JP5803398B2 - 半導体装置、半導体装置の製造方法、及び、電子機器 - Google Patents

半導体装置、半導体装置の製造方法、及び、電子機器 Download PDF

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Publication number
JP5803398B2
JP5803398B2 JP2011170666A JP2011170666A JP5803398B2 JP 5803398 B2 JP5803398 B2 JP 5803398B2 JP 2011170666 A JP2011170666 A JP 2011170666A JP 2011170666 A JP2011170666 A JP 2011170666A JP 5803398 B2 JP5803398 B2 JP 5803398B2
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Japan
Prior art keywords
layer
insulating layer
bonding
electrode
protective layer
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JP2011170666A
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Japanese (ja)
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JP2013038112A5 (enExample
JP2013038112A (ja
Inventor
恵永 香川
恵永 香川
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2011170666A priority Critical patent/JP5803398B2/ja
Priority to TW101121190A priority patent/TWI495041B/zh
Priority to US13/533,526 priority patent/US8896125B2/en
Priority to KR1020120069684A priority patent/KR102030852B1/ko
Priority to CN201210233277.XA priority patent/CN102867847B/zh
Publication of JP2013038112A publication Critical patent/JP2013038112A/ja
Priority to US14/467,852 priority patent/US9111763B2/en
Publication of JP2013038112A5 publication Critical patent/JP2013038112A5/ja
Priority to US14/718,942 priority patent/US9443802B2/en
Application granted granted Critical
Publication of JP5803398B2 publication Critical patent/JP5803398B2/ja
Priority to US15/228,894 priority patent/US9911778B2/en
Priority to US15/228,860 priority patent/US10038024B2/en
Priority to US15/992,908 priority patent/US10431621B2/en
Priority to US16/410,877 priority patent/US10985102B2/en
Priority to KR1020190069266A priority patent/KR20190071647A/ko
Priority to KR1020200069977A priority patent/KR102298787B1/ko
Priority to US17/194,641 priority patent/US11569123B2/en
Priority to KR1020210112763A priority patent/KR102439964B1/ko
Priority to KR1020220109225A priority patent/KR102673911B1/ko
Priority to KR1020240073260A priority patent/KR20240085908A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02123—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body inside the bonding area
    • H01L2224/02125—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02123—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body inside the bonding area
    • H01L2224/02125—Reinforcing structures
    • H01L2224/02126—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05547—Structure comprising a core and a coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/0805—Shape
    • H01L2224/08057—Shape in side view
    • H01L2224/08058—Shape in side view being non uniform along the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08121—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the connected bonding areas being not aligned with respect to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8034—Bonding interfaces of the bonding area
    • H01L2224/80357—Bonding interfaces of the bonding area being flush with the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H01L2224/80895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
    • H01L2224/80896—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically insulating surfaces, e.g. oxide or nitride layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011170666A 2011-07-05 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器 Active JP5803398B2 (ja)

Priority Applications (17)

Application Number Priority Date Filing Date Title
JP2011170666A JP5803398B2 (ja) 2011-08-04 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器
TW101121190A TWI495041B (zh) 2011-07-05 2012-06-13 半導體裝置、用於半導體裝置之製造方法及電子設備
US13/533,526 US8896125B2 (en) 2011-07-05 2012-06-26 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020120069684A KR102030852B1 (ko) 2011-07-05 2012-06-28 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
CN201210233277.XA CN102867847B (zh) 2011-07-05 2012-07-05 半导体器件、半导体器件制造方法及电子装置
US14/467,852 US9111763B2 (en) 2011-07-05 2014-08-25 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US14/718,942 US9443802B2 (en) 2011-07-05 2015-05-21 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,894 US9911778B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,860 US10038024B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/992,908 US10431621B2 (en) 2011-07-05 2018-05-30 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US16/410,877 US10985102B2 (en) 2011-07-05 2019-05-13 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020190069266A KR20190071647A (ko) 2011-07-05 2019-06-12 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
KR1020200069977A KR102298787B1 (ko) 2011-07-05 2020-06-10 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
US17/194,641 US11569123B2 (en) 2011-07-05 2021-03-08 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020210112763A KR102439964B1 (ko) 2011-07-05 2021-08-26 반도체 장치, 반도체 장치의 제조 방법 및 전자 기기
KR1020220109225A KR102673911B1 (ko) 2011-07-05 2022-08-30 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치
KR1020240073260A KR20240085908A (ko) 2011-07-05 2024-06-04 반도체 장치, 반도체 장치의 제조 방법 및 전자 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011170666A JP5803398B2 (ja) 2011-08-04 2011-08-04 半導体装置、半導体装置の製造方法、及び、電子機器

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JP2013038112A JP2013038112A (ja) 2013-02-21
JP2013038112A5 JP2013038112A5 (enExample) 2014-09-18
JP5803398B2 true JP5803398B2 (ja) 2015-11-04

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102161793B1 (ko) 2014-07-18 2020-10-06 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102267168B1 (ko) 2014-12-02 2021-06-21 삼성전자주식회사 반도체 장치의 제조 방법
JP2016181531A (ja) * 2015-03-23 2016-10-13 ソニー株式会社 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器
CN107615481B (zh) * 2015-05-18 2020-07-21 索尼公司 半导体装置和成像装置
JP6711614B2 (ja) * 2015-12-24 2020-06-17 キヤノン株式会社 半導体装置
JP6856983B2 (ja) * 2016-06-30 2021-04-14 キヤノン株式会社 光電変換装置及びカメラ
WO2020079945A1 (ja) * 2018-10-15 2020-04-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP7321724B2 (ja) * 2019-03-05 2023-08-07 キヤノン株式会社 半導体装置および機器
JP2020191334A (ja) * 2019-05-20 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
EP4169971A4 (en) * 2020-06-22 2024-07-10 Sekisui Chemical Co., Ltd. LAMINATE, CURABLE RESIN COMPOSITION, METHOD FOR MANUFACTURING LAMINATE, METHOD FOR MANUFACTURING SUBSTRATE HAVING JUNCTION ELECTRODE, SEMICONDUCTOR DEVICE, AND IMAGE CAPTURE DEVICE
JP2022082187A (ja) * 2020-11-20 2022-06-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及びその製造方法、並びに電子機器
KR20240121703A (ko) * 2021-12-23 2024-08-09 세키스이가가쿠 고교가부시키가이샤 경화성 수지 조성물, 경화막, 적층체, 촬상 장치, 반도체 장치, 적층체의 제조 방법 및 접합 전극을 갖는 소자의 제조 방법
DE112023001636T5 (de) * 2022-03-30 2025-04-03 Sony Semiconductor Solutions Corporation Halbleitervorrichtung und verfahren zum produzieren einer halbleitervorrichtung
WO2024202901A1 (ja) * 2023-03-30 2024-10-03 富士フイルム株式会社 接合体の製造方法、処理液および処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7049701B2 (en) * 2003-10-15 2006-05-23 Kabushiki Kaisha Toshiba Semiconductor device using insulating film of low dielectric constant as interlayer insulating film
JP2005142553A (ja) * 2003-10-15 2005-06-02 Toshiba Corp 半導体装置
JP5407660B2 (ja) * 2009-08-26 2014-02-05 ソニー株式会社 半導体装置の製造方法
JP2011146563A (ja) * 2010-01-15 2011-07-28 Panasonic Corp 半導体装置

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