JP4527806B2 - 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置 - Google Patents
磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置 Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims description 62
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- 238000000151 deposition Methods 0.000 claims description 25
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- 229910052749 magnesium Inorganic materials 0.000 claims description 2
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- 238000001312 dry etching Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 92
- 230000005294 ferromagnetic effect Effects 0.000 description 40
- 229910019236 CoFeB Inorganic materials 0.000 description 16
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- 150000002500 ions Chemical class 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910003321 CoFe Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
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- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
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- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
- H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Drying Of Semiconductors (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Formation Of Insulating Films (AREA)
Description
図1に、トンネル抵抗(TMR)センサ又は記憶素子の典型的な堆積構造を示す。多くのMTJは、強磁性ピニング層110、合成反強磁性ピンド層120、トンネルバリア130、及び、強磁性フリー層140を含んで構成される。図1に示す堆積構造では、合成反強磁性ピンド層120は、強磁性ピンド層121、非磁性スペーサ122及び強磁性リファレンス層123を含んで形成される。
図5Bに、第2実施形態のMgOの堆積シーケンスを示す。
Claims (7)
- 金属層を第1の厚さに形成する金属層形成ステップと、
前記金属層を不活性ガスのプラズマに晒し、前記第1の厚さよりも小さい第2の厚さにエッチングするプラズマトリートメントを実行するプラズマ処理ステップと、
前記プラズマトリートメントを施した金属層を酸化し、トンネルバリアを構成する金属酸化物を形成する酸化ステップと、
を有するトンネルバリア形成ステップを有する磁気抵抗素子の製造方法。 - 前記第1の厚さは、10Å以上20Å以下であることを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 前記第2の厚さは、6Å以上14Å以下であることを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 前記金属層は、マグネシウムを含むことを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 前記トンネルバリア上に、金属キャップ層を形成する金属キャップ層形成ステップをさらに有することを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 前記不活性ガスは、Arガス,Krガス及びXeガスの1種以上を含むことを特徴とする請求項1に記載の磁気抵抗素子の製造方法。
- 薄膜を堆積するための薄膜堆積装置を備えた薄膜堆積チャンバと、
不活性ガスを導入するためのガス導入手段及びプラズマ生成用電極を備えたドライエッチング装置を備えたエッチングチャンバと、
酸化処理を実行するための酸化処理装置を備えた酸化チャンバと、
前記各チャンバ間で基板を搬送させる基板搬送装置と、
前記薄膜堆積装置、前記ドライエッチング装置、前記酸化処理装置及び前記基板搬送装置を制御する制御装置と、
を備え、
前記制御装置は、前記薄膜堆積チャンバで第1の厚さに金属層を形成する動作と、前記エッチングチャンバで前記金属層を不活性ガスのプラズマに晒し、前記第1の厚さよりも小さい第2の厚さにエッチングするプラズマトリートメントを実行する動作と、前記酸化チャンバで前記プラズマトリートメントを施した金属層を酸化する動作と、を実行することを特徴とする磁気抵抗素子の製造装置。
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JP2008058404 | 2008-03-07 | ||
PCT/JP2009/054327 WO2009110608A1 (ja) | 2008-03-07 | 2009-03-06 | 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置 |
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US (1) | US8318510B2 (ja) |
JP (2) | JP4527806B2 (ja) |
KR (2) | KR101298817B1 (ja) |
CN (1) | CN101960631B (ja) |
WO (1) | WO2009110608A1 (ja) |
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WO2009110608A1 (ja) | 2009-09-11 |
JP4908556B2 (ja) | 2012-04-04 |
CN101960631B (zh) | 2013-05-01 |
KR20120039686A (ko) | 2012-04-25 |
KR20100007885A (ko) | 2010-01-22 |
CN101960631A (zh) | 2011-01-26 |
US8318510B2 (en) | 2012-11-27 |
US20110086439A1 (en) | 2011-04-14 |
JPWO2009110608A1 (ja) | 2011-07-14 |
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KR101298817B1 (ko) | 2013-08-23 |
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