JP2013038112A5 - - Google Patents

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Publication number
JP2013038112A5
JP2013038112A5 JP2011170666A JP2011170666A JP2013038112A5 JP 2013038112 A5 JP2013038112 A5 JP 2013038112A5 JP 2011170666 A JP2011170666 A JP 2011170666A JP 2011170666 A JP2011170666 A JP 2011170666A JP 2013038112 A5 JP2013038112 A5 JP 2013038112A5
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JP
Japan
Prior art keywords
insulating layer
bonding electrode
semiconductor device
layer
semiconductor substrate
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Application number
JP2011170666A
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Japanese (ja)
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JP5803398B2 (en
JP2013038112A (en
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Publication date
Application filed filed Critical
Priority claimed from JP2011170666A external-priority patent/JP5803398B2/en
Priority to JP2011170666A priority Critical patent/JP5803398B2/en
Priority to TW101121190A priority patent/TWI495041B/en
Priority to US13/533,526 priority patent/US8896125B2/en
Priority to KR1020120069684A priority patent/KR102030852B1/en
Priority to CN201210233277.XA priority patent/CN102867847B/en
Publication of JP2013038112A publication Critical patent/JP2013038112A/en
Priority to US14/467,852 priority patent/US9111763B2/en
Publication of JP2013038112A5 publication Critical patent/JP2013038112A5/ja
Priority to US14/718,942 priority patent/US9443802B2/en
Application granted granted Critical
Publication of JP5803398B2 publication Critical patent/JP5803398B2/en
Priority to US15/228,860 priority patent/US10038024B2/en
Priority to US15/228,894 priority patent/US9911778B2/en
Priority to US15/992,908 priority patent/US10431621B2/en
Priority to US16/410,877 priority patent/US10985102B2/en
Priority to KR1020190069266A priority patent/KR20190071647A/en
Priority to KR1020200069977A priority patent/KR102298787B1/en
Priority to US17/194,641 priority patent/US11569123B2/en
Priority to KR1020210112763A priority patent/KR102439964B1/en
Priority to KR1020220109225A priority patent/KR20220126271A/en
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Claims (7)

半導体基体と、
前記半導体基体上に形成された絶縁層と、
前記絶縁層の表面に形成された接合電極と、
前記絶縁層表面に形成され、前記絶縁層を介して前記接合電極の周囲を囲む保護層と、を備える
半導体装置。 A semiconductor substrate;
An insulating layer formed on the semiconductor substrate;
A bonding electrode formed on the surface of the insulating layer;
A protective layer formed on a surface of the insulating layer and surrounding the periphery of the bonding electrode via the insulating layer. 前記接合電極が形成されている表面に露出する保護層が、Ｔａ、Ｔｉ、Ｒｕ、ＴａＮ、及び、ＴｉＮから選ばれる少なくとも１種を含んで構成されている請求項１に記載の半導体装置。   The semiconductor device according to claim 1, wherein the protective layer exposed on the surface on which the bonding electrode is formed includes at least one selected from Ta, Ti, Ru, TaN, and TiN. 前記保護層は、Ｔａ、Ｔｉ、Ｒｕ、ＴａＮ、及び、ＴｉＮから選ばれる少なくとも１種を含む前記絶縁層の凹部内面を被覆する被覆層と、前記被覆層上に形成された前記接合電極を構成する材料からなる導体層とから構成されている請求項１又は２に記載の半導体装置。 The protective layer constitutes a coating layer that covers a concave inner surface of the insulating layer containing at least one selected from Ta, Ti, Ru, TaN, and TiN, and the bonding electrode formed on the coating layer The semiconductor device according to claim 1, comprising a conductor layer made of a material to be processed. 前記保護層が１つの前記接合電極、又は、複数の前記接合電極の周囲を囲む請求項１から３のいずれかに記載の半導体装置。 The semiconductor device according to claim 1, wherein the protective layer surrounds one junction electrode or a plurality of the junction electrodes. 前記接合電極及び前記保護層が形成される絶縁層が、ＳｉＮからなる請求項１から４のいずれかに記載の半導体装置。 The semiconductor device according to claim 1 , wherein the insulating layer on which the bonding electrode and the protective layer are formed is made of SiN. 半導体基体上に絶縁層を形成する工程と、
前記絶縁層の表面に接合電極を形成する工程と、
前記絶縁層の表面に、前記絶縁層を介して前記接合電極の周囲を囲む位置に保護層を形成する工程と、を有する
半導体装置の製造方法。 Forming an insulating layer on the semiconductor substrate;
Forming a bonding electrode on the surface of the insulating layer;
Forming a protective layer on the surface of the insulating layer at a position surrounding the periphery of the bonding electrode via the insulating layer. A method for manufacturing a semiconductor device. 半導体基体、前記半導体基体上に形成された絶縁層、前記絶縁層の表面に形成された接合電極、及び、前記絶縁層表面に形成され、前記絶縁層を介して前記接合電極の周囲を囲む保護層からなる半導体装置と、
前記半導体装置の出力信号を処理する信号処理回路と、を備える
電子機器。 Semiconductor substrate, insulating layer formed on the semiconductor substrate, bonding electrode formed on the surface of the insulating layer, and protection formed on the surface of the insulating layer and surrounding the bonding electrode through the insulating layer A semiconductor device comprising layers;
An electronic device comprising: a signal processing circuit that processes an output signal of the semiconductor device.
JP2011170666A 2011-07-05 2011-08-04 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE Active JP5803398B2 (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
JP2011170666A JP5803398B2 (en) 2011-08-04 2011-08-04 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE
TW101121190A TWI495041B (en) 2011-07-05 2012-06-13 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US13/533,526 US8896125B2 (en) 2011-07-05 2012-06-26 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020120069684A KR102030852B1 (en) 2011-07-05 2012-06-28 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
CN201210233277.XA CN102867847B (en) 2011-07-05 2012-07-05 Semiconductor device, method, semi-conductor device manufacturing method and electronic installation
US14/467,852 US9111763B2 (en) 2011-07-05 2014-08-25 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US14/718,942 US9443802B2 (en) 2011-07-05 2015-05-21 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,860 US10038024B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/228,894 US9911778B2 (en) 2011-07-05 2016-08-04 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US15/992,908 US10431621B2 (en) 2011-07-05 2018-05-30 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US16/410,877 US10985102B2 (en) 2011-07-05 2019-05-13 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020190069266A KR20190071647A (en) 2011-07-05 2019-06-12 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020200069977A KR102298787B1 (en) 2011-07-05 2020-06-10 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
US17/194,641 US11569123B2 (en) 2011-07-05 2021-03-08 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020210112763A KR102439964B1 (en) 2011-07-05 2021-08-26 Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
KR1020220109225A KR20220126271A (en) 2011-07-05 2022-08-30 Semiconductor device, fabrication method for a semiconductor device and electronic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011170666A JP5803398B2 (en) 2011-08-04 2011-08-04 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE

Publications (3)

Publication Number Publication Date
JP2013038112A JP2013038112A (en) 2013-02-21
JP2013038112A5 true JP2013038112A5 (en) 2014-09-18
JP5803398B2 JP5803398B2 (en) 2015-11-04

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JP2011170666A Active JP5803398B2 (en) 2011-07-05 2011-08-04 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102161793B1 (en) 2014-07-18 2020-10-06 삼성전자주식회사 Semiconductor devices and methods of manufacturing the same
KR102267168B1 (en) 2014-12-02 2021-06-21 삼성전자주식회사 Method of manufacturing a semiconductor device
JP2016181531A (en) * 2015-03-23 2016-10-13 ソニー株式会社 Semiconductor device, semiconductor device manufacturing method, solid state image pickup element, image pickup device and electronic apparatus
WO2016185883A1 (en) * 2015-05-18 2016-11-24 ソニー株式会社 Semiconductor device and imaging device
JP6711614B2 (en) * 2015-12-24 2020-06-17 キヤノン株式会社 Semiconductor device
JP6856983B2 (en) * 2016-06-30 2021-04-14 キヤノン株式会社 Photoelectric converter and camera
CN112640112A (en) * 2018-10-15 2021-04-09 索尼半导体解决方案公司 Solid-state imaging device and electronic apparatus
JP7321724B2 (en) * 2019-03-05 2023-08-07 キヤノン株式会社 Semiconductor equipment and equipment
JP2020191334A (en) * 2019-05-20 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and electronic device
WO2021261403A1 (en) * 2020-06-22 2021-12-30 積水化学工業株式会社 Laminate, curable resin composition, method for manufacturing laminate, method for manufacturing substrate having junction electrode, semiconductor device, and image capturing device
JP2022082187A (en) * 2020-11-20 2022-06-01 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device and method for manufacturing the same, and electronic instrument
WO2023120627A1 (en) * 2021-12-23 2023-06-29 積水化学工業株式会社 Curable resin composition, cured film, laminate, imaging device, semiconductor device, method for manufacturing laminate, and method for manufacturing element having contact electrode
WO2023188831A1 (en) * 2022-03-30 2023-10-05 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device and method for producing semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142553A (en) * 2003-10-15 2005-06-02 Toshiba Corp Semiconductor device
US7049701B2 (en) * 2003-10-15 2006-05-23 Kabushiki Kaisha Toshiba Semiconductor device using insulating film of low dielectric constant as interlayer insulating film
JP5407660B2 (en) * 2009-08-26 2014-02-05 ソニー株式会社 Manufacturing method of semiconductor device
JP2011146563A (en) * 2010-01-15 2011-07-28 Panasonic Corp Semiconductor device

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