JP5246831B2 - 電子デバイス及びそれを形成する方法 - Google Patents
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
12 ウエハ
14 金属層
16 ビア
18 導電体
19 層間誘電膜(ILD)
20 ハンドル層
22 埋込み酸化層(BOX)層
26 半導体チップ
28 ハンドル・ウエハ層
30 キャップ層
32 金属層
34 スルービア
36 接点形状
40 接着剤
50 半導体チップ
52 配線形状
100 ゲート電極
102 能動SOI領域
104 ゲート電極
106 能動SOI領域
Claims (12)
- マルチチップ・スタックを形成する重ね合わせ接着関係にある少なくとも2つの集積回路チップまたは素子を含む電子デバイスであって、
複数の誘電層および金属層と、キャップ層からなる第1の表面と、ハンドル層からなる反対側の末端面とを含む多層構造を有する前記集積回路チップまたは素子のうちの第1のチップまたは素子と、
複数の誘電層および金属層とキャップ層からなる第1の表面とを含む多層構造を有する前記集積回路チップまたは素子のうちの第2のチップまたは素子とを含み、
前記第2の集積回路チップまたは素子は反転位置にあり、前記第1の集積回路チップまたは素子の前記キャップ層と面係合した状態で接着固定され、前記第2の集積回路チップまたは素子は、前記第1の集積回路チップまたは素子内の導電層を前記マルチチップ・スタックの上面に接続し、前記第2の集積回路チップまたは素子内の導電層を前記マルチチップ・スタックの上面に接続する導体充填ビアを有み、
前記第1および第2の半導体チップまたは素子は、接着層を介して接着され、この接着層は、樹枝状アミン結合剤によって活性化される無水マレイン酸ポリマーからなる接着剤薄膜を含む、電子デバイス。 - 前記第2の集積回路チップまたは素子は、前記2つのチップまたは素子の接着固定後に除去される基板上に形成された請求項1に記載の電子デバイス。
- 前記第1のチップまたは素子は、複数の接着固定されたマルチチップ集積回路スタックからなる、請求項1に記載の電子デバイス。
- 前記第2の半導体チップまたは素子は、前記第1のチップまたは素子から前記上面まで延びて、前記第2の集積回路チップまたは素子内の導電層と交わり、前記少なくとも2つのチップまたは素子の前記金属層間の電気的接続を提供するように構成された少なくとも1つのビアを含む請求項1に記載の電子デバイス。
- 前記ハンドル層はシリコンからなる請求項1に記載の電子デバイス。
- 前記第2の半導体チップまたは素子内に形成された前記少なくとも1つのスルービアは、外部回路から前記第1および第2の半導体チップまたは素子の電気構成要素への電気的接続と、前記第1および第2の半導体チップまたは素子の電気構成要素間の電気的接続とを実現するように、導電材料が充填されている請求項4に記載の電子デバイス。
- 前記第1の半導体チップまたは素子の基板は、Si、SOI、SiGe及びGaAsを含む材料のグループから選択される請求項1に記載の電子デバイス。
- 前記第2の半導体チップまたは素子には、さらに他の電気接点を有し、それと接続するマルチチップ・スタックを形成するように少なくとも第3の前記半導体チップまたは素子が選択的に接着ボンディングされる請求項1に記載の電子デバイス。
- 前記第2の半導体チップまたは素子はSOI層を含む請求項1に記載の電子デバイス。
- マルチチップ・スタックを形成する重ね合わせ接着関係にある少なくとも2つの集積回路チップまたは素子を含む電子デバイスを形成する方法であって、
複数の誘電層および金属層を含む多層構造を有する前記集積回路チップまたは素子のうちの第1の1つのチップまたは素子を設けるステップであって、キャップ層からなる第1の表面と、ハンドル層からなる反対側の末端面とを形成するステップを含むステップと、 複数の誘電層および金属層を含む多層構造を有する前記集積回路チップまたは素子のうちの第2の1つのチップまたは素子を設けるステップであって、キャップ層からなる第1の表面とハンドル層からなる反対側の末端面とを形成するステップを含むステップとを含み、
前記第2の集積回路チップまたは素子は、反転位置に配置されて前記第1の集積回路チップまたは素子の前記キャップ層と面係合状態で接着固定され、前記第2の集積回路チップまたは素子は、前記第1の集積回路チップまたは素子内の導電層を前記マルチチップ・スタックの上面に接続し、前記第2の集積回路チップまたは素子内の導電層を前記マルチチップ・スタックの上面に接続する導電材料で充填されたビアを備えて形成され、
前記接着固定には接着層が用いられ、この接着層は、樹枝状アミン結合剤によって活性化される無水マレイン酸ポリマーからなる接着剤薄膜を含む、方法。 - 前記第2の半導体チップまたは素子には、外部回路から前記第1および第2の半導体チップまたは素子の電気構成要素への電気的接続と前記少なくとも2つのチップまたは素子の前記金属層間の電気的接続を提供するように前記第1のチップまたは素子から前記上面に延びる少なくとも1つのスルービアが形成され、前記スルービアは、前記第2の半導体チップまたは素子がウエハの形態のままの状態で画定されている請求項10に記載の方法。
- 前記接着層は、未充填の前記少なくとも1つのスルービアをエッチング用マスクとして使用して前記少なくとも1つのスルービアの底部からエッチングされる請求項11に記載の方法。
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US11/266,456 US7528494B2 (en) | 2005-11-03 | 2005-11-03 | Accessible chip stack and process of manufacturing thereof |
US11/266456 | 2005-11-03 |
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JP2007129233A JP2007129233A (ja) | 2007-05-24 |
JP5246831B2 true JP5246831B2 (ja) | 2013-07-24 |
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US (1) | US7528494B2 (ja) |
JP (1) | JP5246831B2 (ja) |
CN (1) | CN1959983A (ja) |
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JP4127095B2 (ja) * | 2003-03-27 | 2008-07-30 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4264640B2 (ja) * | 2003-08-19 | 2009-05-20 | ソニー株式会社 | 半導体装置の製造方法 |
JP4312631B2 (ja) * | 2004-03-03 | 2009-08-12 | 三菱電機株式会社 | ウエハレベルパッケージ構造体とその製造方法、及びそのウエハレベルパッケージ構造体から分割された素子 |
KR100618698B1 (ko) * | 2004-06-21 | 2006-09-08 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
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JP2007129233A (ja) | 2007-05-24 |
US20070096263A1 (en) | 2007-05-03 |
US7528494B2 (en) | 2009-05-05 |
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