-01 2008-10-21 半導体基板の作製方法及び半導体装置の作製方法

Country Status (5)

Country Link
US (1) US20090117707A1 (enExample)
JP (1) JP2009135448A (enExample)
KR (1) KR20090045123A (enExample)
CN (1) CN101425456A (enExample)
TW (1) TW200943478A (enExample)

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US8476147B2 (en) 2010-02-03 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and manufacturing method thereof
KR20200105971A (ko) * 2009-12-04 2020-09-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20230003661A (ko) * 2009-09-16 2023-01-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

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US20090004764A1 (en) * 2007-06-29 2009-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing semiconductor device
EP2009687B1 (en) * 2007-06-29 2016-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device
JP2010114431A (ja) 2008-10-10 2010-05-20 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
SG178765A1 (en) * 2009-01-21 2012-03-29 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
US8436362B2 (en) * 2009-08-24 2013-05-07 Micron Technology, Inc. Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
WO2011065230A1 (en) 2009-11-30 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
TWI541093B (zh) 2009-12-07 2016-07-11 Ipg Microsystems Llc 雷射剝離系統及方法
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JP5542543B2 (ja) 2010-06-28 2014-07-09 株式会社東芝 半導体装置の製造方法
KR101762823B1 (ko) * 2010-10-29 2017-07-31 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 제조 방법
US8486791B2 (en) 2011-01-19 2013-07-16 Macronix International Co., Ltd. Mufti-layer single crystal 3D stackable memory
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
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CN102650039A (zh) * 2011-02-28 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
CN102677007A (zh) * 2011-03-14 2012-09-19 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
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JP6456228B2 (ja) * 2015-04-15 2019-01-23 株式会社ディスコ 薄板の分離方法
JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
KR102509883B1 (ko) * 2015-06-29 2023-03-13 아이피지 포토닉스 코포레이션 비정질 실리콘 기재의 균일한 결정화를 위한 섬유 레이저-기반 시스템
US9870940B2 (en) 2015-08-03 2018-01-16 Samsung Electronics Co., Ltd. Methods of forming nanosheets on lattice mismatched substrates
CN108473311A (zh) * 2015-08-07 2018-08-31 北卡罗莱纳州立大学 Q-碳和q-bn的合成和处理，和由碳到金刚石的直接转化，bn及c-bn
EP3252800A1 (en) * 2016-05-31 2017-12-06 Laser Systems & Solutions of Europe Deep junction electronic device and process for manufacturing thereof
US10240251B2 (en) 2016-06-28 2019-03-26 North Carolina State University Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
KR102421625B1 (ko) 2017-06-27 2022-07-19 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
KR20220031132A (ko) 2017-06-27 2022-03-11 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
JP6457707B1 (ja) 2017-06-27 2019-01-23 キヤノンアネルバ株式会社 プラズマ処理装置
CN114666965B (zh) 2017-06-27 2025-08-01 佳能安内华股份有限公司 等离子体处理装置
US10679886B2 (en) * 2017-11-17 2020-06-09 Jsr Corporation Workpiece treating method, semiconductor device, process for manufacturing the same, and temporary fixing composition for shear peeling
JP6688440B1 (ja) * 2018-06-26 2020-04-28 キヤノンアネルバ株式会社 プラズマ処理装置、プラズマ処理方法、プログラムおよびメモリ媒体
CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置
CN111106029B (zh) * 2019-12-31 2023-02-10 深圳市锐骏半导体股份有限公司 一种晶圆快速热处理机台的监控方法
CN116802770A (zh) * 2021-01-15 2023-09-22 东京毅力科创株式会社 基板处理装置、基板处理方法以及基板制造方法
CN115346892A (zh) * 2021-05-14 2022-11-15 日扬科技股份有限公司 固体结构的加工装置及加工方法
CN116646822B (zh) * 2023-06-29 2025-10-24 安徽格恩半导体有限公司 一种具有费米面拓扑层的半导体激光元件

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KR102618171B1 (ko) * 2009-09-16 2023-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
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KR20200105971A (ko) * 2009-12-04 2020-09-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102333270B1 (ko) 2009-12-04 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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US8476147B2 (en) 2010-02-03 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and manufacturing method thereof
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20090045123A (ko) 2009-05-07
CN101425456A (zh) 2009-05-06
US20090117707A1 (en) 2009-05-07
TW200943478A (en) 2009-10-16

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