TWI755423B - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

Info

Publication number
TWI755423B
TWI755423B TW106129130A TW106129130A TWI755423B TW I755423 B TWI755423 B TW I755423B TW 106129130 A TW106129130 A TW 106129130A TW 106129130 A TW106129130 A TW 106129130A TW I755423 B TWI755423 B TW I755423B
Authority
TW
Taiwan
Prior art keywords
layer
metal oxide
material layer
light
substrate
Prior art date
Application number
TW106129130A
Other languages
English (en)
Chinese (zh)
Other versions
TW201825298A (zh
Inventor
山崎舜平
佐藤将孝
樹
谷中順平
井戶尻悟
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW201825298A publication Critical patent/TW201825298A/zh
Application granted granted Critical
Publication of TWI755423B publication Critical patent/TWI755423B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83052—Detaching layer connectors, e.g. after testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking
    • H01L2924/35121—Peeling or delaminating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
TW106129130A 2016-08-31 2017-08-28 半導體裝置的製造方法 TWI755423B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2016-170379 2016-08-31
JP2016170379 2016-08-31
JP2016-173346 2016-09-06
JP2016173346 2016-09-06
JP2016-198948 2016-10-07
JP2016198948 2016-10-07
JP2016233445 2016-11-30
JP2016-233445 2016-11-30

Publications (2)

Publication Number Publication Date
TW201825298A TW201825298A (zh) 2018-07-16
TWI755423B true TWI755423B (zh) 2022-02-21

Family

ID=61243347

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106129130A TWI755423B (zh) 2016-08-31 2017-08-28 半導體裝置的製造方法

Country Status (6)

Country Link
US (1) US10236408B2 (enExample)
JP (3) JP6945392B2 (enExample)
KR (1) KR102425705B1 (enExample)
CN (1) CN109564851A (enExample)
TW (1) TWI755423B (enExample)
WO (1) WO2018042284A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102389537B1 (ko) 2016-07-29 2022-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
JP6981812B2 (ja) 2016-08-31 2021-12-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10369664B2 (en) 2016-09-23 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR102515871B1 (ko) 2016-10-07 2023-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
US10170600B2 (en) * 2017-01-12 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11133491B2 (en) 2017-03-16 2021-09-28 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device and semiconductor device
JP6980421B2 (ja) * 2017-06-16 2021-12-15 株式会社ディスコ ウエーハの加工方法
WO2019171555A1 (ja) * 2018-03-08 2019-09-12 シャープ株式会社 可撓性表示装置の製造方法、および非可撓性基板
US10964664B2 (en) 2018-04-20 2021-03-30 Invensas Bonding Technologies, Inc. DBI to Si bonding for simplified handle wafer
WO2019215833A1 (ja) * 2018-05-09 2019-11-14 堺ディスプレイプロダクト株式会社 フレキシブル発光デバイスの製造方法および製造装置
JP7410935B2 (ja) 2018-05-24 2024-01-10 ザ リサーチ ファウンデーション フォー ザ ステイト ユニバーシティー オブ ニューヨーク 容量性センサ
CN108807671A (zh) * 2018-08-02 2018-11-13 昆山国显光电有限公司 柔性显示屏的制备方法及制备柔性显示屏用复合基板
JP7128697B2 (ja) * 2018-09-19 2022-08-31 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
US11138360B2 (en) 2018-10-31 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with filler cell region, method of generating layout diagram and system for same
KR102696647B1 (ko) * 2018-11-09 2024-08-22 삼성디스플레이 주식회사 플렉서블 표시 장치 및 그 제조 방법
US11061315B2 (en) 2018-11-15 2021-07-13 Globalfoundries U.S. Inc. Hybrid optical and EUV lithography
CN109599421B (zh) * 2018-11-21 2020-06-02 武汉华星光电半导体显示技术有限公司 Oled显示装置及其制作方法
CN113169058A (zh) * 2018-11-29 2021-07-23 昭和电工材料株式会社 半导体装置的制造方法及临时固定材料用层叠膜
JP7131465B2 (ja) * 2019-04-03 2022-09-06 株式会社デンソー 車両制御装置
KR20220009991A (ko) * 2019-05-16 2022-01-25 드래곤플라이 에너지 코퍼레이션 전기화학 전지의 건조 분말 코팅 층들을 위한 시스템들 및 방법들
CN110383460B (zh) * 2019-05-21 2021-11-30 京东方科技集团股份有限公司 柔性电子基板的制作方法及基板结构
KR102456122B1 (ko) * 2019-08-14 2022-10-19 한양대학교 산학협력단 플렉서블 장치의 제조방법
CN110550869B (zh) * 2019-10-12 2020-09-01 北京大学 一种离子注入辅助制备石墨烯玻璃的方法以及一种石墨烯玻璃
CN111081743B (zh) * 2019-12-11 2022-06-07 深圳市华星光电半导体显示技术有限公司 显示面板的制造方法及显示面板
JP7549515B2 (ja) * 2019-12-17 2024-09-11 日本放送協会 導電領域の形成方法、及び薄膜トランジスタの製造方法
JP6900540B1 (ja) * 2020-04-08 2021-07-07 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法
CN111554135B (zh) * 2020-05-28 2021-10-15 滁州学院 一种创新创业教育互动多媒体装置
CN112420742B (zh) * 2020-11-05 2022-11-25 深圳市华星光电半导体显示技术有限公司 柔性显示装置及制备方法
WO2023122513A1 (en) * 2021-12-20 2023-06-29 Adeia Semiconductor Bonding Technologies Inc. Direct bonding and debonding of elements
JP7541093B2 (ja) * 2021-12-21 2024-08-27 武漢華星光電半導体顕示技術有限公司 ディスプレイパネル、ディスプレイモジュール、および移動端末
US20230200122A1 (en) * 2021-12-22 2023-06-22 Wuhan China Star Optoelectronics Semicondluctor Display Technology Co., Ltd. Display panel, display module, and mobile terminal
CN115513083B (zh) * 2022-09-29 2023-08-25 惠科股份有限公司 测试承载基板及膜厚监控装置
CN119436747A (zh) * 2023-07-31 2025-02-14 宁德时代新能源科技股份有限公司 电池烘烤方法、装置和可读存储介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070004233A1 (en) * 2005-06-30 2007-01-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20150125646A1 (en) * 2013-11-05 2015-05-07 Espci Innov Self-Healing Thermally Conductive Polymer Materials
US20160172244A1 (en) * 2014-12-11 2016-06-16 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing electronic device comprising a resin substrate and an electronic component

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
EP0741802A4 (en) 1994-03-08 1997-05-21 Rgc Mineral Sands Ltd Leaching of titaniferous materials
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
CN1495523A (zh) 1996-08-27 2004-05-12 ������������ʽ���� 转移方法和有源矩阵基板的制造方法
US6127199A (en) 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
KR100304161B1 (ko) 1996-12-18 2001-11-30 미다라이 후지오 반도체부재의제조방법
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JP4126747B2 (ja) 1998-02-27 2008-07-30 セイコーエプソン株式会社 ３次元デバイスの製造方法
US6335479B1 (en) 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module
JP3679943B2 (ja) 1999-03-02 2005-08-03 大日本印刷株式会社 パターン形成体の製造方法
US6468638B2 (en) 1999-03-16 2002-10-22 Alien Technology Corporation Web process interconnect in electronic assemblies
JP2001019933A (ja) 1999-07-09 2001-01-23 Dow Corning Toray Silicone Co Ltd シリコーン系接着性シート、およびその製造方法
JP4627843B2 (ja) 1999-07-22 2011-02-09 株式会社半導体エネルギー研究所 半導体装置
FR2817395B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003017667A (ja) 2001-06-29 2003-01-17 Canon Inc 部材の分離方法及び分離装置
US6814832B2 (en) 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
TW554398B (en) 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
JP4785300B2 (ja) 2001-09-07 2011-10-05 株式会社半導体エネルギー研究所 電気泳動型表示装置、表示装置、及び電子機器
JP2003098977A (ja) 2001-09-19 2003-04-04 Sony Corp 素子の転写方法、素子の配列方法、及び画像表示装置の製造方法
JP4236081B2 (ja) 2001-10-16 2009-03-11 大日本印刷株式会社 パターン形成体の製造方法
JP2003190943A (ja) 2001-12-21 2003-07-08 Kazuo Takaku 三次機能水の製造方法及び三次機能水
US6885146B2 (en) 2002-03-14 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates
EP1363319B1 (en) 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Method of transferring an object and method of manufacturing a semiconductor device
JP2004047791A (ja) 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置
US7078737B2 (en) 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
JP5022552B2 (ja) 2002-09-26 2012-09-12 セイコーエプソン株式会社 電気光学装置の製造方法及び電気光学装置
JP2004140267A (ja) 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
KR101033797B1 (ko) 2003-01-15 2011-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법
JP4151421B2 (ja) 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
EP2273307B1 (en) 2003-03-27 2012-08-22 E Ink Corporation Electrophoretic medium for an electrophoretic display
US7575965B2 (en) 2003-12-02 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Method for forming large area display wiring by droplet discharge, and method for manufacturing electronic device and semiconductor device
US7084045B2 (en) 2003-12-12 2006-08-01 Seminconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4100351B2 (ja) 2004-02-09 2008-06-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JP2005239042A (ja) 2004-02-27 2005-09-08 Nippon Seiki Co Ltd 車両用情報表示装置及び車両用情報表示方法
JP2006049800A (ja) 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
US7052924B2 (en) 2004-03-29 2006-05-30 Articulated Technologies, Llc Light active sheet and methods for making the same
US7521368B2 (en) 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20050287871A1 (en) 2004-06-25 2005-12-29 Matsushita Electric Industrial Co., Ltd. Device, method, and program for computer aided design of flexible substrates
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
US7572667B2 (en) 2006-01-20 2009-08-11 Samsung Electronics Co., Ltd. Method of forming an organic semiconductor pattern and method of manufacturing an organic thin film transistor using the same
US8173519B2 (en) 2006-03-03 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8222116B2 (en) 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2009037797A1 (ja) * 2007-09-20 2009-03-26 Sharp Kabushiki Kaisha 表示装置の製造方法及び積層構造体
JP5368014B2 (ja) 2008-06-24 2013-12-18 共同印刷株式会社 フレキシブル有機ｅｌディスプレイの製造方法
JP5470633B2 (ja) * 2008-12-11 2014-04-16 国立大学法人東北大学 光電変換素子及び太陽電池
JP5355618B2 (ja) 2011-03-10 2013-11-27 三星ディスプレイ株式會社 可撓性表示装置及びこの製造方法
KR101423907B1 (ko) * 2011-11-22 2014-07-29 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
JP6099262B2 (ja) 2012-06-04 2017-03-22 達彦 山田 水分解方法および水分解装置
US9871228B2 (en) 2012-11-30 2018-01-16 Lg Display Co., Ltd. Organic light emitting device comprising flexible substrate and method for preparing thereof
WO2014129519A1 (en) * 2013-02-20 2014-08-28 Semiconductor Energy Laboratory Co., Ltd. Peeling method, semiconductor device, and peeling apparatus
CN109273622B (zh) * 2013-08-06 2021-03-12 株式会社半导体能源研究所 剥离方法
KR20150029429A (ko) 2013-09-10 2015-03-18 삼성디스플레이 주식회사 표시 패널 및 그의 제조 방법
CN106663391B (zh) 2013-12-02 2019-09-03 株式会社半导体能源研究所 显示装置及其制造方法
US9427949B2 (en) * 2013-12-03 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and stack manufacturing apparatus
WO2015087192A1 (en) * 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
US9397149B2 (en) * 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP3125308A4 (en) 2014-03-25 2017-11-22 Kaneka Corporation Method for manufacturing compound semiconductor solar cell
JP6354338B2 (ja) 2014-05-30 2018-07-11 東レ株式会社 積層体、積層体の製造方法、及びこれを用いたフレキシブルデバイスの製造方法
US20170137571A1 (en) * 2014-06-04 2017-05-18 Ube Industries, Ltd. Method for producing polyimide film
TWI695531B (zh) 2014-07-16 2020-06-01 日商Ｌａｎｔｅｃｈｎｉｃａｌ服務股份有限公司 薄形基板及其製造方法、以及基板之搬送方法
EP3187927B1 (en) * 2014-08-28 2022-06-29 Sony Group Corporation Display device and lighting device
JP2016086158A (ja) * 2014-10-22 2016-05-19 セントラル硝子株式会社 ウエハ加工用積層体、ウエハ加工用仮接着材および薄型ウエハの製造方法
US10115747B2 (en) * 2015-01-06 2018-10-30 Sharp Kabushiki Kaisha Method of producing component board
CN105374829B (zh) * 2015-12-01 2018-03-27 上海天马有机发光显示技术有限公司 一种柔性显示基板及其制备方法
TWI753868B (zh) 2016-08-05 2022-02-01 日商半導體能源研究所股份有限公司 剝離方法、顯示裝置、顯示模組及電子裝置
TW201808628A (zh) 2016-08-09 2018-03-16 Semiconductor Energy Lab 半導體裝置的製造方法
TWI730017B (zh) 2016-08-09 2021-06-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置
JP6981812B2 (ja) 2016-08-31 2021-12-17 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070004233A1 (en) * 2005-06-30 2007-01-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20150125646A1 (en) * 2013-11-05 2015-05-07 Espci Innov Self-Healing Thermally Conductive Polymer Materials
US20160172244A1 (en) * 2014-12-11 2016-06-16 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing electronic device comprising a resin substrate and an electronic component

Also Published As

Publication number Publication date
KR102425705B1 (ko) 2022-07-28
WO2018042284A1 (en) 2018-03-08
JP2022002323A (ja) 2022-01-06
JP7596453B2 (ja) 2024-12-09
JP2023115130A (ja) 2023-08-18
KR20190042695A (ko) 2019-04-24
JP6945392B2 (ja) 2021-10-06
JP2018093169A (ja) 2018-06-14
TW201825298A (zh) 2018-07-16
US20180061638A1 (en) 2018-03-01
CN109564851A (zh) 2019-04-02
US10236408B2 (en) 2019-03-19

Similar Documents

Publication Publication Date Title
TWI755423B (zh) 半導體裝置的製造方法
KR102554691B1 (ko) 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
JP7705988B2 (ja) 半導体装置の作製方法
TWI801357B (zh) 半導體裝置的製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees