EP3314633A4 - Système à base de laser à fibre pour cristallisation uniforme d'un substrat en silicium amorphe - Google Patents

Système à base de laser à fibre pour cristallisation uniforme d'un substrat en silicium amorphe Download PDF

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Publication number
EP3314633A4
EP3314633A4 EP16818736.7A EP16818736A EP3314633A4 EP 3314633 A4 EP3314633 A4 EP 3314633A4 EP 16818736 A EP16818736 A EP 16818736A EP 3314633 A4 EP3314633 A4 EP 3314633A4
Authority
EP
European Patent Office
Prior art keywords
silicon substrate
amorphous silicon
based system
fiber laser
uniform crystallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP16818736.7A
Other languages
German (de)
English (en)
Other versions
EP3314633A1 (fr
Inventor
Manuel LEONARDO
Michael Von Dadelszen
Yuri Erokhin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPG Photonics Corp
Original Assignee
IPG Photonics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IPG Photonics Corp filed Critical IPG Photonics Corp
Publication of EP3314633A1 publication Critical patent/EP3314633A1/fr
Publication of EP3314633A4 publication Critical patent/EP3314633A4/fr
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
EP16818736.7A 2015-06-29 2016-06-29 Système à base de laser à fibre pour cristallisation uniforme d'un substrat en silicium amorphe Pending EP3314633A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562186057P 2015-06-29 2015-06-29
US201662315310P 2016-03-30 2016-03-30
PCT/US2016/040222 WO2017004280A1 (fr) 2015-06-29 2016-06-29 Système à base de laser à fibre pour cristallisation uniforme d'un substrat en silicium amorphe

Publications (2)

Publication Number Publication Date
EP3314633A1 EP3314633A1 (fr) 2018-05-02
EP3314633A4 true EP3314633A4 (fr) 2019-04-10

Family

ID=57609576

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16818736.7A Pending EP3314633A4 (fr) 2015-06-29 2016-06-29 Système à base de laser à fibre pour cristallisation uniforme d'un substrat en silicium amorphe

Country Status (4)

Country Link
EP (1) EP3314633A4 (fr)
KR (1) KR102509883B1 (fr)
CN (1) CN107924827B (fr)
WO (1) WO2017004280A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7222974B2 (ja) * 2017-07-31 2023-02-15 アイピージー フォトニクス コーポレーション 薄膜を処理するレーザ装置および方法
US11673208B2 (en) * 2017-07-31 2023-06-13 Ipg Photonics Corporation Fiber laser apparatus and method for processing workpiece
CN111065759B (zh) * 2017-07-31 2022-05-10 Ipg光子公司 激光装置和对薄膜进行加工的方法
CN111479650A (zh) * 2017-10-13 2020-07-31 纽约市哥伦比亚大学理事会 用于点束和线束结晶的系统和方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054443A1 (en) * 2005-09-02 2007-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20080210945A1 (en) * 2006-08-31 2008-09-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, and semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050189329A1 (en) * 2003-09-02 2005-09-01 Somit Talwar Laser thermal processing with laser diode radiation
JP4567984B2 (ja) * 2004-01-30 2010-10-27 株式会社 日立ディスプレイズ 平面表示装置の製造装置
EP2176929A4 (fr) * 2007-08-01 2011-08-31 Deep Photonics Corp Procédé et appareil pour lasers ultraviolets harmoniques à impulsions
JP2009135448A (ja) * 2007-11-01 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法及び半導体装置の作製方法
JP5688203B2 (ja) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 半導体基板の作製方法
KR101094294B1 (ko) * 2009-11-17 2011-12-19 삼성모바일디스플레이주식회사 유기 발광 표시 장치 제조 방법
TWI545627B (zh) * 2012-06-13 2016-08-11 Sumitomo Heavy Industries 半導體裝置的製造方法及雷射退火裝置
JP5918118B2 (ja) * 2012-12-18 2016-05-18 株式会社日本製鋼所 結晶半導体膜の製造方法
US9343307B2 (en) * 2013-12-24 2016-05-17 Ultratech, Inc. Laser spike annealing using fiber lasers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054443A1 (en) * 2005-09-02 2007-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20080210945A1 (en) * 2006-08-31 2008-09-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, manufacturing method thereof, and semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2017004280A1 *

Also Published As

Publication number Publication date
CN107924827A (zh) 2018-04-17
KR102509883B1 (ko) 2023-03-13
KR20180014439A (ko) 2018-02-08
CN107924827B (zh) 2022-07-01
WO2017004280A1 (fr) 2017-01-05
EP3314633A1 (fr) 2018-05-02

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