JP2012084881A - 接続構造体を実現するためのプロセス - Google Patents
接続構造体を実現するためのプロセス Download PDFInfo
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- JP2012084881A JP2012084881A JP2011221913A JP2011221913A JP2012084881A JP 2012084881 A JP2012084881 A JP 2012084881A JP 2011221913 A JP2011221913 A JP 2011221913A JP 2011221913 A JP2011221913 A JP 2011221913A JP 2012084881 A JP2012084881 A JP 2012084881A
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- diffusion barrier
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- semiconductor substrate
- connection structure
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
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Abstract
【解決手段】半導体基板(1000)は、第1の表面に沿って第2の基板(1700)と3D集積される。本発明のプロセスは、導電層から半導体基板の残部の中への素子の拡散を防止するための拡散バリア構造体(2211)を成長させる。第1の端面が、拡散バリア構造体(2211)の、第1の表面に対して平行であり、第1の表面に対して垂直な方向に沿いかつ基板から第1の表面の方に延びる拡散バリア構造体(2211)の最も外側の表面であり、横方向のミスアライメントの方向の長さを有する。3D集積された構造体において、第2の基板(1700)の導電層からの素子の拡散を集積された状態で防止するように拡散バリア構造体(2211)の長さが選択される。
【選択図】図2
Description
− 1800方向に沿った寸法7810は、任意の値、好ましくは少なくとも製造することができる値でもよい。
− 1900方向に沿った寸法7910は、任意の値、好ましくは少なくとも製造することができる値でもよい。
− 1800方向に沿った寸法7820は、前の諸実施形態において説明したやり方でミスアライメントM1800を訂正するように選択することができる。例えば、これは、少なくともミスアライメント値M1800に相当するように選択することができる。
− 1900方向に沿った寸法7920は、前の諸実施形態において説明したやり方でミスアライメントM1900を訂正するように選択することができる。例えば、これは、少なくともミスアライメント値M1900に相当するように選択することができる。
第1の半導体基板1000の導電領域2220Aおよび第2の半導体基板1700の導電領域2220Bは、少なくとも部分的に重なり合うはずであり、導電領域2220Bは、第1の半導体基板1000の導電領域2220Aおよび拡散バリア2211Aを含む領域と重なり合うだけであるはずである。そのようなやり方で、導電領域2220Bから第1の半導体基板1000の中への導電素子の拡散を防止することができる。
基板という用語は、例えば200mmまたは300mmのシリコンウェハまたはSOIウェハのような半導体ウェハに相当してもよい。基板という用語は、ダイ、すなわち、ダイシングして個々の部品にした後のウェハの1片に相当してもよい。言い換えれば、本発明の概念は、ウェハにおいて、またはダイレベルにおいて実施する3D集積に適用可能である。
1200、2200、4200、5200、6200 接続構造体
2211、4211、5211、6211、6213 拡散バリア構造体
2220、4220、5220、6220 導電層
Claims (18)
- 半導体基板(1000)において接続構造体(1200、2200、4200、5200、6200)を実現するためのプロセスであって、前記半導体基板は、
少なくとも第1の表面(1100)を有し、
前記第1の表面に沿って第2の基板(1700)と3D集積されることになっており、前記3D集積は、ミスアライメント値(M)を有する少なくとも1つの次元における横方向のミスアライメントを受け、導電層から前記半導体基板の残部の中への素子の拡散を防止するための拡散バリア構造体(2211、4211、5211、6211、6213)を成長させるステップ(S21、S41、S51、S61A、S61B)を含むプロセスにおいて、
前記拡散バリア構造体の、前記第1の表面に対して実質上平行であり、前記第1の表面に対して垂直である方向(1800)に沿いかつ前記基板から前記第1の表面の方に延びる前記拡散バリア構造体の最も外側の表面である第1の端面(2230、4230、5230、6230)は、前記横方向のミスアライメントの方向の長さ(L)を有し、前記長さは前記ミスアライメント値に依存し、
3D集積された構造において、前記第2の基板の導電層からの素子の拡散を集積された状態で防止するように前記拡散バリア構造体の長さ(L)が選択されることを特徴とするプロセス。 - 前記長さは、少なくとも前記横方向のミスアライメント値(M)と同程度の長さであることを特徴とする請求項1に記載の接続構造体を実現するためのプロセス。
- 前記長さは、少なくとも前記ミスアライメントの前記方向に沿った前記第2の基板の前記導電層の長さと同程度であることを特徴とする請求項1に記載の接続構造体を実現するためのプロセス。
- 前記拡散バリア構造体を成長させた後に、少なくとも導電層(2220、4220、6220)を成長させ、その結果、前記導電層を少なくとも前記拡散バリア構造体によって前記半導体基板から分離するステップ(S22A、S22B、S42A、S42B、S62A、S62B)をさらに含むことを特徴とする請求項1から3のいずれかに記載の接続構造体を実現するためのプロセス。
- 前記拡散バリア構造体を成長させる前に、少なくとも導電層(5220)を成長させるステップ(S52)をさらに含むことを特徴とする請求項1から3のいずれかに記載の接続構造体を実現するためのプロセス。
- 前記拡散バリア構造体を成長させる前記ステップは、拡散バリア層(2211、4211、5211)を成長させるステップ(S21、S41、S51)を含むことを特徴とする請求項1から5のいずれかに記載の接続構造体を実現するためのプロセス。
- 前記拡散バリア構造体を成長させる前記ステップは、前記拡散バリア層上に前記拡散バリア層より高い成長速度を有する第2の層(6213)を成長させるステップ(S61B)をさらに備えることを特徴とする請求項1から5のいずれかに記載の接続構造体を実現するためのプロセス。
- 前記拡散バリア層を成長させる前記ステップは、タンタル(Ta)、窒化タンタル(TaN)、窒化シリコン(Si3N4)のうちの少なくとも1つの層を成長させるステップを備えることを特徴とする請求項1から7のいずれかに記載の接続構造体を実現するためのプロセス。
- 前記拡散バリア構造体の前記長さ(L)は、20nmから1μmまでの間であることを特徴とする請求項1から7のいずれかに記載の接続構造体を実現するためのプロセス。
- 少なくとも2つの半導体基板の3D集積を実現するためのプロセスであって、
請求項1から9に記載のプロセスによる前記2つの半導体基板の少なくとも1つ、好ましくは各1つにおいて、接続構造体を実現するステップと、
前記2つの半導体基板のそれぞれの前記第1の表面に沿った前記2つの半導体基板を接着するステップと
を実施することを含むことを特徴とするプロセス。 - 前記2つの半導体基板を接着する前記ステップは、前記2つの半導体基板を相互に、具体的には接合することにより、接着するステップを含むことを特徴とする請求項10に記載の少なくとも2つの半導体基板の3D集積を実現するためのプロセス。
- 少なくとも第1の基板(1000)および第2の基板(1700)または層を含む半導体システムであって、少なくとも前記第1の基板は、接続構造体(1200、2200、4200、5200、6200)を含み、前記第1の基板は、
少なくとも第1の表面(1100)を有し、
前記第1の表面に沿った前記第2の基板(1700)または層と3D集積され、前記3D集積は、ミスアライメント値(M)を有する少なくとも1つの次元における横方向のミスアライメントを有し、
前記接続構造体は、導電層から前記基板の前記材料の中への素子の拡散を防止するための拡散バリア構造体(2211、4211、5211、6211、6213)を含む、半導体システムにおいて、
前記拡散バリア構造体は、前記拡散バリア構造体の、前記第1の表面に対して実質上平行であり、前記第1の表面に対して垂直な方向(1800)に沿いかつ前記基板から前記第1の表面の方向に延びる前記拡散バリア構造体の最も外側の表面である第1の端面(2230、4230、5230、6230)が前記横方向のミスアライメントの方向の長さ(L)を有するように構成され、前記長さは前記ミスアライメント値に依存し、
前記第2の基板の導電層からの素子の拡散を防止するように前記拡散バリア構造体の前記長さ(L)が選択されることを特徴とする半導体システム。 - 前記長さは、少なくとも前記横方向のミスアライメント値(M)と同程度の長さであることを特徴とする請求項12に記載の半導体システム。
- 前記長さは、少なくとも前記ミスアライメントの前記方向に沿った前記第2の基板の前記導電層の長さと同程度の長さであることを特徴とする請求項12に記載の半導体システム。
- 前記接続構造体は、少なくとも導電層(2220、4220、5220、6220)をさらに含み、その結果、前記導電層は、少なくとも前記拡散バリア構造体によって前記第1の基板から分離されることを特徴とする請求項12から14のいずれかに記載の半導体システム。
- 前記拡散バリア構造体は、拡散バリア層(2211、4211、5211)を含むことを特徴とする請求項12から15のいずれかに記載の半導体システム。
- 前記拡散バリア構造体は、拡散バリア層(6211)、および前記拡散バリア層上に前記拡散バリア層より高い成長速度を有する第2の層(6213)を含むことを特徴とする請求項12から15のいずれかに記載の半導体システム。
- 前記拡散バリア層は、タンタル(Ta)、窒化タンタル(TaN)、窒化シリコン(Si3N4)のうちのいずれかであることを特徴とする請求項12から17のいずれかに記載の半導体システム。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011049270A (ja) * | 2009-08-26 | 2011-03-10 | Sony Corp | 半導体装置の製造方法および半導体装置 |
JP2013118373A (ja) * | 2011-12-02 | 2013-06-13 | Samsung Electronics Co Ltd | 銅を含む電極連結構造体 |
JP2019140178A (ja) * | 2018-02-07 | 2019-08-22 | 東芝メモリ株式会社 | 半導体装置 |
Families Citing this family (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
FR2966283B1 (fr) * | 2010-10-14 | 2012-11-30 | Soi Tec Silicon On Insulator Tech Sa | Procede pour realiser une structure de collage |
FR2977069B1 (fr) | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire |
US8735219B2 (en) | 2012-08-30 | 2014-05-27 | Ziptronix, Inc. | Heterogeneous annealing method and device |
FR2995445B1 (fr) | 2012-09-07 | 2016-01-08 | Soitec Silicon On Insulator | Procede de fabrication d'une structure en vue d'une separation ulterieure |
US9443796B2 (en) | 2013-03-15 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Air trench in packages incorporating hybrid bonding |
WO2015000527A1 (de) | 2013-07-05 | 2015-01-08 | Ev Group E. Thallner Gmbh | Verfahren zum bonden von metallischen kontaktflächen unter lösen einer auf einer der kontaktflächen aufgebrachten opferschicht in mindestens einer der kontaktflächen |
TWI676279B (zh) * | 2013-10-04 | 2019-11-01 | 新力股份有限公司 | 半導體裝置及固體攝像元件 |
FR3017993B1 (fr) * | 2014-02-27 | 2017-08-11 | Commissariat Energie Atomique | Procede de realisation d'une structure par assemblage d'au moins deux elements par collage direct |
US20150262902A1 (en) | 2014-03-12 | 2015-09-17 | Invensas Corporation | Integrated circuits protected by substrates with cavities, and methods of manufacture |
KR102161793B1 (ko) | 2014-07-18 | 2020-10-06 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
FR3025051A1 (fr) * | 2014-08-22 | 2016-02-26 | Commissariat Energie Atomique | Procede de realisation d'un circuit integre par collage direct de substrats comprenant en surface des portions de cuivre et de materiau dielectrique |
KR102211143B1 (ko) | 2014-11-13 | 2021-02-02 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
KR102267168B1 (ko) | 2014-12-02 | 2021-06-21 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
US11069734B2 (en) | 2014-12-11 | 2021-07-20 | Invensas Corporation | Image sensor device |
US9741620B2 (en) | 2015-06-24 | 2017-08-22 | Invensas Corporation | Structures and methods for reliable packages |
US10886250B2 (en) | 2015-07-10 | 2021-01-05 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
US9953941B2 (en) | 2015-08-25 | 2018-04-24 | Invensas Bonding Technologies, Inc. | Conductive barrier direct hybrid bonding |
US9893058B2 (en) | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
CN105486333B (zh) * | 2015-11-19 | 2018-08-24 | 业成光电(深圳)有限公司 | 改善窄线距接合垫压合错位之感测器结构 |
US9852988B2 (en) | 2015-12-18 | 2017-12-26 | Invensas Bonding Technologies, Inc. | Increased contact alignment tolerance for direct bonding |
US10446532B2 (en) | 2016-01-13 | 2019-10-15 | Invensas Bonding Technologies, Inc. | Systems and methods for efficient transfer of semiconductor elements |
US10204893B2 (en) | 2016-05-19 | 2019-02-12 | Invensas Bonding Technologies, Inc. | Stacked dies and methods for forming bonded structures |
US10446487B2 (en) | 2016-09-30 | 2019-10-15 | Invensas Bonding Technologies, Inc. | Interface structures and methods for forming same |
US10580735B2 (en) | 2016-10-07 | 2020-03-03 | Xcelsis Corporation | Stacked IC structure with system level wiring on multiple sides of the IC die |
TWI822659B (zh) | 2016-10-27 | 2023-11-21 | 美商艾德亞半導體科技有限責任公司 | 用於低溫接合的結構和方法 |
KR102524962B1 (ko) * | 2016-11-14 | 2023-04-21 | 삼성전자주식회사 | 기판 구조체 제조 방법 및 이를 이용하여 제조된 기판 구조체 |
US10002844B1 (en) | 2016-12-21 | 2018-06-19 | Invensas Bonding Technologies, Inc. | Bonded structures |
US10796936B2 (en) | 2016-12-22 | 2020-10-06 | Invensas Bonding Technologies, Inc. | Die tray with channels |
CN110178212B (zh) | 2016-12-28 | 2024-01-09 | 艾德亚半导体接合科技有限公司 | 堆栈基板的处理 |
US20180182665A1 (en) | 2016-12-28 | 2018-06-28 | Invensas Bonding Technologies, Inc. | Processed Substrate |
KR20230156179A (ko) | 2016-12-29 | 2023-11-13 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 집적된 수동 컴포넌트를 구비한 접합된 구조체 |
TWI738947B (zh) | 2017-02-09 | 2021-09-11 | 美商英帆薩斯邦德科技有限公司 | 接合結構與形成接合結構的方法 |
WO2018169968A1 (en) | 2017-03-16 | 2018-09-20 | Invensas Corporation | Direct-bonded led arrays and applications |
US10515913B2 (en) | 2017-03-17 | 2019-12-24 | Invensas Bonding Technologies, Inc. | Multi-metal contact structure |
US10508030B2 (en) | 2017-03-21 | 2019-12-17 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
US10784191B2 (en) | 2017-03-31 | 2020-09-22 | Invensas Bonding Technologies, Inc. | Interface structures and methods for forming same |
US10269756B2 (en) | 2017-04-21 | 2019-04-23 | Invensas Bonding Technologies, Inc. | Die processing |
US10529634B2 (en) | 2017-05-11 | 2020-01-07 | Invensas Bonding Technologies, Inc. | Probe methodology for ultrafine pitch interconnects |
US10879212B2 (en) | 2017-05-11 | 2020-12-29 | Invensas Bonding Technologies, Inc. | Processed stacked dies |
US10446441B2 (en) | 2017-06-05 | 2019-10-15 | Invensas Corporation | Flat metal features for microelectronics applications |
US10217720B2 (en) | 2017-06-15 | 2019-02-26 | Invensas Corporation | Multi-chip modules formed using wafer-level processing of a reconstitute wafer |
US10840205B2 (en) | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
US11195748B2 (en) | 2017-09-27 | 2021-12-07 | Invensas Corporation | Interconnect structures and methods for forming same |
US11031285B2 (en) * | 2017-10-06 | 2021-06-08 | Invensas Bonding Technologies, Inc. | Diffusion barrier collar for interconnects |
US10658313B2 (en) | 2017-12-11 | 2020-05-19 | Invensas Bonding Technologies, Inc. | Selective recess |
US11011503B2 (en) | 2017-12-15 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Direct-bonded optoelectronic interconnect for high-density integrated photonics |
US11380597B2 (en) | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
US10923408B2 (en) | 2017-12-22 | 2021-02-16 | Invensas Bonding Technologies, Inc. | Cavity packages |
US10727219B2 (en) | 2018-02-15 | 2020-07-28 | Invensas Bonding Technologies, Inc. | Techniques for processing devices |
US11169326B2 (en) | 2018-02-26 | 2021-11-09 | Invensas Bonding Technologies, Inc. | Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects |
US11256004B2 (en) | 2018-03-20 | 2022-02-22 | Invensas Bonding Technologies, Inc. | Direct-bonded lamination for improved image clarity in optical devices |
US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
US10790262B2 (en) | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
US11244916B2 (en) | 2018-04-11 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
US10964664B2 (en) | 2018-04-20 | 2021-03-30 | Invensas Bonding Technologies, Inc. | DBI to Si bonding for simplified handle wafer |
US11004757B2 (en) | 2018-05-14 | 2021-05-11 | Invensas Bonding Technologies, Inc. | Bonded structures |
US11276676B2 (en) | 2018-05-15 | 2022-03-15 | Invensas Bonding Technologies, Inc. | Stacked devices and methods of fabrication |
CN112514059B (zh) | 2018-06-12 | 2024-05-24 | 隔热半导体粘合技术公司 | 堆叠微电子部件的层间连接 |
US11393779B2 (en) | 2018-06-13 | 2022-07-19 | Invensas Bonding Technologies, Inc. | Large metal pads over TSV |
WO2019241417A1 (en) | 2018-06-13 | 2019-12-19 | Invensas Bonding Technologies, Inc. | Tsv as pad |
US10867943B2 (en) * | 2018-06-15 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Die structure, die stack structure and method of fabricating the same |
US10910344B2 (en) | 2018-06-22 | 2021-02-02 | Xcelsis Corporation | Systems and methods for releveled bump planes for chiplets |
US11664357B2 (en) | 2018-07-03 | 2023-05-30 | Adeia Semiconductor Bonding Technologies Inc. | Techniques for joining dissimilar materials in microelectronics |
US11462419B2 (en) | 2018-07-06 | 2022-10-04 | Invensas Bonding Technologies, Inc. | Microelectronic assemblies |
US11158606B2 (en) | 2018-07-06 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Molded direct bonded and interconnected stack |
US11515291B2 (en) | 2018-08-28 | 2022-11-29 | Adeia Semiconductor Inc. | Integrated voltage regulator and passive components |
US20200075533A1 (en) | 2018-08-29 | 2020-03-05 | Invensas Bonding Technologies, Inc. | Bond enhancement in microelectronics by trapping contaminants and arresting cracks during direct-bonding processes |
US11011494B2 (en) | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
US11158573B2 (en) | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
US11244920B2 (en) | 2018-12-18 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Method and structures for low temperature device bonding |
WO2020150159A1 (en) | 2019-01-14 | 2020-07-23 | Invensas Bonding Technologies, Inc. | Bonded structures |
US11901281B2 (en) | 2019-03-11 | 2024-02-13 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structures with integrated passive component |
US10854578B2 (en) | 2019-03-29 | 2020-12-01 | Invensas Corporation | Diffused bitline replacement in stacked wafer memory |
US11610846B2 (en) * | 2019-04-12 | 2023-03-21 | Adeia Semiconductor Bonding Technologies Inc. | Protective elements for bonded structures including an obstructive element |
US11205625B2 (en) | 2019-04-12 | 2021-12-21 | Invensas Bonding Technologies, Inc. | Wafer-level bonding of obstructive elements |
US11373963B2 (en) | 2019-04-12 | 2022-06-28 | Invensas Bonding Technologies, Inc. | Protective elements for bonded structures |
US11355404B2 (en) | 2019-04-22 | 2022-06-07 | Invensas Bonding Technologies, Inc. | Mitigating surface damage of probe pads in preparation for direct bonding of a substrate |
US11385278B2 (en) * | 2019-05-23 | 2022-07-12 | Invensas Bonding Technologies, Inc. | Security circuitry for bonded structures |
US11296053B2 (en) | 2019-06-26 | 2022-04-05 | Invensas Bonding Technologies, Inc. | Direct bonded stack structures for increased reliability and improved yield in microelectronics |
US11862602B2 (en) | 2019-11-07 | 2024-01-02 | Adeia Semiconductor Technologies Llc | Scalable architecture for reduced cycles across SOC |
US11762200B2 (en) | 2019-12-17 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded optical devices |
US11876076B2 (en) | 2019-12-20 | 2024-01-16 | Adeia Semiconductor Technologies Llc | Apparatus for non-volatile random access memory stacks |
WO2021133741A1 (en) | 2019-12-23 | 2021-07-01 | Invensas Bonding Technologies, Inc. | Electrical redundancy for bonded structures |
US11721653B2 (en) | 2019-12-23 | 2023-08-08 | Adeia Semiconductor Bonding Technologies Inc. | Circuitry for electrical redundancy in bonded structures |
US11088076B2 (en) * | 2019-12-27 | 2021-08-10 | Sandisk Technologies Llc | Bonding pads embedded in a dielectric diffusion barrier and having recessed metallic liners |
US11742314B2 (en) | 2020-03-31 | 2023-08-29 | Adeia Semiconductor Bonding Technologies Inc. | Reliable hybrid bonded apparatus |
US11735523B2 (en) | 2020-05-19 | 2023-08-22 | Adeia Semiconductor Bonding Technologies Inc. | Laterally unconfined structure |
KR20210151569A (ko) | 2020-06-05 | 2021-12-14 | 삼성전자주식회사 | 반도체 장치 및 이를 포함하는 반도체 패키지 |
US11631647B2 (en) | 2020-06-30 | 2023-04-18 | Adeia Semiconductor Bonding Technologies Inc. | Integrated device packages with integrated device die and dummy element |
US11764177B2 (en) | 2020-09-04 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structure with interconnect structure |
US11728273B2 (en) | 2020-09-04 | 2023-08-15 | Adeia Semiconductor Bonding Technologies Inc. | Bonded structure with interconnect structure |
US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03106012A (ja) * | 1989-09-20 | 1991-05-02 | Fujitsu Ltd | 半導体装置の製造方法およびその方法を実施する製造装置 |
JPH06260594A (ja) * | 1993-02-11 | 1994-09-16 | Siemens Ag | 三次元回路装置の製造方法 |
JP2011049270A (ja) * | 2009-08-26 | 2011-03-10 | Sony Corp | 半導体装置の製造方法および半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4701424A (en) * | 1986-10-30 | 1987-10-20 | Ford Motor Company | Hermetic sealing of silicon |
US5880010A (en) * | 1994-07-12 | 1999-03-09 | Sun Microsystems, Inc. | Ultrathin electronics |
US6661085B2 (en) * | 2002-02-06 | 2003-12-09 | Intel Corporation | Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stack |
US6962835B2 (en) * | 2003-02-07 | 2005-11-08 | Ziptronix, Inc. | Method for room temperature metal direct bonding |
US20060003548A1 (en) * | 2004-06-30 | 2006-01-05 | Kobrinsky Mauro J | Highly compliant plate for wafer bonding |
US7354862B2 (en) | 2005-04-18 | 2008-04-08 | Intel Corporation | Thin passivation layer on 3D devices |
US20060292823A1 (en) * | 2005-06-28 | 2006-12-28 | Shriram Ramanathan | Method and apparatus for bonding wafers |
US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
US7977798B2 (en) * | 2007-07-26 | 2011-07-12 | Infineon Technologies Ag | Integrated circuit having a semiconductor substrate with a barrier layer |
US7998864B2 (en) | 2008-01-29 | 2011-08-16 | International Business Machines Corporation | Noble metal cap for interconnect structures |
KR101069287B1 (ko) * | 2009-04-29 | 2011-10-04 | 주식회사 하이닉스반도체 | 반도체 패키지 및 이의 제조 방법 |
JP5304536B2 (ja) * | 2009-08-24 | 2013-10-02 | ソニー株式会社 | 半導体装置 |
FR2966283B1 (fr) * | 2010-10-14 | 2012-11-30 | Soi Tec Silicon On Insulator Tech Sa | Procede pour realiser une structure de collage |
-
2010
- 2010-10-14 FR FR1004050A patent/FR2966283B1/fr not_active Expired - Fee Related
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2011
- 2011-08-22 TW TW100130027A patent/TWI426581B/zh not_active IP Right Cessation
- 2011-08-23 SG SG2011060803A patent/SG180074A1/en unknown
- 2011-08-26 US US13/219,099 patent/US9224704B2/en not_active Expired - Fee Related
- 2011-10-06 JP JP2011221913A patent/JP5536731B2/ja not_active Expired - Fee Related
- 2011-10-11 CN CN201110307001.7A patent/CN102456587B/zh not_active Expired - Fee Related
- 2011-10-12 KR KR1020110104312A patent/KR101300811B1/ko active IP Right Grant
- 2011-10-13 EP EP11290473.5A patent/EP2445000A3/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03106012A (ja) * | 1989-09-20 | 1991-05-02 | Fujitsu Ltd | 半導体装置の製造方法およびその方法を実施する製造装置 |
JPH06260594A (ja) * | 1993-02-11 | 1994-09-16 | Siemens Ag | 三次元回路装置の製造方法 |
JP2011049270A (ja) * | 2009-08-26 | 2011-03-10 | Sony Corp | 半導体装置の製造方法および半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011049270A (ja) * | 2009-08-26 | 2011-03-10 | Sony Corp | 半導体装置の製造方法および半導体装置 |
JP2013118373A (ja) * | 2011-12-02 | 2013-06-13 | Samsung Electronics Co Ltd | 銅を含む電極連結構造体 |
JP2019140178A (ja) * | 2018-02-07 | 2019-08-22 | 東芝メモリ株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
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KR20120038897A (ko) | 2012-04-24 |
CN102456587B (zh) | 2015-04-22 |
KR101300811B1 (ko) | 2013-08-26 |
US20120094469A1 (en) | 2012-04-19 |
TWI426581B (zh) | 2014-02-11 |
JP5536731B2 (ja) | 2014-07-02 |
TW201234522A (en) | 2012-08-16 |
EP2445000A3 (en) | 2013-06-05 |
EP2445000A2 (en) | 2012-04-25 |
CN102456587A (zh) | 2012-05-16 |
SG180074A1 (en) | 2012-05-30 |
FR2966283B1 (fr) | 2012-11-30 |
FR2966283A1 (fr) | 2012-04-20 |
US9224704B2 (en) | 2015-12-29 |
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