JP2012190865A5 - - Google Patents
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- Publication number
- JP2012190865A5 JP2012190865A5 JP2011050928A JP2011050928A JP2012190865A5 JP 2012190865 A5 JP2012190865 A5 JP 2012190865A5 JP 2011050928 A JP2011050928 A JP 2011050928A JP 2011050928 A JP2011050928 A JP 2011050928A JP 2012190865 A5 JP2012190865 A5 JP 2012190865A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- protective film
- manufacturing
- heating
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011050928A JP5659882B2 (ja) | 2011-03-09 | 2011-03-09 | 半導体装置の製造方法 |
| PCT/JP2011/076267 WO2012120731A1 (ja) | 2011-03-09 | 2011-11-15 | 半導体装置の製造方法 |
| EP11860559.1A EP2685488A4 (en) | 2011-03-09 | 2011-11-15 | METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT |
| KR1020137018075A KR20140031846A (ko) | 2011-03-09 | 2011-11-15 | 반도체 장치의 제조 방법 |
| CN201180067218.3A CN103548118A (zh) | 2011-03-09 | 2011-11-15 | 制造半导体器件的方法 |
| TW100143597A TW201237968A (en) | 2011-03-09 | 2011-11-28 | Production method for semiconductor device |
| US13/415,406 US8524585B2 (en) | 2011-03-09 | 2012-03-08 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011050928A JP5659882B2 (ja) | 2011-03-09 | 2011-03-09 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012190865A JP2012190865A (ja) | 2012-10-04 |
| JP2012190865A5 true JP2012190865A5 (enExample) | 2014-01-23 |
| JP5659882B2 JP5659882B2 (ja) | 2015-01-28 |
Family
ID=46795959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011050928A Expired - Fee Related JP5659882B2 (ja) | 2011-03-09 | 2011-03-09 | 半導体装置の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8524585B2 (enExample) |
| EP (1) | EP2685488A4 (enExample) |
| JP (1) | JP5659882B2 (enExample) |
| KR (1) | KR20140031846A (enExample) |
| CN (1) | CN103548118A (enExample) |
| TW (1) | TW201237968A (enExample) |
| WO (1) | WO2012120731A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104143503A (zh) * | 2013-05-07 | 2014-11-12 | 上海凯世通半导体有限公司 | 掺杂方法 |
| JP6376729B2 (ja) * | 2013-05-21 | 2018-08-22 | ローム株式会社 | 半導体装置の製造方法 |
| CN105161416A (zh) * | 2015-09-24 | 2015-12-16 | 株洲南车时代电气股份有限公司 | 一种半导体结构的掺杂方法 |
| JP6314965B2 (ja) * | 2015-12-11 | 2018-04-25 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| JP6853621B2 (ja) | 2016-03-17 | 2021-03-31 | 国立大学法人大阪大学 | 炭化珪素半導体装置の製造方法 |
| JP2020505766A (ja) * | 2017-01-17 | 2020-02-20 | ツェットエフ、フリードリッヒスハーフェン、アクチエンゲゼルシャフトＺｆ Ｆｒｉｅｄｒｉｃｈｓｈａｆｅｎ Ａｇ | 炭化珪素上に絶縁層を製造する方法 |
| CN110391317B (zh) * | 2019-07-29 | 2021-03-09 | 通威太阳能（成都）有限公司 | 一种单晶硅片的绒面制备方法 |
| JP7697313B2 (ja) * | 2021-08-17 | 2025-06-24 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5411907A (en) * | 1992-09-01 | 1995-05-02 | Taiwan Semiconductor Manufacturing Company | Capping free metal silicide integrated process |
| JPH0786199A (ja) | 1993-09-16 | 1995-03-31 | Fuji Electric Co Ltd | 炭化けい素半導体装置の製造方法 |
| US5858819A (en) * | 1994-06-15 | 1999-01-12 | Seiko Epson Corporation | Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device |
| JP3580052B2 (ja) * | 1996-10-17 | 2004-10-20 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| US5952679A (en) | 1996-10-17 | 1999-09-14 | Denso Corporation | Semiconductor substrate and method for straightening warp of semiconductor substrate |
| JP3760688B2 (ja) * | 1999-08-26 | 2006-03-29 | 富士電機ホールディングス株式会社 | 炭化けい素半導体素子の製造方法 |
| JP4961633B2 (ja) * | 2001-04-18 | 2012-06-27 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP4134575B2 (ja) * | 2002-02-28 | 2008-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| US7572741B2 (en) * | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
| JP5509520B2 (ja) * | 2006-12-21 | 2014-06-04 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| US7820534B2 (en) * | 2007-08-10 | 2010-10-26 | Mitsubishi Electric Corporation | Method of manufacturing silicon carbide semiconductor device |
| JP5266996B2 (ja) * | 2008-09-12 | 2013-08-21 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
| JP2010262952A (ja) * | 2009-04-29 | 2010-11-18 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
-
2011
- 2011-03-09 JP JP2011050928A patent/JP5659882B2/ja not_active Expired - Fee Related
- 2011-11-15 EP EP11860559.1A patent/EP2685488A4/en not_active Withdrawn
- 2011-11-15 KR KR1020137018075A patent/KR20140031846A/ko not_active Withdrawn
- 2011-11-15 CN CN201180067218.3A patent/CN103548118A/zh active Pending
- 2011-11-15 WO PCT/JP2011/076267 patent/WO2012120731A1/ja not_active Ceased
- 2011-11-28 TW TW100143597A patent/TW201237968A/zh unknown
-
2012
- 2012-03-08 US US13/415,406 patent/US8524585B2/en not_active Expired - Fee Related
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