JP2010087492A5 - - Google Patents
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- Publication number
- JP2010087492A5 JP2010087492A5 JP2009201771A JP2009201771A JP2010087492A5 JP 2010087492 A5 JP2010087492 A5 JP 2010087492A5 JP 2009201771 A JP2009201771 A JP 2009201771A JP 2009201771 A JP2009201771 A JP 2009201771A JP 2010087492 A5 JP2010087492 A5 JP 2010087492A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- semiconductor substrate
- substrate
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 59
- 239000004065 semiconductor Substances 0.000 claims 37
- 239000013078 crystal Substances 0.000 claims 36
- 238000000034 method Methods 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 230000001678 irradiating effect Effects 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000007689 inspection Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 238000004381 surface treatment Methods 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009201771A JP5572347B2 (ja) | 2008-09-05 | 2009-09-01 | Ｓｏｉ基板の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008227725 | 2008-09-05 | ||
| JP2008227725 | 2008-09-05 | ||
| JP2009201771A JP5572347B2 (ja) | 2008-09-05 | 2009-09-01 | Ｓｏｉ基板の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010087492A JP2010087492A (ja) | 2010-04-15 |
| JP2010087492A5 true JP2010087492A5 (enExample) | 2012-10-11 |
| JP5572347B2 JP5572347B2 (ja) | 2014-08-13 |
Family
ID=41799628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009201771A Expired - Fee Related JP5572347B2 (ja) | 2008-09-05 | 2009-09-01 | Ｓｏｉ基板の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8187953B2 (enExample) |
| JP (1) | JP5572347B2 (enExample) |
| SG (1) | SG159484A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5364345B2 (ja) * | 2008-11-12 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| US8318588B2 (en) * | 2009-08-25 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| SG178179A1 (en) * | 2009-10-09 | 2012-03-29 | Semiconductor Energy Lab | Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate |
| US8367519B2 (en) * | 2009-12-30 | 2013-02-05 | Memc Electronic Materials, Inc. | Method for the preparation of a multi-layered crystalline structure |
| KR20120124352A (ko) * | 2010-02-05 | 2012-11-13 | 스미토모덴키고교가부시키가이샤 | 탄화규소 기판의 제조 방법 |
| US20130299954A1 (en) * | 2010-11-30 | 2013-11-14 | Kyocera Corporation | Composite substrate and method of manufacturing the same |
| US9287353B2 (en) | 2010-11-30 | 2016-03-15 | Kyocera Corporation | Composite substrate and method of manufacturing the same |
| TWI570809B (zh) * | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US9123529B2 (en) | 2011-06-21 | 2015-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate |
| CN106409650B (zh) * | 2015-08-03 | 2019-01-29 | 沈阳硅基科技有限公司 | 一种硅片直接键合方法 |
| EP3485505A1 (en) * | 2016-07-12 | 2019-05-22 | Qmat, Inc. | Method of a donor substrate undergoing reclamation |
| US20180033609A1 (en) * | 2016-07-28 | 2018-02-01 | QMAT, Inc. | Removal of non-cleaved/non-transferred material from donor substrate |
| WO2018011731A1 (en) * | 2016-07-12 | 2018-01-18 | QMAT, Inc. | Method of a donor substrate undergoing reclamation |
| US11289330B2 (en) | 2019-09-30 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator (SOI) substrate and method for forming |
| FR3163205A1 (fr) * | 2024-06-10 | 2025-12-12 | Soitec | Procédé de fabrication d’une plaquette donneuse pour le transfert de couches minces, et plaquette donneuse |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140786A (ja) * | 1997-07-18 | 1999-02-12 | Denso Corp | 半導体基板及びその製造方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| JP2000223682A (ja) | 1999-02-02 | 2000-08-11 | Canon Inc | 基体の処理方法及び半導体基板の製造方法 |
| US6468923B1 (en) * | 1999-03-26 | 2002-10-22 | Canon Kabushiki Kaisha | Method of producing semiconductor member |
| FR2834123B1 (fr) | 2001-12-21 | 2005-02-04 | Soitec Silicon On Insulator | Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report |
| TWI233154B (en) | 2002-12-06 | 2005-05-21 | Soitec Silicon On Insulator | Method for recycling a substrate |
| JP5284576B2 (ja) * | 2006-11-10 | 2013-09-11 | 信越化学工業株式会社 | 半導体基板の製造方法 |
-
2009
- 2009-08-26 SG SG200905695-3A patent/SG159484A1/en unknown
- 2009-08-31 US US12/550,520 patent/US8187953B2/en not_active Expired - Fee Related
- 2009-09-01 JP JP2009201771A patent/JP5572347B2/ja not_active Expired - Fee Related
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