TWI557959B - Manufacture method and manufacturing system of magnetoresistive effect element - Google Patents

Manufacture method and manufacturing system of magnetoresistive effect element Download PDF

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Publication number
TWI557959B
TWI557959B TW103129887A TW103129887A TWI557959B TW I557959 B TWI557959 B TW I557959B TW 103129887 A TW103129887 A TW 103129887A TW 103129887 A TW103129887 A TW 103129887A TW I557959 B TWI557959 B TW I557959B
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TW
Taiwan
Prior art keywords
layer
etching
chamber
gas
ion beam
Prior art date
Application number
TW103129887A
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English (en)
Chinese (zh)
Other versions
TW201526321A (zh
Inventor
林真理恵
坂本清尚
池田真義
Original Assignee
佳能安內華股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 佳能安內華股份有限公司 filed Critical 佳能安內華股份有限公司
Publication of TW201526321A publication Critical patent/TW201526321A/zh
Application granted granted Critical
Publication of TWI557959B publication Critical patent/TWI557959B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW103129887A 2013-09-25 2014-08-29 Manufacture method and manufacturing system of magnetoresistive effect element TWI557959B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013197982 2013-09-25

Publications (2)

Publication Number Publication Date
TW201526321A TW201526321A (zh) 2015-07-01
TWI557959B true TWI557959B (zh) 2016-11-11

Family

ID=52742389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103129887A TWI557959B (zh) 2013-09-25 2014-08-29 Manufacture method and manufacturing system of magnetoresistive effect element

Country Status (5)

Country Link
US (2) US20160204342A1 (enExample)
JP (2) JP5824189B2 (enExample)
KR (1) KR101862632B1 (enExample)
TW (1) TWI557959B (enExample)
WO (1) WO2015045205A1 (enExample)

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JP5824189B2 (ja) 2013-09-25 2015-11-25 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造システム
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
JP2018147916A (ja) * 2017-03-01 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法
US10522749B2 (en) * 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10043851B1 (en) * 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
EP3996158B1 (en) * 2017-08-29 2024-10-02 Everspin Technologies, Inc. Method of etching magnetoresistive stack
CN111226324B (zh) * 2017-10-16 2023-08-29 Tdk株式会社 隧道磁阻效应元件、磁存储器、内置型存储器及制作隧道磁阻效应元件的方法
US11195703B2 (en) 2018-12-07 2021-12-07 Applied Materials, Inc. Apparatus and techniques for angled etching using multielectrode extraction source
US11715621B2 (en) 2018-12-17 2023-08-01 Applied Materials, Inc. Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
US20220102624A1 (en) * 2019-02-01 2022-03-31 Lam Research Corporation Ion beam etching with gas treatment and pulsing
CN113519071B (zh) 2019-02-28 2025-04-22 朗姆研究公司 利用侧壁清洁的离子束蚀刻
US20210234091A1 (en) * 2020-01-24 2021-07-29 Applied Materials, Inc. Magnetic memory and method of fabrication

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TW200717470A (en) * 2005-09-13 2007-05-01 Canon Anelva Corp Method and apparatus for manufacturing of magneto-resistance effect element
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法
TW201203351A (en) * 2010-03-10 2012-01-16 Applied Materials Inc Apparatus and methods for cyclical oxidation and etching
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system

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JP3603062B2 (ja) * 2000-09-06 2004-12-15 松下電器産業株式会社 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス
JP3558996B2 (ja) * 2001-03-30 2004-08-25 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置
JP3939519B2 (ja) * 2001-09-14 2007-07-04 アルプス電気株式会社 磁気検出素子及びその製造方法
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
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JP4354519B2 (ja) * 2006-09-13 2009-10-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
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TW200717470A (en) * 2005-09-13 2007-05-01 Canon Anelva Corp Method and apparatus for manufacturing of magneto-resistance effect element
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法
TW201203351A (en) * 2010-03-10 2012-01-16 Applied Materials Inc Apparatus and methods for cyclical oxidation and etching

Also Published As

Publication number Publication date
US10157961B2 (en) 2018-12-18
TW201526321A (zh) 2015-07-01
KR20160055187A (ko) 2016-05-17
JP2016012738A (ja) 2016-01-21
US20170250221A1 (en) 2017-08-31
KR101862632B1 (ko) 2018-05-31
US20160204342A1 (en) 2016-07-14
WO2015045205A1 (ja) 2015-04-02
JP5824189B2 (ja) 2015-11-25
JPWO2015045205A1 (ja) 2017-03-09
JP6078610B2 (ja) 2017-02-08

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