JP2019140178A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019140178A JP2019140178A JP2018020308A JP2018020308A JP2019140178A JP 2019140178 A JP2019140178 A JP 2019140178A JP 2018020308 A JP2018020308 A JP 2018020308A JP 2018020308 A JP2018020308 A JP 2018020308A JP 2019140178 A JP2019140178 A JP 2019140178A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000009792 diffusion process Methods 0.000 claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 230000002265 prevention Effects 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 9
- 239000003870 refractory metal Substances 0.000 description 7
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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Abstract
Description
図7は、変形例に係る半導体装置を説明するための模式図である。図7では、第1半導体部材1が、複数の半導体ウェハを積層することによって構成されている。各半導体ウェハには、半導体メモリ等の半導体素子が形成されている。本変形例に係る半導体装置は、最下層の第1半導体部材1に第2半導体部材2を貼り合わせることによって構成される。
Claims (4)
- 第1半導体基板と、
前記第1半導体基板に設けられ、表面部に第1凹部を有する第1絶縁膜と、
前記第1凹部に設けられ、前記第1絶縁膜から露出した第1表面を有する第1金属膜と、
第2半導体基板と、
前記第2半導体基板に設けられ、前記第1絶縁膜の表面と接合された表面を有する表面部に第2凹部を有する第2絶縁膜と、
前記第2凹部に設けられ、前記第2絶縁膜から露出した第2表面を有し、前記第2表面が前記第1表面と接合された第2金属膜と、
前記第1凹部と前記第2凹部とに設けられ、前記第1金属膜及び前記第2金属膜を覆う第1拡散防止膜と、
前記第1拡散防止膜の外周部に設けられた第2拡散防止膜と、
を、備える半導体装置。 - 複数の前記第1金属膜および複数の前記第2金属膜が同じ方向に配列され、
前記第2拡散防止膜の幅が、互いに隣り合う前記第1金属膜または前記第2金属膜をそれぞれ覆う前記第1拡散防止膜間の最短距離の1/3よりも小さい、請求項1に記載の半導体装置。 - 前記第2拡散防止膜が窒化膜である、請求項1または2に記載の半導体装置。
- 前記窒化膜が、シリコン窒化膜またはシリコン炭窒化膜である、請求項3に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2018020308A JP2019140178A (ja) | 2018-02-07 | 2018-02-07 | 半導体装置 |
US16/100,646 US10685875B2 (en) | 2018-02-07 | 2018-08-10 | Semiconductor device having multiple lateral anti-diffusion films |
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Application Number | Priority Date | Filing Date | Title |
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JP2018020308A JP2019140178A (ja) | 2018-02-07 | 2018-02-07 | 半導体装置 |
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JP2019140178A true JP2019140178A (ja) | 2019-08-22 |
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JP2018020308A Pending JP2019140178A (ja) | 2018-02-07 | 2018-02-07 | 半導体装置 |
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US (1) | US10685875B2 (ja) |
JP (1) | JP2019140178A (ja) |
Cited By (3)
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