CN1310199C - Active matrix type display device and method for manufacturing same - Google Patents
Active matrix type display device and method for manufacturing same Download PDFInfo
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- CN1310199C CN1310199C CNB031491553A CN03149155A CN1310199C CN 1310199 C CN1310199 C CN 1310199C CN B031491553 A CNB031491553 A CN B031491553A CN 03149155 A CN03149155 A CN 03149155A CN 1310199 C CN1310199 C CN 1310199C
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
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Abstract
A laser beam (208) is selectively directed to an amorphous silicon film (104) of a pixel portion on an active-matrix substrate (101) of a display device to modify the amorphous silicon film (104) into a polysilicon film (105). Pixel circuits such as thin film transistors are formed on the modified polysilicon film (105). Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
Description
Technical field
The present invention relates to display device, particularly the film quality with the semiconductor film that forms on the insulated substrate carries out modification with laser, constitutes the active matrix type display and the manufacture method thereof of active component with the semiconductor film of modification.In addition, sometimes display device is called display equipment below or abbreviates display as.
Background technology
Use active components such as thin film transistor (TFT), be widely used as the active matrix type display of the driving element of the pixel of arranged (or the display device of active array type type of drive, be also referred to as display equipment).As is known to the person skilled in the art, at present, this active matrix type display mostly by will use silicon fiml as a plurality of pixel circuit configuration of active components such as the formed thin film transistor (TFT) of semiconductor film formation on substrate, thereby can show high-quality image.Here, as above-mentioned active component, be that example illustrates with the thin film transistor (TFT) of its typical case.
But, as semiconductor film, in the thin film transistor (TFT) that has used the general so far amorphous silicon semiconductor film that uses (following also abbreviate the silicon semiconductor film as silicon fiml), limited on the performance of thin film transistor (TFT) that with its mobility is representative, need high speed, H.D circuit so be difficult to formation.With regard to realizing providing the required high mobility thin film transistor (TFT) of excellent images quality more, amorphous silicon film is modified as polysilicon film (crystallization) in advance, it is effective using the polysilicon film of crystallization to form thin film transistor (TFT).
In order to improve this modification (crystallization) and this crystallinity, use irradiation excimer laser (or laser beam, or abbreviate laser as) and amorphous silicon film is modified as the method for polysilicon film.Relevant such method has for example been carried out detailed argumentation in following non-patent literature 1～3 grade.
The method of modifying based on the crystallization of amorphous silicon film that uses excimer laser is described with Figure 26.Figure 26 is based on the key diagram of method for crystallising of the scanning of prevailing excimer laser irradiation, and Figure 26 A has represented to form the structure of the glass substrate of irradiated semiconductor layer, and Figure 26 B is illustrated in the state of modification under the laser radiation.This substrate uses glass or pottery, and the situation of glass substrate is used in explanation here.On glass substrate 301, pass through substrate film (SiN etc., not shown) the excimer laser bundle 303 of the wire that irradiating width is several mm to the hundreds of mm on the amorphous silicon film 302 piled up, as shown by arrows, by carrying out the scanning that each moves irradiation position to every several pulses to (x direction), the amorphous silicon film 302 of substrate 301 integral body is modified as polysilicon film 304 along folk prescription.By implementing various processing such as burn into wiring formation, ion injection on the polysilicon film of this method modification, be produced on the active-matrix substrate that each pixel portions has disposed the thin film transistor (TFT) that is used to drive.Use this substrate to make the display of the active matrix mode of LCD or organic EL etc.
Figure 27 is the major part planimetric map of the configuration example of the partial plan layout of laser irradiating part of explanation Figure 26 and thin film transistor (TFT).Shown in Figure 27 A, laser irradiating part makes silicon particle growth equably in the surface of a plurality of crystallizations of 0.05 μ m to 0.5 μ m.The crystal boundary of each silicon particle (being silicon crystal) is closed respectively.The part of surrounding with among Figure 27 A becomes the TRA of transistor portion of the semiconductor film of each thin film transistor (TFT).The modification of existing silicon fiml refers to such crystallization, is noted that the content of modification of the present invention is different.
When the silicon fiml 304 that utilizes above-mentioned modification forms image element circuit, shown in Figure 27 B, since with the part of the silicon of crystallization as transistor portion, so except part as the TRA of transistor portion of Figure 27 A, removing by corrosion does not need part, form the silicon fiml part of island, on the PSI of this island, dispose gate insulating film (not shown), grid, source S D1, drain electrode SD2, make the MIS transistor.Transistorized formation technology like this is as well known to those skilled in the art.In the prior art, owing on whole of pixel portions, implement to be used for the modification operation of crystallization, so the efficient of modification is poor.
[non-patent literature 1]
T.C.Angelis et al；Effect of Excimer Laser Annealing on the Structural andElectrical Properties of Polycrystalline Silicon Thin-Film Transistor，J.Appl.Phy.，Vol.86，pp4600-4606，1999。
[non-patent literature 2]
H.Kuriyama et al；Lateral Grain Growth of Poly-Si Films with a SpecificOrientation by an Eximer Laser Annealing Method，Jpn.J.Appl.Phy.，Vol.32，pp6190-6195，1993。
[non-patent literature 3]
K.Suzuki et al；Correlation between Power Density Fluntuation and GrainSize Distribution of Laser annealed Poly-Crystalline Sillcon，SPIE Conference，Vol.3618，pp310-319，1999。
In above-mentioned prior art, although have the silicon fiml that can on substrate, form modification, the advantage of the active-matrix substrate of well behaved thin film transistor (TFT) has been disposed in manufacturing, but the expense that is used for silicon fiml is carried out modification becomes big, and existence can not make full use of the problem of above-mentioned advantage.Such problem is except needs use expensive excimer laser device, because intensity, the recurrent interval deficiency of excimer laser pulse are used for the silicon fiml on the whole surface of substrate is carried out the problem that the needed time of modification also increases so also produce.
This problem is obtaining to be used to constitute the substrate of large-scale display device by many-side, thereby becomes very remarkable when providing display equipment at an easy rate.Substrate size is being maximized and carrying out under the silicon film modified situation, because equipment is very expensive and be difficult to obtain high productivity, so such problem can not solve eventually.Therefore, even large-sized substrate also very need provide and can and realize silicon film modified new technology expeditiously with the low cost equipment high speed.
Summary of the invention
First purpose of the present invention of having considered above-mentioned problem is, display device is provided economically, and this device is included in the active-matrix substrate that has high performance thin-film transistor circuit in the pixel portions of rectangular configuration.And second purpose of the present invention is, is provided for solving the concrete manufacturing technology of above-mentioned problem.Have again, the invention is not restricted to the modification of the semiconductor film that on the glass substrate that is used for display device etc., forms, can be applicable to other substrates equally, the modification of the semiconductor film that for example on silicon wafer, forms etc.
For this reason, the invention provides a kind of active matrix type display, it is characterized in that: comprise active-matrix substrate, this active-matrix substrate have to the silicon fiml that on insulated substrate, forms optionally irradiating laser and modification modification area, in this modification area, be provided with active circuit
The described active circuit that is provided with in described modification area comprises: the image element circuit that forms in the viewing area of described active-matrix substrate and be formed on the driving circuit of the periphery of described viewing area accordingly with each row image element circuit of arranging along the first direction of this viewing area
A plurality of by each described image element circuit of row with every pair of adjacent group in the group that constitutes of driving circuit of correspondence is close mutually on the second direction of intersecting with described first direction with it;
Each to described group of constituting by the row of described image element circuit and driving circuit to 2 times of the spacing of the pixel that equals at the arrangement pitches on the described second direction in described viewing area to arrange along this second direction.
The present invention also provides a kind of manufacture method of active matrix type display, this active matrix type display comprises active-matrix substrate, this active-matrix substrate has to the silicon fiml that forms on the insulated substrate irradiating laser modification area that carries out modification optionally, in this modification area, be formed with in the viewing area of this insulated substrate along first direction and with the image element circuit portion separately of a plurality of pixels of its second direction of intersecting configuration, it is characterized in that:
In described viewing area, in the pixel groups that constitutes at the described pixel of arranging along described first direction, on described second direction adjacent each to pixel groups, to belong to the first group of described image element circuit portion of the side in the above-mentioned a pair of pixel groups along the configuration of the opposed mode of described second direction concentrated area and to belong to the described image element circuit of second group of the opposing party in above-mentioned a pair of pixel groups portion;
The each several part of the described image element circuit of first group of the centralized configuration of described silicon fiml and second group portion is carried out the shuttle-scanning of laser respectively, to this each several part of this silicon fiml irradiating laser and carry out modification optionally;
In modification silicon fiml on form image element circuit.
As the means that are used to solve above-mentioned problem, the present invention is to the silicon fiml of pixel portions illuminating laser beam (below be also referred to as laser) optionally, forms image element circuit on the silicon fiml of the modification of this pixel portions.This image element circuit is mainly thin film transistor (TFT).In addition, in the manufacturing of active matrix type display of the present invention, preferably use reciprocating action, on the silicon fiml after the modification of this pixel portions, form image element circuit to the silicon fiml of pixel portions irradiating laser optionally.And best centralized configuration image element circuit portion, on this concentrated part, use reciprocating action, to the silicon fiml of pixel portions irradiating laser optionally, on the silicon fiml after the modification of this pixel portions, form image element circuit.
The modification of the modification of silicon fiml of the present invention and the silicon fiml of prior art, its content is different, the following describes difference.That is, in the modification of silicon fiml of the present invention, by modification, it is that 0.1 μ m to 10 μ m, length are the aggregate of the monocrystalline about 1 μ m to 100 μ m that the silicon fiml of crystallization becomes width, can guarantee good carrier mobility.This is worth as electron mobility greatly about 300cm
2More than/the Vs, be desirably in 500cm
2More than/the Vs.
On the other hand, in the modification of the silicon fiml that has used existing excimer laser, the most of crystalline particles about 0.05 μ m to 0.5 μ m are grown equably.As electron mobility, can obtain about 100cm
2/ Vs is following, average out to 50cm
2Silicon fiml about/Vs.If the modification of so existing silicon fiml and the 1cm of amorphous silicon film
2The following electron mobility of/Vs is compared, and can improve performance, but have the advantage of the silicon fiml of the use modification better than existing modification in the present invention, is noted that the modification of modification of the present invention and prior art is different.
Constituting the silicon fiml of the pixel portions that has on the active-matrix substrate of display device of the present invention, is the amorphous silicon film (amorphous silicon film) that forms with the CVD method, the silicon fiml of the modification of pixel portions be polysilicon film more preferably.But, the invention is not restricted to this, the silicon fiml of this pixel portions is the polysilicon film after the amorphous silicon film modification, also can be the silicon fiml polysilicon film of modification once more after the modification of pixel portions.Here said ' polysilicon film of modification ' refers to that amorphous silicon is changed to the silicon fiml of crystallization, and the crystal boundary of each crystallization is essentially closed state.And ' polysilicon film of modification once more ' refers to that its crystal boundary is varied to the state of the crystal boundary that has continuous crystal structure on prescribed direction.
And among the present invention, the silicon fiml of this pixel portions is the polysilicon film that forms by sputtering method, and the silicon fiml of the modification of pixel portions also can be the polysilicon film of modification once more.And the silicon fiml of this pixel portions is the polysilicon film that forms with the CVD method, and the silicon fiml of the modification of pixel portions also can be the such combination of polysilicon film of modification once more.
In the present invention, optionally on the silicon fiml with the pixel portions of laser radiation to the substrate, so the zone of elective irradiation, be that the silicon area of modification has the feature that forms along the substrate surface ribbon.By adopting such shape on one's own initiative, in the process that forms thin film transistor (TFT), in the zone beyond the pixel portions of removing by corrosion, needn't irradiating laser, can reduce useless operation significantly.
The laser that uses among the present invention be oscillation wavelength 400nm to 2000nm the continuous oscillation Solid State Laser more preferably.Continuous oscillation laser is for the noncrystalline or polysilicon membrane of annealing object, from certain wavelength of absorbing, be ultraviolet wavelength, expectation is for visible wavelength, more particularly, can adopt Ar laser or Kr laser with and second higher harmonics, Nd:YAG laser, Nd:YVO
4Second higher harmonics of laser, Nd:YLE laser and the 3rd higher harmonics etc.Wherein, consider the big or small and stable of output, preferably second higher harmonics (wavelength 532nm) or the Nd:YVO of LD (laser diode) excitation Nd:YAG laser
4Second higher harmonics of laser (wavelength 532nm).But the upper and lower bound of this optical maser wavelength produces the scope of light absorption of silicon fiml and economy and obtains stable LASER Light Source and determine from taking into account high-level efficiency.
Solid State Laser of the present invention can stably be supplied with the laser that is absorbed by silicon fiml, has the little feature of financial burden of distinctive gas exchange operation of gas laser and sending part deterioration etc., is suitable as the means of silicon fiml being carried out the economy modification.Wherein, in the present invention, this laser is not initiatively got rid of the excimer laser of wavelength 150nm to 400nm.
In the present invention, laser is carried out the optics adjustment, after making the space distribution homogenising of intensity, expectation uses lens combination to carry out focus irradiation, and, in order to adjust the crystallinity of silicon fiml after the modification, after being carried out optical forming and chopping, continuous oscillation laser shines better.Select the scope of pulse width expectation more than 100ns, below the 1ms of laser in this case.
In the present invention, the irradiating width when substrate illumination strip shape laser be 20 μ m to 1000 μ m width more preferably.Such width is to think over the width of determining after the economy from the required peak width of pixel portions circuit with ratio two aspects that this width occupies pel spacing.The length of irradiation portion is to have thought over the length of determining after the size of substrate size, pixel region.In the present invention, also can carry out laser radiation off and on, in this case, also not lose effect of the present invention with the scan-synchronized that drives platform.
In the present invention, it is characterized in that this laser radiation scans with the speed of 1mm/s to 1000mm/s.The lower limit of such sweep velocity is taken into account the required time is scanned and financial burden is determined in the regulation zone in the substrate, and the upper limit is scanned the capabilities limits of required plant equipment.
In the present invention, it is characterized in that this laser radiation scans by the light beam with optical system pack laser, at this moment, also can use single laser pack is the optical system of single light beam.Wherein, by single laser is divided into a plurality of the irradiation, shine under can scanning simultaneously at the row of a plurality of pixel portions, so laser radiation efficient significantly improves.It is optimal way of the present invention that laser is divided into a plurality of the irradiation.Such laser scanning methods is particularly suitable for handling at short notice the situation of large-size substrate.
In addition, in the present invention, when a plurality of laser oscillator concurrent workings were shone in this laser radiation, the efficient of laser radiation significantly improved.Such mode is particularly suitable for handling at short notice the situation of large-size substrate.
And in the present invention, the laser radiation zone of selective scanning does not stop at image element circuit portion, can form peripheral circuit portion yet.The performance of the thin film transistor (TFT) that forms in image element circuit portion satisfies under the needed performance situation of peripheral circuit, recommends the selection of laser radiation to the formation zone of peripheral circuit.In this case, can reduce the number of drive circuit chip required in the driving of display (LSI driver, driver IC) significantly, so economic effect is very big.
And the circuit that the silicon fiml of modification forms among the present invention is not limited to common top gate type thin film transistor circuit, also can form the bottom gate thin film transistor circuit.Only under the situation of the single P-channel circuit that needs N raceway groove MIS or P raceway groove MIS, with regard to the simplification of manufacturing process, preferably bottom gate type.Under these circumstances, silicon fiml by dielectric film on grid wiring carries out modification with laser radiation, so preferably adopting refractory metal aspect the grid wiring material, using with tungsten (W) or molybdenum (Mo) becomes one of feature of the present invention as the grid wiring material of principal ingredient.
By using above-described method of the present invention to make,, can obtain the active-matrix substrate that the disposition interval of image element circuit equates with pel spacing as the result who improves laser radiation efficient significantly.
But, after the configuration of image element circuit worked hard,, can improve the efficient of laser radiation significantly as obvious effects.In the configuration of improved like this image element circuit, circuit part centralized configuration by the 2 row pixels that will uniformly-spaced dispose is at the middle body of row, only in the pixel region of such centralized configuration optionally irradiating laser come silicon fiml is carried out modification, laser radiation efficient approximately can be brought up to 2 times.In such the present invention, the disposition interval with image element circuit equals 2 times feature of pel spacing.
The active-matrix substrate of the semiconductor construction with image element circuit or peripheral circuit of the application of the invention can provide good liquid crystal indicator.In addition, the active-matrix substrate of the application of the invention also can provide the organic EL display of excellent picture quality at an easy rate.And, be not limited to liquid crystal indicator, organic EL display among the present invention, also can be applied in image element circuit and peripheral circuit, have the active matrix type display of other modes of same semiconductor construction.
Description of drawings
By the description of carrying out below in conjunction with accompanying drawing, above-mentioned and other features of the present invention, purpose and advantage will become apparent, wherein:
Fig. 1 is the sectional view of formation step of active-matrix substrate of schematically representing the 1st embodiment of display device;
Fig. 2 schematically illustrates the planimetric map that is used for the silicon fiml of the active-matrix substrate of the 1st embodiment of display device is carried out the laser radiation figure of modification;
Fig. 3 is the schematic configuration diagram that is used for the silicon fiml of the active-matrix substrate of the 1st embodiment of display device is carried out the laser irradiation device of modification;
Fig. 4 is the process flow diagram that explanation is used for the silicon fiml of the active-matrix substrate of the 1st embodiment of display device is carried out the laser radiation job step of modification;
Fig. 5 is used for the perspective illustration that the silicon fiml to the active-matrix substrate of the 1st embodiment of display device carries out the laser radiation of modification;
Fig. 6 is the key diagram that the structure of the irradiation portion of laser and thin film transistor (TFT) schematically is described;
Fig. 7 is the planimetric map of the relation in explanation pixel portions of active-matrix substrate and laser radiation zone;
Fig. 8 is the planimetric map of the relation in the pixel portions of active-matrix substrate of explanation the 1st embodiment and laser radiation zone;
Fig. 9 is the sectional view of formation step of active-matrix substrate of schematically representing the 3rd embodiment of display device;
Figure 10 is the planimetric map of a figure example of the laser irradiating part of explanation the 5th embodiment;
Figure 11 is the planimetric map of another figure example of the laser irradiating part of explanation the 5th embodiment;
Figure 12 is the planimetric map of a figure example of the laser irradiating part of explanation the 5th embodiment;
Figure 13 is the planimetric map of another figure example of the laser irradiating part of explanation the 5th embodiment;
Figure 14 is the planimetric map of another figure example of the laser irradiating part of explanation the 5th embodiment;
Figure 15 is the planimetric map of another figure example of the laser irradiating part of explanation the 5th embodiment;
Figure 16 is the planimetric map that the pixel portions layout of the existing TN liquid crystal of comparing with the 5th embodiment is described;
Figure 17 represents the 5th embodiment one example, is the planimetric map of the pixel portions layout of explanation TN liquid crystal of the present invention;
Figure 18 represents another example of the 5th embodiment, is the planimetric map of the pixel portions layout of explanation TN liquid crystal of the present invention;
Figure 19 is the planimetric map of the pixel portions layout of explanation and the 5th embodiment existing IPS liquid crystal relatively;
Figure 20 represents the example of the 5th embodiment, is the planimetric map of the pixel portions layout of explanation IPS liquid crystal of the present invention;
Figure 21 is the planimetric map of figure example of the laser irradiating part that comprises pixel portions and peripheral circuit portion of explanation the 5th embodiment;
Figure 22 is the planimetric map of the active-matrix substrate of explanation the 6th embodiment;
Figure 23 is the sectional view that the thin film transistor (TFT) structure that has in the active-matrix substrate of the 7th embodiment schematically is described;
Figure 24 is the key diagram of further improved structure example that is used to realize the laser irradiating device of manufacture method of the present invention;
Figure 25 is the outside drawing that e-machine one example of display device of the present invention is used in expression;
Figure 26 is the general key diagram that carries out the method for crystallising of excimer laser irradiation;
Figure 27 is the major part planimetric map of the configuration example of the partial plan layout of laser irradiating part of explanation Figure 26 and thin film transistor (TFT) portion.
Embodiment
Below, describe embodiments of the invention in detail with reference to accompanying drawing.
At first, with reference to Fig. 1～Fig. 7 summary of the present invention is described.These the description of the drawings also have with embodiment described later in the part that repeats of the record of embodiment.At first, on the substrate (hereinafter referred to as glass substrate) 101 of the glass of making, pile up SiN film 102 and SiO film 103 thinly by means such as CVD, according to the CVD method amorphous silicon film 104 is accumulated to thickness (Figure 1A) about 50nm thereon with barrier film function.The thickness etc. that is noted that layer structure, thickness and the silicon fiml of above-mentioned barrier film only is an example, and this record is not restriction record of the present invention.Then, only shine pixel portions, the silicon fiml of the part that form image element circuit is carried out modification (Figure 1B) by laser irradiation of the present invention.
Fig. 2 schematically represents the plane of the illuminated portion in the aforesaid substrate.In the present invention, illustrate and the silicon fiml 105 of modification can be formed parallel ribbon on the direction of regulation.Fig. 3 represents to be used to implement an example of the device of such laser radiation.The glass substrate 101 of having piled up amorphous silicon film 104 of the present invention is arranged on the driving platform 201 that the XY direction moves, uses the reference position to measure gamma camera 202 and carry out position alignment.The reference position measured signal 203 of measuring gamma camera 202 from the reference position is imported into control device 204.
Driving arrangement 205 is according to carrying out the inching of irradiation position from the control signal 206 of control device 204 inputs, and speed in accordance with regulations moves and drives platform 201, and glass substrate is carried out folk prescription to scanning.With this scan-synchronized, will shine amorphous silicon film 104 from the laser 208 of irradiation apparatus 207, this silicon fiml 104 is modified as polysilicon film 105.
By optical system 210, catoptron 211, condensing lens systems 212 such as configuration LASER Light Source 209, homogenizer in irradiation apparatus 207, can form the illumination beam of expectation.The irradiation time of laser, irradiation speed etc. are adjusted by enablement and disablement (following is ON-OFF) signal 213, control signal 214 from control device 204.Fig. 4 illustrates such irradiation sequence with process flow diagram.Emphasize in the present invention by making a plurality of irradiation apparatus 207 concurrent workings carry out above-mentioned scanning concurrently, thereby can improve irradiation speed significantly.
In the present invention, preferably use following illuminating method: with above-mentioned action on one side folk prescription to (x direction) scanning on one side behind the irradiated substrate upper surface, with the relative position of irradiation apparatus 207 and glass substrate to mobile slightly to the other direction that intersects (y direction) with above-mentioned folk prescription, reciprocating action is carried out in scanning irradiation on one side in reverse direction on one side.This reciprocating action can effectively utilize the sweep time that drives platform in irradiation, reduce the effect that is used to shine all the needed times of pixel portions on the glass substrate significantly so have.
Fig. 5 represents laser radiation of the present invention in more detail.In the present invention, on the glass substrate shown in Fig. 5 A 101, on the amorphous silicon film 104 that clips substrate film (not shown) formation, the laser 208 of irradiation optically focused scans irradiation portion along the x direction simultaneously shown in Fig. 5 B.Its result can form shaped like narrow (ribbon) with the silicon fiml 105 of modification.Fig. 6 is a key diagram of schematically representing the structure of laser irradiating part of the present invention and thin film transistor (TFT), and its figure A represents the planimetric map of laser irradiating part, and its figure B represents the planimetric map of the structure of thin film transistor (TFT).
As shown in Figure 6A, by with laser scanning and shine amorphous silicon film 104 on the glass substrate 101, the silicon of crystallization is grown along the direction of scanning (the x direction of this figure) of laser bandedly in this laser irradiating part.At the growth district of the silicon of this crystallization, be to form the TRA of transistor portion shown in the dotted line in the zone of silicon fiml.
The modification of silicon fiml of the present invention refers to such crystallization, and the part of crystallization is that above-mentioned band widish is that 0.1 μ m to 10 μ m, length are the monocrystalline aggregate about 1 μ m to 100 μ m.Form image element circuit by the silicon fiml 105 that uses such modification, can improve the efficient of modification significantly.Specifically, for with the part of the silicon fiml of crystallization as the TRA of transistor portion shown in Fig. 6 A, remove unwanted part by corrosion, the island PSI of the silicon fiml of formation shown in Fig. 6 B, on the PSI of this island, dispose gate insulating film (not shown), grid G T, source S D1, drain electrode SD2, make the MIS transistor.Have, so transistorized formation technology is conventionally known to one of skill in the art again.In addition, the light spot form of the laser radiation on the glass substrate also can form shapes such as ellipse, rectangle, rectangle except forming circle.Such shape is with the adjustable scope of optical system.
In the present invention, the silicon fiml 105 of above-mentioned such modification that forms is corroded into the circuit of regulation shown in Fig. 1 C, form the transparency electrode 110 of gate insulating film (not shown), grid (or grid wiring) 106, interlayer dielectric 107, source/leak routing 108, passivating film 109, formation pixel electrode successively.Thus, can be formed on the active-matrix substrate of the transistor circuit that has disposed the silicon fiml 105 that uses modification in the pixel.The details of required process technology is conventionally known to one of skill in the art in the formation of this transistor circuit and electrode.In addition, to inject, activate operations such as annealing also be known at the ion that must append of operation midway.
Fig. 7 is the planimetric map of the relation in explanation pixel portions of active-matrix substrate of the present invention and laser radiation zone.Fig. 7 is not necessarily corresponding with physical size, schematically the relation of remarked pixel 401 and image element circuit portion 402 and laser irradiating part 403.In the present invention, the area of laser irradiating part 403 can be about 1/2 to 1/5 of pixel portions entire area.
Below, explain embodiments of the present invention with reference to the accompanying drawing of embodiment.
[the 1st embodiment]
With reference to Fig. 1～Fig. 5 and Fig. 8 the 1st embodiment of the present invention is described.Fig. 1 is the sectional view of formation step of active-matrix substrate of schematically representing the 1st embodiment of display device of the present invention, Fig. 2 schematically illustrates the planimetric map that is used for the silicon fiml of the active-matrix substrate of the 1st embodiment of display device of the present invention is carried out the laser radiation figure of modification, Fig. 3 is the schematic configuration diagram that is used for the silicon fiml of the active-matrix substrate of the 1st embodiment of display device of the present invention is carried out the laser irradiation device of modification, Fig. 4 is the process flow diagram that explanation is used for the silicon fiml of the active-matrix substrate of the 1st embodiment of display device of the present invention is carried out the laser radiation job step of modification, and Fig. 5 is used for the perspective illustration that the silicon fiml to the active-matrix substrate of the 1st embodiment of display device of the present invention carries out the laser radiation of modification.And Fig. 8 is the planimetric map of the relation in the pixel portions of active-matrix substrate of explanation the present invention the 1st embodiment and laser radiation zone.
At first, shown in Figure 1A, prepare thickness and be about 0.3mm to 1.0mm, be preferably in 400 ℃ to 600 ℃ the thermal treatment distortion and shrink little stable on heating glass substrate 101.On this glass substrate 101, pile up continuously and equably the SiN film 102 of the about 50nm of thickness of barrier film function and the SiO film 103 of the about 50nm of thickness, on this barrier film, press the amorphous silicon film 104 of the about 50nm of CVD method ulking thickness with chemical by the CVD method.With regard to the stacking method of the barrier film that uses such CVD method and amorphous silicon film, for conventionally known to one of skill in the art.Then, only shine pixel portions by laser irradiation of the present invention, the silicon fiml that will form the part of image element circuit is modified as polysilicon film 105 by laser radiation from amorphous silicon film.
Figure 1B is the sectional view that expression is modified as the amorphous silicon film of required part by laser radiation the state of polysilicon film.As the device that is used to implement the laser radiation shown in Figure 1B, can use device shown in Figure 3.The summary of the laser radiation of relevant this irradiation unit of use, repeat with the explanation of above-mentioned solution part, but in the present embodiment, the glass substrate 101 of having piled up amorphous silicon film 104 is set on the driving platform 201 of x-y direction, uses the reference position to measure gamma camera 202 and carries out position alignment.Reference position measured signal 203 is imported into control device 204, carries out the inching of irradiation position according to the control signal 206 that is input to driving arrangement 205, and speed in accordance with regulations moves driving platform 201, scans to (the x direction of Fig. 1) along folk prescription.With this scan-synchronized, will shine on the amorphous silicon film 104 from the laser 208 of irradiation apparatus 207, silicon fiml is carried out modification.
As mentioned above, as an example, optical system 210, catoptron 211, condensing lens systems 212 such as the LASER Light Source 209 of the 1W that second higher harmonics (wavelength 532nm) of the Nd:YVO4 laser by configuration LD (laser diode) excitation in irradiation apparatus 207 constitutes, homogenizer can form the illumination beam of expectation.The irradiation time of laser, exposure intensity etc. are used for adjusting from ON-OFF signal 213, the control signal 204 of controlling device 204.
Fig. 4 is the process flow diagram that the laser shot sequence of the irradiation apparatus that uses Fig. 3 is described.In the present embodiment, laser is carried out optical adjustment, after its Strength Space is evenly distributed, preferably use lens combination to carry out focus irradiation.And, for the crystallinity of the silicon fiml of adjusting modification, preferably continuous oscillation laser is carried out shining after optical forming and the chopping again.The pulse width of the laser under the situation is preferably selected in the scope more than the 100ns, below the 1ms like this, and for example, as the only condition of the particle diameter that is used to obtain 5 μ m, pulse width is chosen as 10 μ s.
In Fig. 2, schematically represent illuminated portion in the substrate, represent that in the present embodiment the silicon fiml 105 of modification can form on ribbon ground in the planimetric map mode.The illumination beam diameter of laser need be bigger than the width of the circuit region of pixel portions, so as an example, select 30 μ m.
In the present embodiment, as shown in Figure 8, with above-mentioned action to upper surface of base plate after x direction (A direction=described folk prescription to) irradiation, preferably use following method: to the y direction move slightly the back along the opposite direction (B direction) of above-mentioned x direction on one side the real estate in the reciprocating action that a scan edge shines shine two-dimensionally.As an example of sweep velocity, select 300m/s.By repeating this reciprocating action, can be the second best in quality polysilicon film with the silicon film modified of all pixel portions.The polysilicon film of modification becomes crystal habit, along the crystal region of the direction of illumination of laser as shown in Figure 6, has asymmetricly folk prescription to the feature of growth.
The silicon fiml 105 of the modification of above-mentioned formation is carried out corrosion treatment form the allocated circuit shown in Fig. 1 C, by forming gate insulating film (not shown), grid (the grid G T of Fig. 6 B) 106, interlayer dielectric 107, source/leak routing 108, passivating film 109 successively, constitute the transparency electrode 110 of pixel electrode, formation will use the transistor circuit of the silicon fiml 105 of modification to be configured in active-matrix substrate in the image element circuit.
In the formation of such transistor circuit, preferably make the electronics of gate portion or the moving direction and the parallel consistent configuration of the direction of growth of crystallization in hole.Parallelly consistently be meant that the angle with respect to the crystalline growth direction of polysilicon film is 0 degree or 180 degree.In tolerance on this angle is in about 30 degree.Its reason is shown in table 1.
[table 1]
| Direction (degree) | Electron mobility (cm 2/V·s) |
| 0 | 520 |
| 30 | 500 |
| 60 | 260 |
| 90 | 150 |
| 120 | 220 |
| 150 | 510 |
| 180 | 580 |
The direction of scanning (angle: spend) and the electron mobility (cm of direction that table 1 expression checking electronics moves and laser radiation
2/ Vs) the result of relation.As shown in table 1, the angle (absolute value) that forms by the crystalline growth direction of the direction of scanning of laser radiation definition and the pass of electron mobility tie up to respect under the deviation situation below about 30 degree of 0 degree or 180 degree, can guarantee about 300cm fully
2More than/the Vs.On the contrary, if spend above 30 with the error of above-mentioned crystalline growth direction, then electron mobility descends, and electron mobility descends to heavens when the direction (90 degree) at right angle as can be known.Present embodiment just is being based on this discovery.This situation in other embodiment described later too.
The advantage of such configuration is that present embodiment (integral body of the present invention that also comprises other embodiment described later) produces from the reciprocating action of allowing laser radiation.When the layout of image element circuit is identical, in the image element circuit portion (scanner section of the B direction of Fig. 8) that forms in image element circuit portion that in the laser irradiating part 403 that forms by the outlet, forms (scanner section of the A direction of Fig. 8) and the laser irradiating part 403 that forms by the loop, on the direction of growth of the moving direction of charge carrier and crystallization, produce the deviations of 0 degree or 180 degree.In the present invention who comprises present embodiment, find that such deviation influences transistor characteristic hardly, so can allow 0 degree or 180 these two kinds of configurations of degree.According to so non-obvious result, should emphasize and back and forth to shine.
By the configuration of above-mentioned like that positive crystallization direction, can reduce the probability of charge carrier crosscut crystal grain boundary, the crystal boundary characteristic degradation that causes at random can be suppressed to Min., can obtain best transistor circuit.The details that this transistor circuit and electrode form required process technology is as well known to those skilled in the art.And operation need midway append ion to inject, activate operations such as annealing also be known.
By such method, can in pixel portions, dispose the thin-film transistor circuit that has used the polysilicon semiconductor film.For example when making N raceway groove MIS transistor, the field effect mobility is at about 300cm for the performance of the thin film transistor (TFT) that obtains in the present embodiment
2More than/the Vs, and the deviation of threshold voltage can be suppressed to ± below the 0.2V, can high-performance, the work of high-reliability ground, can make the display device of the good active-matrix substrate of the homogeneity used between device.
In addition, in the present embodiment, inject by the boron of giving holoe carrier and to replace the phosphonium ion of giving electronic carrier and inject, can also make P raceway groove MIS transistor, replace the photomask configuration, N type and P type are formed on the same substrate, can form so-called CMOS type circuit.In cmos circuit, can expect to improve frequency characteristic, be suitable for high speed operation.On the contrary, the increase of counting the manufacturing process that increase causes because of mask becomes disadvantageous main cause.The details of such semiconductor fabrication and semi-conductor electricity road technique is as well known to those skilled in the art, constitute which type of semiconductor devices, behind the cost that has thought over characteristic necessary in the display device and be used to make, can obtain only device.
The technical method that the active-matrix substrate of use present embodiment is made liquid crystal indicator is as well known to those skilled in the art.Specifically, by on active-matrix substrate, forming the liquid crystal aligning rete, give orientation limitations power to it by methods such as grindings, after the periphery of pixel portions forms sealant, gap arranged opposite has in accordance with regulations formed the filter substrate of orientation rete equally, in this gap, enclose liquid crystal, the inclosure mouth of sealant is sealed with encapsulant form liquid crystal cells.
Then, form LCD MODULE by periphery encapsulation lift-launch gate drivers LSI and source electrode driver LSI at this liquid crystal cells.By on this LCD MODULE, encapsulating polarization plates, light guide plate, backlight etc., can make liquid crystal indicator.
Used the liquid crystal indicator of the active-matrix substrate of present embodiment, by the above-mentioned good polycrystalline SiTFT circuit of configuration in its image element circuit, current driving ability is good, so be suitable for high speed operation.And, because the deviation of threshold voltage is little, so have the advantage that the liquid crystal indicator that image quality has good uniformity can be provided at an easy rate.
In addition, the organic EL technical method that uses the active-matrix substrate of present embodiment to make organic EL display is as well known to those skilled in the art.Specifically, be formed for embankment (bank) figure that organic EL separates on active-matrix substrate, evaporation hole transporting layer, luminescent layer, electron supplying layer, cathodic metal layer wait and constitute laminate successively from the transparency electrode surface.Around the pixel portions of the substrate that has formed such laminated layer, dispose encapsulant, in sealable tank, seal.Organic EL of such Sealing Technology protection pixel portions is not subjected to moisture effects.Protecting organic EL not to be subjected to moisture effects is that the inhibition deterioration of image quality is necessary, is recommended in drying agent is set in the sealable tank.
In the driven with active matrix of organic EL display, because organic EL is the current drives illumination mode,, must adopt high performance image element circuit so just provide high-quality image, cmos type image element circuit is used in special expectation.The active-matrix substrate of present embodiment is suitable as the high performance active-matrix substrate that satisfies such requirement, the organic EL display that should also be noted that the active-matrix substrate that has used present embodiment is one of display device of bringing into play to greatest extent the present embodiment advantage.
[the 2nd embodiment]
In the present embodiment, the silicon fiml that carries out the modification object as irradiating laser is not limited to amorphous silicon film, can be the polysilicon film by the amorphous silicon film modification, also can be with the silicon fiml of the modification of the pixel portions polysilicon film of modification once more.And the silicon fiml of its pixel portions of present embodiment is the polysilicon film that forms with sputtering method, and the silicon fiml of the modification of pixel portions also can be the polysilicon film of modification once more.And the silicon fiml of this pixel portions is the polysilicon film that forms with the CVD method, and the silicon fiml of the modification of pixel portions also can be the such film capable of being combined of the polysilicon film of modification once more.Below with reference to above-mentioned each figure different with above-mentioned the 1st embodiment embodiments of the present invention that silicon fiml is carried out modification are described.
Same with the 1st embodiment, prepare thickness and be about 0.3mm to 1.0mm, be preferably in 400 ℃ to 600 ℃ the thermal treatment distortion and shrink little stable on heating glass substrate 101.On this glass substrate, pile up continuously and equably the SiN film 102 of the about 50nm of thickness of barrier film function and the SiO film 103 of the about 50nm of thickness, on this barrier film, press the amorphous silicon film 104 (with reference to Figure 1A) of the about 50nm of CVD method ulking thickness with chemical by the CVD method.
For this amorphous silicon film, also the method for crystallising that the excimer laser irradiation is scanned is described with reference to above-mentioned Figure 26.Shown in Figure 26 A, excimer laser bundle 303 in the wire that is several mm to the hundreds of mm to amorphous silicon film 302 irradiating widths of piling up by substrate film (not shown) on the glass substrate 301, by with one to several pulse motion scan irradiation positions, make the amorphous silicon film 302 in wide zone become the silicon fiml 304 of modification.By on whole of substrate, implementing so wide area illumination, amorphous silicon film can be modified as polysilicon film.
For the silicon fiml that carries out modification with such excimer laser, implement modification similarly to Example 1 based on the laser radiation of present embodiment, can further improve the crystallinity of polysilicon.In the embodiment of present embodiment, after the modification of the laser radiation of present embodiment, by and the identical step of the 1st embodiment, can make active-matrix substrate of the present invention and use the liquid crystal indicator of this substrate.
The unique point that should give special heed to of present embodiment is that although used the silicon fiml that generates fine crystal by excimer laser irradiation in advance, the polysilicon film that laser radiation generates does not have different with the polysilicon film that generates from amorphous silicon film.That is, even under the situation of having implemented the excimer laser irradiation, in the thin film transistor (TFT) of the polysilicon film that uses present embodiment to obtain, for example when making N raceway groove MIS transistor, the field effect mobility is about 300cm
2More than/the Vs, and the deviation of threshold voltage can be suppressed at ± below the 0.2V, high-performance, work highly reliably, can make the active-matrix substrate of the excellent in uniform between device, and, can obtain the high display device of quality by using this substrate.
In the known knowledge in present technique field, can use the crystallization of excimer laser irradiation carrying out amorphous silicon film.In such crystallization, can obtain the polysilicon film that the following fine crystal of about 1 μ m constitutes, in of the film formed thin film transistor (TFT) of this polysilicon, for example to make under the transistorized situation of N raceway groove MIS, the field effect mobility is about 100cm
2Below/the Vs, and can the deviation of threshold voltage is also big.Even compare with so known knowledge, also can find out the good result of present embodiment.
[the 3rd embodiment]
In the present embodiment, become the silicon fiml that irradiating laser carries out the modification object and be not limited to amorphous silicon film.Shown in the embodiment that illustrates among above-mentioned the 2nd embodiment, the silicon fiml of present embodiment can be the polysilicon film by the amorphous silicon film modification, also can be with the silicon fiml of the modification of the pixel portions amorphous silicon film of modification once more.And the silicon fiml of its pixel portions of present embodiment is the polysilicon film that forms by sputtering method, and the silicon fiml of the modification of pixel portions also can be the polysilicon film of modification once more.And the silicon fiml of this pixel portions is the polysilicon film that forms by the CVD method, also can be the silicon fiml combination of the polysilicon film of modification once more with the modification of pixel portions.The following another embodiment of the present invention of the silicon fiml different with the foregoing description being carried out modification that illustrates with reference to Fig. 9.
Fig. 9 is the sectional view of formation step of active-matrix substrate of schematically representing the 3rd embodiment of display device of the present invention.Same with the 1st embodiment, prepare thickness and be about 0.3mm to 1.0mm, be preferably in 400 ℃ to 600 ℃ the thermal treatment distortion and shrink little stable on heating glass substrate 501.On this glass substrate 501, pile up continuously and equably the SiN film 502 of the about 50nm of thickness of barrier film function and the SiO film 503 of the about 50nm of thickness, on this barrier film, press the amorphous silicon film 504 (with reference to Fig. 9 A) of the about 50nm of CVD method ulking thickness with the sputtering method acquisition with chemical by the CVD method.
Then, only shine pixel portions by the laser irradiation that has used the device identical with the device that illustrates among above-mentioned the 1st embodiment, the silicon fiml that will form the part of image element circuit by laser radiation is modified as polysilicon film 505 (with reference to Fig. 9 B) from amorphous silicon film 504.Shown in Fig. 9 C, silicon fiml after such modification 505 is carried out corrosion treatment and become the circuit of regulation, form gate insulating film (not shown), grid wiring (becoming grid) 506, interlayer dielectric 507, source/leak routing 508, passivating film 509 successively, become the transparency electrode 510 of pixel electrode.Thus, formation will use the transistor circuit of the silicon fiml 505 of modification to be configured in active-matrix substrate in the pixel.
In forming such transistor circuit, same with the 1st embodiment, preferably with the electronics of gate portion or the moving direction and the parallel consistent configuration of the crystalline growth direction of silicon fiml in hole.
In the present embodiment, also make crystalline growth direction difference, thereby the direction of growth of the moving direction of the charge carrier of the thin film transistor (TFT) of pixel portions and crystallization produces the different of 0 degree or 180 degree by reciprocating action based on laser radiation.Should particularly point out, under these circumstances, such difference influences transistor characteristic hardly.The direction of electron transfer and use the table 1 among the 1st embodiment to illustrate with the relation of electron mobility by the angle (absolute value) that the crystalline growth direction of laser scanning direction of the present invention definition forms.
The performance of the thin film transistor (TFT) that has on the active-matrix substrate that present embodiment obtains and the 1st embodiment and the 2nd embodiment are good equally.For example, making under the transistorized situation of N raceway groove MIS, the field effect mobility is about 300cm
2More than/the Vs, and the deviation of threshold voltage can be suppressed at ± below the 0.2V.
The active-matrix substrate of use present embodiment is made the method for liquid crystal indicator and the method for above-mentioned the 1st embodiment and the 2nd embodiment explanation is known equally, by being used for liquid crystal indicator, can obtain its high speed display action, the display device that can provide picture quality to have good uniformity at an easy rate.
[the 4th embodiment]
In the present embodiment, become the silicon fiml that irradiating laser carries out the modification object and be not limited to amorphous silicon film, as the embodiment explanation of above-mentioned embodiment, can be polysilicon film, and the silicon fiml of the modification of pixel portions also can be the polysilicon film of modification once more from the amorphous silicon film modification.And the silicon fiml of its pixel portions of present embodiment is the polysilicon film that forms by sputtering method, and the silicon fiml of the modification of pixel portions also can be the polysilicon film of modification once more.And the silicon fiml of this pixel portions is the polysilicon film that forms by the CVD method, also can be the silicon fiml combination of the polysilicon film of modification once more with the modification of pixel portions.
Same with the 1st embodiment, prepare thickness and be about 0.3mm to 1.0mm, be preferably in 400 ℃ to 600 ℃ the thermal treatment distortion and shrink little stable on heating glass substrate.On this glass substrate, pile up continuously and equably the SiN film 502 of the about 50nm of thickness of barrier film function and the SiO film 503 of the about 50nm of thickness with thermochemistry by the CVD method.On this barrier film, press the polysilicon film of the about 50nm of CVD method ulking thickness.
The technology of piling up polysilicon film by the CVD method is as well known to those skilled in the art, by adopting the method for present embodiment, can improve the crystallinity of the polysilicon film that obtains by the CVD method significantly.The effect of present embodiment does not rely on the film quality of the silicon fiml that becomes the irradiating laser object, can obtain stable polysilicon film after demonstrating irradiation, and this is the feature of present embodiment.
The active-matrix substrate of use present embodiment is made the method for liquid crystal indicator and the method for above-mentioned the 1st embodiment to the 3 embodiment explanation is known equally, by being used for liquid crystal indicator, can obtain its high speed display action, the display device that can provide picture quality to have good uniformity at an easy rate.
[the 5th embodiment]
Below with reference to Figure 10, Figure 11, Figure 12, Figure 13, Figure 14 and Figure 15 present embodiment is described.Present embodiment is worked hard to the configuration of the image element circuit on the active-matrix substrate as one of embodiments of the present invention, can further improve the efficient of laser radiation of the present invention significantly.
Figure 10 is the planimetric map of a figure example of the laser irradiating part of explanation the present invention the 5th embodiment, Figure 11 is the planimetric map of another figure example of the laser irradiating part of explanation the present invention the 5th embodiment, Figure 12 is the planimetric map of another figure example of the laser irradiating part of explanation the present invention the 5th embodiment, Figure 13 is the planimetric map of another figure example of the laser irradiating part of explanation the present invention the 5th embodiment, Figure 14 is the planimetric map of another figure example of the laser irradiating part of explanation the present invention the 5th embodiment, and Figure 15 is the planimetric map of another figure example of the laser irradiating part of explanation the present invention the 5th embodiment.
In the figure of Figure 10, Figure 11, Figure 12, Figure 13, Figure 14 and laser irradiating part shown in Figure 15, the row centralized configuration of the pixel region that the configuration of image element circuit whichsoever all constitutes the circuit part 602 of 2 row pixels 601 of the first-class arranged spaced of x direction adjacent middle body on the y direction.
Then, become the laser radiation zone 603 of selection, thereby make the efficient of laser radiation improve about 2 times by the pixel region that only makes centralized configuration.The disposition interval that the figure of these laser irradiating parts has an image element circuit equals 2 times feature of pel spacing.
On the method for pixel arrangement, except above-mentioned Figure 10, Figure 11, Figure 12, Figure 13, Figure 14 and example shown in Figure 15, should be noted that the disposition interval of image element circuit is included in the present embodiment with the configuration that 2 letters of pel spacing equate.In addition, from these configurations, select which configuration, should consider the wires design of the gate electrode side of the thin film transistor (TFT) that forms and source side and image element circuit layout (pixel arrangement), image element circuit driving method and make it optimum.
Have again, the method that illustrates among the manufacture method of concrete active-matrix substrate and the 1st embodiment is identical just passable, in that the laser radiation width is consistent with the centralized configuration of pixel, for example by selecting about 70 μ m, about 2 times of illumination efficiency can be brought up to the 1st embodiment situation.Under such configuring condition, emphasize that laser radiation can adopt shuttle-scanning just passable.
Below, the configuration (layout) that present embodiment specifically is applied to the pixel portions under the liquid crystal indicator situation is described with reference to Figure 16, Figure 17, Figure 18, Figure 19, Figure 20, Figure 21.Figure 16 is the planimetric map of pixel arrangement of pixel portions that is used for the existing TN type liquid crystal indicator of comparative descriptions the 5th embodiment of the present invention, Figure 17 is the planimetric map of pixel arrangement of pixel portions of the TN type liquid crystal indicator of expression the present invention the 5th embodiment one example, Figure 18 is the planimetric map of pixel arrangement of pixel portions that is used to illustrate another routine TN type liquid crystal indicator of the present invention the 5th embodiment, Figure 19 is the planimetric map of pixel arrangement of pixel portions that is used for the existing IPS type liquid crystal indicator of comparative descriptions the 5th embodiment of the present invention, Figure 20 is the planimetric map of pixel arrangement of pixel portions of the IPS type liquid crystal indicator of expression the present invention the 5th embodiment one example, and Figure 21 is the planimetric map of figure example of the laser irradiating part that comprises pixel portions and peripheral circuit portion of the display device of explanation the present invention the 5th embodiment.
The pixel arrangement of existing TN (twisted nematic) type liquid crystal indicator is a representative configuration shown in Figure 16, is the configuration with above-mentioned Fig. 7 equivalence.In pixel arrangement shown in Figure 16, dispose driving transistors at the grid wiring 1006 of trellis configuration and the cross part of data arrange 1008 with the grid 1004 that comprises polysilicon 1002, obtain to connect by contact hole 1111, control is as the voltage of the transparency electrode 1010 of pixel electrode.Be used to keep storer (electric capacity) portion 1110 of display voltage generally to be formed in the lap of the grid wiring 1006 of transparency electrode 1010 and prime.
The pixel arrangement of TN type LCD of the present invention is a representative configuration shown in Figure 17, is the configuration with Figure 16 equivalence.That is,,, can realize the configuration of the thin film transistor (TFT) concentrated by the grid wiring 1006 of centralized configuration 2 pixels for equally spaced data arrange 1008.But existing pixel arrangement as shown in figure 16 can not utilize a part of grid wiring of prime to constitute storage part.Therefore, storage wire 1113 need be set in addition, with overlapping of transparency electrode 1010 in constitute storage part.When using such pixel arrangement, only change the layout of exposed mask, do not reduce aperture opening ratio, can make the liquid crystal indicator of TN type with the process number identical with manufacturing process in the past.
The representational pixel arrangement of another TN type LCD of the present invention is shown in Figure 18.This pixel arrangement is the configuration with the configuration equivalence of above-mentioned Figure 15.In such pixel arrangement, also only change the layout of exposed mask, do not reduce aperture opening ratio, can make the liquid crystal indicator of TN type with the process number identical with manufacturing process in the past.
And the pixel arrangement of existing in-plane switching (IPS) type liquid crystal indicator is a representative configuration shown in Figure 19.It is the pixel arrangement with Fig. 7 equivalence.In pixel arrangement shown in Figure 19, configuration has the thin film transistor (TFT) of the grid 1004 that comprises polysilicon 1002 in the cross part of the grid wiring 1006 of trellis configuration and data arrange 1008, obtain pixel electrode 114 by contact hole 1111 and be connected, the voltage between common electrode (opposite electrode) 115 and the pixel electrode 1114 is controlled with the source electrode of thin film transistor (TFT).The storer (electric capacity) that is used for keeping this voltage generally constitutes with grid wiring 1006 parellel arranged storeies wirings 113 the storer electrode being set.
The pixel arrangement of IPS type liquid crystal indicator of the present invention is a representative configuration shown in Figure 20, is the pixel arrangement with Figure 10 equivalence.For equally spaced data arrange 1008,, can realize the configuration of the thin film transistor (TFT) concentrated by the grid wiring 1006 of centralized configuration 2 pixels.In this case, also walk abreast storer wiring 1113, pattern of wants memory section are set with grid wiring 1006.When using such pixel arrangement, also only change the layout of exposed mask, and do not reduce aperture opening ratio, can make IPS type liquid crystal indicator with the process number identical with existing manufacturing process.
Shown in above-mentioned embodiment, can use the present invention easily to make liquid crystal indicator.And, also can similarly make the EL display device.
In the above-described embodiments, show the example of the single grid thin film transistor (TFT) of whole uses, but self-evident, the invention is not restricted to this.That is, when using so-called two grid thin film transistor (TFT), also can make display device by identical pixel arrangement.In this case, the area of film crystal tube portion increases slightly, owing to suppress outstanding by puncturing (off leak) electric current and improving withstand voltage advantages such as effect, so can improve the manufacturing qualification rate, is more suitable for using in the product of reality but then.
Have again, in pixel arrangement of the present invention, the configuration of the gate driver circuit of the peripheral circuit portion (driving circuit portion) that is provided with by pixel region periphery also equates with the disposition interval of the thin film transistor (TFT) of pixel portions, can make pixel portions and peripheral circuit portion simultaneously with method of the present invention.That is, as shown in figure 21, the laser radiation zone 603 that forms the pixel portions of pixel 601 is extended to the gate driver circuit portion 1200 of peripheral circuit portion,, can improve the throughput rate of active-matrix substrate significantly by making peripheral circuit in prolonging the zone at this.When in the prolongation zone in this laser radiation zone 603, disposing gate driver circuit 1200; utilize the thin film transistor (TFT) of the silicon fiml making of modification of the present invention, can realize comprising the gate driver circuit portion 1200 of voltage transformation, impedance conversion, shift register, various switch, holding circuit etc.Under these circumstances, make the disposition interval of image element circuit portion and the disposition interval of peripheral circuit portion equate it is obvious characteristic of the present invention.
[the 6th embodiment]
The laser radiation of present embodiment is with the pixel portions of laser radiation to the active-matrix substrate, according to being the same procedure of the measured polysilicon film of matter with the part that will form image element circuit by laser radiation silicon film modified, silicon fiml to the peripheral circuit portion of the circumferential arrangement of pixel portions also carries out modification, uses the thin film transistor (TFT) identical with pixel portions to form peripheral circuit.
Figure 22 is the planimetric map of the active-matrix substrate of explanation the present invention the 6th embodiment.Present embodiment and the 1st embodiment are same, and the pixel portions of only having piled up amorphous silicon film 701 on glass substrate forms the zone that makes polysilicon film 702 modifications along x direction ribbon ground irradiating laser.And the method that illustrates in also by the 1st embodiment in the peripheral circuit portion 703 and 704 of the circumferential arrangement of pixel portions forms the zone of having shone laser.In Figure 22, the zone of peripheral circuit portion 703 is as the peripheral circuit portion of source side, and peripheral circuit portion 704 is as the peripheral circuit portion of gate electrode side.
Then, form image element circuit, in peripheral circuit, form thin film transistor (TFT) simultaneously by the method identical with the 1st embodiment.According to present embodiment, can reduce the required drive integrated circult (driver IC: LSI) of driving of display device significantly.If with the SXGA screen (1280 * 1024) as large-scale display device (large-screen) representative is example, then about 14 with respect to the driver IC number of market sale screen, using under the situation of the present invention, the IC number is reduced to below 2, can be reduced to 0 at most.And, if make liquid crystal indicator, then except reducing driver IC, can also reduce the burden that this IC encapsulates the manufacturing processing that brings, so can provide quality good and low-cost LCD according to present embodiment.The reason that can carry out such embodiment is that the performance of the active-matrix substrate that present embodiment obtains has high performance effect required in the driving of satisfying peripheral circuit.
[the 7th embodiment]
Present embodiment is not limited to common top gate type thin film transistor circuit with the circuit of the silicon fiml formation of modification, also can be to form the bottom gate thin film transistor circuit.When only needing single P-channel circuit of N raceway groove MIS or P raceway groove MIS, from the simplification of manufacturing process, bottom gate type preferably certainly.For present embodiment, below the embodiment that applies the present invention under the bottom gate thin film transistor circuit conditions is described with reference to Figure 23.
Figure 23 is the sectional view of the thin film transistor (TFT) structure that has on the active-matrix substrate of illustrative the present invention the 7th embodiment.In Figure 23, on glass substrate 801, pile up SiN film 802 and SiO film 803 with barrier film function by means such as CVD very unfertile land.Form grid 804 with the shape of stipulating thereon subsequently.Then, form gate insulating film 805 and come cover gate 804.Then, be amorphous silicon film about 100nm by CVD method ulking thickness.When the film forming of this amorphous silicon film,, exist the amorphous silicon film of piling up the N type just passable simultaneously by the hydrogen phosphide that makes silane gas and ormal weight in order to constitute the MIS transistor of N type.
Then, press only irradiating laser on grid 806 of above-mentioned laser irradiation, will form the partially modified of image element circuit is polysilicon film.Then, on silicon fiml, press the CVD method of increase hydrogen phosphide amount with N
+Layer is stacked into the thickness about 20nm, forms laminated film.At assigned position to be the laminated film that the regulation shape comes dry corrosion to form like this, form island 806.Formation source/leak routing 807 on the island 806 that forms is removed the N that is exposed to beyond source electrode and the drain electrode wiring portion by dry corrosion
+Layer.
Then, by forming passivating film 808, transparency electrode 809 successively, making will use the transistor circuit that is modified as the silicon fiml of polysilicon from amorphous silicon to be configured in active-matrix substrate the pixel.It is as well known to those skilled in the art that such circuit formation, electrode forms required process technology summary.In addition, need midway to append in manufacturing process that to activate operation such as annealing also be known.
In above-mentioned manufacturing process, can the impurity carrier based on the film forming of CVD the time, inject so can omit the high and numerous and diverse ion of price, be very economical.And, as P type carrier,, also can make P type MIS by using the doping of monoborane gas.Therefore, adopt bottom gate type to become the method for optimizing that single channel-type semiconductor devices is provided economically.
As present embodiment, making according to the present invention under the transistorized situation of bottom gate type, on grid wiring by dielectric film to the silicon fiml irradiating laser, so with regard to the grid wiring material, preferably adopt refractory metal.Therefore, one of feature of present embodiment is, as the grid wiring material, uses with tungsten (W) or molybdenum (Mo) wiring material as principal ingredient.
[the 8th embodiment]
Figure 24 is the key diagram of further improved structure example that is used to realize the laser irradiating device of manufacture method of the present invention.In the present invention, to the silicon fiml of pixel portions irradiating laser optionally, form image element circuit on the silicon fiml of the modification of this pixel portions, use the laser beam variation, shining in the concurrent working mode becomes the principal element of boosting productivity.In the parallelization of such laser radiation, it is effective disposing many above-mentioned laser irradiation devices shown in Figure 3 side by side.Wherein, such as described below, will be a plurality of from the light beam parallel partition of 1 LASER Light Source vibration, also be unusual effective method.Illustrate in passing that in parallel setting of laser irradiation device, establishing its number is m, irradiation time is compared during with 1, can approximately shorten to 1/m.
As shown in figure 24, laser a plurality of are cut apart and will be cut apart in the inside of optical systems such as homogenizer 903 from the laser beam 902 of LASER Light Source 901 vibrations.The laser beam that to cut apart imports to a plurality of condensing lens systems 905 by a plurality of leaded lights paths such as optical fiber 904, and to form a plurality of illumination beams 906 be effective.Such light beam is cut apart, the formation technology in leaded light path this in the scope of optical technology, but be noted that and use such technology in the present invention, make and silicon film modifiedly the needed time and greatly shorten.If laser cut apart number for n, irradiation time is compared during with 1, approximately can shorten to 1/n.And, if using laser beam simultaneously cuts apart and the setting that walks abreast, then irradiation time approximately can shorten to 1/nm, can greatly improve the throughput rate of this active-matrix substrate, and be not limited to such active-matrix substrate, if be applied to the manufacturing of various semiconductor devices, then can greatly improve its throughput rate.
Figure 25 is the outside drawing that a routine e-machine of display device of the present invention is used in expression.This e-machine is a televisor, and the screen board PNL that has above-mentioned certain example structure is installed in its display part, is stood upright on cradle portion.Screen board PNL is a liquid crystal indicator, or organic EL display, or the display device of other active array types.And cradle portion is also dismantled and assembled.
And, the invention is not restricted to the structure described in structure described in the claim scope and the embodiment, much less, can not break away from the various distortion of technological thought of the present invention.
As described above, the present invention to the silicon fiml selectivity of pixel portions and expeditiously irradiating laser come silicon fiml is carried out modification, on the silicon fiml of modification, form image element circuit and obtain active-matrix substrate, use this substrate to constitute display device, so, can improve its technology, economic effect significantly by high performance display device is provided at an easy rate.
Although illustrated and discussed several embodiments of the present invention, should be understood that the embodiment of disclosure can improve and change under the situation that does not break away from spirit of the present invention.Therefore, the applicant comes specified scope by the details of showing and discuss here, and such change and improvement are all covered by claims.
Claims (14)
1. active matrix type display, it is characterized in that: comprise active-matrix substrate, this active-matrix substrate have to the silicon fiml that on insulated substrate, forms optionally irradiating laser and modification modification area, in this modification area, be provided with active circuit
The described active circuit that is provided with in described modification area comprises: the image element circuit that forms in the viewing area of described active-matrix substrate and be formed on the driving circuit of the periphery of described viewing area accordingly with each row image element circuit of arranging along the first direction of this viewing area
A plurality of by each described image element circuit of row with every pair of adjacent group in the group that constitutes of driving circuit of correspondence is close mutually on the second direction of intersecting with described first direction with it;
Each to described group of constituting by the row of described image element circuit and driving circuit to 2 times of the spacing of the pixel that equals at the arrangement pitches on the described second direction in described viewing area to arrange along this second direction.
2. active matrix type display as claimed in claim 1 is characterized in that described active circuit is formed by bottom gate thin film transistor.
3. active matrix type display as claimed in claim 1 is characterized in that described active circuit is a thin film transistor (TFT), and the grid of this thin film transistor (TFT) is by forming with tungsten or the molybdenum wiring material as principal ingredient.
4. the manufacture method of an active matrix type display, this active matrix type display comprises active-matrix substrate, this active-matrix substrate have to the silicon fiml that on insulated substrate, forms optionally irradiating laser and modification modification area, in this modification area, be formed with in the viewing area of this insulated substrate along first direction and with the image element circuit portion separately of a plurality of pixels of its second direction of intersecting configuration, it is characterized in that:
In described viewing area, in the pixel groups that constitutes at the described pixel of arranging along described first direction, on described second direction adjacent each to pixel groups, to belong to the first group of described image element circuit portion of the side in the above-mentioned a pair of pixel groups along the configuration of the opposed mode of described second direction concentrated area and to belong to the described image element circuit of second group of the opposing party in above-mentioned a pair of pixel groups portion;
To the centralized configuration of described silicon fiml the each several part of the described image element circuit of first group and second group portion carry out the shuttle-scanning of laser respectively, to this each several part of this silicon fiml irradiating laser and carry out modification optionally;
In modification silicon fiml on form image element circuit.
5. the manufacture method of active matrix type display as claimed in claim 4 is characterized in that, the silicon fiml of described image element circuit portion is the amorphous silicon film that forms with the CVD method, described modification silicon fiml be polysilicon film.
6. the manufacture method of active matrix type display as claimed in claim 4, it is characterized in that, the silicon fiml of described image element circuit portion is the polysilicon film by amorphous silicon film modification gained, described by to described silicon fiml optionally irradiating laser and modification silicon fiml be this polysilicon film polysilicon film of obtaining of modification once more.
7. the manufacture method of active matrix type display as claimed in claim 4, it is characterized in that, the silicon fiml of described image element circuit portion is the polysilicon film that forms with sputtering method, described by to described silicon fiml optionally irradiating laser and modification silicon fiml be this polysilicon film that forms with sputtering method polysilicon film of obtaining of modification once more.
8. the manufacture method of active matrix type display as claimed in claim 4, it is characterized in that, the silicon fiml of described image element circuit portion is the polysilicon film that forms with the CVD method, described by to described silicon fiml optionally irradiating laser and modification silicon fiml be the polysilicon film of this usefulness CVD method formation polysilicon film that obtains of modification once more.
9. the manufacture method of active matrix type display as claimed in claim 4 is characterized in that, the zone of described optionally irradiating laser is formed ribbon along described first direction on described active-matrix substrate.
10. the manufacture method of active matrix type display as claimed in claim 4 is characterized in that, described Wavelength of Laser is the Solid State Laser of 400nm to 2000nm.
11. the manufacture method of active matrix type display as claimed in claim 4 is characterized in that, the laser instrument that generates described laser is an excimer laser.
12. the manufacture method of active matrix type display as claimed in claim 4 is characterized in that, is 20 μ m to 1000 μ m to the irradiating width of the described laser of the enterprising line scanning of described active-matrix substrate.
13. the manufacture method as the active matrix type display of claim 12 is characterized in that the sweep velocity of described laser is 1mm/s to 1000mm/s.
14. the manufacture method as the active matrix type display of claim 12 is characterized in that, is a plurality of laser that single laser is split to form to the laser of the enterprising line scanning of described active-matrix substrate, uses described a plurality of laser to carry out and line scanning.
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| Application Number | Priority Date | Filing Date | Title |
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| JP164134/2002 | 2002-06-05 | ||
| JP2002164134 | 2002-06-05 |
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| KR (1) | KR100531392B1 (en) |
| CN (1) | CN1310199C (en) |
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| JP4567984B2 (en) * | 2004-01-30 | 2010-10-27 | 株式会社 日立ディスプレイズ | Flat panel display manufacturing equipment |
| EP2479604B1 (en) | 2005-12-05 | 2015-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| KR100698691B1 (en) * | 2005-12-21 | 2007-03-23 | 삼성에스디아이 주식회사 | Crystallization of amorphous-Silicon film using an Excimer-Laser and Method for fabricating of poly Transparent Thin Film Transistor |
| WO2010044558A2 (en) * | 2008-10-15 | 2010-04-22 | 주식회사 인포비온 | Method for manufacturing a silicon thin film using energy beam irradiation |
| KR101042636B1 (en) * | 2008-10-15 | 2011-06-20 | 김용환 | Methods for silicon thin film deposition with energetic beam irradiation |
| KR101739019B1 (en) * | 2010-11-01 | 2017-05-24 | 삼성디스플레이 주식회사 | Laser crystallization system and method of manufacturing display apparatus using the same |
| WO2019003417A1 (en) * | 2017-06-30 | 2019-01-03 | シャープ株式会社 | Flexible display device and production method therefor |
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| CN1467694A (en) | 2004-01-14 |
| KR20030093925A (en) | 2003-12-11 |
| KR100531392B1 (en) | 2005-11-28 |
| TW200307903A (en) | 2003-12-16 |
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