JP2016518739A5 - - Google Patents
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- JP2016518739A5 JP2016518739A5 JP2016501996A JP2016501996A JP2016518739A5 JP 2016518739 A5 JP2016518739 A5 JP 2016518739A5 JP 2016501996 A JP2016501996 A JP 2016501996A JP 2016501996 A JP2016501996 A JP 2016501996A JP 2016518739 A5 JP2016518739 A5 JP 2016518739A5
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361794744P | 2013-03-15 | 2013-03-15 | |
| US61/794,744 | 2013-03-15 | ||
| PCT/US2014/025924 WO2014151525A2 (en) | 2013-03-15 | 2014-03-13 | Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017203056A Division JP6553695B2 (ja) | 2013-03-15 | 2017-10-20 | 相補型金属酸化膜半導体（ｃｍｏｓ）超音波振動子およびその形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016518739A JP2016518739A (ja) | 2016-06-23 |
| JP2016518739A5 true JP2016518739A5 (enExample) | 2017-04-20 |
| JP6232124B2 JP6232124B2 (ja) | 2017-11-15 |
Family
ID=50549454
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016501996A Active JP6232124B2 (ja) | 2013-03-15 | 2014-03-13 | 相補型金属酸化膜半導体（ｃｍｏｓ）超音波振動子およびその形成方法 |
| JP2017203056A Active JP6553695B2 (ja) | 2013-03-15 | 2017-10-20 | 相補型金属酸化膜半導体（ｃｍｏｓ）超音波振動子およびその形成方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017203056A Active JP6553695B2 (ja) | 2013-03-15 | 2017-10-20 | 相補型金属酸化膜半導体（ｃｍｏｓ）超音波振動子およびその形成方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (8) | US9242275B2 (enExample) |
| EP (3) | EP2969914B1 (enExample) |
| JP (2) | JP6232124B2 (enExample) |
| KR (1) | KR102170559B1 (enExample) |
| CN (1) | CN105307975B (enExample) |
| AU (2) | AU2014234071B2 (enExample) |
| CA (1) | CA2905040C (enExample) |
| TW (2) | TWI663706B (enExample) |
| WO (1) | WO2014151525A2 (enExample) |
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