JP2016012738A5 - - Google Patents

Download PDF

Info

Publication number
JP2016012738A5
JP2016012738A5 JP2015199639A JP2015199639A JP2016012738A5 JP 2016012738 A5 JP2016012738 A5 JP 2016012738A5 JP 2015199639 A JP2015199639 A JP 2015199639A JP 2015199639 A JP2015199639 A JP 2015199639A JP 2016012738 A5 JP2016012738 A5 JP 2016012738A5
Authority
JP
Japan
Prior art keywords
manufacturing
layer
element according
gas
magnetoresistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015199639A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016012738A (ja
JP6078610B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2015199639A priority Critical patent/JP6078610B2/ja
Priority claimed from JP2015199639A external-priority patent/JP6078610B2/ja
Publication of JP2016012738A publication Critical patent/JP2016012738A/ja
Publication of JP2016012738A5 publication Critical patent/JP2016012738A5/ja
Application granted granted Critical
Publication of JP6078610B2 publication Critical patent/JP6078610B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015199639A 2013-09-25 2015-10-07 磁気抵抗効果素子の製造方法 Active JP6078610B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015199639A JP6078610B2 (ja) 2013-09-25 2015-10-07 磁気抵抗効果素子の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013197982 2013-09-25
JP2013197982 2013-09-25
JP2015199639A JP6078610B2 (ja) 2013-09-25 2015-10-07 磁気抵抗効果素子の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2015531192A Division JP5824189B2 (ja) 2013-09-25 2014-04-18 磁気抵抗効果素子の製造システム

Publications (3)

Publication Number Publication Date
JP2016012738A JP2016012738A (ja) 2016-01-21
JP2016012738A5 true JP2016012738A5 (enExample) 2016-03-03
JP6078610B2 JP6078610B2 (ja) 2017-02-08

Family

ID=52742389

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015531192A Active JP5824189B2 (ja) 2013-09-25 2014-04-18 磁気抵抗効果素子の製造システム
JP2015199639A Active JP6078610B2 (ja) 2013-09-25 2015-10-07 磁気抵抗効果素子の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2015531192A Active JP5824189B2 (ja) 2013-09-25 2014-04-18 磁気抵抗効果素子の製造システム

Country Status (5)

Country Link
US (2) US20160204342A1 (enExample)
JP (2) JP5824189B2 (enExample)
KR (1) KR101862632B1 (enExample)
TW (1) TWI557959B (enExample)
WO (1) WO2015045205A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5824189B2 (ja) 2013-09-25 2015-11-25 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造システム
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
JP2018147916A (ja) * 2017-03-01 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法
US10522749B2 (en) * 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10043851B1 (en) * 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
US10700268B2 (en) 2017-08-29 2020-06-30 Everspin Technologies, Inc. Method of fabricating magnetoresistive bit from magnetoresistive stack
US10573449B2 (en) * 2017-10-16 2020-02-25 Tdk Corporation Tunnel magnetoresistive effect element
US11195703B2 (en) 2018-12-07 2021-12-07 Applied Materials, Inc. Apparatus and techniques for angled etching using multielectrode extraction source
US11715621B2 (en) 2018-12-17 2023-08-01 Applied Materials, Inc. Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
CN113383435A (zh) * 2019-02-01 2021-09-10 朗姆研究公司 利用气体处理及脉冲化的离子束蚀刻
JP7649749B2 (ja) 2019-02-28 2025-03-21 ラム リサーチ コーポレーション 側壁洗浄によるイオンビームエッチング
US20210234091A1 (en) * 2020-01-24 2021-07-29 Applied Materials, Inc. Magnetic memory and method of fabrication

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04254328A (ja) * 1991-02-06 1992-09-09 Fujitsu Ltd 半導体装置の製造方法
JP3603062B2 (ja) * 2000-09-06 2004-12-15 松下電器産業株式会社 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス
JP3558996B2 (ja) * 2001-03-30 2004-08-25 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置
JP3939519B2 (ja) * 2001-09-14 2007-07-04 アルプス電気株式会社 磁気検出素子及びその製造方法
US20030091739A1 (en) 2001-11-14 2003-05-15 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
FR2884916B1 (fr) * 2005-04-25 2007-06-22 Commissariat Energie Atomique Detecteur optique ultrasensible a grande resolution temporelle, utilisant un plasmon de surface
TWI413117B (zh) * 2005-09-13 2013-10-21 Canon Anelva Corp 磁阻效果元件之製造方法及製造裝置
JP2008052840A (ja) * 2006-08-25 2008-03-06 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッドスライダの製造方法
CN101517768B (zh) 2006-09-13 2010-12-22 佳能安内华股份有限公司 磁阻效应元件制造方法和用于制造磁阻效应元件的多腔设备
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system
US7863582B2 (en) * 2008-01-25 2011-01-04 Valery Godyak Ion-beam source
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
JP5117421B2 (ja) * 2009-02-12 2013-01-16 株式会社東芝 磁気抵抗効果素子及びその製造方法
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5601181B2 (ja) * 2010-12-02 2014-10-08 富士通セミコンダクター株式会社 磁気抵抗効果素子及びその製造方法
JP5689967B2 (ja) 2011-06-24 2015-03-25 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
WO2013027406A1 (ja) * 2011-08-25 2013-02-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び磁気抵抗効果膜の加工方法
JP2013247198A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 磁気抵抗素子及びその製造方法
JP5824189B2 (ja) 2013-09-25 2015-11-25 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造システム

Similar Documents

Publication Publication Date Title
JP2016012738A5 (enExample)
JP2010050444A5 (enExample)
JP2011238900A5 (enExample)
JP2012054540A5 (ja) Ｓｏｉ基板の作製方法
JP2015173249A5 (ja) 剥離方法
JP2016192483A5 (enExample)
JP2011192693A5 (ja) 多層反射膜付基板の製造方法および反射型マスクブランクの製造方法
JP2010087492A5 (enExample)
JP2013232636A5 (enExample)
JP2012028755A5 (ja) 分離方法および半導体素子の作製方法
JP2009278130A5 (enExample)
MY179440A (en) Method for producing magnetic recording medium
JP2013521535A5 (enExample)
JP2013511151A5 (enExample)
JP2009111375A5 (enExample)
JP2014133414A5 (enExample)
JP2013157601A5 (enExample)
JP2013042180A5 (enExample)
JP2016505220A5 (enExample)
JP2011228680A5 (ja) Ｓｏｉ基板の作製方法、および半導体基板の作製方法
JP2009260295A5 (ja) 半導体基板の作製方法
ATE523067T1 (de) Verfahren zur herstellung einer mehrschichtigen stapelstruktur mit verbesserter wvtr- grenzeigenschaft
WO2014172131A3 (en) Methods of forming perovskite films
JP2009212502A5 (enExample)
WO2014074554A3 (en) Stacked actuator apparatus, system, and method