JP2016012738A5 - - Google Patents

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Publication number
JP2016012738A5
JP2016012738A5 JP2015199639A JP2015199639A JP2016012738A5 JP 2016012738 A5 JP2016012738 A5 JP 2016012738A5 JP 2015199639 A JP2015199639 A JP 2015199639A JP 2015199639 A JP2015199639 A JP 2015199639A JP 2016012738 A5 JP2016012738 A5 JP 2016012738A5
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JP
Japan
Prior art keywords
manufacturing
layer
element according
gas
magnetoresistive
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JP2015199639A
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English (en)
Japanese (ja)
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JP6078610B2 (ja
JP2016012738A (ja
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Priority to JP2015199639A priority Critical patent/JP6078610B2/ja
Priority claimed from JP2015199639A external-priority patent/JP6078610B2/ja
Publication of JP2016012738A publication Critical patent/JP2016012738A/ja
Publication of JP2016012738A5 publication Critical patent/JP2016012738A5/ja
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Publication of JP6078610B2 publication Critical patent/JP6078610B2/ja
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JP2015199639A 2013-09-25 2015-10-07 磁気抵抗効果素子の製造方法 Active JP6078610B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015199639A JP6078610B2 (ja) 2013-09-25 2015-10-07 磁気抵抗効果素子の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013197982 2013-09-25
JP2013197982 2013-09-25
JP2015199639A JP6078610B2 (ja) 2013-09-25 2015-10-07 磁気抵抗効果素子の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2015531192A Division JP5824189B2 (ja) 2013-09-25 2014-04-18 磁気抵抗効果素子の製造システム

Publications (3)

Publication Number Publication Date
JP2016012738A JP2016012738A (ja) 2016-01-21
JP2016012738A5 true JP2016012738A5 (enExample) 2016-03-03
JP6078610B2 JP6078610B2 (ja) 2017-02-08

Family

ID=52742389

Family Applications (2)

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JP2015531192A Active JP5824189B2 (ja) 2013-09-25 2014-04-18 磁気抵抗効果素子の製造システム
JP2015199639A Active JP6078610B2 (ja) 2013-09-25 2015-10-07 磁気抵抗効果素子の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2015531192A Active JP5824189B2 (ja) 2013-09-25 2014-04-18 磁気抵抗効果素子の製造システム

Country Status (5)

Country Link
US (2) US20160204342A1 (enExample)
JP (2) JP5824189B2 (enExample)
KR (1) KR101862632B1 (enExample)
TW (1) TWI557959B (enExample)
WO (1) WO2015045205A1 (enExample)

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Publication number Priority date Publication date Assignee Title
KR101862632B1 (ko) 2013-09-25 2018-05-31 캐논 아네르바 가부시키가이샤 자기 저항 효과 소자의 제조 방법 및 제조 시스템
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
JP2018147916A (ja) * 2017-03-01 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法
US10522749B2 (en) 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10043851B1 (en) * 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
WO2019046064A1 (en) 2017-08-29 2019-03-07 Everspin Technologies, Inc. MAGNETORESISTIVE CELL ETCHING METHOD
WO2019077661A1 (ja) * 2017-10-16 2019-04-25 Tdk株式会社 トンネル磁気抵抗効果素子、磁気メモリ、内蔵型メモリ、及びトンネル磁気抵抗効果素子を作製する方法
US11195703B2 (en) 2018-12-07 2021-12-07 Applied Materials, Inc. Apparatus and techniques for angled etching using multielectrode extraction source
US11715621B2 (en) * 2018-12-17 2023-08-01 Applied Materials, Inc. Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
KR102811847B1 (ko) * 2019-02-01 2025-05-22 램 리써치 코포레이션 가스 처리 및 펄싱을 사용한 이온 빔 에칭
CN113519071B (zh) 2019-02-28 2025-04-22 朗姆研究公司 利用侧壁清洁的离子束蚀刻
US20210234091A1 (en) * 2020-01-24 2021-07-29 Applied Materials, Inc. Magnetic memory and method of fabrication

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JPH04254328A (ja) * 1991-02-06 1992-09-09 Fujitsu Ltd 半導体装置の製造方法
JP3603062B2 (ja) * 2000-09-06 2004-12-15 松下電器産業株式会社 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス
JP3558996B2 (ja) * 2001-03-30 2004-08-25 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置
JP3939519B2 (ja) * 2001-09-14 2007-07-04 アルプス電気株式会社 磁気検出素子及びその製造方法
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
US20030091739A1 (en) 2001-11-14 2003-05-15 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
FR2884916B1 (fr) * 2005-04-25 2007-06-22 Commissariat Energie Atomique Detecteur optique ultrasensible a grande resolution temporelle, utilisant un plasmon de surface
JPWO2007032379A1 (ja) * 2005-09-13 2009-03-19 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
JP2008052840A (ja) * 2006-08-25 2008-03-06 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッドスライダの製造方法
RU2390883C1 (ru) * 2006-09-13 2010-05-27 Кэнон АНЕЛВА Корпорейшн Способ изготовления элемента с магниторезистивным эффектом и многокамерное устройство для изготовления элемента с магниторезистивным эффектом
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system
US7863582B2 (en) * 2008-01-25 2011-01-04 Valery Godyak Ion-beam source
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
JP5117421B2 (ja) 2009-02-12 2013-01-16 株式会社東芝 磁気抵抗効果素子及びその製造方法
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
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JP5601181B2 (ja) * 2010-12-02 2014-10-08 富士通セミコンダクター株式会社 磁気抵抗効果素子及びその製造方法
KR101574155B1 (ko) 2011-06-24 2015-12-03 캐논 아네르바 가부시키가이샤 자기 저항 효과 소자의 제조 방법
KR101566863B1 (ko) 2011-08-25 2015-11-06 캐논 아네르바 가부시키가이샤 자기저항 소자의 제조 방법 및 자기저항 필름의 가공 방법
JP2013247198A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 磁気抵抗素子及びその製造方法
KR101862632B1 (ko) 2013-09-25 2018-05-31 캐논 아네르바 가부시키가이샤 자기 저항 효과 소자의 제조 방법 및 제조 시스템

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