TWI310962B - - Google Patents

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Publication number
TWI310962B
TWI310962B TW093100368A TW93100368A TWI310962B TW I310962 B TWI310962 B TW I310962B TW 093100368 A TW093100368 A TW 093100368A TW 93100368 A TW93100368 A TW 93100368A TW I310962 B TWI310962 B TW I310962B
Authority
TW
Taiwan
Prior art keywords
wafer
oxide film
bonded
thickness
soi
Prior art date
Application number
TW093100368A
Other languages
English (en)
Chinese (zh)
Other versions
TW200416813A (en
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200416813A publication Critical patent/TW200416813A/zh
Application granted granted Critical
Publication of TWI310962B publication Critical patent/TWI310962B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
TW093100368A 2003-01-10 2004-01-07 Method of producing SOI wafer and SOI wafer TW200416813A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003004833A JP4407127B2 (ja) 2003-01-10 2003-01-10 Ｓｏｉウエーハの製造方法

Publications (2)

Publication Number Publication Date
TW200416813A TW200416813A (en) 2004-09-01
TWI310962B true TWI310962B (enExample) 2009-06-11

Family

ID=32708980

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093100368A TW200416813A (en) 2003-01-10 2004-01-07 Method of producing SOI wafer and SOI wafer

Country Status (5)

Country Link
US (1) US20050118789A1 (enExample)
EP (1) EP1583145A4 (enExample)
JP (1) JP4407127B2 (enExample)
TW (1) TW200416813A (enExample)
WO (1) WO2004064145A1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1922732B (zh) * 2004-02-25 2010-06-09 S.O.I.Tec绝缘体上硅技术公司 光电检测装置
JP4830290B2 (ja) * 2004-11-30 2011-12-07 信越半導体株式会社 直接接合ウェーハの製造方法
JP5183874B2 (ja) * 2004-12-28 2013-04-17 信越化学工業株式会社 Ｓｏｉウエーハの製造方法
WO2007074552A1 (ja) * 2005-12-27 2007-07-05 Shin-Etsu Chemical Co., Ltd. Ｓｏｉウェーハの製造方法及びｓｏｉウェーハ
JP2007243038A (ja) * 2006-03-10 2007-09-20 Sumco Corp 貼り合わせウェーハ及びその製造方法
JP2008016534A (ja) * 2006-07-04 2008-01-24 Sumco Corp 貼り合わせウェーハの製造方法
SG144092A1 (en) * 2006-12-26 2008-07-29 Sumco Corp Method of manufacturing bonded wafer
FR2910702B1 (fr) * 2006-12-26 2009-04-03 Soitec Silicon On Insulator Procede de fabrication d'un substrat mixte
JP4820801B2 (ja) * 2006-12-26 2011-11-24 株式会社Ｓｕｍｃｏ 貼り合わせウェーハの製造方法
KR101358361B1 (ko) * 2006-12-26 2014-02-06 소이텍 절연체 상 반도체 구조물을 제조하는 방법
JP5185284B2 (ja) * 2006-12-26 2013-04-17 ソイテック 半導体オンインシュレータ構造体を製造する方法
KR101378933B1 (ko) * 2007-02-08 2014-04-11 소이텍 고도의 열 발산적인 기판의 제조 방법
KR101335713B1 (ko) 2007-02-28 2013-12-04 신에쓰 가가꾸 고교 가부시끼가이샤 접합 기판의 제조방법 및 접합 기판
JP5231460B2 (ja) 2007-03-19 2013-07-10 ソワテク パターニングされた薄いｓｏｉ
JP5135935B2 (ja) * 2007-07-27 2013-02-06 信越半導体株式会社 貼り合わせウエーハの製造方法
JP2011504655A (ja) * 2007-11-23 2011-02-10 エス． オー． アイ． テック シリコン オン インシュレーター テクノロジーズ 精密な酸化物の溶解
JP5466410B2 (ja) * 2008-02-14 2014-04-09 信越化学工業株式会社 Ｓｏｉ基板の表面処理方法
WO2009104060A1 (en) * 2008-02-20 2009-08-27 S.O.I.Tec Silicon On Insulator Technologies Oxidation after oxide dissolution
JP5263509B2 (ja) * 2008-09-19 2013-08-14 信越半導体株式会社 貼り合わせウェーハの製造方法
FR2938118B1 (fr) 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de fabrication d'un empilement de couches minces semi-conductrices
FR2938119B1 (fr) * 2008-10-30 2011-04-22 Soitec Silicon On Insulator Procede de detachement de couches semi-conductrices a basse temperature
JP5493345B2 (ja) 2008-12-11 2014-05-14 信越半導体株式会社 Ｓｏｉウェーハの製造方法
FR2941324B1 (fr) * 2009-01-22 2011-04-29 Soitec Silicon On Insulator Procede de dissolution de la couche d'oxyde dans la couronne d'une structure de type semi-conducteur sur isolant.
FR2964495A1 (fr) * 2010-09-02 2012-03-09 Soitec Silicon On Insulator Procede de fabrication d'une structure seoi multiple comportant une couche isolante ultrafine
FR2972564B1 (fr) 2011-03-08 2016-11-04 S O I Tec Silicon On Insulator Tech Procédé de traitement d'une structure de type semi-conducteur sur isolant
JP5802436B2 (ja) 2011-05-30 2015-10-28 信越半導体株式会社 貼り合わせウェーハの製造方法
US8653596B2 (en) * 2012-01-06 2014-02-18 International Business Machines Corporation Integrated circuit including DRAM and SRAM/logic
US8994085B2 (en) 2012-01-06 2015-03-31 International Business Machines Corporation Integrated circuit including DRAM and SRAM/logic
FR2998418B1 (fr) * 2012-11-20 2014-11-21 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semi-conducteur sur isolant
JP5780234B2 (ja) 2012-12-14 2015-09-16 信越半導体株式会社 Ｓｏｉウェーハの製造方法
FR3003684B1 (fr) * 2013-03-25 2015-03-27 Soitec Silicon On Insulator Procede de dissolution d'une couche de dioxyde de silicium.
FR3034565B1 (fr) 2015-03-30 2017-03-31 Soitec Silicon On Insulator Procede de fabrication d'une structure presentant une couche dielectrique enterree d'epaisseur uniforme

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3522482B2 (ja) * 1997-02-24 2004-04-26 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
FR2777115B1 (fr) * 1998-04-07 2001-07-13 Commissariat Energie Atomique Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede
JPH11307472A (ja) * 1998-04-23 1999-11-05 Shin Etsu Handotai Co Ltd 水素イオン剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP3395661B2 (ja) * 1998-07-07 2003-04-14 信越半導体株式会社 Ｓｏｉウエーハの製造方法
JP4273540B2 (ja) * 1998-07-21 2009-06-03 株式会社Ｓｕｍｃｏ 貼り合わせ半導体基板及びその製造方法
JP2000124092A (ja) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
FR2797713B1 (fr) * 1999-08-20 2002-08-02 Soitec Silicon On Insulator Procede de traitement de substrats pour la microelectronique et substrats obtenus par ce procede
JP4103391B2 (ja) * 1999-10-14 2008-06-18 信越半導体株式会社 Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
WO2001048825A1 (en) * 1999-12-24 2001-07-05 Shin-Etsu Handotai Co., Ltd. Method for manufacturing bonded wafer
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
JP2003204048A (ja) * 2002-01-09 2003-07-18 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
KR100511656B1 (ko) * 2002-08-10 2005-09-07 주식회사 실트론 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼
US7129123B2 (en) * 2002-08-27 2006-10-31 Shin-Etsu Handotai Co., Ltd. SOI wafer and a method for producing an SOI wafer
JP2004193515A (ja) * 2002-12-13 2004-07-08 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの製造方法
JP2004247610A (ja) * 2003-02-14 2004-09-02 Canon Inc 基板の製造方法
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
FR2855908B1 (fr) * 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention d'une structure comprenant au moins un substrat et une couche ultramince
US7052978B2 (en) * 2003-08-28 2006-05-30 Intel Corporation Arrangements incorporating laser-induced cleaving
US7018484B1 (en) * 2005-02-09 2006-03-28 Translucent Inc. Semiconductor-on-insulator silicon wafer and method of formation

Also Published As

Publication number Publication date
JP4407127B2 (ja) 2010-02-03
JP2004221198A (ja) 2004-08-05
US20050118789A1 (en) 2005-06-02
TW200416813A (en) 2004-09-01
EP1583145A4 (en) 2008-01-02
EP1583145A1 (en) 2005-10-05
WO2004064145A1 (ja) 2004-07-29

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