KR100587997B1 - 반도체 재료의 필름 또는 층, 및 그 필름 또는 층의제조방법 - Google Patents

반도체 재료의 필름 또는 층, 및 그 필름 또는 층의제조방법 Download PDF

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KR100587997B1
KR100587997B1 KR1020037016800A KR20037016800A KR100587997B1 KR 100587997 B1 KR100587997 B1 KR 100587997B1 KR 1020037016800 A KR1020037016800 A KR 1020037016800A KR 20037016800 A KR20037016800 A KR 20037016800A KR 100587997 B1 KR100587997 B1 KR 100587997B1
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layer
semiconductor material
silicon
film
heat treatment
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Korean (ko)
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KR20040015282A (ko
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머피브리안
발리크라인홀드
슈몰케류디거
폰암몬빌프리드
모리랜드제임스
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실트로닉 아게
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3223—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering using cavities formed by hydrogen or noble gas ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Manufacturing Of Electric Cables (AREA)
KR1020037016800A 2001-06-28 2002-06-27 반도체 재료의 필름 또는 층, 및 그 필름 또는 층의제조방법 Expired - Lifetime KR100587997B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10131249.0 2001-06-28
DE10131249A DE10131249A1 (de) 2001-06-28 2001-06-28 Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material
PCT/EP2002/007125 WO2003003430A2 (de) 2001-06-28 2002-06-27 Film oder schicht aus halbleitendem material und verfahren zur herstellung des films oder der schicht

Publications (2)

Publication Number Publication Date
KR20040015282A KR20040015282A (ko) 2004-02-18
KR100587997B1 true KR100587997B1 (ko) 2006-06-08

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KR1020037016800A Expired - Lifetime KR100587997B1 (ko) 2001-06-28 2002-06-27 반도체 재료의 필름 또는 층, 및 그 필름 또는 층의제조방법

Country Status (9)

Country Link
US (2) US7052948B2 (enExample)
EP (2) EP1626440B1 (enExample)
JP (1) JP4331593B2 (enExample)
KR (1) KR100587997B1 (enExample)
CN (1) CN100372060C (enExample)
AT (1) ATE324670T1 (enExample)
DE (3) DE10131249A1 (enExample)
TW (1) TW575910B (enExample)
WO (1) WO2003003430A2 (enExample)

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KR100605497B1 (ko) * 2003-11-27 2006-07-28 삼성전자주식회사 에스오아이 기판들을 제조하는 방법들, 이를 사용하여반도체 소자들을 제조하는 방법들 및 그에 의해 제조된반도체 소자들
DE602004027597D1 (de) 2004-03-19 2010-07-22 St Microelectronics Srl Halbleiterdrucksensor und Verfahren zur Herstellung
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DE102004021113B4 (de) * 2004-04-29 2006-04-20 Siltronic Ag SOI-Scheibe und Verfahren zu ihrer Herstellung
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KR100555569B1 (ko) 2004-08-06 2006-03-03 삼성전자주식회사 절연막에 의해 제한된 채널영역을 갖는 반도체 소자 및 그제조방법
US20100117152A1 (en) * 2007-06-28 2010-05-13 Chang-Woo Oh Semiconductor devices
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DE102005000826A1 (de) 2005-01-05 2006-07-20 Siltronic Ag Halbleiterscheibe mit Silicium-Germanium-Schicht und Verfahren zu deren Herstellung
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Also Published As

Publication number Publication date
US20040142542A1 (en) 2004-07-22
TW575910B (en) 2004-02-11
DE50211238D1 (de) 2007-12-27
US20060202310A1 (en) 2006-09-14
KR20040015282A (ko) 2004-02-18
EP1626440B1 (de) 2007-11-14
JP2004533726A (ja) 2004-11-04
CN1522461A (zh) 2004-08-18
US7417297B2 (en) 2008-08-26
EP1626440A1 (de) 2006-02-15
ATE324670T1 (de) 2006-05-15
DE50206581D1 (de) 2006-06-01
WO2003003430A2 (de) 2003-01-09
EP1402567A2 (de) 2004-03-31
WO2003003430A3 (de) 2003-03-20
JP4331593B2 (ja) 2009-09-16
CN100372060C (zh) 2008-02-27
US7052948B2 (en) 2006-05-30
EP1402567B1 (de) 2006-04-26
DE10131249A1 (de) 2002-05-23

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