JP2004533726A5 - - Google Patents
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- Publication number
- JP2004533726A5 JP2004533726A5 JP2003509512A JP2003509512A JP2004533726A5 JP 2004533726 A5 JP2004533726 A5 JP 2004533726A5 JP 2003509512 A JP2003509512 A JP 2003509512A JP 2003509512 A JP2003509512 A JP 2003509512A JP 2004533726 A5 JP2004533726 A5 JP 2004533726A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- less
- semiconductor material
- void
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 14
- 239000000463 material Substances 0.000 claims 10
- 230000007547 defect Effects 0.000 claims 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 239000011800 void material Substances 0.000 claims 6
- 238000010438 heat treatment Methods 0.000 claims 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 2
- 239000012876 carrier material Substances 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000004927 fusion Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000004033 plastic Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10131249A DE10131249A1 (de) | 2001-06-28 | 2001-06-28 | Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material |
| PCT/EP2002/007125 WO2003003430A2 (de) | 2001-06-28 | 2002-06-27 | Film oder schicht aus halbleitendem material und verfahren zur herstellung des films oder der schicht |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004533726A JP2004533726A (ja) | 2004-11-04 |
| JP2004533726A5 true JP2004533726A5 (enExample) | 2005-09-02 |
| JP4331593B2 JP4331593B2 (ja) | 2009-09-16 |
Family
ID=7689811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003509512A Expired - Lifetime JP4331593B2 (ja) | 2001-06-28 | 2002-06-27 | 半導体材料からなるフィルムまたは層およびフィルムまたは層の製造方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7052948B2 (enExample) |
| EP (2) | EP1626440B1 (enExample) |
| JP (1) | JP4331593B2 (enExample) |
| KR (1) | KR100587997B1 (enExample) |
| CN (1) | CN100372060C (enExample) |
| AT (1) | ATE324670T1 (enExample) |
| DE (3) | DE10131249A1 (enExample) |
| TW (1) | TW575910B (enExample) |
| WO (1) | WO2003003430A2 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4277481B2 (ja) * | 2002-05-08 | 2009-06-10 | 日本電気株式会社 | 半導体基板の製造方法、半導体装置の製造方法 |
| JP2004039735A (ja) * | 2002-07-01 | 2004-02-05 | Fujitsu Ltd | 半導体基板及びその製造方法 |
| EP2280412A3 (en) * | 2002-11-29 | 2011-02-16 | STMicroelectronics S.r.l. | Semiconductor substrate comprising at least a buried insulating cavity |
| TW582099B (en) * | 2003-03-13 | 2004-04-01 | Ind Tech Res Inst | Method of adhering material layer on transparent substrate and method of forming single crystal silicon on transparent substrate |
| DE10326578B4 (de) | 2003-06-12 | 2006-01-19 | Siltronic Ag | Verfahren zur Herstellung einer SOI-Scheibe |
| DE10336271B4 (de) * | 2003-08-07 | 2008-02-07 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
| KR100605497B1 (ko) * | 2003-11-27 | 2006-07-28 | 삼성전자주식회사 | 에스오아이 기판들을 제조하는 방법들, 이를 사용하여반도체 소자들을 제조하는 방법들 및 그에 의해 제조된반도체 소자들 |
| DE602004027597D1 (de) | 2004-03-19 | 2010-07-22 | St Microelectronics Srl | Halbleiterdrucksensor und Verfahren zur Herstellung |
| JP4626175B2 (ja) * | 2004-04-09 | 2011-02-02 | 株式会社Sumco | Soi基板の製造方法 |
| DE102004021113B4 (de) * | 2004-04-29 | 2006-04-20 | Siltronic Ag | SOI-Scheibe und Verfahren zu ihrer Herstellung |
| DE102004030612B3 (de) * | 2004-06-24 | 2006-04-20 | Siltronic Ag | Halbleitersubstrat und Verfahren zu dessen Herstellung |
| KR100555569B1 (ko) | 2004-08-06 | 2006-03-03 | 삼성전자주식회사 | 절연막에 의해 제한된 채널영역을 갖는 반도체 소자 및 그제조방법 |
| US20100117152A1 (en) * | 2007-06-28 | 2010-05-13 | Chang-Woo Oh | Semiconductor devices |
| KR100843717B1 (ko) * | 2007-06-28 | 2008-07-04 | 삼성전자주식회사 | 플로팅 바디 소자 및 벌크 바디 소자를 갖는 반도체소자 및그 제조방법 |
| DE102004041378B4 (de) * | 2004-08-26 | 2010-07-08 | Siltronic Ag | Halbleiterscheibe mit Schichtstruktur mit geringem Warp und Bow sowie Verfahren zu ihrer Herstellung |
| DE602004010117D1 (de) * | 2004-09-16 | 2007-12-27 | St Microelectronics Srl | Verfahren zur Hestellung von zusammengestzten Halbleiterplättchen mittels Schichtübertragung |
| DE102004054564B4 (de) * | 2004-11-11 | 2008-11-27 | Siltronic Ag | Halbleitersubstrat und Verfahren zu dessen Herstellung |
| DE102004062356A1 (de) * | 2004-12-23 | 2006-07-13 | Siltronic Ag | Halbleiterscheibe mit einer Halbleiterschicht und einer darunter liegenden elektrisch isolierenden Schicht sowie Verfahren zu deren Herstellung |
| DE102005000826A1 (de) | 2005-01-05 | 2006-07-20 | Siltronic Ag | Halbleiterscheibe mit Silicium-Germanium-Schicht und Verfahren zu deren Herstellung |
| FR2884647B1 (fr) * | 2005-04-15 | 2008-02-22 | Soitec Silicon On Insulator | Traitement de plaques de semi-conducteurs |
| EP1719993A1 (en) * | 2005-05-06 | 2006-11-08 | STMicroelectronics S.r.l. | Integrated differential pressure sensor and manufacturing process thereof |
| CN1312328C (zh) * | 2005-05-16 | 2007-04-25 | 浙江大学 | 用于纳米光子技术的单晶硅纳米膜的制备方法 |
| US7629209B2 (en) * | 2005-10-17 | 2009-12-08 | Chunghwa Picture Tubes, Ltd. | Methods for fabricating polysilicon film and thin film transistors |
| JP4342503B2 (ja) * | 2005-10-20 | 2009-10-14 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置および半導体装置の検査方法 |
| KR101171189B1 (ko) * | 2005-10-21 | 2012-08-06 | 삼성전자주식회사 | 더미 글래스 기판과 표시장치의 제조방법 |
| FR2895563B1 (fr) * | 2005-12-22 | 2008-04-04 | Soitec Silicon On Insulator | Procede de simplification d'une sequence de finition et structure obtenue par le procede |
| US7799640B2 (en) * | 2006-09-28 | 2010-09-21 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device having trench charge compensation regions |
| KR100882932B1 (ko) * | 2007-06-11 | 2009-02-10 | 삼성전자주식회사 | 반도체 기판 및 그 제조 방법, 반도체 소자의 제조 방법 및이미지 센서의 제조 방법 |
| US20090280588A1 (en) * | 2008-05-06 | 2009-11-12 | Leo Mathew | Method of forming an electronic device including removing a differential etch layer |
| EP2161741B1 (en) * | 2008-09-03 | 2014-06-11 | Soitec | Method for fabricating a semiconductor on insulator substrate with reduced SECCO defect density |
| US20100187572A1 (en) * | 2009-01-26 | 2010-07-29 | Cho Hans S | Suspended mono-crystalline structure and method of fabrication from a heteroepitaxial layer |
| DE102009030298B4 (de) | 2009-06-24 | 2012-07-12 | Siltronic Ag | Verfahren zur lokalen Politur einer Halbleiterscheibe |
| JP5585056B2 (ja) * | 2009-11-19 | 2014-09-10 | 富士電機株式会社 | Son半導体基板の製造方法 |
| JP5891597B2 (ja) * | 2011-04-07 | 2016-03-23 | 富士電機株式会社 | 半導体基板または半導体装置の製造方法 |
| CN102294655A (zh) * | 2011-08-10 | 2011-12-28 | 开化美盛电子科技有限公司 | 一种粘固硅棒的载体的制作方法 |
| US9406551B2 (en) | 2012-09-27 | 2016-08-02 | Infineon Technologies Austria Ag | Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate |
| DE102015209889B4 (de) | 2015-05-29 | 2018-12-06 | Siltronic Ag | Strukturierte Halbleiterscheibe und Verfahren zu deren Herstellung |
| US10833175B2 (en) * | 2015-06-04 | 2020-11-10 | International Business Machines Corporation | Formation of dislocation-free SiGe finFET using porous silicon |
| EP3446111B1 (en) * | 2016-08-03 | 2022-03-09 | Hewlett-Packard Development Company, L.P. | Conductive wire disposed in a layer |
| DE102019106124A1 (de) | 2018-03-22 | 2019-09-26 | Infineon Technologies Ag | Bilden von Halbleitervorrichtungen in Siliciumcarbid |
| US10943813B2 (en) | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
| FR3091000B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Procede de fabrication d’un substrat pour un capteur d’image de type face avant |
| US11710656B2 (en) * | 2019-09-30 | 2023-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor-on-insulator (SOI) substrate |
| FR3108774B1 (fr) * | 2020-03-27 | 2022-02-18 | Soitec Silicon On Insulator | Procede de fabrication d’une structure composite comprenant une couche mince en sic monocristallin sur un substrat support en sic |
| CN113471289B (zh) * | 2021-05-19 | 2024-07-16 | 广东省大湾区集成电路与系统应用研究院 | 一种绝缘体上硅衬底及其制备方法、应用 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JP2901031B2 (ja) * | 1992-01-30 | 1999-06-02 | キヤノン株式会社 | 半導体基材及びその作製方法 |
| EP1251556B1 (en) * | 1992-01-30 | 2010-03-24 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate |
| US5427055A (en) | 1992-01-31 | 1995-06-27 | Canon Kabushiki Kaisha | Method for controlling roughness on surface of monocrystal |
| FR2715503B1 (fr) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation. |
| CN1132223C (zh) * | 1995-10-06 | 2003-12-24 | 佳能株式会社 | 半导体衬底及其制造方法 |
| FR2748851B1 (fr) * | 1996-05-15 | 1998-08-07 | Commissariat Energie Atomique | Procede de realisation d'une couche mince de materiau semiconducteur |
| DE19637182A1 (de) | 1996-09-12 | 1998-03-19 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte |
| SG65697A1 (en) * | 1996-11-15 | 1999-06-22 | Canon Kk | Process for producing semiconductor article |
| US6159825A (en) * | 1997-05-12 | 2000-12-12 | Silicon Genesis Corporation | Controlled cleavage thin film separation process using a reusable substrate |
| EP0895282A3 (en) * | 1997-07-30 | 2000-01-26 | Canon Kabushiki Kaisha | Method of preparing a SOI substrate by using a bonding process, and SOI substrate produced by the same |
| JP3324469B2 (ja) * | 1997-09-26 | 2002-09-17 | 信越半導体株式会社 | Soiウエーハの製造方法ならびにこの方法で製造されるsoiウエーハ |
| JP3472171B2 (ja) * | 1997-12-26 | 2003-12-02 | キヤノン株式会社 | 半導体基材のエッチング方法及びエッチング装置並びにそれを用いた半導体基材の作製方法 |
| JP3697106B2 (ja) * | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | 半導体基板の作製方法及び半導体薄膜の作製方法 |
| JP3618254B2 (ja) * | 1998-06-02 | 2005-02-09 | 信越半導体株式会社 | Soi基板の製造方法 |
| JP3762144B2 (ja) * | 1998-06-18 | 2006-04-05 | キヤノン株式会社 | Soi基板の作製方法 |
| TW465101B (en) * | 1998-09-04 | 2001-11-21 | Canon Kk | Semiconductor substrate and method for producing the same |
| EP0996145A3 (en) * | 1998-09-04 | 2000-11-08 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate |
| JP2000188269A (ja) * | 1998-10-16 | 2000-07-04 | Canon Inc | 部材の分離方法及び分離装置並びに基板の製造方法 |
| JP2000124092A (ja) * | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
| JP3453544B2 (ja) * | 1999-03-26 | 2003-10-06 | キヤノン株式会社 | 半導体部材の作製方法 |
| US6326279B1 (en) * | 1999-03-26 | 2001-12-04 | Canon Kabushiki Kaisha | Process for producing semiconductor article |
| JP4074051B2 (ja) * | 1999-08-31 | 2008-04-09 | 株式会社東芝 | 半導体基板およびその製造方法 |
| JP3994602B2 (ja) * | 1999-11-12 | 2007-10-24 | 信越半導体株式会社 | シリコン単結晶ウエーハおよびその製造方法並びにsoiウエーハ |
| US6660606B2 (en) * | 2000-09-29 | 2003-12-09 | Canon Kabushiki Kaisha | Semiconductor-on-insulator annealing method |
| US6489217B1 (en) * | 2001-07-03 | 2002-12-03 | Maxim Integrated Products, Inc. | Method of forming an integrated circuit on a low loss substrate |
-
2001
- 2001-06-28 DE DE10131249A patent/DE10131249A1/de not_active Withdrawn
-
2002
- 2002-06-27 AT AT02758281T patent/ATE324670T1/de not_active IP Right Cessation
- 2002-06-27 EP EP05021844A patent/EP1626440B1/de not_active Expired - Lifetime
- 2002-06-27 TW TW91114122A patent/TW575910B/zh not_active IP Right Cessation
- 2002-06-27 JP JP2003509512A patent/JP4331593B2/ja not_active Expired - Lifetime
- 2002-06-27 EP EP02758281A patent/EP1402567B1/de not_active Expired - Lifetime
- 2002-06-27 CN CNB028131630A patent/CN100372060C/zh not_active Expired - Lifetime
- 2002-06-27 WO PCT/EP2002/007125 patent/WO2003003430A2/de not_active Ceased
- 2002-06-27 DE DE50206581T patent/DE50206581D1/de not_active Expired - Lifetime
- 2002-06-27 US US10/481,537 patent/US7052948B2/en not_active Expired - Lifetime
- 2002-06-27 DE DE50211238T patent/DE50211238D1/de not_active Expired - Lifetime
- 2002-06-27 KR KR1020037016800A patent/KR100587997B1/ko not_active Expired - Lifetime
-
2006
- 2006-03-20 US US11/384,887 patent/US7417297B2/en not_active Expired - Lifetime
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