WO2013168707A1 - 放熱基板及びその製造方法 - Google Patents
放熱基板及びその製造方法 Download PDFInfo
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- WO2013168707A1 WO2013168707A1 PCT/JP2013/062840 JP2013062840W WO2013168707A1 WO 2013168707 A1 WO2013168707 A1 WO 2013168707A1 JP 2013062840 W JP2013062840 W JP 2013062840W WO 2013168707 A1 WO2013168707 A1 WO 2013168707A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000010410 layer Substances 0.000 claims abstract description 202
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000002131 composite material Substances 0.000 claims abstract description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 239000002344 surface layer Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- 239000010703 silicon Substances 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 25
- 238000005468 ion implantation Methods 0.000 claims description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 21
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 20
- 229910003460 diamond Inorganic materials 0.000 claims description 17
- 239000010432 diamond Substances 0.000 claims description 17
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 16
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000000678 plasma activation Methods 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 238000009832 plasma treatment Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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Definitions
- the present invention relates to a heat dissipation substrate made of a silicon composite substrate having high heat dissipation and a method for manufacturing the same.
- SOI wafers and the like used for high-performance processors have a structure in which an insulating layer is interposed directly under a device active layer.
- This insulating layer (SiO 2 ) is also a substance having extremely poor thermal conductivity. Therefore, it is a difficult material to handle from the viewpoint of heat dissipation. From the viewpoint of heat dissipation, it can be said that it is desirable to dispose a material with excellent heat dissipation directly under the device active layer.
- the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a heat dissipation substrate that provides high heat dissipation and a method for manufacturing the same.
- the present inventors have found that the following two-layer or three-layer structure substrates have high heat dissipation, and have made the present invention.
- this invention provides the following thermal radiation board
- a composite substrate comprising two layers, wherein the surface layer (first layer) is made of single crystal silicon and the handle substrate (second layer) is made of a material having higher thermal conductivity than the first layer.
- a composite substrate consisting of three layers, the surface layer (first layer) being made of single crystal silicon, the handle substrate (second layer) being made of a material having higher thermal conductivity than the first layer, and an intermediate A heat dissipation board characterized in that the layer (third layer) is made of a material equivalent to the thermal conductivity of the second layer or a material having a higher thermal conductivity.
- a silicon layer made of single crystal silicon and a handle substrate made of a material having higher thermal conductivity than the silicon layer is thinned to form a first layer
- a heat dissipation substrate which is a heat dissipation substrate made of a two-layer composite material of a silicon layer and a second layer (handle substrate).
- the first layer (silicon layer) and third layer that become the surface layer after thinning the silicon layer are pasted together to form a laminated structure of a silicon layer, an intermediate layer, and a handle substrate.
- a method of manufacturing a heat dissipation board which is a heat dissipation board made of a composite material of three layers (an intermediate layer) and a second layer (handle substrate).
- the heat dissipation board according to the present invention provides high heat dissipation.
- FIG. 6 shows another method for manufacturing a composite substrate having a two-layer structure, in which (a) is a state in which each layer is prepared, (b) is a state in which the layers are bonded, and (c) is a cross-sectional view in a state in which the first layer is thinned It is.
- FIGS. 4A and 4B show another method for manufacturing a composite substrate having a three-layer structure, in which FIG. 4A is a sectional view of each layer prepared, FIG. 2B is a bonded state, and FIG. 4C is a thinned first layer. It is. It is the graph which showed the heat conductivity of the Example of this invention. It is the graph which showed the heat conductivity of the comparative example of this invention.
- the heat dissipation substrate of the present invention has a two-layer structure (FIG. 1) or a three-layer structure (FIG. 2) with single crystal silicon as a surface layer (first layer).
- the layer (second layer) 2 below the silicon (first layer) 1 has a higher thermal conductivity than silicon.
- the thermal conductivity of the third layer 3 under the silicon (first layer) 1 is higher than that of the first layer 1, and the thermal conductivity of the third layer 3 Is higher than the second layer 2 or has substantially the same value.
- the thermal conductivity of the second layer 2 is higher than that of the first layer 1. The reason why the heat conduction of the second layer is the highest is that the heat generated in the first layer is assumed to be generated in the vicinity of the transistor. That is.
- Materials suitable for semiconductor applications include diamond, aluminum nitride, and silicon carbide.
- the thermal conductivities of silicon, diamond, aluminum nitride, silicon carbide, and SiO 2 are as follows, and the measurement method is a value obtained by a laser flash method described later.
- Silicon carbide 2.0 to 3.8 W / cm ⁇ K SiO 2 : 0.015 W / cm ⁇ K
- SiO 2 has extremely poor thermal conductivity and is not suitable for use as a heat dissipation substrate.
- the laminated structure As described above, there is a method in which a substrate to be a donor substrate (silicon wafer) is bonded to a handle substrate. In the case where the structure is a three-layer substrate, there is a method in which a material serving as a third layer is formed on the donor, the handle, or both, and the two substrates are bonded together.
- a silicon substrate thinned to a desired thickness can be used.
- a silicon wafer is thinned by grinding or polishing, or ion implantation is performed on the silicon wafer before bonding, and peeling is performed after bonding.
- a method of performing ion implantation separation method, for example, ion implantation mechanical separation method such as SiGen method).
- FIG. 3 shows an example of a method for producing a two-layer structure.
- a first layer (Si) 1 and a second layer 2 are prepared (a), bonded together (b), and then ground and polished.
- the first layer 1 is thinned to a desired thickness (c).
- FIG. 4 shows another manufacturing method of a two-layer structure.
- an ion implantation region 1 ion is formed from one surface of the first layer (Si) 1 (a), and the ion implantation region 1 ion side of the first layer 1 is
- the composite substrate in which the second layer 2 is bonded (b) and then peeled off in the ion implantation region 1 ion of the first layer 1 and the thinned first layer (silicon layer) 1a is laminated with the second layer 2 is formed.
- the method for forming the ion implantation region 1 ion is not particularly limited.
- the ion implantation region 1 ion can be formed at a desired depth from the surface of the first layer 1 with a predetermined dose of hydrogen ions or ions. Rare gas ions are implanted.
- the depth from the surface of the ion-implanted first layer 1 to the ion-implanted region 1 ion corresponds to the desired thickness of the thinned first layer.
- the thickness of the ion implantation region 1 ion (that is, the ion distribution thickness) should be such that it can be easily peeled off by mechanical impact or the like.
- FIG. 5 shows an example of a method for producing a three-layer structure.
- a first layer (Si) 1, a second layer 2, and a third layer 3 are prepared (a), these are bonded (b), and then the first layer One layer (Si) 1 is thinned to a desired thickness by grinding and polishing (c).
- the third layer 3 may be formed on the second layer 2 and this may be bonded to the first layer 1 (i), and the third layer 3 is formed on the first layer 1 May be bonded to the second layer 2 (ii), or a film obtained by forming the third layer 3 on the first layer 1 and the second layer 2 may be bonded (iii).
- FIG. 6 shows another manufacturing method of a three-layer structure.
- an ion implantation region 1 ion is formed from the bonding surface side of the first layer (Si) 1 (a), and the ion implantation region 1 of the first layer 1 is formed.
- the ion side, the third layer 3 and the second layer 2 are bonded together (b), and then peeled off in the ion implantation region 1 ion of the first layer 1 (c).
- the third layer 3 formed on the second layer 2 may be bonded to the ion implantation region 1 ion side of the first layer 1 (i).
- a film in which the third layer 3 is formed on the surface on the 1 ion side may be bonded to the second layer 2 (ii), and the surface on the ion implantation region 1 ion side of the first layer 1 and the surface on the second layer 2
- the third layer 3 may be formed on each of them, and these may be bonded together (iii).
- the ion implantation region 1 ion formation method, ion implantation depth, and ion distribution thickness are the same as those in FIG.
- the thickness of the single crystal silicon of the first layer is preferably 1 to 20 ⁇ m, particularly preferably 1 to 10 ⁇ m.
- the thickness of the second layer is 1 to 800 ⁇ m, particularly 100 to 750 ⁇ m, and the thickness of the third layer is preferably 1 to 30 ⁇ m.
- the present invention is not particularly limited to the above production method.
- any known surface activation ozone water treatment, UV ozone treatment, ion beam treatment, plasma treatment, etc.
- any known surface activation ozone water treatment, UV ozone treatment, ion beam treatment, plasma treatment, etc.
- the thermal conductivity of the following composite material was measured.
- the measuring method is a laser flash method (conforming to JIS R 1611-1997). This was obtained by uniformly irradiating the single crystal silicon on the front surface with a pulse laser and heating it instantaneously, and observing the temperature change on the back surface. In the case of a composite substrate, the value is approximated when the entire substrate is made of a uniform material.
- Si / SiC Si layer is 1.0 ⁇ m thick, SiC substrate is 625 ⁇ m thick
- Si / SiC / AlN Si layer is 1 ⁇ m thick
- SiC layer is 1.0 ⁇ m thick
- AlN substrate is 625 ⁇ m thick
- Si / diamond / SiC Si layer is 1 ⁇ m thick
- diamond layer is 1.0 ⁇ m thick
- SiC substrate is 625 ⁇ m thick
- Si / diamond / AlN Si layer is 1 ⁇ m thick
- Si / diamond / AlN Si layer is 1 ⁇ m thick
- a method for manufacturing the composite material is as follows. Si / SiC was produced by the method shown in FIG.
- Si / SiC / AlN was produced by the method shown in FIG. Si / diamond / SiC and Si / diamond / AlN were produced by the method shown in FIG. 6 (i), respectively.
- plasma activation treatment for increasing the bonding strength was performed on the surfaces of both substrates before bonding.
- FIG. Values are as follows: ⁇ Si / SiC: 1.85 W / cm ⁇ K Si / SiC / AlN: 1.75 W / cm ⁇ K ⁇ Si / Diamond / SiC: 2.2 W / cm ⁇ K Si / Diamond / AlN: 1.78 W / cm ⁇ K In all cases, it was confirmed that the heat dissipation was higher than that of silicon alone.
- the thermal conductivity of the following materials was measured.
- the measurement method is the same laser flash method as described above. This was obtained by uniformly irradiating the front surface with a pulse laser and heating it instantaneously and observing the temperature change on the back surface.
- SOI composite substrate
- the SOI wafer is a handle wafer which is a single crystal silicon wafer having a silicon oxide film formed on the surface and a silicon substrate having an ion implantation region formed thereon. After bonding a certain donor wafer with a silicon oxide film, the donor wafer was mechanically peeled off in the ion implantation region, and the silicon thin film was transferred to the handle wafer side.
- Aluminum nitride produced by CVD method: thickness 625 ⁇ m
- Silicon carbide manufactured by CVD method: thickness 625 ⁇ m
Abstract
Description
しかし、実際にシリコンを薄化しても、デバイスが作られる領域(デバイス活性層)は表面から精々数μmであり、これ以外の領域は「熱溜まり」として作用するので、放熱という観点からは効率が悪いと言わざるを得ない。また近年、高性能プロセッサーなどに用いられるSOIウェーハなどはデバイス活性層の直下に絶縁層を介した構造を有しているが、この絶縁層(SiO2)は熱伝導性が極めて悪い物質でもあるので、放熱という観点からは扱いにくい材料である。
放熱という観点からは、デバイス活性層の直下に放熱性に優れた材料を配置することが望ましいと言える。
〔1〕 2層よりなる複合基板であり、表層(第一層)が単結晶シリコン、ハンドル基板(第二層)が第一層よりも熱伝導率の高い材料で構成されていることを特徴とする放熱基板。
〔2〕 第二層の材料が、窒化アルミニウム、炭化ケイ素、ダイヤモンドのいずれかで構成されていることを特徴とする〔1〕記載の放熱基板。
〔3〕 3層よりなる複合基板であり、表層(第一層)が単結晶シリコン、ハンドル基板(第二層)が第一層よりも熱伝導率の高い材料で構成されており、且つ中間層(第三層)が第二層の熱伝導率と同等の材料又はこれより熱伝導率の高い材料で構成されていることを特徴とする放熱基板。
〔4〕 第二層、第三層の材料が、窒化アルミニウム、炭化ケイ素、ダイヤモンドの中から選択されることを特徴とする〔3〕記載の放熱基板。
〔5〕 第一層(シリコン層)と第二層とを貼り合せ、第一層(シリコン層)を薄化してなることを特徴とする〔1〕記載の放熱基板。
〔6〕 第一層(シリコン層)、中間層(第三層)及び第二層を貼り合せ、第一層(シリコン層)を薄化してなることを特徴とする〔3〕記載の放熱基板。
〔7〕 単結晶シリコンからなるシリコン層と、シリコン層よりも熱伝導率の高い材料で構成されているハンドル基板とを貼り合せた後、シリコン層を薄化して、表層となる第一層(シリコン層)と第二層(ハンドル基板)の2層の複合材料よりなる放熱基板とする放熱基板の製造方法。
〔8〕 単結晶シリコンからなるシリコン層と、シリコン層よりも熱伝導率の高い材料で構成されているハンドル基板と、ハンドル基板の熱伝導率と同等の材料又はこれより熱伝導率の高い材料で構成されている中間層とをシリコン層、中間層、ハンドル基板の積層構造となるように貼り合せた後、シリコン層を薄化して、表層となる第一層(シリコン層)、第三層(中間層)及び第二層(ハンドル基板)の3層の複合材料よりなる放熱基板とする放熱基板の製造方法。
〔9〕 研削、研磨によりシリコン層を薄化することを特徴とする〔7〕又は〔8〕記載の放熱基板の製造方法。
〔10〕 イオン注入剥離法によりシリコン層を薄化することを特徴とする〔7〕又は〔8〕記載の放熱基板の製造方法。
〔11〕 上記貼り合せ前処理として、プラズマ活性化、イオンビーム処理又はオゾン処理を施すことを特徴とする〔7〕~〔10〕のいずれかに記載の放熱基板の製造方法。
ここで、構造が2層で構成される場合は、シリコン(第一層)1の下の層(第二層)2にシリコンよりも高い熱伝導率のものを配置することである。
構造が3層で構成される場合は、シリコン(第一層)1の下の第三層3の熱伝導率が第一層1よりも高いこと、また、この第三層3の熱伝導率が第二層2よりも高いこと、もしくはほぼ同じ値を有することである。更に、第二層2の熱伝導度が第一層1よりも高いことである。第二層の熱伝導が最も高い理由は、第一層で生じる熱はトランジスター付近で発生することが想定されるので、この熱をチップ面内に均等に伝えることで擬似的に放熱作用を促すことである。
Si:1.5W/cm・K
ダイヤモンド:10~20W/cm・K
窒化アルミニウム:1.5~2.0W/cm・K
炭化ケイ素:2.0~3.8W/cm・K
SiO2:0.015W/cm・K
上記のような積層構造を作る方法はいくつかある。構造が2層構造の場合は、ドナー基板(シリコンウェーハ)となる基板をハンドル基板と貼り合せることによって作製する方法がある。構造が3層基板の場合は、ドナーもしくはハンドル、もしくは双方に第三層となる材料を成膜し、両基板を貼り合せるという方法などである。
この場合、第二層2の上に第三層3を成膜し、これと第一層1とを貼り合せてもよく(i)、第一層1に第三層3を成膜したものを第二層2と貼り合せてもよく(ii)、第一層1、第二層2の上にそれぞれ第三層3を成膜したものを貼り合せてもよい(iii)。
実施例として、下記の複合材料の熱伝導率を測定した。測定方法は、レーザーフラッシュ法(JIS R 1611-1997に準拠)である。これは表面の単結晶シリコンにパルスレーザを均一照射して瞬間加熱し、裏面の温度変化を観察することで得られた。複合基板の場合は、基板全体が均一な材料でできていると近似した場合の値である。
・ Si/SiC(Si層は厚さ1.0μm、SiC基板は厚さ625μm)
・ Si/SiC/AlN(Si層は厚さ1μm、SiC層は厚さ1.0μm、AlN基板は厚さ625μm)
・ Si/ダイヤモンド/SiC(Si層は厚さ1μm、ダイヤモンド層は厚さ1.0μm、SiC基板は厚さ625μm)
・ Si/ダイヤモンド/AlN(Si層は厚さ1μm、ダイヤモンド層は厚さ1.0μm、AlN基板は厚さ625μm)
なお、上記複合材料の作製方法は次の通りである。
・Si/SiCについては、上述の図3の方法で作製した。
・Si/SiC/AlNについては、上述の図4の方法で作製した。
・Si/ダイヤモンド/SiC及びSi/ダイヤモンド/AlNについては、それぞれ上述の図6(i)の方法により作製した。
なお、上記のいずれの場合も貼り合せ前に両基板の表面について接合強度を高めるプラズマ活性化処理を施した。
結果を図7に示す。値は下記の通りである。
・ Si/SiC:1.85W/cm・K
・ Si/SiC/AlN:1.75W/cm・K
・ Si/ダイヤモンド/SiC:2.2W/cm・K
・ Si/ダイヤモンド/AlN:1.78W/cm・K
全ての場合で、シリコン単体よりも高い放熱性を有することが確認できた。
比較例として、下記の材料の熱伝導率を測定した。測定方法は、上記と同じレーザーフラッシュ法である。これは表面にパルスレーザを均一照射して瞬間加熱し、裏面の温度変化を観察することで得られた。複合基板(SOI)の場合は、基板全体が均一な材料でできていると近似した場合の値である。
・ シリコン(厚さ625μm)
・ SOIウェーハ(SOI層1μm、Box層0.5μm、ハンドルウェーハ625μm)該SOIウェーハは、表面にシリコン酸化膜を形成した単結晶シリコンウェーハであるハンドルウェーハと、イオン注入領域を形成したシリコン基板であるドナーウェーハとをシリコン酸化膜を介して貼り合せた後、イオン注入領域でドナーウェーハを機械剥離させてハンドルウェーハ側にシリコン薄膜を転写して得たものである。
・ 窒化アルミニウム(CVD法により作製:厚さ625μm)
・ 炭化ケイ素(CVD法により作製:厚さ625μm)
結果を図8に示す。値は下記の通りである。
・ シリコン(Si):1.5W/cm・K
・ SOIウェーハ:0.6W/cm・K
・ 窒化アルミニウム(AlN):1.8W/cm・K
・ 炭化ケイ素(SiC):2.3W/cm・K
ダイヤモンドに関しては、バルク基板の入手が難しいため、推定値を下記に記す。
・ダイヤモンド:11W/cm・K
1a 薄化した第一層(シリコン層)
1ion イオン注入領域
2 第二層
3 第三層
Claims (11)
- 2層よりなる複合基板であり、表層(第一層)が単結晶シリコン、ハンドル基板(第二層)が第一層よりも熱伝導率の高い材料で構成されていることを特徴とする放熱基板。
- 第二層の材料が、窒化アルミニウム、炭化ケイ素、ダイヤモンドのいずれかで構成されていることを特徴とする請求項1記載の放熱基板。
- 3層よりなる複合基板であり、表層(第一層)が単結晶シリコン、ハンドル基板(第二層)が第一層よりも熱伝導率の高い材料で構成されており、且つ中間層(第三層)が第二層の熱伝導率と同等の材料又はこれより熱伝導率の高い材料で構成されていることを特徴とする放熱基板。
- 第二層、第三層の材料が、窒化アルミニウム、炭化ケイ素、ダイヤモンドの中から選択されることを特徴とする請求項3記載の放熱基板。
- 第一層(シリコン層)と第二層とを貼り合せ、第一層(シリコン層)を薄化してなることを特徴とする請求項1記載の放熱基板。
- 第一層(シリコン層)、中間層(第三層)及び第二層を貼り合せ、第一層(シリコン層)を薄化してなることを特徴とする請求項3記載の放熱基板。
- 単結晶シリコンからなるシリコン層と、シリコン層よりも熱伝導率の高い材料で構成されているハンドル基板とを貼り合せた後、シリコン層を薄化して、表層となる第一層(シリコン層)と第二層(ハンドル基板)の2層の複合材料よりなる放熱基板とする放熱基板の製造方法。
- 単結晶シリコンからなるシリコン層と、シリコン層よりも熱伝導率の高い材料で構成されているハンドル基板と、ハンドル基板の熱伝導率と同等の材料又はこれより熱伝導率の高い材料で構成されている中間層とをシリコン層、中間層、ハンドル基板の積層構造となるように貼り合せた後、シリコン層を薄化して、表層となる第一層(シリコン層)、第三層(中間層)及び第二層(ハンドル基板)の3層の複合材料よりなる放熱基板とする放熱基板の製造方法。
- 研削、研磨によりシリコン層を薄化することを特徴とする請求項7又は8記載の放熱基板の製造方法。
- イオン注入剥離法によりシリコン層を薄化することを特徴とする請求項7又は8記載の放熱基板の製造方法。
- 上記貼り合せ前処理として、プラズマ活性化、イオンビーム処理又はオゾン処理を施すことを特徴とする請求項7~10のいずれか1項記載の放熱基板の製造方法。
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