TWI557959B - Manufacture method and manufacturing system of magnetoresistive effect element - Google Patents

Manufacture method and manufacturing system of magnetoresistive effect element Download PDF

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Publication number
TWI557959B
TWI557959B TW103129887A TW103129887A TWI557959B TW I557959 B TWI557959 B TW I557959B TW 103129887 A TW103129887 A TW 103129887A TW 103129887 A TW103129887 A TW 103129887A TW I557959 B TWI557959 B TW I557959B
Authority
TW
Taiwan
Prior art keywords
layer
etching
chamber
gas
ion beam
Prior art date
Application number
TW103129887A
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English (en)
Chinese (zh)
Other versions
TW201526321A (zh
Inventor
Marie Hayashi
Kiyotaka Sakamoto
Masayoshi Ikeda
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of TW201526321A publication Critical patent/TW201526321A/zh
Application granted granted Critical
Publication of TWI557959B publication Critical patent/TWI557959B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW103129887A 2013-09-25 2014-08-29 Manufacture method and manufacturing system of magnetoresistive effect element TWI557959B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013197982 2013-09-25

Publications (2)

Publication Number Publication Date
TW201526321A TW201526321A (zh) 2015-07-01
TWI557959B true TWI557959B (zh) 2016-11-11

Family

ID=52742389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103129887A TWI557959B (zh) 2013-09-25 2014-08-29 Manufacture method and manufacturing system of magnetoresistive effect element

Country Status (5)

Country Link
US (2) US20160204342A1 (enExample)
JP (2) JP5824189B2 (enExample)
KR (1) KR101862632B1 (enExample)
TW (1) TWI557959B (enExample)
WO (1) WO2015045205A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101862632B1 (ko) 2013-09-25 2018-05-31 캐논 아네르바 가부시키가이샤 자기 저항 효과 소자의 제조 방법 및 제조 시스템
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
JP2018147916A (ja) * 2017-03-01 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法
US10522749B2 (en) 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10043851B1 (en) * 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
WO2019046064A1 (en) 2017-08-29 2019-03-07 Everspin Technologies, Inc. MAGNETORESISTIVE CELL ETCHING METHOD
WO2019077661A1 (ja) * 2017-10-16 2019-04-25 Tdk株式会社 トンネル磁気抵抗効果素子、磁気メモリ、内蔵型メモリ、及びトンネル磁気抵抗効果素子を作製する方法
US11195703B2 (en) 2018-12-07 2021-12-07 Applied Materials, Inc. Apparatus and techniques for angled etching using multielectrode extraction source
US11715621B2 (en) * 2018-12-17 2023-08-01 Applied Materials, Inc. Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
KR102811847B1 (ko) * 2019-02-01 2025-05-22 램 리써치 코포레이션 가스 처리 및 펄싱을 사용한 이온 빔 에칭
CN113519071B (zh) 2019-02-28 2025-04-22 朗姆研究公司 利用侧壁清洁的离子束蚀刻
US20210234091A1 (en) * 2020-01-24 2021-07-29 Applied Materials, Inc. Magnetic memory and method of fabrication

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200717470A (en) * 2005-09-13 2007-05-01 Canon Anelva Corp Method and apparatus for manufacturing of magneto-resistance effect element
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法
TW201203351A (en) * 2010-03-10 2012-01-16 Applied Materials Inc Apparatus and methods for cyclical oxidation and etching
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04254328A (ja) * 1991-02-06 1992-09-09 Fujitsu Ltd 半導体装置の製造方法
JP3603062B2 (ja) * 2000-09-06 2004-12-15 松下電器産業株式会社 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス
JP3558996B2 (ja) * 2001-03-30 2004-08-25 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置
JP3939519B2 (ja) * 2001-09-14 2007-07-04 アルプス電気株式会社 磁気検出素子及びその製造方法
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
US20030091739A1 (en) 2001-11-14 2003-05-15 Hitoshi Sakamoto Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
FR2884916B1 (fr) * 2005-04-25 2007-06-22 Commissariat Energie Atomique Detecteur optique ultrasensible a grande resolution temporelle, utilisant un plasmon de surface
JP2008052840A (ja) * 2006-08-25 2008-03-06 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッドスライダの製造方法
RU2390883C1 (ru) * 2006-09-13 2010-05-27 Кэнон АНЕЛВА Корпорейшн Способ изготовления элемента с магниторезистивным эффектом и многокамерное устройство для изготовления элемента с магниторезистивным эффектом
US7863582B2 (en) * 2008-01-25 2011-01-04 Valery Godyak Ion-beam source
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5601181B2 (ja) * 2010-12-02 2014-10-08 富士通セミコンダクター株式会社 磁気抵抗効果素子及びその製造方法
KR101574155B1 (ko) 2011-06-24 2015-12-03 캐논 아네르바 가부시키가이샤 자기 저항 효과 소자의 제조 방법
KR101566863B1 (ko) 2011-08-25 2015-11-06 캐논 아네르바 가부시키가이샤 자기저항 소자의 제조 방법 및 자기저항 필름의 가공 방법
JP2013247198A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 磁気抵抗素子及びその製造方法
KR101862632B1 (ko) 2013-09-25 2018-05-31 캐논 아네르바 가부시키가이샤 자기 저항 효과 소자의 제조 방법 및 제조 시스템

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200717470A (en) * 2005-09-13 2007-05-01 Canon Anelva Corp Method and apparatus for manufacturing of magneto-resistance effect element
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法
TW201203351A (en) * 2010-03-10 2012-01-16 Applied Materials Inc Apparatus and methods for cyclical oxidation and etching

Also Published As

Publication number Publication date
JPWO2015045205A1 (ja) 2017-03-09
US20170250221A1 (en) 2017-08-31
WO2015045205A1 (ja) 2015-04-02
US20160204342A1 (en) 2016-07-14
US10157961B2 (en) 2018-12-18
KR20160055187A (ko) 2016-05-17
KR101862632B1 (ko) 2018-05-31
TW201526321A (zh) 2015-07-01
JP6078610B2 (ja) 2017-02-08
JP2016012738A (ja) 2016-01-21
JP5824189B2 (ja) 2015-11-25

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