JP2016518739A5 - - Google Patents

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JP2016518739A5
JP2016518739A5 JP2016501996A JP2016501996A JP2016518739A5 JP 2016518739 A5 JP2016518739 A5 JP 2016518739A5 JP 2016501996 A JP2016501996 A JP 2016501996A JP 2016501996 A JP2016501996 A JP 2016501996A JP 2016518739 A5 JP2016518739 A5 JP 2016518739A5
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JP2016501996A 2013-03-15 2014-03-13 相補型金属酸化膜半導体(cmos)超音波振動子およびその形成方法 Active JP6232124B2 (ja)

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US201361794744P 2013-03-15 2013-03-15
US61/794,744 2013-03-15
PCT/US2014/025924 WO2014151525A2 (en) 2013-03-15 2014-03-13 Complementary metal oxide semiconductor (cmos) ultrasonic transducers and methods for forming the same

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JP2016518739A JP2016518739A (ja) 2016-06-23
JP2016518739A5 true JP2016518739A5 (enExample) 2017-04-20
JP6232124B2 JP6232124B2 (ja) 2017-11-15

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JP2017203056A Active JP6553695B2 (ja) 2013-03-15 2017-10-20 相補型金属酸化膜半導体(cmos)超音波振動子およびその形成方法

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US (8) US9242275B2 (enExample)
EP (3) EP4122609B1 (enExample)
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KR (1) KR102170559B1 (enExample)
CN (1) CN105307975B (enExample)
AU (2) AU2014234071B2 (enExample)
CA (1) CA2905040C (enExample)
TW (2) TWI623081B (enExample)
WO (1) WO2014151525A2 (enExample)

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