JP4567984B2 - 平面表示装置の製造装置 - Google Patents
平面表示装置の製造装置 Download PDFInfo
- Publication number
- JP4567984B2 JP4567984B2 JP2004022444A JP2004022444A JP4567984B2 JP 4567984 B2 JP4567984 B2 JP 4567984B2 JP 2004022444 A JP2004022444 A JP 2004022444A JP 2004022444 A JP2004022444 A JP 2004022444A JP 4567984 B2 JP4567984 B2 JP 4567984B2
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- Prior art keywords
- laser beam
- laser
- laser light
- intensity distribution
- optical axis
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 52
- 230000003287 optical effect Effects 0.000 claims description 186
- 238000009826 distribution Methods 0.000 claims description 135
- 238000007493 shaping process Methods 0.000 claims description 72
- 230000007246 mechanism Effects 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 26
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 35
- 239000010703 silicon Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 34
- 210000000554 iris Anatomy 0.000 description 32
- 239000013078 crystal Substances 0.000 description 31
- 239000010409 thin film Substances 0.000 description 31
- 238000001514 detection method Methods 0.000 description 27
- 230000008569 process Effects 0.000 description 22
- 238000012545 processing Methods 0.000 description 21
- 230000008859 change Effects 0.000 description 11
- 238000009827 uniform distribution Methods 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000005224 laser annealing Methods 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000009828 non-uniform distribution Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
Claims (5)
- 連続発振レーザ光を発振するレーザ発振器と、
前記発振されたレーザ光を、線状または矩形状に整形するレーザ光整形手段とを備え、
前記整形されたレーザ光を基板に照射する平面表示装置の製造装置であって、
前記レーザ発振器から発振され、前記レーザ光整形手段で整形される前の前記レーザ光の空間強度分布及びレーザ径を調整するレーザ光調整手段と、
前記空間強度分布及びレーザ径を調整された後であり、前記レーザ光整形手段に入射される前のレーザ光の空間強度分布及びレーザ径を測定する第一のレーザ光測定手段と、
を備え、
前記レーザ光の調整後であり、前記レーザ光整形手段に入射される前のレーザ光を前記第一のレーザ光測定手段が測定した結果に基づいて、前記レーザ光調整手段が前記レーザ光の空間強度分布及びレーザ径を調整し、当該調整したレーザ光を前記レーザ光整形手段に入射することを特徴とする平面表示装置の製造装置。 - 前記レーザ光調整手段は、二枚の凸レンズと、前記二枚の凸レンズの間に配置される空間フィルタとを備え、
前記凸レンズ及び前記空間フィルタは、前記レーザ光の光軸方向に相対的に移動可能であることを特徴とする請求項1に記載の平面表示装置の製造装置。 - 前記レーザ光整形手段に入射する前のレーザ光の光軸を制御する光軸制御手段と、
前記レーザ光整形後のレーザ光の空間強度分布を測定する第二のレーザ光測定手段とを備え、
前記第二のレーザ光測定手段の測定結果に基づいて、前記光軸制御手段が光軸を制御することを特徴とする請求項1または請求項2に記載の平面表示装置の製造装置。 - 前記光軸制御手段は、少なくとも二枚の駆動機構を備えたミラーと、少なくとも一枚の穴の径が可変の虹彩絞りとを備えたことを特徴とする請求項3に記載の平面表示装置の製造装置。
- 前記レーザ光として、連続発振固体レーザ光または時間変調した連続発振固体レーザ光、またはパルス発振固体レーザ光の何れかを用いることを特徴とする請求項1乃至4の何れか1項に記載の平面表示装置の製造装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004022444A JP4567984B2 (ja) | 2004-01-30 | 2004-01-30 | 平面表示装置の製造装置 |
TW093130892A TWI262598B (en) | 2004-01-30 | 2004-10-12 | Apparatus for manufacturing flat panel display devices |
KR1020040094396A KR100711155B1 (ko) | 2004-01-30 | 2004-11-18 | 평면 표시 장치의 제조 장치 |
US10/991,482 US7193693B2 (en) | 2004-01-30 | 2004-11-19 | Apparatus for manufacturing flat panel display devices |
CNB2004100983358A CN100343951C (zh) | 2004-01-30 | 2004-12-03 | 平面显示装置的制造装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004022444A JP4567984B2 (ja) | 2004-01-30 | 2004-01-30 | 平面表示装置の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005217210A JP2005217210A (ja) | 2005-08-11 |
JP4567984B2 true JP4567984B2 (ja) | 2010-10-27 |
Family
ID=34805660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004022444A Expired - Fee Related JP4567984B2 (ja) | 2004-01-30 | 2004-01-30 | 平面表示装置の製造装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7193693B2 (ja) |
JP (1) | JP4567984B2 (ja) |
KR (1) | KR100711155B1 (ja) |
CN (1) | CN100343951C (ja) |
TW (1) | TWI262598B (ja) |
Families Citing this family (33)
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JP4406540B2 (ja) * | 2003-03-28 | 2010-01-27 | シャープ株式会社 | 薄膜トランジスタ基板およびその製造方法 |
KR100753568B1 (ko) * | 2003-06-30 | 2007-08-30 | 엘지.필립스 엘시디 주식회사 | 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법 |
US7405815B1 (en) * | 2003-11-04 | 2008-07-29 | The Boeing Company | Systems and methods for characterizing laser beam quality |
US7374985B2 (en) * | 2003-11-20 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method for manufacturing semiconductor device |
TW200541078A (en) * | 2004-03-31 | 2005-12-16 | Adv Lcd Tech Dev Ct Co Ltd | Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus |
TWI390734B (zh) * | 2005-04-06 | 2013-03-21 | Samsung Display Co Ltd | 製造多晶矽薄膜之方法及製造具有多晶矽薄膜之薄膜電晶體之方法 |
KR20060106170A (ko) * | 2005-04-06 | 2006-10-12 | 삼성전자주식회사 | 다결정 실리콘 박막의 제조방법 및 이를 갖는 박막트랜지스터의 제조방법 |
JP2007221062A (ja) * | 2006-02-20 | 2007-08-30 | Sharp Corp | 半導体デバイスの製造方法および製造装置 |
US7397546B2 (en) * | 2006-03-08 | 2008-07-08 | Helicos Biosciences Corporation | Systems and methods for reducing detected intensity non-uniformity in a laser beam |
US7941237B2 (en) * | 2006-04-18 | 2011-05-10 | Multibeam Corporation | Flat panel display substrate testing system |
CN101104223B (zh) * | 2006-07-10 | 2012-05-23 | 彩霸阳光株式会社 | 激光加工装置 |
JP5030524B2 (ja) * | 2006-10-05 | 2012-09-19 | 株式会社半導体エネルギー研究所 | レーザアニール方法及びレーザアニール装置 |
JP5126471B2 (ja) * | 2007-03-07 | 2013-01-23 | 株式会社ジャパンディスプレイイースト | 平面表示装置の製造方法 |
JP5581563B2 (ja) * | 2007-03-08 | 2014-09-03 | 株式会社日立製作所 | 照明装置並びにそれを用いた欠陥検査装置及びその方法並びに高さ計測装置及びその方法 |
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- 2004-11-18 KR KR1020040094396A patent/KR100711155B1/ko not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
TWI262598B (en) | 2006-09-21 |
CN1649082A (zh) | 2005-08-03 |
KR20050078188A (ko) | 2005-08-04 |
TW200534486A (en) | 2005-10-16 |
US20050170569A1 (en) | 2005-08-04 |
CN100343951C (zh) | 2007-10-17 |
KR100711155B1 (ko) | 2007-04-24 |
JP2005217210A (ja) | 2005-08-11 |
US7193693B2 (en) | 2007-03-20 |
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