KR101862632B1 - 자기 저항 효과 소자의 제조 방법 및 제조 시스템 - Google Patents

자기 저항 효과 소자의 제조 방법 및 제조 시스템 Download PDF

Info

Publication number
KR101862632B1
KR101862632B1 KR1020167008946A KR20167008946A KR101862632B1 KR 101862632 B1 KR101862632 B1 KR 101862632B1 KR 1020167008946 A KR1020167008946 A KR 1020167008946A KR 20167008946 A KR20167008946 A KR 20167008946A KR 101862632 B1 KR101862632 B1 KR 101862632B1
Authority
KR
South Korea
Prior art keywords
layer
gas
etching
substrate
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167008946A
Other languages
English (en)
Korean (ko)
Other versions
KR20160055187A (ko
Inventor
마리에 하야시
기요타카 사카모토
마사요시 이케다
Original Assignee
캐논 아네르바 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 아네르바 가부시키가이샤 filed Critical 캐논 아네르바 가부시키가이샤
Publication of KR20160055187A publication Critical patent/KR20160055187A/ko
Application granted granted Critical
Publication of KR101862632B1 publication Critical patent/KR101862632B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H01L43/12—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H01L43/02—
    • H01L43/08—
    • H01L43/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020167008946A 2013-09-25 2014-04-18 자기 저항 효과 소자의 제조 방법 및 제조 시스템 Active KR101862632B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013197982 2013-09-25
JPJP-P-2013-197982 2013-09-25
PCT/JP2014/002210 WO2015045205A1 (ja) 2013-09-25 2014-04-18 磁気抵抗効果素子の製造方法および製造システム

Publications (2)

Publication Number Publication Date
KR20160055187A KR20160055187A (ko) 2016-05-17
KR101862632B1 true KR101862632B1 (ko) 2018-05-31

Family

ID=52742389

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167008946A Active KR101862632B1 (ko) 2013-09-25 2014-04-18 자기 저항 효과 소자의 제조 방법 및 제조 시스템

Country Status (5)

Country Link
US (2) US20160204342A1 (enExample)
JP (2) JP5824189B2 (enExample)
KR (1) KR101862632B1 (enExample)
TW (1) TWI557959B (enExample)
WO (1) WO2015045205A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5824189B2 (ja) 2013-09-25 2015-11-25 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造システム
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
JP2018147916A (ja) * 2017-03-01 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 磁気記憶素子、磁気記憶装置、電子機器、および磁気記憶素子の製造方法
US10522749B2 (en) * 2017-05-15 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
US10043851B1 (en) * 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
EP3676884B1 (en) 2017-08-29 2021-11-10 Everspin Technologies, Inc. Method of etching magnetoresistive stack
US10573449B2 (en) * 2017-10-16 2020-02-25 Tdk Corporation Tunnel magnetoresistive effect element
US11195703B2 (en) 2018-12-07 2021-12-07 Applied Materials, Inc. Apparatus and techniques for angled etching using multielectrode extraction source
US11715621B2 (en) 2018-12-17 2023-08-01 Applied Materials, Inc. Scanned angled etching apparatus and techniques providing separate co-linear radicals and ions
CN113383435A (zh) * 2019-02-01 2021-09-10 朗姆研究公司 利用气体处理及脉冲化的离子束蚀刻
KR102755515B1 (ko) 2019-02-28 2025-01-14 램 리써치 코포레이션 측벽 세정을 사용한 이온 빔 에칭
US20210234091A1 (en) * 2020-01-24 2021-07-29 Applied Materials, Inc. Magnetic memory and method of fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080272302A1 (en) * 2005-04-25 2008-11-06 Commissariat A L'energie Atomique Ultra-Sensitive Optical Detector With High Time Resolution
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04254328A (ja) * 1991-02-06 1992-09-09 Fujitsu Ltd 半導体装置の製造方法
JP3603062B2 (ja) * 2000-09-06 2004-12-15 松下電器産業株式会社 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス
JP3558996B2 (ja) * 2001-03-30 2004-08-25 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気再生装置及び磁気記憶装置
JP3939519B2 (ja) * 2001-09-14 2007-07-04 アルプス電気株式会社 磁気検出素子及びその製造方法
TWI253478B (en) 2001-11-14 2006-04-21 Mitsubishi Heavy Ind Ltd Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US7659209B2 (en) 2001-11-14 2010-02-09 Canon Anelva Corporation Barrier metal film production method
JPWO2007032379A1 (ja) 2005-09-13 2009-03-19 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
JP2008052840A (ja) * 2006-08-25 2008-03-06 Hitachi Global Storage Technologies Netherlands Bv 磁気ヘッドスライダの製造方法
JP4354519B2 (ja) * 2006-09-13 2009-10-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
US8472149B2 (en) * 2007-10-01 2013-06-25 Tdk Corporation CPP type magneto-resistive effect device and magnetic disk system
US7863582B2 (en) * 2008-01-25 2011-01-04 Valery Godyak Ion-beam source
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5601181B2 (ja) * 2010-12-02 2014-10-08 富士通セミコンダクター株式会社 磁気抵抗効果素子及びその製造方法
US8970213B2 (en) 2011-06-24 2015-03-03 Canon Anelva Corporation Method for manufacturing magnetoresistance effect element
WO2013027406A1 (ja) 2011-08-25 2013-02-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び磁気抵抗効果膜の加工方法
JP2013247198A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 磁気抵抗素子及びその製造方法
JP5824189B2 (ja) 2013-09-25 2015-11-25 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080272302A1 (en) * 2005-04-25 2008-11-06 Commissariat A L'energie Atomique Ultra-Sensitive Optical Detector With High Time Resolution
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法

Also Published As

Publication number Publication date
TW201526321A (zh) 2015-07-01
JP2016012738A (ja) 2016-01-21
US10157961B2 (en) 2018-12-18
JP5824189B2 (ja) 2015-11-25
US20160204342A1 (en) 2016-07-14
KR20160055187A (ko) 2016-05-17
JP6078610B2 (ja) 2017-02-08
TWI557959B (zh) 2016-11-11
US20170250221A1 (en) 2017-08-31
JPWO2015045205A1 (ja) 2017-03-09
WO2015045205A1 (ja) 2015-04-02

Similar Documents

Publication Publication Date Title
KR101862632B1 (ko) 자기 저항 효과 소자의 제조 방법 및 제조 시스템
US9601688B2 (en) Method of manufacturing magnetoresistive element and method of processing magnetoresistive film
JP4354519B2 (ja) 磁気抵抗効果素子の製造方法
KR101574155B1 (ko) 자기 저항 효과 소자의 제조 방법
CN103403215B (zh) 制造设备
US12035633B2 (en) Method for etching magnetic tunnel junction
US20100304504A1 (en) Process and apparatus for fabricating magnetic device
EP1926158B1 (en) Method and apparatus for manufacturing magnetoresistive device
CN109065480A (zh) 一种磁隧道结刻蚀方法
TWI450427B (zh) 磁阻效應元件的製造方法
US20110308544A1 (en) Cleaning method of processing chamber of magnetic film, manufacturing method of magnetic device, and substrate treatment apparatus
KR20150126358A (ko) 평탄화 방법, 기판 처리 시스템, ｍｒａｍ 제조 방법 및 ｍｒａｍ 소자
CN104798218B (zh) 磁阻效应元件的制造方法
CN111630674A (zh) 在有/无稀有气体的磁性穿隧结(mtj)蚀刻过程中将氧化剂导入至甲醇以改善磁性穿隧结(mtj)性能
WO2009107485A1 (ja) 磁気抵抗効果素子の製造方法及び製造装置
KR101602869B1 (ko) 자기 저항 효과 소자의 제조 방법 및 제조 시스템
JP5824192B1 (ja) 磁気抵抗効果素子の製造方法および製造システム

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

Patent event date: 20160405

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20170519

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20171127

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20180427

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20180524

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20180525

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20210428

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20250403

Start annual number: 8

End annual number: 8