TW575866B - Display device with active-matrix transistor and method for manufacturing the same - Google Patents

Abstract

In the invented active-matrix type display device and its manufacturing method, laser beam 208 is selectively irradiated onto amorphous silicon film 104 of the pixel portion of the active matrix substrate 101 composing the display device. After that, transistors and soon of the pixel circuits are formed on the transmute polysilicon film 105. By using the method stated above, it is capable of realizing the display device having the active matrix substrate containing high performance thin film transistors through an extremely economical way.

Description

575866 发明 Description of the invention (The description of the invention should state: the technical field, the prior art, the content, the embodiments, and the drawings of the invention belong to the invention.) BACKGROUND OF THE INVENTION The present invention relates to a display device, and in particular, it is formed by changing the laser For the film quality of the semiconductor film on the insulating substrate, an active matrix type display device using the modified semiconductor film as an active element and a manufacturing method thereof. In the following description, the display device may be referred to as a display device or simply a display.

Active-matrix display devices using active elements such as thin-film transistors as driving elements for pixels arranged in a matrix (or active matrix-type display or display devices) have been widely used. As the related industry knows in detail, at present, most active matrix display devices can use most pixel circuits made of active elements such as thin-film transistors formed using a silicon film as a semiconductor film to be arranged on a substrate. Day quality image. Here, as the above-mentioned active device, a typical example of a thin film transistor will be described as an example.

However, in the thin film transistor using an amorphous silicon semiconductor film (hereinafter referred to as a silicon film) which is generally used as a semiconductor film in the past, the performance of the thin film transistor represented by its mobility is different. A certain limit ^ so it is difficult to form a circuit that requires south speed and south function. In order to achieve the high-mobility thin-film transistors required to provide better image quality, it is effective to modify (crystallize) the amorphous silicon film into a polycrystalline silicon film in advance, and use the crystallized polycrystalline silicon film to form a thin-film transistor. In order to modify (crystallize) and improve this crystallinity, the amorphous 575866 (2) I is said to be purchased using the excimer laser light (or laser beam or laser light for short): Method for modifying silicon film into polycrystalline silicon film. Such a method is described in detail in, for example, Non-Patent Documents 1 to 3.

The modification method of crystallization of an amorphous silicon film irradiated with excimer laser light will be described using FIG. FIG. 26 is an explanatory diagram of a crystallization method using scanning of the most general excimer laser light irradiation, and FIG. 26A shows a structure of a glass substrate forming a semiconductor layer to be irradiated, and FIG. B shows a structure modified by laser light irradiation. The state of sex. This substrate can be made of a material such as glass or ceramic, and the case where a glass substrate is used will be described here. On a glass substrate 3 0 1, an amorphous silicon film 302 deposited through a base layer (SiN, etc., not shown) is irradiated with a linear excimer laser beam having a width of several mm to several 100 mm 3 0 3 As shown by the arrow, when the scanning that moves the irradiation position every 1 to several pulses along one direction (X direction) is performed, the entire amorphous silicon film 3 02 of the substrate 3 0 1 can be modified into Polycrystalline silicon film 3 04. The polycrystalline silicon film modified by this method is subjected to various processes such as etching, wiring formation, and ion implantation to form an active matrix substrate in which a thin film transistor circuit for driving is arranged in each pixel portion, and a liquid crystal is produced by using this substrate Active matrix displays such as displays or organic ELs. Fig. 27 is a partial plan view illustrating a partial plan view of the laser light irradiating portion in Fig. 26 and a configuration example of a thin film transistor portion. As shown in FIG. 27A, in the laser light irradiating portion, most of the crystallized silicon particles having a size of about 0.0 5 // m to 0.5 // m are grown in the plane. The grain boundaries of each silicon particle (ie, silicon crystal) are in a closed state. In FIG. 27A, a transistor portion TRA of a semiconductor film including a portion surrounded by □ as each thin film transistor is formed. The previous modification of the silicon film refers to this crystallization, and it is worth emphasizing that its content is different from the modification of the invention of this -7-575866 (3).

In order to form a pixel circuit using the modified polycrystalline silicon film 304 as shown in FIG. 27B, a portion of the crystallized silicon is used as a transistor portion, and a portion excluding the transistor portion TRA constituting the transistor portion of FIG. 27A is removed by etching. The unnecessary portion forms an island-shaped silicon film. A gate insulating film (not shown), a gate (not shown), a source SD 1, > and an electrode SD2 are arranged on the island PSI. Made of MIS transistor. The formation technology of this transistor is a well-known technology for related industry. In the conventional technology, since a modification operation for crystallization is applied to the entire pixel portion, the modification effect is poor. [Non-Patent Document 1] T.C. Angelis et al; Effect of Excimer Laser Annealing on the Structural and Electrical Properties of Polycrystalline Silicon Thin-Film Transistor, J. Appl. Phy., Vol. 86, pp 4600-4606, 1999. [Non-Patent Document 2]

H. Kuriyama et al; Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Eximer Laser Annealing Method, Jpn. J. Appl. Phy., Vol. 32, pp6190_6195, 1993 〇 [Non-Patent Document 3] K. Suzuki et al; Correlation between Power Density Fluctuation and Grain Size Distribution of Laser annealed Poly-Crystalline Silicon, SPIE Conference, Vol. 3618, pp310-319, 1999. SUMMARY OF THE INVENTION In the above-mentioned prior art, although there are -8-575866 (4) I issued _ said _ continued page advantages However, the economic cost of silicon film modification is quite large, so that the above advantages cannot be fully utilized. In addition to the necessity of using high excimer laser devices, this kind of problem arises because the excimer laser pulses have insufficient intensity and pulse interval, and it takes a long time to modify the silicon film on the substrate.

This problem is more noticeable when it is desired to expand the use of a substrate for a large-scale display device in a multi-chamfer manner in order to provide the display device at low cost. When the size of the substrate is enlarged and the silicon film is modified, extremely high equipment must be used, and only insufficient production can be obtained. Therefore, no display device can tolerate this problem. Therefore, it is generally required to provide a new technology for realizing the modification of a silicon film at a high speed and efficiency using inexpensive equipment even on a large-sized substrate.

A first object of the present invention developed in consideration of the above-mentioned problems is to economically provide a display device having an active matrix substrate having a high-performance thin-film transistor circuit arranged in a matrix-shaped pixel portion, and a second object of the present invention is to Provide specific manufacturing techniques to solve these problems. The present invention is not limited to the modification of a semiconductor film formed on a glass substrate or the like for a display device, and is also applicable to other substrates such as the modification of a semiconductor film formed on a silicon wafer. As a means to solve the above problems, the present invention selectively irradiates a laser beam (hereinafter also referred to as laser light) to a silicon film of a pixel portion, and forms a pixel circuit on the modified silicon film of the pixel portion. This pixel circuit is mainly a thin film transistor. In the manufacture of the active matrix display device of the present invention, a laser beam is selectively irradiated to the silicon film of the pixel portion by using a round trip operation.

〇) The modified silicon film of the pixel portion is preferable to form a pixel circuit. A more ideal method is to centrally arrange the pixel circuit portion, and in this centralized arrangement portion, use a round-trip operation to selectively irradiate the laser beam on the silicon film of the pixel portion, and form a modified silicon film on the pixel portion. Pixel circuit. The modification of the silicon film of the present invention is different from that of the prior art silicon film, and the differences are described below. That is, in the modification of the silicon film of the present invention, the silicon film crystallized due to the modification has a width of 0.1 / zm to 1 0 and a length of 1

The monocrystalline aggregates ranging from / zm to 100 / zm can ensure good carrier mobility. In terms of electron mobility, the value is about 300 cm2 / V · s or more, and ideally, it can reach more than 50 0 cm 2 / V · s.

On the other hand, in the modification of a silicon film using a conventional excimer laser, most of the particles of the crystallized silicon particles in the range of 0.0 5 // m to 0.5 / zm will grow uniformly in the laser light irradiation part. . In terms of electron mobility, a silicon film of about 50 cm2 / V · s can be obtained on average below 100 cm2 / V · s. Although the modification result of such a conventional silicon film is less than 1 cm2 / V · s of the electron mobility of the amorphous silicon film, although the performance is improved, the present invention is characterized by using far more silicon films than in the past. The modification has more excellent modification technology, and the content of the modification of the present invention is different from the modification of the previous silicon film, which should be emphasized. Preferably, the silicon film of the pixel portion of the active matrix substrate constituting the display device of the present invention is an amorphous silicon film (A-Si Film) formed by a CVD method, and the modified silicon film of the pixel portion is a polycrystalline silicon film. (Poly-Si F i 1 m). However, the present invention is not limited to this. The cut film of the pixel portion is a polycrystalline silicon film modified by an amorphous silicon film, and the modified silicon film of the pixel portion is -10-575866 (6) After further modification Polycrystalline silicon films are also available. The "polycrystalline silicon film after modification" as used herein refers to the silicon film that becomes after the amorphous silicon film has crystallized, and the grain boundaries of each crystal are basically in a closed state. The "polycrystalline silicon film after further modification" refers to a polycrystalline silicon film whose grain boundary changes to a grain boundary state with a crystalline structure continuous in a specific direction. In addition, the present invention may also adopt a configuration in which the silicon film of the pixel portion is a polycrystalline silicon film formed by a sputtering method, and the modified silicon film of the pixel portion is a further modified polycrystalline silicon film. In addition, the silicon film of the pixel portion may be a combination of a polycrystalline silicon film formed by a CVD method, and the modified silicon film of the pixel portion is a polycrystalline silicon film after further modification. In the present invention, since the laser beam is selectively irradiated to the silicon film of the pixel portion on the substrate, the selectively irradiated area, that is, the area of the modified silicon film, forms a stripe along the substrate surface. Banding is its characteristic. When such a shape is actively adopted, in the process of forming a thin film transistor, there is no need to irradiate a laser beam for areas other than the pixel portion removed by the etching process, so that unnecessary operations can be greatly reduced. The laser used in the present invention is preferably a continuous oscillating solid laser with an oscillation wavelength of 400 nm to 2000 nm. Continuous oscillation laser light For the amorphous silicon film or polycrystalline silicon film to be annealed, it is ideal to use an absorptive wavelength, that is, from ultraviolet to visible wavelengths. More specifically, Ar laser or KΓ laser can be applied. Radiation and its second harmonic, Nd: YAG laser, Nd: YV04 laser, Nd: YLF laser second harmonic and third harmonic. However, if the size and stability of the output are taken into consideration, the second harmonic of the L D (laser diode) excitation type N d: YAG laser (wavelength 575866) is used.

⑺ 532nm) or Nd · YV04 laser first harmonic (wavelength 532nm) is most ideal. The upper and lower limits of the laser wavelength can be determined by taking into consideration both the range of light absorptivity that can effectively produce Shi Xi film and the angle of a stable laser light source that can be obtained economically.

The solid laser of the present invention is characterized in that it can stably supply laser light that can be absorbed by Shi Xi film, and can reduce the economic burden of gas replacement operations and the deterioration of the emission part peculiar to gas lasers. From the perspective of economic benefits In terms of, it can be used as an ideal means for silicon film modification. However, the present invention does not actively exclude that the laser uses an excimer laser having a wavelength of 150 nm to 400 nm. In the present invention, it is preferable to optically adjust the laser light to make the spatial distribution of the intensity uniform, and then collect the light with the lens system and irradiate it. In addition, in order to adjust the crystallinity of the modified silicon film, it is desirable to optically form a continuous oscillation laser light, convert the laser light into pulses, and then irradiate it. The laser pulse width at this time is preferably selected from a range of more than 100 ns and less than 1 m s.

In the present invention, when the substrate is irradiated with the strip-shaped laser light, the irradiation width is preferably a width of 20 / m to 100 / m. Such a width is determined by considering the economy from the width of the area required for the pixel circuit and the ratio of the width to the pixel pitch. The length of the irradiated portion is determined in consideration of the size of the substrate and the size of the pixel area. In the present invention, laser light irradiation can be intermittently performed in synchronization with the scanning of the platform. At this time, the effect of the present invention will not be lost. In the present invention, the laser light is characterized by scanning at a speed of 1 m / s to 1000 m / s. The lower limit of the scanning speed is from taking into account the scanning substrate -12-575866

The time required for the specific area within the ⑻ is determined from the perspective of economic burden, and the upper limit is limited by the ability of the machinery and equipment required for scanning.

In the present invention, the laser light is irradiated with a laser light focused by a scanning optical system, and an optical system in which a single laser light is focused into a single beam may be used. However, when a single laser light is divided into a plurality of light beams to be irradiated, a plurality of pixel portions can be scanned and irradiated at the same time, so that the irradiation efficiency of the laser light can be significantly improved. Dividing the laser light into a plurality of beams is an ideal form of the present invention. This scanning form of the laser light is particularly desirable when processing a large-sized substrate in a short time. Further, in the present invention, when the laser light irradiation is performed by operating a plurality of laser oscillators in parallel, the efficiency of laser irradiation can be significantly improved. This configuration is particularly desirable when processing large-sized substrates in a short time.

Furthermore, in the present invention, the laser light irradiation area selectively scanned is not limited to the pixel circuit portion, and a peripheral circuit portion may be formed. When the performance of the thin film transistor formed in the pixel circuit portion can meet the performance of the peripheral circuit, it is recommended to select a method of irradiating laser light to the formation area of the peripheral circuit. At this time, since the number of driving circuit chips (LSI driver, driver 1C) required for driving the display can be greatly reduced, it also has great economic benefits. In addition, in the present invention, the circuit formed by the modified silicon film is not limited to a general top-gate thin-film transistor circuit, and a bottom-gate thin-film transistor circuit can also be formed. When a single-channel circuit consisting of only N-channel MIS or P-channel MIS is required, from the standpoint of simplification of the process, it is sometimes preferable to use a bottom gate type. At this time, because the gate wiring needs to be modified by laser irradiation on the silicon film through the insulating film, the high-melting point -13-575866 (9) Invention of the gate wiring material should be used_continued metal. Therefore, a gate wiring material using tungsten (W) or molybdenum (Mo) as a main component is one of the features of the present invention. When manufactured by the method of the present invention described above, as a result of greatly improving the efficiency of laser light irradiation, an active matrix substrate having a pixel circuit with an arrangement pitch equal to the pixel pitch can be obtained.

However, in the layout of the pixel circuit, an amazing effect can be obtained that can further improve the efficiency of laser light irradiation. In this improved configuration of the pixel circuit, the circuit portion of the two rows of pixels arranged at equal intervals is centrally arranged in the central portion of the row, and laser light is selectively irradiated only in the pixel area arranged in this concentrated manner to modify In the case of a silicon film, the efficiency of laser light irradiation can be increased to about 2 times. In the present invention, a feature is that the arrangement pitch of the pixel circuits is equal to twice the pixel pitch.

When an active matrix substrate having a semiconductor structure having a pixel circuit or a peripheral circuit according to the present invention is used, a liquid crystal display device having excellent day quality can be provided inexpensively. When the active matrix substrate of the present invention is used, an organic EL display device having excellent day quality can be provided at a low cost. In addition, in the present invention, not only the liquid crystal display device and the organic EL display device, but also the same semiconductor structure can be applied to an active matrix display device having other methods including a pixel circuit and a peripheral circuit. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, the embodiment of the present invention will be described in detail using drawings. First, the outline of the present invention will be described with reference to FIGS. 1 to 7. It should be noted that the description of these drawings also overlaps with the description of the embodiment of the embodiment described later. First, on a substrate using glass as a suitable material (hereinafter referred to as glass-14-575866 (ίο) I hairpin chain: · substrate) 1 0 1, a thin film having a function as a barrier film is deposited by CVD or the like. A SiN film 102 and a SiO film 103 are deposited on the amorphous silicon film 104 with a thickness of about 50 nm by a CVD method (FIG. 1A). It should be emphasized that the layer structure, film thickness, and silicon film thickness of the above barrier film are just examples, and the present invention should not be limited by this description. Thereafter, the laser irradiation method of the present invention is used to irradiate only the pixel portion 'to modify the silicon film of the portion where the pixel circuit is to be formed (Fig. 1B). FIG. 2 is a schematic view showing a plane of an irradiated portion in the substrate. In the present invention, the modified silicon film 105 can be formed into a strip shape parallel in a specific direction. Fig. 3 shows an example of a device for performing such laser light irradiation. The glass substrate 1 0 1 on which the amorphous stone film 1 04 of the present invention is deposited is set on a driving platform 2 that moves in the XY direction 2 0 1 ′ The position alignment is performed by the reference position measurement camera 202 and the reference position measurement camera The reference position measurement signal 202 of 202 is input to the control device 204. The driving device 205 moves the driving platform 2 1 at a specific speed in accordance with the control signal 206 ′ executed by the control device 204 to execute the fine adjustment of the irradiation position, and scans the glass substrate in one direction. In synchronization with this scanning, the amorphous light film 104 'is irradiated with the laser light 208 from the irradiation device 207 to modify the amorphous silicon film 104 into a polycrystalline silicon film 105. An optical system 2 10, a homogenizer, etc. 2 1 0, a reflecting mirror 2 1 1 and a condenser lens system 2 1 2 are arranged in the irradiation device 2 7 to form a desired irradiation beam. The irradiation time and intensity of the laser light can be adjusted using the power-on-power-off (hereinafter referred to as ON-OFF) signal 213 and the control signal 2 1 4 from the control device 204. FIG. 4 is a flowchart showing such an irradiation sequence. It is worthy to be strong -15-575866 (11) I invention is said to be a continuation sheet. It is important to note that in the present invention, the irradiation device 207 that performs most of the above-mentioned scans in parallel is used to perform parallel operations, which can greatly increase the speed of irradiation.

In the present invention, it is preferable to adopt the following irradiation method: that is, by using the above-mentioned action, scanning the substrate in one direction (X direction), and after irradiating, the relative position of the irradiation device 207 and the glass substrate is aligned with the above The other direction (Y direction) that crosses in one direction moves slightly, while the other side scans in the opposite direction, and the back and forth motion of the irradiation. This round-trip operation can effectively use the scanning time of the platform for irradiation, so it has the effect of significantly reducing the time required to irradiate all the pixel portions on the glass substrate.

The outline of the laser light irradiation of the present invention is shown in more detail, as shown in FIG. 5. In the present invention, as shown in FIG. 5B, an amorphous silicon film 104 formed on a glass substrate 101 shown in FIG. 5A through a base film (not shown) is irradiated with laser light on one side. Scan the irradiated part with one side facing the X direction. As a result, the modified silicon film 105 can be formed into a narrow band shape (strip shape). Fig. 6 is an explanatory diagram of a configuration of a laser light irradiation section and a thin film transistor of the present invention. The same figure A is a plan view showing a laser light irradiating part, and the same figure B is a plan view showing an example of the structure of a thin film transistor. As shown in FIG. 6A, when the amorphous silicon film 104 on the glass substrate 101 is scanned and irradiated with laser light, the crystallized silicon film can grow along the laser light scanning direction (same as the X direction in the figure) in the laser light irradiating portion Into a band. In this growing region of the crystallized silicon film, that is, the region of the silicon film, a transistor portion TRA shown by a dotted line is formed. The modification of the silicon film of the present invention refers to such crystallization, and the width of the above-mentioned band of the crystallized part is 0.1 // m to 1 0 / zm, and the length is 1 to 1 0 0 // m range-16 -575866 (12) I _say_continued

Degree of single crystal aggregate. When a pixel circuit is formed using this modified silicon film 105, the modification efficiency can be greatly improved. Specifically, in order to use a portion of the crystallized silicon film as the transistor portion TRA shown in FIG. 6A and remove unnecessary portions by etching, as shown in FIG. 6B, an island portion PSI of the silicon film is formed. A gate insulating film (not shown), a gate GT, a source SD 1, and a drain SD2 are arranged to make a MIS transistor. The formation technology of such a transistor is a well-known technology for related industries. In addition to the shape of the light spot irradiated with the laser light on the glass substrate, the shape may be oval, rectangular, rectangular, or the like. This shape is an adjustable range of the optical system.

In the present invention, as shown in FIG. 1C, the modified silicon film 105 formed in the above manner is etched to form a specific circuit, and a gate insulating film (not shown) and a gate electrode are sequentially formed. (Or gate wiring) 1 06, interlayer insulating film 1 07, source / drain wiring 1 0 8, passivation film 1 0 9, transparent electrode 1 10 that constitutes a pixel electrode. Therefore, an active matrix substrate in which a transistor circuit using the modified silicon film 105 is disposed on a pixel can be formed. The detailed process of the related processing technology for the formation of the transistor circuit and the electrode is well known to the relevant industry, and the part that requires additional steps such as ion implantation and activation annealing in the process is also a well-known technology. Fig. 7 is a plan view for explaining the relationship between the pixel portion of the active matrix substrate of the present invention and the laser light irradiation area. Although FIG. 7 does not necessarily correspond to the actual size, the relationship between the pixel 401, the pixel circuit section 402, and the laser light irradiation section 403 can be displayed in a pattern. It can be seen that in the present invention, the area of the laser light irradiating portion 403 may be approximately 1/2 to 1/5 of the area of the entire pixel portion. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the embodiments. -17-575866 (13) I Invention _ Continued [First embodiment]

A first embodiment of the present invention will be described with reference to FIGS. 1 to 5 and 8. FIG. 1 is a cross-sectional view showing a mode of a step of constituting an active matrix substrate of the first embodiment of the display device of the present invention, and FIG. 2 is a view showing a modification of the silicon film of the active matrix substrate of the first embodiment of the display device of the present invention FIG. 3 is a structural diagram showing a pattern of a laser light irradiation device for modifying a silicon film of an active matrix substrate according to a first embodiment of the display device of the present invention. FIG. 4 is a flowchart showing the operation steps of laser light irradiation for modifying the silicon film of the active matrix substrate according to the first embodiment of the display device of the present invention, and FIG. 5 is a flowchart showing the first embodiment of the display device of the present invention A three-dimensional explanatory diagram of laser light irradiation for modification of a silicon film of an active matrix substrate. 8 is a plan view for explaining the relationship between the pixel portion of the active matrix substrate and the laser light irradiation area in the first embodiment of the present invention.

First, as shown in FIG. 1A, a heat-resistant glass substrate 101 having a thickness of about 0.3 mm to 1.0 mm and preferably having a small amount of deformation and shrinkage during processing at 400 ° C to 600 ° C is prepared. On this glass substrate 101, a 50 nm-thick SiN film 102 and a 50-nm-thick SiO film 103 having a function as a thermal, chemical barrier film are continuously and uniformly deposited by a CVD method on the barrier film. A 50-nm-thick amorphous silicon film 104 is deposited by a CVD method. The deposition method of the barrier film and the amorphous silicon film using this CVD method is a well-known technology for related industries. Thereafter, the laser irradiation method of the present invention is used to irradiate only the pixel portion, thereby modifying the silicon film of the portion where the pixel circuit is to be formed into a polycrystalline silicon film 105 by using laser light irradiation. -18-575866 (14) Issue_speak_continued Figure 1B is a cross-sectional view showing a state where a desired portion of an amorphous stone film is modified into a polycrystalline silicon film by laser light irradiation. As a device for implementing laser light irradiation shown in Fig. 1B, the device shown in Fig. 3 can be used. The outline of the laser light irradiation using this irradiation device overlaps with the previous part of the "detailed description of the preferred embodiment". In this embodiment, an amorphous silicon film 10 is deposited. The sloped glass substrate 1 of 4 is installed on the driving platform 201 that moves in the X-Y direction, and the position alignment is performed by the reference position measurement camera 202. The reference position measurement signal 203 is input to the control device 204, and according to the control signal 206 input to the driving device 205, a fine adjustment of the irradiation position is performed, and the platform 2 1 is moved at a specific speed in a direction (X in FIG. 1) Direction) scan. In synchronization with this scan, the amorphous silicon film 104 is irradiated with laser light 208 from the irradiation device 207 to modify the silicon film. As described above, in the irradiation device 2007, for example, the second harmonic wave (wavelength 532nm) of the LD (laser diode) excitation type Nd: YVO4 laser is used. The laser light source 209 of W, the optical system 2 10 of the homogenizer, etc., the mirror 2 1 1 and the condenser lens system 2 1 2 can form a desired irradiation beam. The irradiation time and intensity of the laser light can be adjusted using the ON-OFF signal 213 and the control signal 214 from the control device 204. Fig. 4 is a flowchart showing the irradiation sequence of laser light using the irradiation device of Fig. 3. In this embodiment, the laser light is optically adjusted to make the spatial distribution of the intensity uniform, and then the lens is used to collect light and irradiate it. In addition, in order to adjust the crystallinity of the modified silicon gallium, it is necessary to optically form a continuous oscillation laser light, so that the laser light is converted into -19-575866 (15) I after buying a pulse, it is appropriate to irradiate it. The laser pulse width at this time is preferably selected from a range of more than 100 ns to less than 1 m s. For example, in order to obtain a particle size of 5 / zm, the pulse width is selected as the optimal laser condition. FIG. 2 is a plan view showing a pattern of the irradiated portion in the substrate, and it is shown in this embodiment that the modified silicon film 105 can be formed into a stripe shape. Since the irradiation beam diameter of the laser light is required to be larger than the circuit area of the pixel portion, 30 / zm is selected as an example.

In this practical example, as shown in FIG. 8, it is preferable to use the following irradiation method: That is, using the above-mentioned operation, after irradiating the substrate in the X direction (A direction = the aforementioned one direction), it moves slightly in the Y direction On the other hand, while scanning in the reverse direction (direction B) along the above-mentioned X direction, two-dimensional irradiation is performed on the substrate surface by the reciprocating action of irradiation. As an example of the scanning speed, 300 m / s is selected. When this round-trip operation is repeated, the silicon film of all the pixel portions can be modified into a good silicon film. The modified silicon film follows the irradiation direction of the laser light, so that the single crystal region thereof has a characteristic crystalline form that grows asymmetrically in one direction as shown in FIG. 6. The modified silicon film 105 formed in the above manner is etched to form a specific circuit as shown in FIG. 1C, and a gate insulating film (not shown) and a gate electrode (FIG. 6B) are formed in this order. Gate GT) 1 0 6, interlayer insulation film 1 0 7, source / drain wiring 1 0 8, passivation film 1 0 9, transparent electrode 1 1 0 constituting the pixel electrode, so it can be formed by using modified The transistor circuit of silicon film 105 is arranged on the active matrix substrate of the pixel circuit. In the formation of this transistor circuit, it is preferable that the moving direction of the electrons of the gate or the positive hole is arranged parallel to and consistent with the growth direction of the crystal. The so-called parallel and -20-575866 ⑼ hair_description Continued Consistent, means that the angle of the crystal growth direction of the polycrystalline silicon film is 0 degrees or 180 degrees. The allowable error of this angle is within 30 degrees. The reason is shown in Table 1. Table 1 Direction (deg) Electronic mobility (cm2 / Vs) 0 520 30 500 60 260 90 150 120 220 150 5 10 180 580 [Table 1]

Table 1 shows the verification results of the relationship between the direction of electron movement and the scanning direction (angle: deg) of laser light irradiation and the degree of electron movement (cm2 / Vs). As shown in Table 1, the relationship between the angle (absolute value) formed by the crystal growth direction defined by the scanning direction irradiated with laser light and the electron mobility is less than 30 degrees when the error is 0 degrees or 180 degrees. The ground must be above about 300 cm2 / Vs. On the other hand, when the error from the crystal growth direction exceeds 30 degrees, it is obvious that the electron mobility decreases, and in the right-angle direction (90 degrees), the electron mobility decreases extremely. The examples are based on this knowledge, and the same applies to the examples described later. The feature of this arrangement is caused by the round-trip operation that allows laser light irradiation of this embodiment (including the entirety of the invention of other embodiments described later) to be irradiated. Pixel -21-575866

(17)

When the circuit configuration is the same, the pixel circuit portion (the scanning portion in the direction A in FIG. 8) formed in the laser light irradiation portion 403 formed by the forward path and the pixel circuit formed in the laser light irradiation portion 403 formed by the return path In the scanning section (scanning section in the B direction in FIG. 8), there is a difference of 0 degrees or 180 degrees between the carrier moving direction and the crystal growth direction. In the entirety of the present invention including this embodiment, since it is found that such a difference hardly affects the transistor characteristics, two arrangements of 0 degree and 180 degree are allowed. It should be emphasized that, based on this inconspicuous result, round-trip irradiation is possible. By using the above-mentioned positive crystallization direction configuration, the probability of carriers moving across the crystal grain boundary can be reduced, so the deterioration of the characteristics caused by the disorder of the grain boundary can be suppressed to the minimum, and the best transistor circuit can be obtained. The detailed process of this kind of related processing technology of transistor circuit and electrode formation is well known to the relevant industry, and it is also a well-known technology that the process including ion implantation, activation annealing, etc. must be added during the process.

With this method, a thin film transistor circuit using a polycrystalline silicon semiconductor film can be arranged in the pixel portion. The performance of the thin film transistor obtained in this embodiment, for example, when forming an N-channel MIS transistor, the field effect mobility can be maintained above about 300 cm2 / V · s, and the difference in threshold voltage is suppressed to Below ± 0.2V, it is possible to manufacture a display device using an active matrix substrate that operates with high performance and high reliability and has excellent uniformity between devices.

Also, in this embodiment, instead of ion implantation of phosphorus imparted to electron carriers, boron ion implantation imparted to positive hole carriers can be used to manufacture P-channel MIS transistors, and the photomask can be replaced. In the configuration, an N-type and a P-type are formed on the same substrate, and a so-called CMOS type circuit is formed. Using CMOS -22-575866

In the case of a ⑼-type circuit, it is expected to improve the frequency characteristics and is suitable for high-speed operation. On the contrary, the increase in the number of photomasks leads to an increase in the number of manufacturing processes, but it has become a major factor in achieving economic benefits. This detailed overview of semiconductor manufacturing technology and semiconductor circuit technology is well known to the relevant industry. As for what kind of semiconductor device should be constituted, it is usually necessary to make the most appropriate after considering the characteristics required for the display device and the manufacturing cost. Decide.

The technical method for manufacturing a liquid crystal display device using the active matrix substrate of this embodiment is well known to the relevant industry. Specifically, the liquid crystal alignment film layer is formed on the active matrix substrate. Here, the alignment regulation force is given by friction or the like. After the sealant is formed around the pixel portion, similarly, the alignment film layer will be formed with a specific gap. The color filter substrates are arranged to face each other, liquid crystal is sealed in this gap, and the sealing inlet of the sealant is sealed with a sealing material to form a liquid crystal cell.

Thereafter, the gate driver L S I and the source driver L S I are mounted on a peripheral portion of the liquid crystal cell to form a liquid crystal display module. A polarizing plate, a light guide plate, a backlight, and the like are mounted on the liquid crystal display module to complete a liquid crystal display device. Since the liquid crystal display device manufactured using the active matrix substrate of this embodiment is provided with the above-mentioned excellent polycrystalline silicon thin film transistor circuit on its pixel circuit, it has excellent current driving capability, and is therefore suitable for high-speed operation. Furthermore, since the difference in threshold voltage is small, there is an advantage that a liquid crystal display device having excellent day quality uniformity can be provided at low cost. In addition, the organic EL technology and method for manufacturing an organic EL display device using the active matrix substrate of this embodiment are well known to those in the related art. Specifically, -23-575866

(19)

A storage pattern for separating an organic EL element is formed on an active matrix substrate, and a positive electrode transport layer, a light emitting layer, an electron transport layer, a cathode metal layer, and the like are sequentially steam-forged from the transparent electrode surface to form a laminated layer. A sealing material is arranged around the pixel portion of the substrate on which this laminated layer is formed, and sealed with a sealing can. This sealing technology is used to protect the organic EL of the pixel portion from the intrusion of moisture and the like. Protecting the organic EL from the intrusion of moisture etc. is a necessary measure to suppress the deterioration of the image quality. It is recommended to install a desiccant in a sealed tank.

In the active matrix driving of the organic EL display device, since the organic EL element is a current-driven light emitting element, it is necessary to use a high-performance pixel circuit to provide a good image, especially a CMOS-type pixel circuit. The active matrix substrate of this embodiment is suitable for use as a high-performance active matrix substrate that can cope with such requirements. The organic EL display device using the active matrix substrate of this embodiment can maximize the advantages of this embodiment. This display device also deserves to be emphasized here. [Second Embodiment] In this embodiment, the silicon film modified by irradiating laser light is not limited to an amorphous silicon film, but a polycrystalline silicon film modified by an amorphous silicon film may also be used. This is a polycrystalline silicon film in which the modified silicon film in the pixel portion is further modified. In addition, in this embodiment, the silicon film of the pixel portion is a polycrystalline silicon film formed by a sputtering method, and a polycrystalline silicon film in which the modified silicon film of the pixel portion is further modified may also be used. In addition, the silicon film of the pixel portion is a polycrystalline silicon film formed by a CVD method, and a modification of the pixel portion may also be used. -24-575866

(20) Combination of polycrystalline silicon film after further modification of the silicon film. An embodiment of the present invention in which a silicon film different from the first embodiment is modified will be described with reference to the foregoing drawings.

As in the first embodiment, a heat-resistant glass substrate 101 having a thickness of about 0.3 mm to 1.0 mm, and preferably a small amount of deformation and shrinkage during processing at 400 ° C to 600 ° C, is prepared. On this glass substrate, an approximately 50 nm-thick SiN film 102 and an approximately 50 nm-thick SiO film 103 having a function as a thermal, chemical barrier film are continuously and uniformly deposited by a CVD method. A 50-nm-thick amorphous silicon film 104 is deposited by a CVD method (see FIG. 1A).

The crystallization method of scanning an amorphous silicon film by irradiating with an excimer pulse laser light will be described with reference to the foregoing FIG. 26. As shown in FIG. 26A, on a glass substrate 301, an amorphous silicon film 3 02 deposited through a base layer (not shown) is irradiated with a linear excimer laser beam having a width of several mm to several 100 mm. 303. By scanning by moving the irradiation position every one to several pulses, the amorphous silicon film 3 2 in a wide area can be modified into a polycrystalline silicon film 3 4. When the substrate is irradiated with such a wide area, the amorphous silicon film can be modified into a polycrystalline silicon film. For the silicon film modified by this excimer pulsed laser light, when the modification of the laser light irradiation of this embodiment is performed as in the first embodiment, the crystallinity of the polycrystalline silicon film can be further improved. In the implementation form of this embodiment, after the modification of the laser light irradiation of this embodiment, the active matrix substrate of the present invention and a liquid crystal display device using the substrate can be manufactured by using exactly the same steps as in an embodiment. The feature that is particularly noteworthy in this embodiment is that despite using the prior -25-575866 (21) I issue _ say _ read; buy

The finely crystalline silicon film is produced by excimer pulse laser light irradiation, but the polycrystalline silicon film produced by laser light irradiation is not different from the polycrystalline silicon film produced from amorphous silicon film. That is, even when the excimer pulse laser light irradiation is performed, in the thin film transistor using the polycrystalline silicon film obtained in this embodiment, for example, when the N-channel MISS transistor is made, the field effect mobility can be maintained at Above about 3 00 cm2 / V · s, and the difference in threshold voltage is suppressed below 0.2V, it is possible to manufacture active matrix substrates that operate with high performance and high reliability and have excellent uniformity between devices. And this substrate can be used to obtain a high-quality display device. According to the known knowledge in this technical field, the amorphous silicon film can be crystallized by the excimer pulse laser light irradiation. In this crystallization, a polycrystalline silicon film composed of fine crystals below 1 // m can be obtained. In a thin film transistor formed of this polycrystalline silicon film, for example, when the N-channel MIS transistor is made, the field effect mobility is about Below 100 cm2 / V · s, and the difference in threshold voltage is quite large. Compared with this well-known knowledge, it can be understood that the excellent effect of this embodiment is obvious.

[Third embodiment] In this embodiment, the silicon film constituting the object modified by irradiating laser light is not limited to an amorphous silicon film. This is also as shown in the embodiment described in the second embodiment above. The silicon film of this embodiment may be a polycrystalline silicon film modified by an amorphous silicon film, or a modified silicon film of a pixel portion. Modified polycrystalline silicon film. In addition, in this embodiment, the silicon film of the pixel portion is a polycrystalline silicon film formed by a sputtering method, and a polycrystalline silicon film in which the modified silicon film of the pixel portion is further modified may also be used. In addition, the -26-575866 (22) I of this pixel section is _say_continued_ The silicon film is a polycrystalline silicon film formed by the CVD method, and the modified silicon film of the pixel section can also be modified. A combination of polycrystalline silicon films. Next, referring to Fig. 9, another embodiment of the present invention in which a silicon film different from the foregoing embodiment is modified will be described.

Fig. 9 is a cross-sectional view showing a pattern of steps of constituting an active matrix substrate according to a third embodiment of the display device of the present invention. As in the first embodiment, a heat-resistant glass substrate 501 having a thickness of about 0.3 mm to 1.0 mm, and preferably having a small amount of deformation and shrinkage during processing at 400 ° C to 600 ° C, is prepared. On this glass substrate 501, a 50-nm-thick SiN film 502 and a 50-nm-thick SiO film 503 having the function of a thermal, chemical barrier film are continuously and uniformly deposited by a CVD method. On the barrier film, A 50-nm-thick silicon film 504 is deposited by a CVD method (see FIG. 9A).

Thereafter, the laser light irradiation method using the same device as described in the first embodiment is used to irradiate only the pixel portion, so that the silicon film of the portion to be formed into a pixel circuit is irradiated with laser light from the amorphous silicon film 5 04 It is modified into a polycrystalline silicon film 5 05 (see FIG. 9B). As shown in FIG. 9C, the modified silicon film 5 5 is subjected to an etching process to form a specific circuit, and a gate insulating film (not shown) and a gate wiring (becoming a gate electrode) 5 are formed in this order. 06. The interlayer insulating film 5 0 7, the source electrode and the electrode wiring 5 0 8, the purification film 5 9, and the transparent electrode 5 1 0 constituting the pixel electrode. Therefore, it is possible to form an active matrix substrate in which a transistor circuit using a modified silicon film 505 is disposed on a pixel. In the formation of this transistor circuit, the direction of movement of the electrons or the positive hole of the gate is preferably arranged parallel to and consistent with the growth direction of the crystal of the stone evening film. This is also the same as the first embodiment. -27-575866 (23) I issue _ 讹 续 Continued In this example, due to the difference in the crystal growth direction based on the reciprocating action of laser light irradiation, the movement direction and crystal of the carrier of the thin film transistor in the pixel portion The growth direction will produce a difference of 0 degrees or 180 degrees. It is worth noting that in this case, this difference has little effect on the transistor characteristics. The relationship between the angle (absolute value) formed by the direction of electron movement and the direction of crystal growth defined by the laser scanning direction of the present invention and the degree of electron movement is as described in Table 1 in the first embodiment.

The performance of the thin film transistor on the active matrix substrate obtained in this embodiment is as excellent as that of the first embodiment and the second embodiment. For example, when making an N-channel MIS transistor, the field-effect mobility can be kept above about 300 cm2 / V · s, and the difference between threshold voltages can be kept below ± 0.2V.

The method for manufacturing a liquid crystal display device using the active matrix substrate of this embodiment is a well-known method as described in the foregoing first and second embodiments. When it is used in a liquid crystal display device, its high-speed display operation can be obtained. In addition, a display device having excellent uniformity of day quality can be provided inexpensively. [Fourth embodiment] In this embodiment, the silicon film that is modified by irradiating laser light is not limited to an amorphous silicon film, but as described in the foregoing embodiment, it is made of amorphous silicon. The polycrystalline silicon film after the film modification may also be a polycrystalline silicon film after the modified silicon film of the pixel portion is further modified. In addition, in this embodiment, the stone film of the pixel portion is a polycrystalline stone film formed by a coin shot method, and a polycrystalline silicon film in which the modified silicon film of the pixel portion is further modified may also be used. In addition, the silicon film of the pixel portion is formed by the CVD method. -28-575866 (24) Invention _continued crystalline silicon film, you can also use the modified silicon film of the pixel portion after further modification A combination of polycrystalline silicon films.

As in the first embodiment, a heat-resistant glass substrate having a thickness of 0.3 mm to 1.0 mm, and preferably a small amount of deformation and shrinkage during heat treatment at 400 ° C to 600 ° C, is prepared. On this glass substrate, a 50-nm-thick SiN film 502 and a 50-nm-thick SiO film 503 having a function as a thermal, chemical barrier film are continuously and uniformly deposited by a CVD method. On the barrier film, CVD is performed. A polycrystalline silicon film is deposited to a thickness of 50 nm. The technology for depositing a polycrystalline silicon film by the CVD method is also a technology well known to related industry. When the method of this embodiment is adopted, the crystallinity of the polycrystalline silicon film obtained by the CVD method can be greatly improved. The effect of this embodiment does not depend on the film quality of the silicon film that is the object of laser light irradiation, but rather shows that a polycrystalline silicon film that is stable after irradiation can be obtained, which is a feature of this embodiment.

The method for manufacturing a liquid crystal display device using the active matrix substrate of this embodiment is a well-known method as described in the aforementioned first to third embodiments. When it is used in a liquid crystal display device, its high-speed display operation can be obtained. In addition, a display device having excellent uniformity of day quality can be provided inexpensively. [Fifth Embodiment] This embodiment will be described with reference to Figs. 10, 11, 12, 13, 14, and 15. This embodiment starts from the arrangement of the pixel circuits on the active matrix substrate as one of the embodiments of the present invention, which can greatly improve the laser irradiation effect of the present invention. FIG. 10 is a plan view illustrating an example of a pattern of a laser light irradiating portion according to the fifth embodiment of the present invention, and FIG. 11 is a laser -29-575866 (25) illustrating the fifth embodiment of the present invention. Continued page: Plan view of another example of the pattern of the light irradiating portion, FIG. 12 is a plan view illustrating another example of the pattern of the laser light irradiating portion of the fifth embodiment of the present invention, and FIG. 1 3 illustrates the fifth example of the present invention. A plan view of another example of the pattern of the laser light irradiating portion of the embodiment. FIG. 14 is a plan view illustrating still another example of the pattern of the laser light irradiating portion of the fifth embodiment of the present invention. A plan view of still another pattern example of the laser light irradiation portion of the fifth embodiment.

In the patterns of the laser light irradiating portions shown in FIGS. 10, 11, 12, 13, 14, and 15, the pixel circuits are all arranged at equal intervals in the two rows of the pixels 601 in the X direction. The rows of pixel regions formed by the portions 602 are collectively arranged in the central portion adjacent in the Y direction. In addition, when only the pixel regions arranged intensively are used as the selective laser irradiation section 603, the efficiency of laser light irradiation can be increased to about 2 times. It is characteristic that the arrangement pitch of the pixel circuits of the patterns of these laser light irradiating portions is equal to twice the pixel pitch.

In the method of arranging pixels, although there are examples other than the examples shown in FIG. 10, FIG. 11, FIG. 12, FIG. 1, FIG. 3, FIG. 14 and FIG. 15 described above, it should be emphasized that: Configurations with an arrangement pitch equal to twice the pixel pitch are included in this embodiment. Also, among these configurations, regarding the choice of the configuration, consideration should be given to the layout design of the gate side and source side of the thin film transistor to be formed, the pixel circuit configuration (pixel configuration), and the pixel circuit. After the driving method, make the most appropriate choice. In addition, the specific manufacturing method of the active matrix substrate may be the same as the method described in the first embodiment, and the laser beam irradiation width is selected to be about 70 // m in accordance with the centralized configuration of the pixels, for example. The efficiency is improved to about 1-30-575866 (26) Invention. The performance page is about twice as large as the case. In the case of this configuration, the laser irradiation can also be applied for round-trip scanning, which should also be emphasized here.

Next, referring to FIG. 16, FIG. 17, FIG. 18, FIG. 19, FIG. 20, and FIG. 21, the configuration of the pixel portion (1 ay ut) in the case where this embodiment is specifically applied to a liquid crystal display device will be described. ). FIG. 16 is a plan view for comparatively explaining a pixel arrangement of a pixel portion of a conventional TN-type liquid crystal display device used in the fifth embodiment of the present invention, and FIG. 17 is a TN-type liquid crystal display showing an example of the fifth embodiment of the present invention A plan view of a pixel arrangement of a pixel portion of the device. FIG. 18 is a plan view showing a pixel arrangement of a pixel portion of a TN liquid crystal display device for explaining another example of the fifth embodiment of the present invention. FIG. A plan view of a pixel arrangement of a pixel portion of a conventional IP S-type liquid crystal display device used in the fifth embodiment of the invention. FIG. 20 is a diagram showing a pixel portion of an IP S-type liquid crystal display device of an example of the fifth embodiment of the invention. A plan view of a pixel arrangement. FIG. 21 is a plan view illustrating an example of a pattern of a pixel portion and a laser light irradiation portion including a peripheral circuit portion of a display device according to a fifth embodiment of the present invention. -

A typical arrangement diagram of the pixel arrangement of a conventional TN (twisted nematic) type liquid crystal display device is shown in FIG. 16, which shows a configuration equivalent to the aforementioned FIG. 7. In the pixel arrangement shown in FIG. 16, a gate electrode 1 0 0 2 of polycrystalline silicon 1 0 0 4 is arranged at the intersection of the gate wiring 1 0 0 6 and the data wiring 1 0 8 arranged in a lattice shape. The driving transistor is connected via the contact hole 1 111 to control the voltage of the transparent electrode 10 0 of the pixel electrode. The storage (capacitance) part 1 1 10 for maintaining the display voltage is generally an overlapping part of the transparent electrode 1 0 10 and the gate wiring 1 0 6 in the previous stage. Representative configuration diagram of the pixel configuration of the TN-type liquid crystal display of the present invention

As shown in Fig. 17, a configuration equivalent to Fig. 16 is presented. That is, the two-pixel gate wirings 10 6 can be collectively arranged at equal-spaced data wirings 108, so that the centralized thin-film transistor configuration can be realized. However, the conventional pixel arrangement as shown in FIG. 16 cannot be used to form a storage section using a part of the gate wiring in the previous stage. Therefore, it is necessary to separately provide the storage wiring 1 1 3 and configure the storage portion in an overlapping portion with the transparent electrode 10 10. When using such a pixel arrangement, as long as the arrangement of the exposure mask is changed, a TN-type liquid crystal display device can be manufactured with the same number of processes as in the conventional manufacturing process without reducing the numerical aperture. FIG. 18 shows a typical pixel arrangement of another TN type liquid crystal display of the present invention. This pixel configuration is equivalent to the aforementioned FIG. 15. In this pixel arrangement, as long as the arrangement of the exposure mask is changed, the TN-type liquid crystal display device can be manufactured with the same number of processes as the conventional manufacturing process without reducing the numerical aperture.

In addition, a representative configuration diagram of the pixel configuration of a conventional in-plane up-conversion (IPS) type liquid crystal display device is shown in FIG. 19, which is a pixel configuration equivalent to the aforementioned FIG. 7. In the pixel arrangement shown in FIG. 19, a thin film transistor provided with a polycrystalline silicon 1 002 gate 1 004 is arranged at the intersection of the gate wiring 1 0 6 and the data wiring 1 0 8 arranged in a lattice shape. The pixel electrode 1 1 1 4 is connected to the source of the thin film transistor through the contact hole 11 11 to control the voltage between the common electrode (counter electrode) 1 1 1 5 and the pixel electrode 1 1 1 4. The storage (capacitor) for maintaining this voltage is generally composed of storage wiring 1 1 1 3 arranged in parallel with the gate wiring 1 0 6 and storing electrodes 1 1 1 5. Representative configuration of the pixel configuration of the IPS-type liquid crystal display device of the present invention -32-575866 (28) Invention 讹 _Continued As shown in FIG. 20, it shows a pixel configuration equivalent to FIG. 10. It is possible to use a 2-pixel gate wiring 1 0 6 to centrally arrange the data wiring 1 0 8 at equal intervals to realize the centralized thin-film transistor configuration. At this time, it is also necessary to arrange the storage wiring 1 1 1 3 in parallel with the gate wiring 1 0 6 to constitute the storage section. When such a pixel arrangement is used, the IPS-type liquid crystal display device can be manufactured with the same number of processes as in the conventional manufacturing process without changing the numerical aperture, as long as the arrangement of the exposure mask is changed.

As described in the above embodiments, a liquid crystal display device can be easily manufactured using the present invention, and an organic EL display device can also be manufactured in the same manner.

In addition, in the above-mentioned embodiment, all the examples using single-gate thin film transistors are shown. However, the present invention is of course not limited to this. That is, even in a case where a so-called double-gate thin film transistor is used, a display device can be manufactured using the exact same pixel arrangement. At this time, although the area of the thin-film transistor is slightly increased, on the contrary, due to the advantages of suppression of shutdown leakage current and improvement of financial pressure, the manufacturing yield can be improved and it can be used in practice. More ideal on the product. In addition, in the pixel arrangement of the present invention, when the arrangement pitch of the gate driving circuit provided in the peripheral circuit portion (driving circuit portion) provided around the pixel region is also kept equal to the arrangement pitch of the thin film transistor of the pixel portion, that is, The method of the present invention can be used to simultaneously form a pixel portion and a peripheral circuit portion. That is, as shown in FIG. 21, when the laser irradiating portion 603 forming the pixel portion of the pixel 601 is extended to the gate driving circuit portion 1200 of the peripheral circuit portion, and the peripheral circuit is formed in the extended area, it can be greatly improved Productivity of active matrix substrate. When the gate driving circuit part 1200 is arranged in the extended area of the laser irradiation part 603, -33-(29) (29) 575866-that is, a thin film made of the broken film of the f4 of the present invention can be used to contain voltage Transformation, resistance to material 4, realization of electric day and sun body ^, · 4: change, shift register 'all kinds of open circuit, etc. The gate drives the electric switch, the protection part 1 2 0 0. When this configuration is adopted, the configuration pitch of the image is equal to the configuration pitch of the remote circuit section, which is too characteristic. This is the greatness of the present invention. [Sixth embodiment] The laser of this embodiment is also irradiated first. The pixel circuit can be formed and used by laser light. The same method is used to modify the day and day silicon silicon, and the silicon film circuit is used. The same thin film transistor as the pixel part is used to form the peripheral circuit.

Fig. 22 is a base view illustrating an active matrix of the sixth embodiment of the present invention. This embodiment is a double-and-twelfth embodiment. In the same manner, the pixel portion of the glass substrate # θ W Τ 儿 on the glass substrate is irradiated in a stripe shape along the X direction. The light is irradiated to form a region modified to be "Putian polycrystalline silicon film 702". In addition, the peripheral circuit portions 703 and 704 disposed around the pixel portion, and the peripheral circuit portions 704 and 704 are formed as areas irradiated with laser light by the method described in the first embodiment. In FIG. 22, the F P & time domain of the side circuit portion 703 is a peripheral circuit portion on the source side, and the peripheral circuit portion region is a peripheral circuit portion on the gate side. The four moxibustion methods use the same method as in the embodiment to form a thin ^^^^ electric body at the same time as the pixel circuit in the peripheral circuit. According to this embodiment, a driving integrated circuit (driver IC: LSI) for driving the display device in two summer locations can be greatly reduced. Taking the typical SXGA panel (1280 X 1024) of a large display device (large panel) as an example, the number of drivers for a 4 ^ φ port panel is about 14 ICs, but using this -34-575866

(30) In the case of the invention, it can be reduced to at least two, and in the better case, it can be reduced to zero. In addition, when a liquid crystal display device is manufactured by using this embodiment, in addition to reducing the driver 1C, the burden of the process caused by the installation of the 1C can also be reduced, so a good quality and cheap liquid crystal display can be provided. The reason why such an implementation form can be achieved is due to the result that the performance of the active matrix substrate obtained in this embodiment can meet the performance required to drive the peripheral circuits. [Seventh embodiment]

In this embodiment, the circuit formed by the modified silicon film is not limited to a general top-gate thin-film transistor circuit, and a bottom-gate thin-film transistor circuit can also be formed. When a single-channel circuit consisting of only N-channel MIS or P-channel MIS is required, from the viewpoint of simplifying the manufacturing process, it is sometimes preferable to use the bottom gate type. In the following, according to this embodiment, the case where the present invention is applied to a bottom-gate thin film transistor circuit will be described with reference to Figs.

Fig. 23 is a sectional view schematically illustrating the structure of a thin film transistor in an active matrix substrate according to a seventh embodiment of the present invention. In Fig. 23, a thin SiN film 802 and a SiO film 803 having a function as a barrier film are deposited on a glass substrate 801 by means of CVD or the like, and a gate electrode 804 having a specific shape is formed thereon. Then, a gate insulating film 805 is formed so as to cover the gate electrode 804. Next, an amorphous stone film having a thickness of about 100 nm was deposited by the CVD method. In forming an amorphous silicon film, in order to form an N-type MIS transistor, an N-type amorphous silicon film may be deposited by co-existing a specific amount of canned hydrogen and Shixi gas. Thereafter, only the gate electrode 806 is irradiated with laser light 'by the aforementioned laser light irradiation method to modify a portion to be formed into a pixel circuit into a polycrystalline silicon film. Then, -35-575866 (31) I. All rights reserved. Continuing the book, a N + layer having a thickness of about 20 nm was deposited on a silicon film by a CVD method that increased the amount of phosphine to form a laminated film. Then, dry etching is performed, so that the laminated film thus formed is formed into a specific shape at a specific position to form an island portion 806. A source / drain wiring 807 is formed on the formed island portion 806, and an N + layer other than the source and drain wiring portions is exposed by dry etching.

Next, an active matrix substrate in which a transistor circuit using a silicon film modified from an amorphous silicon film to a polycrystalline silicon film is formed by sequentially forming a passivation film 808 and a transparent electrode 809 is formed on a pixel. The outline of processing technology for such circuit formation and electrode formation is well-known technology, and it is also well-known technology that it is necessary to add processes such as activation annealing during the manufacturing process.

In the above manufacturing process, when a film is formed by CVD, since impurity carriers can be doped, expensive and complicated ion implantation can be omitted, which is extremely economical. In addition, a P-type MIS transistor can also be manufactured by using borane gas as a doping of the P-type carrier. Therefore, the use of the bottom gate type is an excellent method for economically providing a single-channel type semiconductor device. As shown in this embodiment, when a bottom-gate thin-film transistor is manufactured by the present invention, since the silicon film is irradiated with laser light through an insulating film on the gate wiring, a high-melting-point metal is preferably used as the gate wiring material. Therefore, a wiring material using tungsten (W) or molybdenum (Mo) as a main component becomes one of the features of the present invention. [Eighth Embodiment] Fig. 24 is an explanatory diagram of a configuration example of a further improvement of the laser light irradiation equipment for realizing the manufacturing method of the present invention. In the present invention, since the laser light is selectively irradiated to the silicon film of the pixel portion, and the modified -36-575866 (32) of the pixel portion is said to conceal _ the silicon film after the next page forms a pixel circuit, Therefore, increasing the number of laser beams and irradiating them with a parallel operation has become a factor for improving productivity. In order to achieve such parallelization of laser light irradiation, a more effective method is to arrange the laser light irradiation device shown in FIG. 3 in parallel. However, as described below, it is also extremely effective to divide the beam generated by the oscillation of one laser light source into a plurality of beams and emit them in parallel. Incidentally, in the parallel setting of the laser light irradiation device, when the number of the laser light irradiation devices is set to m, the irradiation time can be shortened to 1 / m compared with the case of using one. Most of the laser light segmentation is shown in Figure 24. A more effective method is to divide the laser beam 902 generated by the laser light source 901 oscillating inside the optical system 903 such as a homogenizer, and make the divided laser The beam passes through a plurality of light guide paths such as the optical fiber 904 and is introduced into a plurality of condenser lens systems 905 to form a plurality of irradiation light beams 906. Although this beam splitting and light guide formation technology itself belongs to the technology of optical technology, when this technology is used in the present invention, it can surprisingly shorten the time required for silicon film modification. Be emphasized. Assuming that the number of laser light divisions is η, the irradiation time can be shortened to about 1 / η compared with the case of one unit. In addition, when the laser beam is divided and used in parallel, the irradiation time can also be shortened to about 1 / nm, which can rapidly improve the productivity of this active matrix substrate, and is not limited to this active matrix substrate. When applied to the manufacture of various semiconductor devices, the productivity can be particularly improved. Fig. 25 is an external view showing an example of an electronic device using the display device of the present invention. This electronic device is a television. The display portion of the electronic device is equipped with a panel PNL having one of the foregoing embodiments, and the base portion is used to raise it 575866.

㈤ Come. The panel PNL is a liquid crystal display device, an organic EL display device, or other active matrix type display device. The base portion may be detachable. In addition, the present invention is not limited to the structures described in the scope of patent application and the structures described in the examples, and various changes can be made without departing from the technical idea of the present invention.

As described above, the present invention selects and effectively irradiates a laser beam on a silicon film of a pixel portion, and forms a pixel circuit on the modified silicon film to obtain an active matrix substrate. The display device is formed using this substrate, so Providing a high-performance display device at a significantly lower cost significantly improves its technical and economic effects. The foregoing has disclosed and described several embodiments according to the present invention. The above-mentioned embodiments can obviously be allowed to make appropriate changes and modifications without departing from the scope of the present invention. Therefore, the present invention should be covered by the attached patent application. All such changes and modifications within the scope shall not be bound by the above-mentioned detailed disclosure and description.

BRIEF DESCRIPTION OF THE DRAWINGS These and other features, objects, and advantages of the present invention can be more clearly understood from the description made with reference to the following drawings. Figs. 1A to 1C are cross-sectional views showing a pattern of steps of constituting an active matrix substrate of a first embodiment of a display device. Fig. 2 is a plan view for explaining a pattern of a laser light irradiation pattern for modification of a silicon film of an active matrix substrate of a first embodiment of a display device. Fig. 3 is a structural diagram showing a mode of a laser light irradiation device for modifying a silicon film of an active matrix substrate of a first embodiment of a display device. -38-575866 (34) Issue_speak_continued to buy · Fig. 4 is a flowchart showing the laser light irradiation operation steps for modifying the silicon film of the active matrix substrate of the first embodiment of the display device. Figs. 5A and 5B are three-dimensional explanatory diagrams showing laser light irradiation for modifying the silicon film of the active matrix substrate of the first embodiment of the display device. Figs. 6A and 6B are explanatory diagrams of the structures of the laser light irradiation section and the thin film transistor.

Fig. 7 is a plan view for explaining the relationship between the pixel portion of the active matrix substrate and the laser light irradiation area. Fig. 8 is a plan view for explaining the relationship between the pixel portion of the active matrix substrate and the laser light irradiation area of the first embodiment. Figs. 9A to 9C are cross-sectional views showing a pattern of steps of constituting an active matrix substrate of a third embodiment of a display device. Fig. 10 is a plan view illustrating an example of a pattern of a laser light irradiating portion of the fifth embodiment.

Fig. 11 is a plan view illustrating another example of the pattern of the laser light irradiation portion of the fifth embodiment. Fig. 12 is a plan view illustrating an example of a pattern of a laser light irradiation portion of the fifth embodiment. Fig. 13 is a plan view illustrating another example of the pattern of the laser light irradiation portion of the fifth embodiment. Fig. 14 is a plan view illustrating still another example of the pattern of the laser light irradiation portion of the fifth embodiment. Fig. 15 is a plan view illustrating another example of the laser light irradiation section of the fifth embodiment. -39-575866 (35) Talking about the continuation sheet Fig. 16 is a plan view illustrating the arrangement of the pixel portion of a conventional TN liquid crystal in comparison with the fifth embodiment. Fig. 17 is a plan view showing the arrangement of the pixel portion of the TN liquid crystal of the present invention as an example of the fifth embodiment. Fig. 18 is a plan view showing the arrangement of the pixel portion of the TN liquid crystal of the present invention as another example of the fifth embodiment.

Fig. 19 is a plan view illustrating the arrangement of a pixel portion of a conventional IPS liquid crystal for comparison with the fifth embodiment of the present invention. Fig. 20 is a plan view showing the arrangement of the pixel portion of the IPS liquid crystal of the present invention as an example of the fifth embodiment. Fig. 21 is a plan view illustrating a pattern example of a pixel portion and a laser light irradiating portion including a peripheral circuit portion of the fifth embodiment. 22 is a plan view illustrating an active matrix substrate of the sixth embodiment. Fig. 23 is a cross-sectional view illustrating a mode of a structure of a thin-film electric crystal of an active matrix substrate in a seventh embodiment.

Fig. 24 is an explanatory diagram of a configuration example of a further improvement of the laser light irradiation equipment for realizing the manufacturing method of the present invention. Fig. 25 is an external view of an example of an electronic device using the display device of the present invention. Figures 2 A and 2 B are explanatory diagrams of a crystallization method using scanning general excimer pulsed laser light. Figs. 27A and 27B are partial plan views of the laser light irradiating portion of Fig. 26 and plan views of essential portions for explaining a configuration example of the thin film transistor portion. 〈Explanation of Symbols of Drawings〉 -40-575866 (36) 101 Active matrix substrate 102, 502, 802 SiN film 103, 503, 803 SiO film 104, 302, 504, 701 Amorphous silicon film 105, 304, 702 Polycrystalline silicon Membrane 106 Gate (or gate wiring) 107, 507 Interlayer insulation film 108, 508, 807 Source / drain wiring 109, 509, 808 Passive film 110, 510, 809, 1010 Transparent electrode 201 Drive stage 202 Reference position measurement Camera 203 Reference position measurement signal 204 Control device 205 Drive device 206, 214 Control signal 207 Irradiation device 208 Laser beam 209 Laser light source 210, 903 Optical system 211 Reflector 212, 905 Condensing lens system 213 Power on and power off signal 301 , 501, 801 glass substrates issued?

-41-575866 (37) 303 linear excimer laser beam 401, 601 pixels 402 pixel circuit section 403, 603 laser light irradiation section 505 silicon film 5, 061, 006 gate wiring 602 circuit section 703, 704 peripheral circuit section 804 , 806, 1004, GT Gate 805 Gate insulation film 901 Laser light source 902 Laser beam 904 Optical fiber 906 Irradiation beam 1002 Polycrystalline silicon 1008 Data wiring 1110 Storage (capacitance) section 1111 Contact hole 1113 Storage wiring 1114 Pixel electrode 1115 Storage electrode 1200 Gate driver circuit part PNL panel SD1 source side say Lin reward -42-575866 (38) send_say_continued SD2 drain TRA transistor part PSI island part IC, LSI driver

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Claims (1)

575866 Patent application scope 1. An active matrix display device, characterized in that:-it includes a modified region that is modified by selectively irradiating laser light on a silicon film formed on an insulating substrate, and includes the modified region The active area has an active matrix substrate of an active circuit. 2 · The active matrix display device as in item 1 of the patent application, where The active circuit is a pixel circuit located in a display area of the active matrix substrate. 3. For example, the active matrix display device of the first patent application range, wherein the aforementioned active circuit is a driving circuit located in a peripheral area of the aforementioned active matrix substrate. 4. For example, the active matrix display device of the scope of patent application, wherein the aforementioned active circuit is formed by a bottom-gate thin film transistor. 5. The active matrix display device according to item 1 of the patent application range, wherein the aforementioned active circuit is a thin film transistor, and the gate of the thin film transistor is formed by using a wiring material mainly composed of tungsten or molybdenum. 6. For an active matrix display device according to item 2 of the patent application, wherein the arrangement pitch of the aforementioned pixel circuits is equal to the pixel pitch. 7. For an active matrix display device according to item 2 of the patent application, wherein the arrangement pitch of the aforementioned pixel circuits is equal to twice the pixel pitch. 8. The active matrix display device according to item 7 of the patent application, wherein the arrangement pitch of the aforementioned pixel circuits and the arrangement pitch of the peripheral circuits are equal. 9. A method for manufacturing an active matrix type display device, characterized in that: the method is for an active matrix type display device, and the active matrix 575866 application for a leftover vancouver type display device includes a pair formed on an insulating substrate The silicon film selectively irradiates laser light to the modified region and includes an active matrix substrate having an active circuit portion in the modified region; and the method is to centrally arrange the pixel circuit portion to the active portion. The matrix substrate is modified by selectively irradiating the laser light on the pixel circuit portion of the pixel circuit portion with a round-trip scan in the concentratedly arranged portion to form a pixel circuit on the modified silicon film. 10. For the method of manufacturing an active matrix display device according to item 9 of the patent application, wherein the silicon film of the pixel circuit portion is an amorphous silicon film formed by a CVD method, and the modified silicon film is polycrystalline silicon. Film person. 11. For example, a method for manufacturing an active matrix display device according to item 9 of the application, wherein the silicon film of the pixel circuit portion is a polycrystalline silicon film modified by an amorphous silicon film, and the modified silicon film is Polycrystalline silicon film after further modification. 12. For example, a method for manufacturing an active matrix display device according to item 9 of the application, wherein the silicon film of the aforementioned pixel circuit portion is a polycrystalline silicon film formed by a sputtering method, and the modified silicon film is a further modified Of polycrystalline silicon film. 13. For example, a method for manufacturing an active matrix display device according to item 9 of the application, wherein the silicon film of the aforementioned pixel circuit section is a polycrystalline silicon film formed by a CVD method, and the modified silicon film is a further modified film. Polycrystalline silicon film. 575866 Applying for a patent to apply for renewal R The manufacturing method of an active matrix display device according to item 9 of the scope of patent application, in which _ the above-mentioned active matrix substrate is used to form a stripe of the aforementioned area selectively irradiated with laser light. 15. The method for manufacturing an active matrix display device according to item 9 of the scope of patent application, wherein the silicon film formed on the aforementioned active matrix substrate is selectively irradiated with laser light on the silicon film of the pixel circuit portion by a round trip operation. Those who perform modification and form pixel circuits on the modified silicon film. 16. The method for manufacturing an active matrix display device according to item 9 of the patent application, wherein a solid laser having a wavelength of 400 nm to 2000 nm of the aforementioned laser light is used. 17. The manufacturing method of the active matrix display device according to item 9 of the patent application, wherein the laser generating the aforementioned laser light is an excimer laser. 18. The manufacturing method of the active matrix display device according to item 9 of the scope of patent application, wherein the irradiation width of the laser light scanning on the active matrix substrate is 20 / zm to 1 0 0 0 // m. 19. The method for manufacturing an active matrix display device according to item 18 of the scope of patent application, wherein the scanning speed of the laser light is from 1 mm / s to 1000 mm / s. 20. Manufacture of active matrix display device as claimed in item 18 of the scope of patent application 575866 A method in which the laser light scanned on the active matrix substrate is a plurality of laser lights obtained by dividing a single laser light, and the plurality of laser lights are used to scan in parallel. 2L The manufacturing method of the active matrix display device according to item 18 of the scope of patent application, in which Scanning the laser light on the aforementioned active matrix substrate is to scan most of the lasers in parallel so that most laser oscillators perform parallel operations.