KR102425705B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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KR102425705B1
KR102425705B1 KR1020197009196A KR20197009196A KR102425705B1 KR 102425705 B1 KR102425705 B1 KR 102425705B1 KR 1020197009196 A KR1020197009196 A KR 1020197009196A KR 20197009196 A KR20197009196 A KR 20197009196A KR 102425705 B1 KR102425705 B1 KR 102425705B1
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layer
material layer
metal oxide
light
resin layer
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KR20190042695A (ko
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슌페이 야마자키
šœ페이 야마자키
마사타카 사토
나오키 이케자와
준페이 야나카
사토루 이도지리
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L27/1266—
    • H01L29/66969—
    • H01L31/1896—
    • H01L51/003—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83052—Detaching layer connectors, e.g. after testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking
    • H01L2924/35121—Peeling or delaminating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020197009196A 2016-08-31 2017-08-22 반도체 장치의 제작 방법 Active KR102425705B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JPJP-P-2016-170379 2016-08-31
JP2016170379 2016-08-31
JPJP-P-2016-173346 2016-09-06
JP2016173346 2016-09-06
JPJP-P-2016-198948 2016-10-07
JP2016198948 2016-10-07
JP2016233445 2016-11-30
JPJP-P-2016-233445 2016-11-30
PCT/IB2017/055049 WO2018042284A1 (en) 2016-08-31 2017-08-22 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
KR20190042695A KR20190042695A (ko) 2019-04-24
KR102425705B1 true KR102425705B1 (ko) 2022-07-28

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US (1) US10236408B2 (enExample)
JP (3) JP6945392B2 (enExample)
KR (1) KR102425705B1 (enExample)
CN (1) CN109564851A (enExample)
TW (1) TWI755423B (enExample)
WO (1) WO2018042284A1 (enExample)

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KR102389537B1 (ko) 2016-07-29 2022-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
JP6981812B2 (ja) 2016-08-31 2021-12-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10369664B2 (en) 2016-09-23 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR102515871B1 (ko) 2016-10-07 2023-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판
US10170600B2 (en) * 2017-01-12 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11133491B2 (en) 2017-03-16 2021-09-28 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device and semiconductor device
JP6980421B2 (ja) * 2017-06-16 2021-12-15 株式会社ディスコ ウエーハの加工方法
WO2019171555A1 (ja) * 2018-03-08 2019-09-12 シャープ株式会社 可撓性表示装置の製造方法、および非可撓性基板
US10964664B2 (en) 2018-04-20 2021-03-30 Invensas Bonding Technologies, Inc. DBI to Si bonding for simplified handle wafer
WO2019215833A1 (ja) * 2018-05-09 2019-11-14 堺ディスプレイプロダクト株式会社 フレキシブル発光デバイスの製造方法および製造装置
JP7410935B2 (ja) 2018-05-24 2024-01-10 ザ リサーチ ファウンデーション フォー ザ ステイト ユニバーシティー オブ ニューヨーク 容量性センサ
CN108807671A (zh) * 2018-08-02 2018-11-13 昆山国显光电有限公司 柔性显示屏的制备方法及制备柔性显示屏用复合基板
JP7128697B2 (ja) * 2018-09-19 2022-08-31 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
US11138360B2 (en) 2018-10-31 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with filler cell region, method of generating layout diagram and system for same
KR102696647B1 (ko) * 2018-11-09 2024-08-22 삼성디스플레이 주식회사 플렉서블 표시 장치 및 그 제조 방법
US11061315B2 (en) 2018-11-15 2021-07-13 Globalfoundries U.S. Inc. Hybrid optical and EUV lithography
CN109599421B (zh) * 2018-11-21 2020-06-02 武汉华星光电半导体显示技术有限公司 Oled显示装置及其制作方法
CN113169058A (zh) * 2018-11-29 2021-07-23 昭和电工材料株式会社 半导体装置的制造方法及临时固定材料用层叠膜
JP7131465B2 (ja) * 2019-04-03 2022-09-06 株式会社デンソー 車両制御装置
KR20220009991A (ko) * 2019-05-16 2022-01-25 드래곤플라이 에너지 코퍼레이션 전기화학 전지의 건조 분말 코팅 층들을 위한 시스템들 및 방법들
CN110383460B (zh) * 2019-05-21 2021-11-30 京东方科技集团股份有限公司 柔性电子基板的制作方法及基板结构
KR102456122B1 (ko) * 2019-08-14 2022-10-19 한양대학교 산학협력단 플렉서블 장치의 제조방법
CN110550869B (zh) * 2019-10-12 2020-09-01 北京大学 一种离子注入辅助制备石墨烯玻璃的方法以及一种石墨烯玻璃
CN111081743B (zh) * 2019-12-11 2022-06-07 深圳市华星光电半导体显示技术有限公司 显示面板的制造方法及显示面板
JP7549515B2 (ja) * 2019-12-17 2024-09-11 日本放送協会 導電領域の形成方法、及び薄膜トランジスタの製造方法
JP6900540B1 (ja) * 2020-04-08 2021-07-07 信越エンジニアリング株式会社 ワーク分離装置及びワーク分離方法
CN111554135B (zh) * 2020-05-28 2021-10-15 滁州学院 一种创新创业教育互动多媒体装置
CN112420742B (zh) * 2020-11-05 2022-11-25 深圳市华星光电半导体显示技术有限公司 柔性显示装置及制备方法
WO2023122513A1 (en) * 2021-12-20 2023-06-29 Adeia Semiconductor Bonding Technologies Inc. Direct bonding and debonding of elements
JP7541093B2 (ja) * 2021-12-21 2024-08-27 武漢華星光電半導体顕示技術有限公司 ディスプレイパネル、ディスプレイモジュール、および移動端末
US20230200122A1 (en) * 2021-12-22 2023-06-22 Wuhan China Star Optoelectronics Semicondluctor Display Technology Co., Ltd. Display panel, display module, and mobile terminal
CN115513083B (zh) * 2022-09-29 2023-08-25 惠科股份有限公司 测试承载基板及膜厚监控装置
CN119436747A (zh) * 2023-07-31 2025-02-14 宁德时代新能源科技股份有限公司 电池烘烤方法、装置和可读存储介质

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