EP3314633A4 - Fiber laser-based system for uniform crystallization of amorphous silicon substrate - Google Patents

Fiber laser-based system for uniform crystallization of amorphous silicon substrate Download PDF

Info

Publication number
EP3314633A4
EP3314633A4 EP16818736.7A EP16818736A EP3314633A4 EP 3314633 A4 EP3314633 A4 EP 3314633A4 EP 16818736 A EP16818736 A EP 16818736A EP 3314633 A4 EP3314633 A4 EP 3314633A4
Authority
EP
European Patent Office
Prior art keywords
silicon substrate
amorphous silicon
based system
fiber laser
uniform crystallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16818736.7A
Other languages
German (de)
French (fr)
Other versions
EP3314633A1 (en
Inventor
Manuel LEONARDO
Michael Von Dadelszen
Yuri Erokhin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPG Photonics Corp
Original Assignee
IPG Photonics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IPG Photonics Corp filed Critical IPG Photonics Corp
Publication of EP3314633A1 publication Critical patent/EP3314633A1/en
Publication of EP3314633A4 publication Critical patent/EP3314633A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
EP16818736.7A 2015-06-29 2016-06-29 Fiber laser-based system for uniform crystallization of amorphous silicon substrate Pending EP3314633A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562186057P 2015-06-29 2015-06-29
US201662315310P 2016-03-30 2016-03-30
PCT/US2016/040222 WO2017004280A1 (en) 2015-06-29 2016-06-29 Fiber laser-based system for uniform crystallization of amorphous silicon substrate

Publications (2)

Publication Number Publication Date
EP3314633A1 EP3314633A1 (en) 2018-05-02
EP3314633A4 true EP3314633A4 (en) 2019-04-10

Family

ID=57609576

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16818736.7A Pending EP3314633A4 (en) 2015-06-29 2016-06-29 Fiber laser-based system for uniform crystallization of amorphous silicon substrate

Country Status (4)

Country Link
EP (1) EP3314633A4 (en)
KR (1) KR102509883B1 (en)
CN (1) CN107924827B (en)
WO (1) WO2017004280A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11673208B2 (en) * 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
WO2019028082A1 (en) * 2017-07-31 2019-02-07 Ipg Photonics Corporation Laser apparatus and method of processing thin films
EP3642384A4 (en) * 2017-07-31 2021-03-31 IPG Photonics Corporation Laser apparatus and method of processing thin films
US20200238441A1 (en) * 2017-10-13 2020-07-30 The Trustees Of Columbia University In The City Of New York Systems and methods for spot beam and line beam crystallization

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054443A1 (en) * 2005-09-02 2007-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20080210945A1 (en) * 2006-08-31 2008-09-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, and semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189329A1 (en) * 2003-09-02 2005-09-01 Somit Talwar Laser thermal processing with laser diode radiation
JP4567984B2 (en) * 2004-01-30 2010-10-27 株式会社 日立ディスプレイズ Flat panel display manufacturing equipment
CN101933201A (en) * 2007-08-01 2010-12-29 深度光子公司 Method and apparatus for pulsed harmonic ultraviolet lasers
JP5688203B2 (en) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor substrate
JP2009135448A (en) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor substrate, and method for manufacturing semiconductor device
KR101094294B1 (en) * 2009-11-17 2011-12-19 삼성모바일디스플레이주식회사 Method for manufacturing organic light emitting diode display
TWI545627B (en) * 2012-06-13 2016-08-11 Sumitomo Heavy Industries Semiconductor device manufacturing method and laser annealing device
JP5918118B2 (en) * 2012-12-18 2016-05-18 株式会社日本製鋼所 Method for manufacturing crystalline semiconductor film
US9343307B2 (en) * 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054443A1 (en) * 2005-09-02 2007-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20080210945A1 (en) * 2006-08-31 2008-09-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, and semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2017004280A1 *

Also Published As

Publication number Publication date
EP3314633A1 (en) 2018-05-02
KR102509883B1 (en) 2023-03-13
KR20180014439A (en) 2018-02-08
WO2017004280A1 (en) 2017-01-05
CN107924827B (en) 2022-07-01
CN107924827A (en) 2018-04-17

Similar Documents

Publication Publication Date Title
EP3271937A4 (en) Method for transfer of semiconductor devices
EP3164885A4 (en) Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser
EP3268379A4 (en) Crystalline form of nicotinamide riboside
EP3302448A4 (en) Substituted heterocyclyl derivatives as cdk inhibitors
EP3174891A4 (en) Crystalline form of nicotinamide riboside
EP3363044A4 (en) Substrate carrier system
EP3205034A4 (en) Facilitating installation of fiber optic networks
EP3136857A4 (en) Crystalline form of baricitinib
EP3143657A4 (en) Structurally controlled deposition of silicon onto nanowires
EP3379306A4 (en) Silicon optical circuit
EP3178817A4 (en) Amorphous form of tetracyclic compound
EP3457445A4 (en) Production method for optical semiconductor device
IL255907B (en) Five-mirror afocal wide field of view optical system
SG11201706122SA (en) Activation method for silicon substrates
EP3512477A4 (en) Ear splint to correct congenital ear deformities
EP3195431A4 (en) Crystal mount for laser application
IL249993B (en) Precision optical mount for optical devices
EP3199668A4 (en) Manufacturing method and manufacturing system for silicon single crystal
EP3390422A4 (en) Crystalline forms of lnt
EP3296299A4 (en) Crystals of azabicyclic compound
EP3394078A4 (en) Inhibitors of glucocorticoid receptor
EP3164128A4 (en) Amorphous form of eliglustat hemitartarate
EP3314633A4 (en) Fiber laser-based system for uniform crystallization of amorphous silicon substrate
EP3096721A4 (en) Devices configured to provide treatment at an abreu brain thermal tunnel
EP3107364A4 (en) Production management device for substrate production line

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20180123

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20190308

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/20 20060101AFI20190304BHEP

Ipc: H01L 21/268 20060101ALI20190304BHEP

Ipc: H01L 21/324 20060101ALI20190304BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20200923

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS