TWI643296B - 散熱基板及其製造方法 - Google Patents

散熱基板及其製造方法 Download PDF

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TWI643296B
TWI643296B TW102116338A TW102116338A TWI643296B TW I643296 B TWI643296 B TW I643296B TW 102116338 A TW102116338 A TW 102116338A TW 102116338 A TW102116338 A TW 102116338A TW I643296 B TWI643296 B TW I643296B
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layer
substrate
silicon
thermal conductivity
heat dissipation
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TW201409629A (zh
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秋山昌次
久保田芳宏
川合信
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日商信越化學工業股份有限公司
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Abstract

本發明係關於散熱基板，其特徵為：係由2層所構成之複合基板，表層(第一層)(1)為單結晶矽，操作(handle)基板(第二層)(2)由比第一層熱導率高之材料所構成，本發明之散熱基板，會賦予高散熱性。

Description

散熱基板及其製造方法
本發明係關於由具有高散熱性之矽複合基板所構成之散熱基板及其製造方法。
近年來，矽半導體裝置隨著設計原則之微細化，使性能益為提高。但，在其反面，卻有由各個電晶體、及連接電晶體間之金屬配線的散熱之問題。為對應該問題，已出現者有在製作裝置後將矽之背面薄化(一百至數百μm程度)，並在晶片上設置巨大散熱扇，以促進其散熱、以及以水冷卻管循環。
然而，實際之情形是即使矽已薄化，製作裝置之範圍(裝置活性層)由表面起算至多為數μm，其以外的範圍會有「蓄熱」的作用，因此不得不說由散熱之觀點而言效率並不佳。再加上近年來，使用高性能處理器等的SOI晶圓等係具有在裝置活性層之正下方隔著有絕緣層之構造，然而該絕緣層(SiO2)為導熱性極差之物質，因此由散熱之觀點而言為不易操作的材料。
因此由散熱之觀點而言，自不待言期望有配置在裝置 活性層正下方而散熱性優良之材料。
本發明即鑑於上述情形，目的在提供可賦予高散熱性之散熱基板及其製造方法。
本發明人等，為達成上述目的經過努力檢討之結果，發現具有以下之2層或3層構造的基板具有高散熱性，而完成本發明。
亦即，本發明，係提供下述之散熱基板及其製造方法。
〔1〕一種散熱基板，其特徵為：係2層所構成之複合基板，表層(第一層)為單結晶矽，操作基板(第二層)由比第一層熱導率高之材料所構成。
〔2〕如〔1〕項之散熱基板，其中第二層之材料，由氮化鋁、碳化矽、鑽石之任一者所構成。
〔3〕一種散熱基板，其特徵為：係3層所構成之複合基板，表層(第一層)為單結晶矽，操作基板(第二層)由比第一層熱導率高之材料所構成，且中間層(第三層)由與第二層熱導率同等之材料或熱導率比其更高之材料所構成。
〔4〕如〔3〕項之散熱基板，其中第二層、第三層之材 料，係由：氮化鋁、碳化矽、鑽石中選出。
〔5〕如〔1〕項之散熱基板，其中將第一層(矽層)與第二層貼合，並將第一層(矽層)薄化而成。
〔6〕如〔3〕項之散熱基板，其中將第一層(矽層)、中間層(第三層)及第二層貼合，並將第一層(矽層)薄化而成。
〔7〕一種散熱基板的製造方法，其係將單結晶矽所構成之矽層、及由比矽層熱導率高之材料所構成的操作基板貼合後，再將矽層薄化，成為由表層之第一層(矽層)及第二層(操作基板)的2層之複合材料所構成的散熱基板。
〔8〕一種散熱基板的製造方法，其係將單結晶矽所構成之矽層、由比矽層熱導率高之材料所構成的操作基板、及與操作基板熱導率同等之材料或比其熱導率更高之材料所構成的中間層以成為矽層、中間層、操作基板之層合構造的方式貼合後，再將矽層薄化，成為由表層之第一層(矽層)、第三層(中間層)及第二層(操作基板)的3層之複合材料所構成之散熱基板。
〔9〕如〔7〕或〔8〕項之散熱基板的製造方法，其係以磨削、研磨將矽層薄化。
〔10〕如〔7〕或〔8〕項之散熱基板的製造方法，其係以離子植入剝離法(ion implantation exfoliation)將矽層薄化。
〔11〕如〔7〕至〔10〕中之任一項之散熱基板，其中作為上述貼合前處理，係實施電漿活化、離子束處理或臭氧 處理。
本發明之散熱基板，可賦予高散熱性。
1‧‧‧第一層(Si)
1a‧‧‧薄化第一層(矽層)
1ion‧‧‧離子植入區域
2‧‧‧第二層
3‧‧‧第三層
〔第1圖〕所示係本發明的複合基板之一實施例的截面圖。
〔第2圖〕所示係本發明的複合基板之其他實施例的截面圖。
〔第3圖〕所示係2層構造之複合基板的製作方法之一例，(a)為各層在準備之狀態，(b)為在貼合之狀態，(c)為在第一層薄化之狀態的截面圖。
〔第4圖〕所示係2層構造之複合基板的其他製作方法，(a)為各層在準備之狀態，(b)為在貼合之狀態，(c)為在第一層薄化之狀態的截面圖。
〔第5圖〕所示係3層構造之複合基板的製作方法之一例，(a)為各層在準備之狀態，(b)為在貼合之狀態，(c)為在第一層薄化之狀態的截面圖。
〔第6圖〕所示係3層構造之複合基板的其他之製作方法，(a)為各層在準備之狀態，(b)為在貼合之狀態，(c)為在第一層薄化之狀態的截面圖。
〔第7圖〕所示係本發明的實施例之熱導率曲線。
〔第8圖〕所示係本發明的比較例之熱導率曲線。
〔發明之實施形態〕
本發明之散熱基板，為以單結晶矽為表層(第一層)而具有2層構造(第1圖)或3層構造(第2圖)者。
當中，在構造為2層所構成時，配置在矽(第一層)1之下之層(第二層)2係熱導率比矽更高者。
在由3層所構成時，矽(第一層)1之下之第三層3的熱導率比第一層1為高，且，該第三層3之熱導率亦比第二層2為高，或具有大致相同之值者。而且，第二層2之熱導率比第一層1為高。第二層之熱導率為最高之理由，係推想由第一層所產生之熱發生在電晶體附近，因此該熱可均等地傳布至晶片之面內而有類似促進散熱之作用。
在兩方之情形中雖然第二層/第三層有數種材料可候補，但因係使用作為半導體之用途，難以採用金屬材料。適於半導體用途之材料，可舉如：鑽石、氮化鋁、碳化矽。矽、鑽石、氮化鋁、碳化矽、SiO2之熱導率各如下，測定法，係以後述之雷射閃光法所得之值。
Si：1.5W/cm‧K
鑽石：10至20W/cm‧K
氮化鋁：1.5至2.0W/cm‧K
碳化矽：2.0至3.8W/cm‧K
SiO2：0.015W/cm‧K
其中，SiO2之熱導率極差，因此可知在散熱基板之用途上並不適當。
如上述之層合構造的製作方法有數種。在構造為2層構造時，可以使作為施體基板(donor substrate)(矽晶圓)之基板與操作基板貼合之方法製作。在構造為3層基板時，亦有以於施體基板或操作基板、或於雙方使作為第三層之材料成膜，使兩基板貼合之方法等。
在該情形時，可使用將矽基板薄化至期望之厚度者。將作為第一層之矽層薄化至設定的厚度之方法，可舉如：將矽晶圓磨削/研磨薄化的方法及在貼合前在矽晶圓中施以離子植入，再於貼合後進行剝離的方法(離子植入剝離法，可舉如：SiGen法等之離子植入機械剝離法)。
此處，第3圖所示係2層構造製作方法之一例，係先準備第一層(Si)1及第二層2(a)，再將其貼合(b)，其次藉由磨削、研磨使第一層1薄化至期望的厚度(c)。
第4圖所示係2層構造之其他的製作方法，係先由第一層(Si)1之一面形成離子植入區域1ion(a)，再以該第一層1之離子植入區域1ion之側與第二層2貼合(b)，其次於第一層1之離子植入區域1ion剝離，得到薄化之第一層(矽層)1a與第二層2層合的複 合基板(c)。離子植入區域1ion之形成方法，並無特別之限定，例如：由第一層1之表面以可於期望深度形成離子植入區域1ion的能量植入指定劑量之氫離子或惰性氣體(rare gas)離子。植入離子之第一層1由表面至離子植入區域1ion的深度(即，打入離子之深度)，可對應於薄化之第一層所期望的厚度。同時，離子植入區域1ion的厚度(即，離子分布之厚度)，係依照機械衝擊等而以可容易地剝離之厚度為佳。
第5圖所示，係3層構造的製作方法之一例，係先準備第一層(Si)1、第二層2、第三層3(a)，再將其貼合(b)，其次再磨削、研磨第一層(Si)1，藉以薄化至期望的厚度(c)。
在該情形時，亦可在第二層2上使第三層3成膜，再以此與第一層1貼合(i)；可使於第一層1上使第三層3成膜者再與第二層2貼合(ii)；亦可使在第一層1、第二層2上各使第三層3成膜者貼合(iii)。
第6圖所示係3層構造之其他的製作方法，係先由第一層(Si)1之貼合面之側形成離子植入區域1ion(a)，再以第一層1之離子植入區域1ion之側與第三層3、第二層2貼合(b)，其次於第一層1之離子植入區域1ion進行剝離(c)。在該情形時，可使在第二層2上使第三層3成膜者與第一層1之離子植入區域1ion之側貼合(i)；可使在第一層1之離子植入區域1ion之側之面上使第三層3成膜者與第二層2貼合(ii)；亦可在第 一層1之離子植入區域1ion之側之面及第二層2上各使第三層3成膜，再使該等貼合(iii)。在該情形時離子植入區域1ion之形成方法、離子打入深度、離子分布厚度係與第4圖之情形相同。
當中，第一層單結晶矽之厚度為1至20μm，較佳為1至10μm。再者，第二層之厚度為1至800μm，特別以100至750μm為佳；第三層之厚度以1至30μm為佳。
再者，本發明並不特別限定於上述之製作方法。同時，亦可為了在貼合前使結合強度增強，實施任意已知之表面活化(臭氧水處理、UV臭氧處理、離子束處理、電漿處理等)。
〔實施例〕
以下，再以所示之實施例及比較例，具體說明本發明，惟本發明並不受下述實施例之限定。
〔實施例〕
實施例方面，係測定下述複合材料的熱導率。測定之方法，為雷射閃光法(依據JIS R 1611-1997)。其係以脈衝雷射(pulsed laser)均一地照射表面之單結晶矽以瞬間加熱，再觀察背面之溫度變化所得。在複合基板之情形，係近似基板全體為均一材料製成時之值。
‧Si/SiC(Si層厚度為1.0μm，SiC基板厚度為625μm)
‧Si/SiC/AlN(Si層厚度為1μm，SiC基板厚度為1.0μm，AlN基板厚度為625μm)
‧Si/鑽石/SiC(Si層厚度為1μm，鑽石層厚度為1.0μm，SiC基板厚度為625μm)
‧Si/鑽石/AlN(Si層厚度為1μm，鑽石層厚度為1.0μm，AlN基板厚度為625μm)
又，上述複合材料的製作方法如下。
‧Si/SiC方面，係以上述第3圖之方法製作。
‧Si/SiC/AlN方面，係以上述第4圖之方法製作。
‧Si/鑽石/SiC及Si/鑽石/AlN方面，係各以上述第6圖(i)之方法製作。
再者，在上述所有之場合均在貼合前在兩基板之表面實施電漿活化處理以提高接合強度。
其結果如第7圖所示。其值如下述所述。
‧Si/SiC：1.85W/cm‧K
‧Si/SiC/AlN：1.75W/cm‧K
‧Si/鑽石/SiC：2.2W/cm‧K
‧Si/鑽石/AlN：1.78W/cm‧K
在所有之情況，可確定具有比矽單質為高之散熱性。
〔比較例〕
比較例方面，係測定下述材料的熱導率。測定之方法，係與上述相同之雷射閃光法。即以脈衝雷射均一地照射表面以瞬間加熱，再觀察背面之溫度變化所得。在複合 基板(SOI)之情形，係近似基板全體為均一材料製成時之值。
‧矽(厚度625μm)
‧SOI晶圓(SOI層1μm，Box層0.5μm，操作晶圓 625μm)該SOI晶圓，係將在表面形成矽氧化膜的單結晶矽晶圓之操作晶圓、與形成離子植入區域的矽基板之施體基板隔著矽氧化膜貼合後，再於離子植入區域藉由機械剝離施體基板在操作晶圓之側轉印矽薄膜所得。
‧氮化鋁(以CVD法製作：厚度為625μm)
‧碳化矽(以CVD法製作：厚度為625μm)
其結果如第8圖所示。其值如下述所述。
‧矽(Si)：1.5W/cm‧K
‧SOI晶圓：0.6W/cm‧K
‧氮化鋁(AlN)：1.8W/cm‧K
‧碳化矽(SiC)：2.3W/cm‧K
關於鑽石方面，由於難以得到塊體基板(bulk substrate)，下述所述為推定值。
‧鑽石：11W/cm‧K

Claims (6)

  1. 一種散熱基板，其特徵為：係3層所構成之複合基板，表層(第一層)為單結晶矽，操作基板(第二層)由比第一層熱導率高之材料所構成，且中間層(第三層)由與第二層熱導率同等之材料或熱導率比其更高之材料所構成，前述3層當中包含半導體層，該複合基板，係藉由將第一層(矽層)、中間層(第三層)及第二層貼合，並將第一層(矽層)薄化而形成。
  2. 如申請專利範圍第1項之散熱基板，其中第二層、第三層之材料係由氮化鋁、碳化矽、鑽石中選出。
  3. 一種如申請專利範圍第1項之散熱基板的製造方法，其係將單結晶矽所構成之矽層、由比矽層熱導率高之材料所構成的操作基板、及與操作基板熱導率同等之材料或比其熱導率更高之材料所構成的中間層，以成為矽層、中間層、操作基板之層合構造的方式貼合後，再將矽層薄化，成為由表層之第一層(矽層)、第三層(中間層)及第二層(操作基板)的3層之複合材料所構成，且前述3層當中包含半導體層之散熱基板。
  4. 如申請專利範圍第3項之散熱基板的製造方法，其係以磨削、研磨將矽層薄化。
  5. 如申請專利範圍第3項之散熱基板的製造方法，其係以離子植入剝離法將矽層薄化。
  6. 如申請專利範圍第3項之散熱基板的製造方法，其中作為上述貼合前處理，係實施電漿活化、離子束處理或臭氧處理。
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