JP2013038112A5 - - Google Patents

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Publication number
JP2013038112A5
JP2013038112A5 JP2011170666A JP2011170666A JP2013038112A5 JP 2013038112 A5 JP2013038112 A5 JP 2013038112A5 JP 2011170666 A JP2011170666 A JP 2011170666A JP 2011170666 A JP2011170666 A JP 2011170666A JP 2013038112 A5 JP2013038112 A5 JP 2013038112A5
Authority
JP
Japan
Prior art keywords
insulating layer
bonding electrode
semiconductor device
layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011170666A
Other languages
English (en)
Japanese (ja)
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JP2013038112A (ja
JP5803398B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2011170666A external-priority patent/JP5803398B2/ja
Priority to JP2011170666A priority Critical patent/JP5803398B2/ja
Priority to TW101121190A priority patent/TWI495041B/zh
Priority to US13/533,526 priority patent/US8896125B2/en
Priority to KR1020120069684A priority patent/KR102030852B1/ko
Priority to CN201210233277.XA priority patent/CN102867847B/zh
Publication of JP2013038112A publication Critical patent/JP2013038112A/ja
Priority to US14/467,852 priority patent/US9111763B2/en
Publication of JP2013038112A5 publication Critical patent/JP2013038112A5/ja
Priority to US14/718,942 priority patent/US9443802B2/en
Application granted granted Critical
Publication of JP5803398B2 publication Critical patent/JP5803398B2/ja
Priority to US15/228,894 priority patent/US9911778B2/en
Priority to US15/228,860 priority patent/US10038024B2/en
Priority to US15/992,908 priority patent/US10431621B2/en
Priority to US16/410,877 priority patent/US10985102B2/en
Priority to KR1020190069266A priority patent/KR20190071647A/ko
Priority to KR1020200069977A priority patent/KR102298787B1/ko
Priority to US17/194,641 priority patent/US11569123B2/en
Priority to KR1020210112763A priority patent/KR102439964B1/ko
Priority to KR1020220109225A priority patent/KR102673911B1/ko
Priority to KR1020240073260A priority patent/KR20240085908A/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011170666A 2011-07-05 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器 Active JP5803398B2 (ja)

Priority Applications (17)

Application Number Priority Date Filing Date Title
JP2011170666A JP5803398B2 (ja) 2011-08-04 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器
TW101121190A TWI495041B (zh) 2011-07-05 2012-06-13 半導體裝置、用於半導體裝置之製造方法及電子設備
US13/533,526 US8896125B2 (en) 2011-07-05 2012-06-26 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020120069684A KR102030852B1 (ko) 2011-07-05 2012-06-28 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
CN201210233277.XA CN102867847B (zh) 2011-07-05 2012-07-05 半导体器件、半导体器件制造方法及电子装置
US14/467,852 US9111763B2 (en) 2011-07-05 2014-08-25 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US14/718,942 US9443802B2 (en) 2011-07-05 2015-05-21 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,894 US9911778B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,860 US10038024B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/992,908 US10431621B2 (en) 2011-07-05 2018-05-30 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US16/410,877 US10985102B2 (en) 2011-07-05 2019-05-13 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020190069266A KR20190071647A (ko) 2011-07-05 2019-06-12 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
KR1020200069977A KR102298787B1 (ko) 2011-07-05 2020-06-10 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
US17/194,641 US11569123B2 (en) 2011-07-05 2021-03-08 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020210112763A KR102439964B1 (ko) 2011-07-05 2021-08-26 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
KR1020220109225A KR102673911B1 (ko) 2011-07-05 2022-08-30 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치
KR1020240073260A KR20240085908A (ko) 2011-07-05 2024-06-04 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011170666A JP5803398B2 (ja) 2011-08-04 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器

Publications (3)

Publication Number Publication Date
JP2013038112A JP2013038112A (ja) 2013-02-21
JP2013038112A5 true JP2013038112A5 (enExample) 2014-09-18
JP5803398B2 JP5803398B2 (ja) 2015-11-04

Family

ID=47887475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011170666A Active JP5803398B2 (ja) 2011-07-05 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器

Country Status (1)

Country Link
JP (1) JP5803398B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102161793B1 (ko) 2014-07-18 2020-10-06 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102267168B1 (ko) 2014-12-02 2021-06-21 삼성전자주식회사 반도체 장치의 제조 방법
JP2016181531A (ja) * 2015-03-23 2016-10-13 ソニー株式会社 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器
CN107615481B (zh) * 2015-05-18 2020-07-21 索尼公司 半导体装置和成像装置
JP6711614B2 (ja) * 2015-12-24 2020-06-17 キヤノン株式会社 半導体装置
JP6856983B2 (ja) * 2016-06-30 2021-04-14 キヤノン株式会社 光電変換装置及びカメラ
WO2020079945A1 (ja) * 2018-10-15 2020-04-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP7321724B2 (ja) * 2019-03-05 2023-08-07 キヤノン株式会社 半導体装置および機器
JP2020191334A (ja) * 2019-05-20 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
EP4169971A4 (en) * 2020-06-22 2024-07-10 Sekisui Chemical Co., Ltd. LAMINATE, CURABLE RESIN COMPOSITION, METHOD FOR MANUFACTURING LAMINATE, METHOD FOR MANUFACTURING SUBSTRATE HAVING JUNCTION ELECTRODE, SEMICONDUCTOR DEVICE, AND IMAGE CAPTURE DEVICE
JP2022082187A (ja) * 2020-11-20 2022-06-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
KR20240121703A (ko) * 2021-12-23 2024-08-09 세키스이가가쿠 고교가부시키가이샤 경화성 수지 조성물, 경화막, 적층체, 촬상 장치, 반도체 장치, 적층체의 제조 방법 및 접합 전극을 갖는 소자의 제조 방법
DE112023001636T5 (de) * 2022-03-30 2025-04-03 Sony Semiconductor Solutions Corporation Halbleitervorrichtung und verfahren zum produzieren einer halbleitervorrichtung
WO2024202901A1 (ja) * 2023-03-30 2024-10-03 富士フイルム株式会社 接合体の製造方法、処理液および処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7049701B2 (en) * 2003-10-15 2006-05-23 Kabushiki Kaisha Toshiba Semiconductor device using insulating film of low dielectric constant as interlayer insulating film
JP2005142553A (ja) * 2003-10-15 2005-06-02 Toshiba Corp 半導体装置
JP5407660B2 (ja) * 2009-08-26 2014-02-05 ソニー株式会社 半導体装置の製造方法
JP2011146563A (ja) * 2010-01-15 2011-07-28 Panasonic Corp 半導体装置

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