JP6335099B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6335099B2 JP6335099B2 JP2014224602A JP2014224602A JP6335099B2 JP 6335099 B2 JP6335099 B2 JP 6335099B2 JP 2014224602 A JP2014224602 A JP 2014224602A JP 2014224602 A JP2014224602 A JP 2014224602A JP 6335099 B2 JP6335099 B2 JP 6335099B2
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- 238000004519 manufacturing process Methods 0.000 title description 14
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Description
Claims (6)
- 半導体酸化膜よりも金属に対する接着性が低い膜と、
前記膜を介して貼合される一対の基板と、
前記一対の基板の対向する位置に設けられ、少なくとも前記一対の基板のうちの第1の基板および前記膜に埋設された第1部位と、前記一対の基板のうちの第2の基板に埋設された第2部位と、前記第2の基板に埋設され、前記基板の面方向における幅が前記第1部位および前記第2部位よりも細く、かつ前記第1部位および前記第2部位を接続する第3部位を有し、前記第3部位の前記面方向における端部の少なくとも一部が前記第2の基板に接する金属電極と、
前記第2部位と前記膜との間に設けられる空隙と
を備えることを特徴とする半導体装置。 - 前記膜と前記第2の基板との間に設けられ、半導体酸化膜よりも金属に対する接着性が低い第2膜と、
前記第1部位と前記第2膜との間に設けられる空隙と
を備え、
前記第2部位は、前記第2膜に埋設される
ことを特徴とする請求項1に記載の半導体装置。 - 前記金属電極は、
前記第1部位の前記面方向における幅と、前記第2部位の前記面方向における幅とが等しい
ことを特徴とする請求項1または請求項2に記載の半導体装置。 - 前記膜は、
半導体窒化膜、炭素を含有する半導体酸化膜、またはLow−k材料のいずれかを含む膜である
ことを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。 - 貼合する一対の基板の表面のうち、少なくとも一方の前記基板の表面に、半導体酸化膜よりも金属に対する接着性が低い膜を形成する工程と、
前記一対の基板の対応する位置に開口を形成する工程と、
前記開口へ金属を埋め込んで金属電極を形成する工程と、
前記一対の基板のうち、前記膜が形成された第1の基板に貼合する第2の基板に形成した前記金属電極の表面を貼合面から後退させる工程と、
前記一対の基板を前記膜を介して貼合する工程と、
貼合した前記一対の基板を熱処理する工程と、
前記熱処理後に常温に戻して前記金属電極を収縮させることにより、前記第2の基板に埋設された部位の周面のうち、前記第1の基板と対向する部位と前記膜との間に空隙を形成する工程と
を含むことを特徴とする半導体装置の製造方法。 - 第1導電部および第1絶縁部を有する第1の基板と、
前記第1導電部と接する第2導電部および前記第1絶縁部と接する第2絶縁部を有する第2の基板と、
前記第1の基板および第2基板の面方向と垂直な第1方向において前記第1導電部および前記第2絶縁部の間に位置する第1空隙と、
前記第1方向において前記第2導電部および前記第1絶縁部の間に位置する第2空隙と
を有することを特徴とする半導体装置。
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JP2014224602A JP6335099B2 (ja) | 2014-11-04 | 2014-11-04 | 半導体装置および半導体装置の製造方法 |
KR1020150147331A KR20160052330A (ko) | 2014-11-04 | 2015-10-22 | 반도체 장치 및 반도체 장치의 제조 방법 |
US14/928,144 US9679867B2 (en) | 2014-11-04 | 2015-10-30 | Semiconductor device having a low-adhesive bond substrate pair |
TW104136199A TWI603454B (zh) | 2014-11-04 | 2015-11-03 | 半導體裝置及半導體裝置之製造方法 |
CN201510740559.2A CN105575890B (zh) | 2014-11-04 | 2015-11-04 | 半导体装置及半导体装置的制造方法 |
US15/588,149 US10090351B2 (en) | 2014-11-04 | 2017-05-05 | Semiconductor device having gaps within the conductive parts |
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KR20160052330A (ko) | 2016-05-12 |
JP2016092197A (ja) | 2016-05-23 |
TWI603454B (zh) | 2017-10-21 |
CN105575890A (zh) | 2016-05-11 |
CN105575890B (zh) | 2020-02-21 |
US9679867B2 (en) | 2017-06-13 |
US20170243910A1 (en) | 2017-08-24 |
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