JP2009260313A5 - - Google Patents

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Publication number
JP2009260313A5
JP2009260313A5 JP2009069508A JP2009069508A JP2009260313A5 JP 2009260313 A5 JP2009260313 A5 JP 2009260313A5 JP 2009069508 A JP2009069508 A JP 2009069508A JP 2009069508 A JP2009069508 A JP 2009069508A JP 2009260313 A5 JP2009260313 A5 JP 2009260313A5
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JP
Japan
Prior art keywords
single crystal
substrate
semiconductor substrate
crystal semiconductor
manufacturing
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JP2009069508A
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English (en)
Japanese (ja)
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JP2009260313A (ja
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Priority to JP2009069508A priority Critical patent/JP2009260313A/ja
Priority claimed from JP2009069508A external-priority patent/JP2009260313A/ja
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Publication of JP2009260313A5 publication Critical patent/JP2009260313A5/ja
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JP2009069508A 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法 Withdrawn JP2009260313A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009069508A JP2009260313A (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008079509 2008-03-26
JP2009069508A JP2009260313A (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014099380A Division JP2014179643A (ja) 2008-03-26 2014-05-13 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009260313A JP2009260313A (ja) 2009-11-05
JP2009260313A5 true JP2009260313A5 (enExample) 2012-04-12

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ID=41117876

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Application Number Title Priority Date Filing Date
JP2009069508A Withdrawn JP2009260313A (ja) 2008-03-26 2009-03-23 Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP2014099380A Withdrawn JP2014179643A (ja) 2008-03-26 2014-05-13 半導体装置の作製方法
JP2016024294A Expired - Fee Related JP6154926B2 (ja) 2008-03-26 2016-02-12 Ｓｏｉ基板の作製方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2014099380A Withdrawn JP2014179643A (ja) 2008-03-26 2014-05-13 半導体装置の作製方法
JP2016024294A Expired - Fee Related JP6154926B2 (ja) 2008-03-26 2016-02-12 Ｓｏｉ基板の作製方法

Country Status (2)

Country Link
US (1) US9633892B2 (enExample)
JP (3) JP2009260313A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
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JP2009260315A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
JP5796316B2 (ja) * 2011-03-22 2015-10-21 株式会社村田製作所 圧電デバイスの製造方法
US9190294B2 (en) * 2012-08-23 2015-11-17 Michael Xiaoxuan Yang Methods and apparatus for separating a substrate
CN106409650B (zh) * 2015-08-03 2019-01-29 沈阳硅基科技有限公司 一种硅片直接键合方法
DE102016112139B3 (de) * 2016-07-01 2018-01-04 Infineon Technologies Ag Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper
US11232976B2 (en) 2017-07-20 2022-01-25 National Research Council Of Canada Treating a silicon on insulator wafer in preparation for manufacturing an atomistic electronic device interfaced with a CMOS electronic device
US11232974B2 (en) * 2018-11-30 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Fabrication method of metal-free SOI wafer
JP7596191B2 (ja) * 2021-03-24 2024-12-09 株式会社東京精密 シリコンウエハの表面改質方法

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KR101447048B1 (ko) * 2007-04-20 2014-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판 및 반도체장치의 제조방법
KR101440930B1 (ko) * 2007-04-20 2014-09-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판의 제작방법
KR101436116B1 (ko) * 2007-04-27 2014-09-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｓｏｉ 기판 및 그 제조 방법, 및 반도체 장치
EP1993127B1 (en) * 2007-05-18 2013-04-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate
US7772054B2 (en) * 2007-06-15 2010-08-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5277571B2 (ja) * 2007-06-18 2013-08-28 セイコーエプソン株式会社 ノズル基板の製造方法及び液滴吐出ヘッドの製造方法

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