JP2018093169A5 - - Google Patents
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- JP2018093169A5 JP2018093169A5 JP2017163366A JP2017163366A JP2018093169A5 JP 2018093169 A5 JP2018093169 A5 JP 2018093169A5 JP 2017163366 A JP2017163366 A JP 2017163366A JP 2017163366 A JP2017163366 A JP 2017163366A JP 2018093169 A5 JP2018093169 A5 JP 2018093169A5
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- Prior art keywords
- material layer
- semiconductor device
- manufacturing
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- Prior art date
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- 239000000463 material Substances 0.000 claims 41
- 238000000034 method Methods 0.000 claims 11
- 239000001257 hydrogen Substances 0.000 claims 8
- 229910052739 hydrogen Inorganic materials 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 5
- 229910001868 water Inorganic materials 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000011347 resin Substances 0.000 claims 3
- 229920005989 resin Polymers 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021149172A JP2022002323A (ja) | 2016-08-31 | 2021-09-14 | 半導体装置の作製方法 |
| JP2023103991A JP7596453B2 (ja) | 2016-08-31 | 2023-06-26 | 半導体装置の作製方法 |
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016170379 | 2016-08-31 | ||
| JP2016170379 | 2016-08-31 | ||
| JP2016173346 | 2016-09-06 | ||
| JP2016173346 | 2016-09-06 | ||
| JP2016198948 | 2016-10-07 | ||
| JP2016198948 | 2016-10-07 | ||
| JP2016233445 | 2016-11-30 | ||
| JP2016233445 | 2016-11-30 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021149172A Division JP2022002323A (ja) | 2016-08-31 | 2021-09-14 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018093169A JP2018093169A (ja) | 2018-06-14 |
| JP2018093169A5 true JP2018093169A5 (enExample) | 2020-10-08 |
| JP6945392B2 JP6945392B2 (ja) | 2021-10-06 |
Family
ID=61243347
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017163366A Active JP6945392B2 (ja) | 2016-08-31 | 2017-08-28 | 半導体装置の作製方法 |
| JP2021149172A Withdrawn JP2022002323A (ja) | 2016-08-31 | 2021-09-14 | 半導体装置の作製方法 |
| JP2023103991A Active JP7596453B2 (ja) | 2016-08-31 | 2023-06-26 | 半導体装置の作製方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021149172A Withdrawn JP2022002323A (ja) | 2016-08-31 | 2021-09-14 | 半導体装置の作製方法 |
| JP2023103991A Active JP7596453B2 (ja) | 2016-08-31 | 2023-06-26 | 半導体装置の作製方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10236408B2 (enExample) |
| JP (3) | JP6945392B2 (enExample) |
| KR (1) | KR102425705B1 (enExample) |
| CN (1) | CN109564851A (enExample) |
| TW (1) | TWI755423B (enExample) |
| WO (1) | WO2018042284A1 (enExample) |
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| KR102389537B1 (ko) | 2016-07-29 | 2022-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기 |
| JP6981812B2 (ja) | 2016-08-31 | 2021-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US10369664B2 (en) | 2016-09-23 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| KR102515871B1 (ko) | 2016-10-07 | 2023-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판 |
| US10170600B2 (en) * | 2017-01-12 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US11133491B2 (en) | 2017-03-16 | 2021-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device and semiconductor device |
| JP6980421B2 (ja) * | 2017-06-16 | 2021-12-15 | 株式会社ディスコ | ウエーハの加工方法 |
| WO2019171555A1 (ja) * | 2018-03-08 | 2019-09-12 | シャープ株式会社 | 可撓性表示装置の製造方法、および非可撓性基板 |
| US10964664B2 (en) | 2018-04-20 | 2021-03-30 | Invensas Bonding Technologies, Inc. | DBI to Si bonding for simplified handle wafer |
| WO2019215833A1 (ja) * | 2018-05-09 | 2019-11-14 | 堺ディスプレイプロダクト株式会社 | フレキシブル発光デバイスの製造方法および製造装置 |
| JP7410935B2 (ja) | 2018-05-24 | 2024-01-10 | ザ リサーチ ファウンデーション フォー ザ ステイト ユニバーシティー オブ ニューヨーク | 容量性センサ |
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| JP7128697B2 (ja) * | 2018-09-19 | 2022-08-31 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
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| CN113169058A (zh) * | 2018-11-29 | 2021-07-23 | 昭和电工材料株式会社 | 半导体装置的制造方法及临时固定材料用层叠膜 |
| JP7131465B2 (ja) * | 2019-04-03 | 2022-09-06 | 株式会社デンソー | 車両制御装置 |
| KR20220009991A (ko) * | 2019-05-16 | 2022-01-25 | 드래곤플라이 에너지 코퍼레이션 | 전기화학 전지의 건조 분말 코팅 층들을 위한 시스템들 및 방법들 |
| CN110383460B (zh) * | 2019-05-21 | 2021-11-30 | 京东方科技集团股份有限公司 | 柔性电子基板的制作方法及基板结构 |
| KR102456122B1 (ko) * | 2019-08-14 | 2022-10-19 | 한양대학교 산학협력단 | 플렉서블 장치의 제조방법 |
| CN110550869B (zh) * | 2019-10-12 | 2020-09-01 | 北京大学 | 一种离子注入辅助制备石墨烯玻璃的方法以及一种石墨烯玻璃 |
| CN111081743B (zh) * | 2019-12-11 | 2022-06-07 | 深圳市华星光电半导体显示技术有限公司 | 显示面板的制造方法及显示面板 |
| JP7549515B2 (ja) * | 2019-12-17 | 2024-09-11 | 日本放送協会 | 導電領域の形成方法、及び薄膜トランジスタの製造方法 |
| JP6900540B1 (ja) * | 2020-04-08 | 2021-07-07 | 信越エンジニアリング株式会社 | ワーク分離装置及びワーク分離方法 |
| CN111554135B (zh) * | 2020-05-28 | 2021-10-15 | 滁州学院 | 一种创新创业教育互动多媒体装置 |
| CN112420742B (zh) * | 2020-11-05 | 2022-11-25 | 深圳市华星光电半导体显示技术有限公司 | 柔性显示装置及制备方法 |
| WO2023122513A1 (en) * | 2021-12-20 | 2023-06-29 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding and debonding of elements |
| JP7541093B2 (ja) * | 2021-12-21 | 2024-08-27 | 武漢華星光電半導体顕示技術有限公司 | ディスプレイパネル、ディスプレイモジュール、および移動端末 |
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| US9397149B2 (en) * | 2013-12-27 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| EP3125308A4 (en) | 2014-03-25 | 2017-11-22 | Kaneka Corporation | Method for manufacturing compound semiconductor solar cell |
| JP6354338B2 (ja) | 2014-05-30 | 2018-07-11 | 東レ株式会社 | 積層体、積層体の製造方法、及びこれを用いたフレキシブルデバイスの製造方法 |
| US20170137571A1 (en) * | 2014-06-04 | 2017-05-18 | Ube Industries, Ltd. | Method for producing polyimide film |
| TWI695531B (zh) | 2014-07-16 | 2020-06-01 | 日商Lantechnical服務股份有限公司 | 薄形基板及其製造方法、以及基板之搬送方法 |
| EP3187927B1 (en) * | 2014-08-28 | 2022-06-29 | Sony Group Corporation | Display device and lighting device |
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| US9397001B2 (en) * | 2014-12-11 | 2016-07-19 | Panasonic Intellectual Property Management Co., Ltd. | Method for manufacturing electronic device comprising a resin substrate and an electronic component |
| US10115747B2 (en) * | 2015-01-06 | 2018-10-30 | Sharp Kabushiki Kaisha | Method of producing component board |
| CN105374829B (zh) * | 2015-12-01 | 2018-03-27 | 上海天马有机发光显示技术有限公司 | 一种柔性显示基板及其制备方法 |
| TWI753868B (zh) | 2016-08-05 | 2022-02-01 | 日商半導體能源研究所股份有限公司 | 剝離方法、顯示裝置、顯示模組及電子裝置 |
| TW201808628A (zh) | 2016-08-09 | 2018-03-16 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
| TWI730017B (zh) | 2016-08-09 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置 |
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2017
- 2017-08-22 KR KR1020197009196A patent/KR102425705B1/ko active Active
- 2017-08-22 WO PCT/IB2017/055049 patent/WO2018042284A1/en not_active Ceased
- 2017-08-22 CN CN201780049788.7A patent/CN109564851A/zh active Pending
- 2017-08-28 JP JP2017163366A patent/JP6945392B2/ja active Active
- 2017-08-28 US US15/687,855 patent/US10236408B2/en active Active
- 2017-08-28 TW TW106129130A patent/TWI755423B/zh not_active IP Right Cessation
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2021
- 2021-09-14 JP JP2021149172A patent/JP2022002323A/ja not_active Withdrawn
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2023
- 2023-06-26 JP JP2023103991A patent/JP7596453B2/ja active Active
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