JP2018093169A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP2018093169A JP2018093169A JP2017163366A JP2017163366A JP2018093169A JP 2018093169 A JP2018093169 A JP 2018093169A JP 2017163366 A JP2017163366 A JP 2017163366A JP 2017163366 A JP2017163366 A JP 2017163366A JP 2018093169 A JP2018093169 A JP 2018093169A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- material layer
- light
- metal oxide
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 384
- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 229920005989 resin Polymers 0.000 claims abstract description 539
- 239000011347 resin Substances 0.000 claims abstract description 539
- 239000000758 substrate Substances 0.000 claims abstract description 425
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 412
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 402
- 239000000463 material Substances 0.000 claims abstract description 258
- 238000000926 separation method Methods 0.000 claims abstract description 89
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 85
- 239000001301 oxygen Substances 0.000 claims abstract description 80
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 74
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000001257 hydrogen Substances 0.000 claims abstract description 71
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910001868 water Inorganic materials 0.000 claims abstract description 52
- 229920001721 polyimide Polymers 0.000 claims abstract description 29
- 239000004642 Polyimide Substances 0.000 claims abstract description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 254
- 238000010438 heat treatment Methods 0.000 claims description 86
- 229910052751 metal Inorganic materials 0.000 claims description 85
- 239000002184 metal Substances 0.000 claims description 84
- 238000009832 plasma treatment Methods 0.000 claims description 45
- 239000007788 liquid Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 37
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 37
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 36
- 239000012298 atmosphere Substances 0.000 claims description 33
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 32
- 229910052719 titanium Inorganic materials 0.000 claims description 31
- 239000010936 titanium Substances 0.000 claims description 31
- 239000011701 zinc Substances 0.000 claims description 26
- 238000002834 transmittance Methods 0.000 claims description 24
- 230000001678 irradiating effect Effects 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000002244 precipitate Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 1606
- 239000010408 film Substances 0.000 description 280
- 230000006870 function Effects 0.000 description 97
- 239000000523 sample Substances 0.000 description 78
- 239000004973 liquid crystal related substance Substances 0.000 description 73
- 230000002829 reductive effect Effects 0.000 description 65
- 230000008569 process Effects 0.000 description 46
- 239000012790 adhesive layer Substances 0.000 description 40
- 239000011521 glass Substances 0.000 description 32
- 238000012545 processing Methods 0.000 description 29
- 238000011282 treatment Methods 0.000 description 29
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 26
- 238000005401 electroluminescence Methods 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 23
- 238000003825 pressing Methods 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 230000032258 transport Effects 0.000 description 19
- 239000009719 polyimide resin Substances 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 239000012535 impurity Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 14
- 150000002431 hydrogen Chemical class 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 14
- 238000005499 laser crystallization Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 238000000576 coating method Methods 0.000 description 12
- 230000003068 static effect Effects 0.000 description 12
- 229920000178 Acrylic resin Polymers 0.000 description 11
- 239000004925 Acrylic resin Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 238000005192 partition Methods 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 238000004891 communication Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- 239000000428 dust Substances 0.000 description 9
- 230000005611 electricity Effects 0.000 description 9
- 230000005669 field effect Effects 0.000 description 9
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 206010034972 Photosensitivity reaction Diseases 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 229920001940 conductive polymer Polymers 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 229910003437 indium oxide Inorganic materials 0.000 description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- 239000002105 nanoparticle Substances 0.000 description 7
- 230000036211 photosensitivity Effects 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 239000004071 soot Substances 0.000 description 6
- 239000013585 weight reducing agent Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910001930 tungsten oxide Inorganic materials 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 238000007687 exposure technique Methods 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- 239000003550 marker Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 239000005060 rubber Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000001962 electrophoresis Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 230000007723 transport mechanism Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 206010052128 Glare Diseases 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003098 cholesteric effect Effects 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 229920006122 polyamide resin Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BCJIMAHNJOIWKQ-UHFFFAOYSA-N 4-[(1,3-dioxo-2-benzofuran-4-yl)oxy]-2-benzofuran-1,3-dione Chemical compound O=C1OC(=O)C2=C1C=CC=C2OC1=CC=CC2=C1C(=O)OC2=O BCJIMAHNJOIWKQ-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910014033 C-OH Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910014570 C—OH Inorganic materials 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000005264 High molar mass liquid crystal Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000013032 photocatalytic reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920006350 polyacrylonitrile resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83052—Detaching layer connectors, e.g. after testing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
- H01L2924/35121—Peeling or delaminating
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
【解決手段】基板上に第1の材料層を形成する工程、第1の材料層上に第2の材料層を形成する工程、及び、第1の材料層と第2の材料層とを分離する工程を行い、半導体装置を作製する。加えて、分離前に、第1の材料層と第2の材料層とを積層した状態で加熱することが好ましい。第1の材料層は、水素、酸素、及び水のうち一つまたは複数を有する。第1の材料層は、例えば、金属酸化物を有する。第2の材料層は、樹脂(例えば、ポリイミド、アクリル)を有する。第1の材料層と第2の材料層とは、水素結合が切断されることにより分離する。また、加熱により、第1の材料層と第2の材料層との界面または界面近傍に析出した水に光が照射されることで、第1の材料層と第2の材料層とが分離する。
【選択図】図2
Description
本実施の形態では、本発明の一態様の剥離方法及び表示装置の作製方法について図1〜図23を用いて説明する。
まず、作製基板14上に、金属酸化物層20を形成する(図5(A1))。または、作製基板14上に、金属層19と金属酸化物層20とを積層する(図5(A2))。
次に、本実施の形態の表示装置の作製方法例について説明する。先に説明した剥離方法と同様の部分について、説明を省略することがある。
図12(A)は、表示装置10Aの上面図である。図12(B)、(C)は、それぞれ、表示装置10Aの表示部381の断面図及びFPC372との接続部の断面図の一例である。
まず、上記剥離方法と同様に、作製基板14上に、金属酸化物層20から絶縁層31までを形成する(図13(A))。
作製方法例2(図14(D))では、接着層99が、金属酸化物層20と絶縁層31とが接している部分、及び金属酸化物層92と絶縁層95とが接している部分の双方と重ねて設けられる場合を示した。
図21(A)は、表示装置10Bの上面図である。図21(B)は、表示装置10Bの表示部381の断面図及びFPC372との接続部の断面図の一例である。
次に、図22を用いて、積層体の作製装置の一例を説明する。図22に示す積層体の作製装置は、本実施の形態の剥離方法を用いて作製基板から被剥離層を剥離し、被剥離層を別の基板に転置することができる。図22に示す積層体の作製装置を用いて、半導体装置、表示装置等の積層体を作製することができる。
本実施の形態では、本発明の一態様の表示装置の作製方法について図24〜図28を用いて説明する。
図28(A)は、表示装置10Cの上面図である。図28(B)、(C)は、それぞれ、表示装置10Cの表示部381の断面図及びFPC372との接続部の断面図の一例である。
本実施の形態では、本発明の一態様を適用して作製することができる表示装置及び入出力装置について図29〜図38を用いて説明する。
本発明の一態様では、タッチセンサが搭載された表示装置(以下、入出力装置、タッチパネルとも記す)を作製することができる。
本実施の形態では、本発明の一態様で開示されるトランジスタに用いることができる金属酸化物について説明する。以下では特に、金属酸化物とCAC(Cloud−Aligned Composite)−OSの詳細について説明する。
本実施の形態では、本発明の一態様の表示モジュール及び電子機器について説明する。
図5及び図6を用いて、評価1の試料の作製方法について説明する。
次に、本発明の一態様が適用された積層構造(試料A)と、比較の積層構造(比較試料B)とを作製し、作製基板から樹脂層を剥離した結果について説明する。
次に、本発明の一態様が適用された積層構造(試料C)と、比較の積層構造(比較試料D)とを作製し、作製基板から樹脂層を剥離した結果について説明する。
図5及び図6を用いて、本実施例の試料の作製方法について説明する。
本実施例で作製したフレキシブルOLEDディスプレイは、表示領域が対角8.67インチ、有効画素数が1080×1920、精細度が254ppi、開口率が46.0%である、アクティブマトリクス型の有機ELディスプレイである。フレキシブルOLEDディスプレイには、スキャンドライバが内蔵されており、COFを用いてソースドライバが外付けされている。
10B 表示装置
10C 表示装置
13 接着層
14 作製基板
15 遮光層
16 領域
17 領域
18 異物
19 金属層
20 金属酸化物層
21 液体供給機構
22 基板
23 樹脂層
23a 樹脂層
23b 樹脂層
24 第1の層
25 被剥離層
26 線状ビーム
27 加工領域
28 接着層
29 基板
31 絶縁層
31a 絶縁層
31b 絶縁層
32 絶縁層
33 絶縁層
34 絶縁層
35 絶縁層
40 トランジスタ
41 導電層
43a 導電層
43b 導電層
43c 導電層
44 金属酸化物層
45 導電層
49 トランジスタ
55 レーザ光
56 積層体
56a 被剥離体
56b 支持体
57a 第1の層
57b 第2の層
58 作製基板
59 積層体
60 発光素子
61 導電層
62 EL層
63 導電層
64 切れ目
65 器具
74 絶縁層
75 保護層
75a 基板
75b 接着層
76 接続体
80 トランジスタ
81 導電層
82 絶縁層
83 金属酸化物層
84 絶縁層
85 導電層
86a 導電層
86b 導電層
86c 導電層
91 作製基板
92 金属酸化物層
93 樹脂層
95 絶縁層
96 隔壁
97 着色層
98 遮光層
99 接着層
112 液晶層
113 電極
115 絶縁層
117 絶縁層
121 絶縁層
131 着色層
132 遮光層
133a 配向膜
133b 配向膜
134 着色層
135 偏光板
140 トランジスタ
141 接着層
142 接着層
162a チャネル領域
162b 低抵抗領域
163 絶縁層
164 導電層
165 絶縁層
166 絶縁層
167a 導電層
167b 導電層
170 発光素子
180 液晶素子
191 電極
192 EL層
193 電極
194 絶縁層
201 トランジスタ
203 トランジスタ
204 接続部
205 トランジスタ
206 トランジスタ
207 接続部
211 絶縁層
212 絶縁層
213 絶縁層
214 絶縁層
215 絶縁層
216 絶縁層
217 絶縁層
220 絶縁層
220a 絶縁層
220b 絶縁層
221a 導電層
221b 導電層
222a 導電層
222b 導電層
223 導電層
224 導電層
225 絶縁層
226 被覆膜
227 レンズ
228 導電層
231 半導体層
232 絶縁層
233 拡散フィルム
234a 導電層
234b 導電層
234c 絶縁層
234d 絶縁層
235 基板
242 接続層
243 接続体
252 接続部
300A 表示装置
310A 入出力装置
310B 入出力装置
311a 電極
311b 電極
311c 電極
351 基板
361 基板
362 表示部
364 回路
365 配線
372 FPC
373 IC
381 表示部
382 駆動回路部
451 開口
600 テープ
601 支持体
602 テープリール
604 方向転換ローラ
606 押圧ローラ
606a 円筒
606b 円柱
607 方向転換ローラ
609 キャリアプレート
610 レーザ照射ユニット
610a レーザ光
610b レーザ光
610c レーザ光
610d レーザ光
610e 線状ビーム
613 リール
614 乾燥機構
617 ローラ
620 イオナイザ
630 基板反転ユニット
631 ガイドローラ
632 ガイドローラ
633 ガイドローラ
634 ガイドローラ
635 光学系
639 イオナイザ
640 加工領域
641 基板ロードカセット
642 基板アンロードカセット
643 搬送ローラ
644 搬送ローラ
645 搬送ローラ
646 搬送ローラ
650 ミラー
659 液体供給機構
660 エキシマレーザ装置
665 ガイドローラ
666 ガイドローラ
670 分離テープ
671 支持体
672 テープリール
673 リール
674 ガイドローラ
675 押圧ローラ
676 方向転換ローラ
677 ガイドローラ
678 ガイドローラ
679 ガイドローラ
680 レンズ
683 リール
800 携帯情報端末
801 筐体
802 筐体
803 表示部
805 ヒンジ部
810 携帯情報端末
811 筐体
812 表示部
813 操作ボタン
814 外部接続ポート
815 スピーカ
816 マイク
817 カメラ
820 カメラ
821 筐体
822 表示部
823 操作ボタン
824 シャッターボタン
826 レンズ
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8005 FPC
8006 表示パネル
8009 フレーム
8010 プリント基板
8011 バッテリ
8015 発光部
8016 受光部
8017a 導光部
8017b 導光部
8018 光
9000 筐体
9001 表示部
9003 スピーカ
9005 操作キー
9006 接続端子
9007 センサ
9008 マイクロフォン
9055 ヒンジ
9200 携帯情報端末
9201 携帯情報端末
9202 携帯情報端末
Claims (28)
- 基板上に第1の材料層を形成する工程、
前記第1の材料層上に第2の材料層を形成する工程、及び、
前記第1の材料層と前記第2の材料層とを分離する工程を有し、
前記第1の材料層は、水素、酸素、及び水のうち一つまたは複数を有し、
前記第2の材料層は、樹脂を有し、
前記第1の材料層と前記第2の材料層とは、水素結合が切断されることにより分離し、
前記水素結合の切断は、光が照射されることにより行われる、半導体装置の作製方法。 - 請求項1において、
前記第1の材料層と前記第2の材料層とは、水素結合が切断されることにより、第1の材料層と第2の材料層との界面またはその近傍で分離する、半導体装置の作製方法。 - 基板上に第1の材料層を形成する工程、
前記第1の材料層上に第2の材料層を形成する工程、及び、
前記第1の材料層と前記第2の材料層とを光を用いて分離する工程を有し、
前記第1の材料層は、水素、酸素、及び水のうち一つまたは複数を有し、
前記第2の材料層は、樹脂を有し、
前記第1の材料層と前記第2の材料層とは、水素結合が切断されることにより分離し、
前記光として、レーザ光を用い、
前記水素結合の切断は、前記レーザ光が、前記第1の材料層と前記第2の材料層との界面またはその近傍に照射されることにより行われる、半導体装置の作製方法。 - 基板上に第1の材料層を形成する工程、
前記第1の材料層上に第2の材料層を形成する工程、
前記第1の材料層と前記第2の材料層とが積層された状態で加熱される工程、及び、
前記第1の材料層と前記第2の材料層とを分離する工程を有し、
前記第1の材料層は、水素、酸素、及び水のうち一つまたは複数を有し、
前記第2の材料層は、樹脂を有し、
前記加熱される工程では、前記第1の材料層と前記第2の材料層との界面または界面近傍に水が析出し、
前記分離する工程では、前記界面または前記界面近傍に存在する水に光が照射されることにより、前記第1の材料層と前記第2の材料層とが分離する、半導体装置の作製方法。 - 請求項1乃至4のいずれか一において、
前記光は、波長領域が180nm以上450nm以下を有するように照射される、半導体装置の作製方法。 - 請求項1乃至5のいずれか一において、
前記光は、波長領域が308nm又はその近傍を有するように照射される、半導体装置の作製方法。 - 請求項1乃至6のいずれか一において、
前記光は、レーザ装置を用いて照射される、半導体装置の作製方法。 - 請求項1乃至7のいずれか一において、
前記光は、線状レーザ装置を用いて照射される、半導体装置の作製方法。 - 請求項1乃至8のいずれか一において、
前記光は、300mJ/cm2以上360mJ/cm2以下のエネルギー密度で照射される、半導体装置の作製方法。 - 請求項1乃至9のいずれか一において、
前記第1の材料層は、前記第2の材料層との密着性が前記基板よりも低いように形成される、半導体装置の作製方法。 - 請求項1乃至10のいずれか一において、
前記第1の材料層は、チタン、モリブデン、アルミニウム、タングステン、シリコン、インジウム、亜鉛、ガリウム、タンタル、及び錫のうち一つまたは複数を有するように形成される、半導体装置の作製方法。 - 請求項1乃至11のいずれか一において、
前記第1の材料層は、チタン及び酸化チタンのうち一方または双方を有するように形成される、半導体装置の作製方法。 - 請求項1乃至12のいずれか一において、
前記第1の材料層は、チタンと酸化チタンとの積層構造を有するように形成される、半導体装置の作製方法。 - 請求項1乃至13のいずれか一において、
前記第2の材料層は、厚さが0.1μm以上5μm以下の領域を有するように形成される、半導体装置の作製方法。 - 請求項1乃至14のいずれか一において、
前記第2の材料層は、構造式(100)で表される化合物の残基を有するように形成される、半導体装置の作製方法。
- 請求項1乃至15のいずれか一において、
前記第1の材料層を形成する工程では、
前記基板上に金属層を形成し、
前記金属層の表面にプラズマ処理を行うことで、金属酸化物層を形成する、半導体装置の作製方法。 - 請求項16において、
前記プラズマ処理では、酸素または水蒸気のうち一方または双方を含む雰囲気に、前記金属層の表面を曝す、半導体装置の作製方法。 - 請求項1乃至17のいずれか一において、
前記第1の材料層と前記第2の材料層とを分離する工程は、分離界面に液体を供給しながら行う、半導体装置の作製方法。 - 請求項18において、
前記液体は水を含む、半導体装置の作製方法。 - 請求項1乃至19のいずれか一において、
前記第2の材料層は、波長450nm以上700nm以下の範囲の光の透過率の平均値が70%以上であるように形成される、半導体装置の作製方法。 - 請求項1乃至20のいずれか一において、
前記第2の材料層は、アクリルを有する、半導体装置の作製方法。 - 請求項1乃至20のいずれか一において、
前記第2の材料層は、ポリイミドを有する、半導体装置の作製方法。 - 請求項1乃至12のいずれか一において、
前記基板、前記第1の材料層、及び前記第2の材料層の積層構造の、前記光の吸収率は、80%以上100%以下である、半導体装置の作製方法。 - 基板上に、金属酸化物層を形成し、
前記金属酸化物層上に、厚さが0.1μm以上5μm以下の領域を有するように樹脂層を形成し、
前記樹脂層上に、チャネル形成領域に金属酸化物を有するトランジスタを形成し、
光を照射することで、前記金属酸化物層と前記樹脂層とを分離する、半導体装置の作製方法。 - 請求項24において、
前記基板上に、金属層を形成し、
前記金属層の表面にプラズマ処理を行うことで、前記金属酸化物層を形成する、半導体装置の作製方法。 - 請求項25において、
前記プラズマ処理では、酸素または水蒸気のうち一方または双方を含む雰囲気に、前記金属層の表面を曝す、半導体装置の作製方法。 - 請求項24乃至26のいずれか一において、
前記樹脂層は、波長450nm以上700nm以下の範囲の光の透過率の平均値が70%以上であるように形成される、半導体装置の作製方法。 - 請求項24乃至27のいずれか一において、
線状レーザを用いて、前記基板側から、前記金属酸化物層と前記樹脂層との界面またはその近傍に光を照射する、半導体装置の作製方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021149172A JP2022002323A (ja) | 2016-08-31 | 2021-09-14 | 半導体装置の作製方法 |
JP2023103991A JP2023115130A (ja) | 2016-08-31 | 2023-06-26 | 半導体装置の作製方法 |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016170379 | 2016-08-31 | ||
JP2016170379 | 2016-08-31 | ||
JP2016173346 | 2016-09-06 | ||
JP2016173346 | 2016-09-06 | ||
JP2016198948 | 2016-10-07 | ||
JP2016198948 | 2016-10-07 | ||
JP2016233445 | 2016-11-30 | ||
JP2016233445 | 2016-11-30 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021149172A Division JP2022002323A (ja) | 2016-08-31 | 2021-09-14 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018093169A true JP2018093169A (ja) | 2018-06-14 |
JP2018093169A5 JP2018093169A5 (ja) | 2020-10-08 |
JP6945392B2 JP6945392B2 (ja) | 2021-10-06 |
Family
ID=61243347
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017163366A Active JP6945392B2 (ja) | 2016-08-31 | 2017-08-28 | 半導体装置の作製方法 |
JP2021149172A Withdrawn JP2022002323A (ja) | 2016-08-31 | 2021-09-14 | 半導体装置の作製方法 |
JP2023103991A Pending JP2023115130A (ja) | 2016-08-31 | 2023-06-26 | 半導体装置の作製方法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021149172A Withdrawn JP2022002323A (ja) | 2016-08-31 | 2021-09-14 | 半導体装置の作製方法 |
JP2023103991A Pending JP2023115130A (ja) | 2016-08-31 | 2023-06-26 | 半導体装置の作製方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10236408B2 (ja) |
JP (3) | JP6945392B2 (ja) |
KR (1) | KR102425705B1 (ja) |
CN (1) | CN109564851A (ja) |
TW (1) | TWI755423B (ja) |
WO (1) | WO2018042284A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021166274A (ja) * | 2020-04-08 | 2021-10-14 | 信越エンジニアリング株式会社 | ワーク分離装置及びワーク分離方法 |
JP7494300B2 (ja) | 2021-12-22 | 2024-06-03 | 武漢華星光電半導体顕示技術有限公司 | 表示パネル、表示モジュール、及び移動端末 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102554183B1 (ko) | 2016-07-29 | 2023-07-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기 |
US10923350B2 (en) | 2016-08-31 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
US10369664B2 (en) | 2016-09-23 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
CN117279467A (zh) * | 2016-10-07 | 2023-12-22 | 株式会社半导体能源研究所 | 玻璃衬底的清洗方法、半导体装置的制造方法及玻璃衬底 |
KR20180083253A (ko) * | 2017-01-12 | 2018-07-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
US11133491B2 (en) | 2017-03-16 | 2021-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication method of semiconductor device and semiconductor device |
JP6980421B2 (ja) * | 2017-06-16 | 2021-12-15 | 株式会社ディスコ | ウエーハの加工方法 |
WO2019171555A1 (ja) * | 2018-03-08 | 2019-09-12 | シャープ株式会社 | 可撓性表示装置の製造方法、および非可撓性基板 |
CN112042273A (zh) * | 2018-05-09 | 2020-12-04 | 堺显示器制品株式会社 | 柔性发光器件的制造方法以及制造装置 |
CN108807671A (zh) | 2018-08-02 | 2018-11-13 | 昆山国显光电有限公司 | 柔性显示屏的制备方法及制备柔性显示屏用复合基板 |
JP7128697B2 (ja) * | 2018-09-19 | 2022-08-31 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
US11138360B2 (en) | 2018-10-31 | 2021-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with filler cell region, method of generating layout diagram and system for same |
KR20200054425A (ko) * | 2018-11-09 | 2020-05-20 | 삼성디스플레이 주식회사 | 플렉서블 표시 장치 및 그 제조 방법 |
US11061315B2 (en) | 2018-11-15 | 2021-07-13 | Globalfoundries U.S. Inc. | Hybrid optical and EUV lithography |
CN109599421B (zh) * | 2018-11-21 | 2020-06-02 | 武汉华星光电半导体显示技术有限公司 | Oled显示装置及其制作方法 |
KR102609674B1 (ko) * | 2018-11-29 | 2023-12-05 | 가부시끼가이샤 레조낙 | 반도체 장치의 제조 방법 및 가고정재용 적층 필름 |
JP7131465B2 (ja) * | 2019-04-03 | 2022-09-06 | 株式会社デンソー | 車両制御装置 |
KR20220009991A (ko) | 2019-05-16 | 2022-01-25 | 드래곤플라이 에너지 코퍼레이션 | 전기화학 전지의 건조 분말 코팅 층들을 위한 시스템들 및 방법들 |
US11529802B2 (en) * | 2019-05-21 | 2022-12-20 | Beijing Boe Technology Development Co., Ltd. | Manufacturing method of flexible electronic substrate and substrate structure |
KR102456122B1 (ko) * | 2019-08-14 | 2022-10-19 | 한양대학교 산학협력단 | 플렉서블 장치의 제조방법 |
CN110550869B (zh) * | 2019-10-12 | 2020-09-01 | 北京大学 | 一种离子注入辅助制备石墨烯玻璃的方法以及一种石墨烯玻璃 |
CN111081743B (zh) * | 2019-12-11 | 2022-06-07 | 深圳市华星光电半导体显示技术有限公司 | 显示面板的制造方法及显示面板 |
CN111554135B (zh) * | 2020-05-28 | 2021-10-15 | 滁州学院 | 一种创新创业教育互动多媒体装置 |
CN112420742B (zh) * | 2020-11-05 | 2022-11-25 | 深圳市华星光电半导体显示技术有限公司 | 柔性显示装置及制备方法 |
CN115513083B (zh) * | 2022-09-29 | 2023-08-25 | 惠科股份有限公司 | 测试承载基板及膜厚监控装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007012917A (ja) * | 2005-06-30 | 2007-01-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US20150187855A1 (en) * | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2015133481A (ja) * | 2013-12-12 | 2015-07-23 | 株式会社半導体エネルギー研究所 | 剥離方法及び剥離装置 |
JP2016036005A (ja) * | 2013-12-03 | 2016-03-17 | 株式会社半導体エネルギー研究所 | 剥離装置、及び積層体の作製装置 |
US20160172244A1 (en) * | 2014-12-11 | 2016-06-16 | Panasonic Intellectual Property Management Co., Ltd. | Method for manufacturing electronic device comprising a resin substrate and an electronic component |
WO2016111197A1 (ja) * | 2015-01-06 | 2016-07-14 | シャープ株式会社 | 素子基板の製造方法 |
Family Cites Families (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
PL316118A1 (en) | 1994-03-08 | 1996-12-23 | Rgc Mineral Sands Ltd | Method of digesting titanium-bearing raw materials |
US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
CN1495523A (zh) | 1996-08-27 | 2004-05-12 | ������������ʽ���� | 转移方法和有源矩阵基板的制造方法 |
US6127199A (en) | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
SG67458A1 (en) | 1996-12-18 | 1999-09-21 | Canon Kk | Process for producing semiconductor article |
JPH1126733A (ja) | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置,アクティブマトリクス基板、液晶表示装置および電子機器 |
JP4126747B2 (ja) | 1998-02-27 | 2008-07-30 | セイコーエプソン株式会社 | 3次元デバイスの製造方法 |
US6335479B1 (en) | 1998-10-13 | 2002-01-01 | Dai Nippon Printing Co., Ltd. | Protective sheet for solar battery module, method of fabricating the same and solar battery module |
JP3679943B2 (ja) | 1999-03-02 | 2005-08-03 | 大日本印刷株式会社 | パターン形成体の製造方法 |
US6468638B2 (en) | 1999-03-16 | 2002-10-22 | Alien Technology Corporation | Web process interconnect in electronic assemblies |
JP2001019933A (ja) | 1999-07-09 | 2001-01-23 | Dow Corning Toray Silicone Co Ltd | シリコーン系接着性シート、およびその製造方法 |
US7411211B1 (en) | 1999-07-22 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
FR2817395B1 (fr) | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
TW548860B (en) | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP2003017667A (ja) | 2001-06-29 | 2003-01-17 | Canon Inc | 部材の分離方法及び分離装置 |
US6814832B2 (en) | 2001-07-24 | 2004-11-09 | Seiko Epson Corporation | Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance |
TW554398B (en) | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
JP4785300B2 (ja) | 2001-09-07 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 電気泳動型表示装置、表示装置、及び電子機器 |
JP2003098977A (ja) | 2001-09-19 | 2003-04-04 | Sony Corp | 素子の転写方法、素子の配列方法、及び画像表示装置の製造方法 |
JP4236081B2 (ja) | 2001-10-16 | 2009-03-11 | 大日本印刷株式会社 | パターン形成体の製造方法 |
US6885146B2 (en) | 2002-03-14 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates |
DE60325669D1 (de) | 2002-05-17 | 2009-02-26 | Semiconductor Energy Lab | Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements |
JP2004047791A (ja) | 2002-07-12 | 2004-02-12 | Pioneer Electronic Corp | 有機薄膜スイッチングメモリ素子及びメモリ装置 |
US7078737B2 (en) | 2002-09-02 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device |
JP5022552B2 (ja) | 2002-09-26 | 2012-09-12 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
JP2004140267A (ja) | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4373085B2 (ja) | 2002-12-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、剥離方法及び転写方法 |
CN102290422A (zh) | 2003-01-15 | 2011-12-21 | 株式会社半导体能源研究所 | 显示装置及其制造方法、剥离方法及发光装置的制造方法 |
JP4151421B2 (ja) | 2003-01-23 | 2008-09-17 | セイコーエプソン株式会社 | デバイスの製造方法 |
US7012735B2 (en) | 2003-03-27 | 2006-03-14 | E Ink Corporaiton | Electro-optic assemblies, and materials for use therein |
KR101124999B1 (ko) | 2003-12-02 | 2012-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제조 방법 |
US7084045B2 (en) | 2003-12-12 | 2006-08-01 | Seminconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP4100351B2 (ja) | 2004-02-09 | 2008-06-11 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JP2005239042A (ja) | 2004-02-27 | 2005-09-08 | Nippon Seiki Co Ltd | 車両用情報表示装置及び車両用情報表示方法 |
JP2006049800A (ja) | 2004-03-10 | 2006-02-16 | Seiko Epson Corp | 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器 |
US7052924B2 (en) | 2004-03-29 | 2006-05-30 | Articulated Technologies, Llc | Light active sheet and methods for making the same |
US7521368B2 (en) | 2004-05-07 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US20050287871A1 (en) | 2004-06-25 | 2005-12-29 | Matsushita Electric Industrial Co., Ltd. | Device, method, and program for computer aided design of flexible substrates |
EP1770788A3 (en) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
US7572667B2 (en) | 2006-01-20 | 2009-08-11 | Samsung Electronics Co., Ltd. | Method of forming an organic semiconductor pattern and method of manufacturing an organic thin film transistor using the same |
US8222116B2 (en) | 2006-03-03 | 2012-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US8173519B2 (en) | 2006-03-03 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN101785086B (zh) * | 2007-09-20 | 2012-03-21 | 夏普株式会社 | 显示装置的制造方法和叠层构造体 |
JP5368014B2 (ja) | 2008-06-24 | 2013-12-18 | 共同印刷株式会社 | フレキシブル有機elディスプレイの製造方法 |
JP5470633B2 (ja) * | 2008-12-11 | 2014-04-16 | 国立大学法人東北大学 | 光電変換素子及び太陽電池 |
JP5355618B2 (ja) | 2011-03-10 | 2013-11-27 | 三星ディスプレイ株式會社 | 可撓性表示装置及びこの製造方法 |
KR101423907B1 (ko) * | 2011-11-22 | 2014-07-29 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터 및 그 제조방법 |
EP2927982B1 (en) | 2012-11-30 | 2024-05-08 | LG Display Co., Ltd. | Organic light-emitting device including flexible substrate, and method for manufacturing same |
WO2014129519A1 (en) | 2013-02-20 | 2014-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method, semiconductor device, and peeling apparatus |
CN109273622B (zh) * | 2013-08-06 | 2021-03-12 | 株式会社半导体能源研究所 | 剥离方法 |
US20150125646A1 (en) * | 2013-11-05 | 2015-05-07 | Espci Innov | Self-Healing Thermally Conductive Polymer Materials |
CN117881215A (zh) | 2013-12-02 | 2024-04-12 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
WO2015147106A1 (ja) * | 2014-03-25 | 2015-10-01 | 株式会社カネカ | 化合物半導体太陽電池の製造方法 |
JP6354338B2 (ja) | 2014-05-30 | 2018-07-11 | 東レ株式会社 | 積層体、積層体の製造方法、及びこれを用いたフレキシブルデバイスの製造方法 |
JP6544055B2 (ja) * | 2014-06-04 | 2019-07-17 | 宇部興産株式会社 | ポリイミド膜の製造方法 |
JP6814633B2 (ja) | 2014-07-16 | 2021-01-20 | ランテクニカルサービス株式会社 | 薄型基板およびその製造方法、並びに基板の搬送方法 |
CN106575059B (zh) * | 2014-08-28 | 2021-03-19 | 索尼公司 | 显示装置和照明装置 |
JP2016086158A (ja) * | 2014-10-22 | 2016-05-19 | セントラル硝子株式会社 | ウエハ加工用積層体、ウエハ加工用仮接着材および薄型ウエハの製造方法 |
CN105374829B (zh) * | 2015-12-01 | 2018-03-27 | 上海天马有机发光显示技术有限公司 | 一种柔性显示基板及其制备方法 |
TWI753868B (zh) | 2016-08-05 | 2022-02-01 | 日商半導體能源研究所股份有限公司 | 剝離方法、顯示裝置、顯示模組及電子裝置 |
TWI730017B (zh) | 2016-08-09 | 2021-06-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置 |
TW201808628A (zh) | 2016-08-09 | 2018-03-16 | Semiconductor Energy Lab | 半導體裝置的製造方法 |
US10923350B2 (en) | 2016-08-31 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
-
2017
- 2017-08-22 KR KR1020197009196A patent/KR102425705B1/ko active IP Right Grant
- 2017-08-22 CN CN201780049788.7A patent/CN109564851A/zh active Pending
- 2017-08-22 WO PCT/IB2017/055049 patent/WO2018042284A1/en active Application Filing
- 2017-08-28 TW TW106129130A patent/TWI755423B/zh not_active IP Right Cessation
- 2017-08-28 US US15/687,855 patent/US10236408B2/en active Active
- 2017-08-28 JP JP2017163366A patent/JP6945392B2/ja active Active
-
2021
- 2021-09-14 JP JP2021149172A patent/JP2022002323A/ja not_active Withdrawn
-
2023
- 2023-06-26 JP JP2023103991A patent/JP2023115130A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007012917A (ja) * | 2005-06-30 | 2007-01-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2016036005A (ja) * | 2013-12-03 | 2016-03-17 | 株式会社半導体エネルギー研究所 | 剥離装置、及び積層体の作製装置 |
JP2015133481A (ja) * | 2013-12-12 | 2015-07-23 | 株式会社半導体エネルギー研究所 | 剥離方法及び剥離装置 |
CN105793957A (zh) * | 2013-12-12 | 2016-07-20 | 株式会社半导体能源研究所 | 剥离方法及剥离装置 |
US20150187855A1 (en) * | 2013-12-27 | 2015-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2015144273A (ja) * | 2013-12-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US20160172244A1 (en) * | 2014-12-11 | 2016-06-16 | Panasonic Intellectual Property Management Co., Ltd. | Method for manufacturing electronic device comprising a resin substrate and an electronic component |
JP2016115930A (ja) * | 2014-12-11 | 2016-06-23 | パナソニックIpマネジメント株式会社 | 電子素子の製造方法、可撓性基板の製造方法、積層基板および電子素子 |
WO2016111197A1 (ja) * | 2015-01-06 | 2016-07-14 | シャープ株式会社 | 素子基板の製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021166274A (ja) * | 2020-04-08 | 2021-10-14 | 信越エンジニアリング株式会社 | ワーク分離装置及びワーク分離方法 |
WO2021205855A1 (ja) * | 2020-04-08 | 2021-10-14 | 信越エンジニアリング株式会社 | ワーク分離装置及びワーク分離方法 |
JP7494300B2 (ja) | 2021-12-22 | 2024-06-03 | 武漢華星光電半導体顕示技術有限公司 | 表示パネル、表示モジュール、及び移動端末 |
Also Published As
Publication number | Publication date |
---|---|
KR20190042695A (ko) | 2019-04-24 |
WO2018042284A1 (en) | 2018-03-08 |
JP2022002323A (ja) | 2022-01-06 |
US10236408B2 (en) | 2019-03-19 |
KR102425705B1 (ko) | 2022-07-28 |
CN109564851A (zh) | 2019-04-02 |
JP2023115130A (ja) | 2023-08-18 |
TW201825298A (zh) | 2018-07-16 |
JP6945392B2 (ja) | 2021-10-06 |
TWI755423B (zh) | 2022-02-21 |
US20180061638A1 (en) | 2018-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6945392B2 (ja) | 半導体装置の作製方法 | |
JP7181370B2 (ja) | 半導体装置の作製方法 | |
JP7030475B2 (ja) | 半導体装置の作製方法 | |
JP6626142B2 (ja) | 積層体及びその作製方法 | |
JP7005246B2 (ja) | 半導体装置の作製方法 | |
JP2018022149A (ja) | 表示装置の作製方法、表示装置、表示モジュールおよび電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200826 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200826 |
|
TRDD | Decision of grant or rejection written | ||
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210818 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210824 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210914 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6945392 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |