JP5284576B2 - 半導体基板の製造方法 - Google Patents
半導体基板の製造方法 Download PDFInfo
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- JP5284576B2 JP5284576B2 JP2006305657A JP2006305657A JP5284576B2 JP 5284576 B2 JP5284576 B2 JP 5284576B2 JP 2006305657 A JP2006305657 A JP 2006305657A JP 2006305657 A JP2006305657 A JP 2006305657A JP 5284576 B2 JP5284576 B2 JP 5284576B2
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- 239000000758 substrate Substances 0.000 title claims description 139
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- 239000010703 silicon Substances 0.000 claims description 50
- 238000002844 melting Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 38
- 238000005468 ion implantation Methods 0.000 claims description 31
- 230000008018 melting Effects 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 29
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- -1 hydrogen ions Chemical class 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 3
- 229920002545 silicone oil Polymers 0.000 claims description 3
- 230000003313 weakening effect Effects 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 30
- 239000007789 gas Substances 0.000 description 12
- 206010040844 Skin exfoliation Diseases 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
11 注入ダメージ層
12 イオン注入界面
13 シリコン薄膜
20 低融点ガラス基板
30 プラスチック基板
40 真空チャックステージ
Claims (4)
- 半導体基板の製造方法であって、シリコン基板の主面側に1.5×1017atoms/cm2以上で4×1017atoms/cm2以下のドーズ量で水素イオンを注入する第1のステップと、前記シリコン基板の主面と融点500℃以下の低融点ガラスからなる支持基板の主面を貼り合わせる第2のステップと、前記貼り合わせた基板を120℃以上であって前記支持基板の融点を超えない250℃以下の温度で熱処理して前記水素イオンの注入により形成されたダメージ層内のシリコン原子同士の結合を弱化させる第3のステップと、前記熱処理後の貼り合せ基板の前記シリコン基板の水素イオン注入界面に沿ってシリコン結晶膜を剥離して前記支持基板の表面上にシリコン薄膜を形成する第4のステップとを備え、
前記第2のステップの貼り合わせは、前記シリコン基板の主面及び前記支持基板の主面の少なくとも一方にプラズマ処理又はオゾン処理による表面活性化処理を施して実行され、
前記第4のステップは、前記シリコン基板端部の水素イオン注入領域に機械的衝撃を付与することにより実行される、半導体基板の製造方法。 - 半導体基板の製造方法であって、シリコン基板の主面側に1.5×10 17 atoms/cm 2 以上で4×10 17 atoms/cm 2 以下のドーズ量で水素イオンを注入する第1のステップと、前記シリコン基板の主面と有機材料からなる支持基板の主面を貼り合わせる第2のステップと、前記貼り合わせた基板を120℃以上であって前記支持基板の融点を超えない250℃以下の温度で熱処理して前記水素イオンの注入により形成されたダメージ層内のシリコン原子同士の結合を弱化させる第3のステップと、前記熱処理後の貼り合せ基板の前記シリコン基板の水素イオン注入界面に沿ってシリコン結晶膜を剥離して前記支持基板の表面上にシリコン薄膜を形成する第4のステップとを備え、
前記第2のステップの貼り合わせは、前記シリコン基板の主面と前記支持基板の主面同士を接着剤の塗布により実行され、
前記第4のステップは、前記シリコン基板端部の水素イオン注入領域に機械的衝撃を付与することにより実行される、半導体基板の製造方法。 - 前記支持基板がプラスチックであることを特徴とする請求項2に記載の半導体基板の製造方法。
- 前記接着剤が、シリコーンオイルである請求項2又は3に記載の半導体基板の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006305657A JP5284576B2 (ja) | 2006-11-10 | 2006-11-10 | 半導体基板の製造方法 |
US11/979,446 US20080113489A1 (en) | 2006-11-10 | 2007-11-02 | Method for manufacturing semiconductor substrate |
EP07021589.2A EP1921673B1 (en) | 2006-11-10 | 2007-11-06 | Method for manufacturing semiconductor substrate |
CN201510117172.1A CN104701239B (zh) | 2006-11-10 | 2007-11-12 | 半导体衬底的制造方法 |
CNA2007101863107A CN101179014A (zh) | 2006-11-10 | 2007-11-12 | 半导体衬底的制造方法 |
US12/805,582 US8263478B2 (en) | 2006-11-10 | 2010-08-06 | Method for manufacturing semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006305657A JP5284576B2 (ja) | 2006-11-10 | 2006-11-10 | 半導体基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008124207A JP2008124207A (ja) | 2008-05-29 |
JP5284576B2 true JP5284576B2 (ja) | 2013-09-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006305657A Active JP5284576B2 (ja) | 2006-11-10 | 2006-11-10 | 半導体基板の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20080113489A1 (ja) |
EP (1) | EP1921673B1 (ja) |
JP (1) | JP5284576B2 (ja) |
CN (2) | CN101179014A (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153411A (ja) * | 2006-12-18 | 2008-07-03 | Shin Etsu Chem Co Ltd | Soi基板の製造方法 |
JP5452590B2 (ja) * | 2008-06-20 | 2014-03-26 | 天錫 李 | 薄膜製造方法 |
SG159484A1 (en) * | 2008-09-05 | 2010-03-30 | Semiconductor Energy Lab | Method of manufacturing soi substrate |
FR2961515B1 (fr) * | 2010-06-22 | 2012-08-24 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de silicium monocristallin sur une couche de polymere |
US20120009394A1 (en) * | 2010-07-07 | 2012-01-12 | MOS Art Pack Corporation | Bonding method and bonding substrate |
FR2980919B1 (fr) * | 2011-10-04 | 2014-02-21 | Commissariat Energie Atomique | Procede de double report de couche |
FR2992464B1 (fr) * | 2012-06-26 | 2015-04-03 | Soitec Silicon On Insulator | Procede de transfert d'une couche |
US9472518B2 (en) * | 2014-04-04 | 2016-10-18 | Micron Technology, Inc. | Semiconductor structures including carrier wafers and methods of using such semiconductor structures |
CN103952766B (zh) * | 2014-05-12 | 2016-08-24 | 山东大学 | 一种利用离子注入制备磷酸钛氧钾薄膜的方法 |
CN106960811A (zh) * | 2016-01-12 | 2017-07-18 | 沈阳硅基科技有限公司 | 一种soi硅片的制备方法 |
DE102016118268A1 (de) | 2016-09-27 | 2018-03-29 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines einkristallinen Substrats und mikromechanische Struktur |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2805999B2 (ja) | 1990-07-26 | 1998-09-30 | 信越化学工業株式会社 | 酸無水物基含有ジシロキサン及びその製造方法 |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
KR0165467B1 (ko) * | 1995-10-31 | 1999-02-01 | 김광호 | 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 |
JP2001525991A (ja) * | 1997-05-12 | 2001-12-11 | シリコン・ジェネシス・コーポレーション | 制御された劈開プロセス |
US5985742A (en) * | 1997-05-12 | 1999-11-16 | Silicon Genesis Corporation | Controlled cleavage process and device for patterned films |
JP3697106B2 (ja) | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
DE19854318A1 (de) * | 1998-11-25 | 2000-05-31 | Heidenhain Gmbh Dr Johannes | Längenmeßeinrichtung |
FR2797347B1 (fr) * | 1999-08-04 | 2001-11-23 | Commissariat Energie Atomique | Procede de transfert d'une couche mince comportant une etape de surfragililisation |
JP3907400B2 (ja) * | 2000-12-05 | 2007-04-18 | 株式会社巴川製紙所 | ダミーウェハー |
JP5110772B2 (ja) * | 2004-02-03 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体薄膜層を有する基板の製造方法 |
KR100634528B1 (ko) | 2004-12-03 | 2006-10-16 | 삼성전자주식회사 | 단결정 실리콘 필름의 제조방법 |
KR20060069022A (ko) * | 2004-12-17 | 2006-06-21 | 주식회사 실트론 | Soi 웨이퍼의 제조 방법 |
JP2006210898A (ja) * | 2004-12-28 | 2006-08-10 | Shin Etsu Chem Co Ltd | Soiウエーハの製造方法及びsoiウェーハ |
JP2008532317A (ja) | 2005-02-28 | 2008-08-14 | シリコン・ジェネシス・コーポレーション | レイヤ転送プロセス用の基板強化方法および結果のデバイス |
US20060240275A1 (en) * | 2005-04-25 | 2006-10-26 | Gadkaree Kishor P | Flexible display substrates |
FR2898431B1 (fr) * | 2006-03-13 | 2008-07-25 | Soitec Silicon On Insulator | Procede de fabrication de film mince |
-
2006
- 2006-11-10 JP JP2006305657A patent/JP5284576B2/ja active Active
-
2007
- 2007-11-02 US US11/979,446 patent/US20080113489A1/en not_active Abandoned
- 2007-11-06 EP EP07021589.2A patent/EP1921673B1/en active Active
- 2007-11-12 CN CNA2007101863107A patent/CN101179014A/zh active Pending
- 2007-11-12 CN CN201510117172.1A patent/CN104701239B/zh active Active
-
2010
- 2010-08-06 US US12/805,582 patent/US8263478B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN104701239B (zh) | 2018-01-26 |
EP1921673A2 (en) | 2008-05-14 |
EP1921673A3 (en) | 2011-09-28 |
CN104701239A (zh) | 2015-06-10 |
US8263478B2 (en) | 2012-09-11 |
JP2008124207A (ja) | 2008-05-29 |
US20080113489A1 (en) | 2008-05-15 |
US20100311221A1 (en) | 2010-12-09 |
CN101179014A (zh) | 2008-05-14 |
EP1921673B1 (en) | 2014-04-30 |
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