JP2013168419A5 - - Google Patents

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Publication number
JP2013168419A5
JP2013168419A5 JP2012029429A JP2012029429A JP2013168419A5 JP 2013168419 A5 JP2013168419 A5 JP 2013168419A5 JP 2012029429 A JP2012029429 A JP 2012029429A JP 2012029429 A JP2012029429 A JP 2012029429A JP 2013168419 A5 JP2013168419 A5 JP 2013168419A5
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JP
Japan
Prior art keywords
interlayer insulating
insulating layer
semiconductor substrate
bonding electrode
metal film
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2012029429A
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English (en)
Japanese (ja)
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JP2013168419A (ja
JP5994274B2 (ja
Filing date
Publication date
Priority claimed from JP2012029429A external-priority patent/JP5994274B2/ja
Priority to JP2012029429A priority Critical patent/JP5994274B2/ja
Application filed filed Critical
Priority to US13/755,881 priority patent/US9147650B2/en
Priority to CN201310049242.5A priority patent/CN103247603B/zh
Publication of JP2013168419A publication Critical patent/JP2013168419A/ja
Publication of JP2013168419A5 publication Critical patent/JP2013168419A5/ja
Priority to US14/827,883 priority patent/US9716076B2/en
Publication of JP5994274B2 publication Critical patent/JP5994274B2/ja
Application granted granted Critical
Priority to US15/634,693 priority patent/US10485293B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012029429A 2012-02-14 2012-02-14 半導体装置、半導体装置の製造方法、及び、電子機器 Expired - Fee Related JP5994274B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012029429A JP5994274B2 (ja) 2012-02-14 2012-02-14 半導体装置、半導体装置の製造方法、及び、電子機器
US13/755,881 US9147650B2 (en) 2012-02-14 2013-01-31 Semiconductor device, method for manufacturing semiconductor device, and electronic apparatus
CN201310049242.5A CN103247603B (zh) 2012-02-14 2013-02-07 半导体装置、制造半导体装置的方法以及电子设备
US14/827,883 US9716076B2 (en) 2012-02-14 2015-08-17 Method for manufacturing semiconductor device with metal-containing film layer at bonding surface thereof
US15/634,693 US10485293B2 (en) 2012-02-14 2017-06-27 Semiconductor device and electronic apparatus with metal-containing film layer at bonding surface thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012029429A JP5994274B2 (ja) 2012-02-14 2012-02-14 半導体装置、半導体装置の製造方法、及び、電子機器

Publications (3)

Publication Number Publication Date
JP2013168419A JP2013168419A (ja) 2013-08-29
JP2013168419A5 true JP2013168419A5 (enExample) 2015-03-26
JP5994274B2 JP5994274B2 (ja) 2016-09-21

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JP2012029429A Expired - Fee Related JP5994274B2 (ja) 2012-02-14 2012-02-14 半導体装置、半導体装置の製造方法、及び、電子機器

Country Status (3)

Country Link
US (3) US9147650B2 (enExample)
JP (1) JP5994274B2 (enExample)
CN (1) CN103247603B (enExample)

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