JP2009278130A - 磁気抵抗素子の製造方法 - Google Patents
磁気抵抗素子の製造方法 Download PDFInfo
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- JP2009278130A JP2009278130A JP2009189570A JP2009189570A JP2009278130A JP 2009278130 A JP2009278130 A JP 2009278130A JP 2009189570 A JP2009189570 A JP 2009189570A JP 2009189570 A JP2009189570 A JP 2009189570A JP 2009278130 A JP2009278130 A JP 2009278130A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 238000009832 plasma treatment Methods 0.000 claims abstract description 24
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims abstract 3
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract 2
- 150000004706 metal oxides Chemical class 0.000 claims abstract 2
- 230000003647 oxidation Effects 0.000 claims description 65
- 238000007254 oxidation reaction Methods 0.000 claims description 65
- 230000005294 ferromagnetic effect Effects 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 92
- 238000000151 deposition Methods 0.000 description 24
- 229910019236 CoFeB Inorganic materials 0.000 description 16
- 230000008021 deposition Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 230000005291 magnetic effect Effects 0.000 description 15
- 230000005684 electric field Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000001552 radio frequency sputter deposition Methods 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000005290 antiferromagnetic effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910003321 CoFe Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 102000045222 parkin Human genes 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
- H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Drying Of Semiconductors (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】 磁気抵抗素子の製造方法は、金属層を第1の厚さに形成する金属層形成ステップと、金属層を不活性ガスのプラズマに晒し、前記第1の厚さよりも小さい第2の厚さにエッチングするプラズマトリートメントを実行するプラズマ処理ステップと、前記プラズマトリートメントを施した金属層を酸化し、トンネルバリアを構成する金属酸化物を形成する酸化ステップと、を有するトンネルバリア形成ステップを有する。
【選択図】 図5A
Description
図1に、トンネル抵抗(TMR)センサ又は記憶素子の典型的な堆積構造を示す。多くのMTJは、強磁性ピニング層110、合成反強磁性ピンド層120、トンネルバリア130、及び、強磁性フリー層140を含んで構成される。図1に示す堆積構造では、合成反強磁性ピンド層120は、強磁性ピンド層121、非磁性スペーサ122及び強磁性リファレンス層123を含んで形成される。
図5Bに、第2実施形態のMgOの堆積シーケンスを示す。
Claims (1)
- 金属層を第1の厚さに形成する金属層形成ステップと、
前記金属層を不活性ガスのプラズマに晒し、前記第1の厚さよりも小さい第2の厚さにエッチングするプラズマトリートメントを実行するプラズマ処理ステップと、
前記プラズマトリートメントを施した金属層を酸化し、トンネルバリアを構成する金属酸化物を形成する酸化ステップと、
を有するトンネルバリア形成ステップを有し、
前記トンネルバリア形成ステップは、アモルファスに形成した強磁性層上に、前記トンネルバリアを形成し、
前記トンネルバリアを結晶化する第1アニーリングステップと、前記第1アニーリングステップよりも高い温度で、前記強磁性層を結晶化する第2アニーリングステップと、を有することを特徴とする磁気抵抗素子の製造方法。
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JP2009189570A JP4908556B2 (ja) | 2008-03-07 | 2009-08-18 | 磁気抵抗素子の製造方法 |
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JP2008058404 | 2008-03-07 | ||
JP2009189570A JP4908556B2 (ja) | 2008-03-07 | 2009-08-18 | 磁気抵抗素子の製造方法 |
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JP2009530719A Division JP4527806B2 (ja) | 2008-03-07 | 2009-03-06 | 磁気抵抗素子の製造方法及び磁気抵抗素子の製造装置 |
Publications (3)
Publication Number | Publication Date |
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JP2009278130A true JP2009278130A (ja) | 2009-11-26 |
JP2009278130A5 JP2009278130A5 (ja) | 2010-12-16 |
JP4908556B2 JP4908556B2 (ja) | 2012-04-04 |
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JP2009189570A Active JP4908556B2 (ja) | 2008-03-07 | 2009-08-18 | 磁気抵抗素子の製造方法 |
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Country Status (5)
Country | Link |
---|---|
US (1) | US8318510B2 (ja) |
JP (2) | JP4527806B2 (ja) |
KR (2) | KR101298817B1 (ja) |
CN (1) | CN101960631B (ja) |
WO (1) | WO2009110608A1 (ja) |
Cited By (4)
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JP2012114442A (ja) * | 2010-11-22 | 2012-06-14 | Headway Technologies Inc | トンネルバリアの形成方法および磁気トンネル接合(mtj)の形成方法 |
JP2012169626A (ja) * | 2011-02-11 | 2012-09-06 | Headway Technologies Inc | Tmrデバイスおよびその製造方法 |
JP2013145846A (ja) * | 2012-01-16 | 2013-07-25 | Ulvac Japan Ltd | トンネル磁気抵抗素子の製造方法、及びトンネル磁気抵抗素子の製造装置 |
JP5574350B2 (ja) * | 2010-12-22 | 2014-08-20 | 株式会社アルバック | トンネル磁気抵抗素子の製造方法 |
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US8692343B2 (en) * | 2010-04-26 | 2014-04-08 | Headway Technologies, Inc. | MR enhancing layer (MREL) for spintronic devices |
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US20130001717A1 (en) * | 2011-07-01 | 2013-01-03 | Yuchen Zhou | Perpendicular mram with mtj including laminated magnetic layers |
US8492169B2 (en) | 2011-08-15 | 2013-07-23 | Magic Technologies, Inc. | Magnetic tunnel junction for MRAM applications |
US8829901B2 (en) * | 2011-11-04 | 2014-09-09 | Honeywell International Inc. | Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields |
US10312433B2 (en) * | 2012-04-06 | 2019-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd | Reduction of capping layer resistance area product for magnetic device applications |
US8582253B1 (en) | 2012-06-04 | 2013-11-12 | Western Digital (Fremont), Llc | Magnetic sensor having a high spin polarization reference layer |
US8984740B1 (en) | 2012-11-30 | 2015-03-24 | Western Digital (Fremont), Llc | Process for providing a magnetic recording transducer having a smooth magnetic seed layer |
US9287494B1 (en) | 2013-06-28 | 2016-03-15 | Western Digital (Fremont), Llc | Magnetic tunnel junction (MTJ) with a magnesium oxide tunnel barrier |
US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
US10454024B2 (en) | 2014-02-28 | 2019-10-22 | Micron Technology, Inc. | Memory cells, methods of fabrication, and memory devices |
US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
US9269888B2 (en) * | 2014-04-18 | 2016-02-23 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
US9287322B2 (en) | 2014-05-12 | 2016-03-15 | Samsung Electronics Co., Ltd. | Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications |
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JP6244402B2 (ja) * | 2016-05-31 | 2017-12-06 | 東京エレクトロン株式会社 | 磁気抵抗素子の製造方法及び磁気抵抗素子の製造システム |
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JP4527806B2 (ja) | 2010-08-18 |
US8318510B2 (en) | 2012-11-27 |
JP4908556B2 (ja) | 2012-04-04 |
CN101960631A (zh) | 2011-01-26 |
KR101298817B1 (ko) | 2013-08-23 |
CN101960631B (zh) | 2013-05-01 |
WO2009110608A1 (ja) | 2009-09-11 |
KR20120039686A (ko) | 2012-04-25 |
KR20100007885A (ko) | 2010-01-22 |
KR101271353B1 (ko) | 2013-06-04 |
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US20110086439A1 (en) | 2011-04-14 |
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