JP2016516304A5 - - Google Patents
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- Publication number
- JP2016516304A5 JP2016516304A5 JP2016502429A JP2016502429A JP2016516304A5 JP 2016516304 A5 JP2016516304 A5 JP 2016516304A5 JP 2016502429 A JP2016502429 A JP 2016502429A JP 2016502429 A JP2016502429 A JP 2016502429A JP 2016516304 A5 JP2016516304 A5 JP 2016516304A5
- Authority
- JP
- Japan
- Prior art keywords
- atmosphere
- silicon layer
- annealed
- handle wafer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 12
- 229910052710 silicon Inorganic materials 0.000 claims 12
- 239000010703 silicon Substances 0.000 claims 12
- 239000012298 atmosphere Substances 0.000 claims 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 6
- 238000000137 annealing Methods 0.000 claims 4
- 239000012300 argon atmosphere Substances 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 4
- 238000003776 cleavage reaction Methods 0.000 claims 4
- 239000012212 insulator Substances 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 230000007017 scission Effects 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 3
- 239000001307 helium Substances 0.000 claims 3
- 229910052734 helium Inorganic materials 0.000 claims 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 3
- 230000007547 defect Effects 0.000 claims 2
- 230000003746 surface roughness Effects 0.000 claims 2
- 238000004439 roughness measurement Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361783928P | 2013-03-14 | 2013-03-14 | |
| US61/783,928 | 2013-03-14 | ||
| PCT/US2014/027418 WO2014152510A1 (en) | 2013-03-14 | 2014-03-14 | Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughness |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016516304A JP2016516304A (ja) | 2016-06-02 |
| JP2016516304A5 true JP2016516304A5 (enExample) | 2017-04-20 |
| JP6373354B2 JP6373354B2 (ja) | 2018-08-15 |
Family
ID=50440875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016502429A Active JP6373354B2 (ja) | 2013-03-14 | 2014-03-14 | ライトポイント欠陥と表面粗さを低減するための半導体オンインシュレータウエハの製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9202711B2 (enExample) |
| JP (1) | JP6373354B2 (enExample) |
| KR (1) | KR102027205B1 (enExample) |
| CN (1) | CN105431936B (enExample) |
| DE (1) | DE112014001279B4 (enExample) |
| TW (1) | TWI598961B (enExample) |
| WO (1) | WO2014152510A1 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015112308A1 (en) | 2014-01-23 | 2015-07-30 | Sunedison Semiconductor Limited | High resistivity soi wafers and a method of manufacturing thereof |
| US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
| US9899499B2 (en) | 2014-09-04 | 2018-02-20 | Sunedison Semiconductor Limited (Uen201334164H) | High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss |
| US10381260B2 (en) | 2014-11-18 | 2019-08-13 | GlobalWafers Co., Inc. | Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers |
| EP3221885B1 (en) | 2014-11-18 | 2019-10-23 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
| US10224233B2 (en) | 2014-11-18 | 2019-03-05 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation |
| JP6517360B2 (ja) | 2015-03-03 | 2019-05-22 | サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ | 膜応力を制御可能なシリコン基板の上に電荷トラップ用多結晶シリコン膜を成長させる方法 |
| US9881832B2 (en) | 2015-03-17 | 2018-01-30 | Sunedison Semiconductor Limited (Uen201334164H) | Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof |
| JP6637515B2 (ja) | 2015-03-17 | 2020-01-29 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 半導体オン・インシュレータ構造の製造において使用するための熱的に安定した電荷トラップ層 |
| JP2016201454A (ja) * | 2015-04-09 | 2016-12-01 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法 |
| CN114496732B (zh) | 2015-06-01 | 2023-03-03 | 环球晶圆股份有限公司 | 制造绝缘体上硅锗的方法 |
| WO2016196060A1 (en) | 2015-06-01 | 2016-12-08 | Sunedison Semiconductor Limited | A method of manufacturing semiconductor-on-insulator |
| KR102424963B1 (ko) | 2015-07-30 | 2022-07-25 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
| EP3378094B1 (en) | 2015-11-20 | 2021-09-15 | Globalwafers Co., Ltd. | Manufacturing method of smoothing a semiconductor surface |
| FR3046877B1 (fr) * | 2016-01-14 | 2018-01-19 | Soitec | Procede de lissage de la surface d'une structure |
| US10622247B2 (en) | 2016-02-19 | 2020-04-14 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a buried high resistivity layer |
| US9831115B2 (en) | 2016-02-19 | 2017-11-28 | Sunedison Semiconductor Limited (Uen201334164H) | Process flow for manufacturing semiconductor on insulator structures in parallel |
| WO2017142704A1 (en) | 2016-02-19 | 2017-08-24 | Sunedison Semiconductor Limited | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface |
| US10573550B2 (en) | 2016-03-07 | 2020-02-25 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof |
| WO2017155808A1 (en) | 2016-03-07 | 2017-09-14 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof |
| WO2017155804A1 (en) | 2016-03-07 | 2017-09-14 | Sunedison Semiconductor Limited | Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment |
| EP3758050A1 (en) | 2016-03-07 | 2020-12-30 | GlobalWafers Co., Ltd. | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof |
| EP3995608A1 (en) | 2016-06-08 | 2022-05-11 | GlobalWafers Co., Ltd. | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
| US10269617B2 (en) | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
| JP6831911B2 (ja) | 2016-10-26 | 2021-02-17 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
| JP6801105B2 (ja) | 2016-12-05 | 2020-12-16 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 高抵抗シリコンオンインシュレータ構造及びその製造方法 |
| EP3562978B1 (en) | 2016-12-28 | 2021-03-10 | Sunedison Semiconductor Limited | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield |
| FR3061988B1 (fr) * | 2017-01-13 | 2019-11-01 | Soitec | Procede de lissage de surface d'un substrat semiconducteur sur isolant |
| JP7034186B2 (ja) | 2017-07-14 | 2022-03-11 | サンエディソン・セミコンダクター・リミテッド | 絶縁体上半導体構造の製造方法 |
| CN111406129A (zh) * | 2017-12-21 | 2020-07-10 | 环球晶圆股份有限公司 | 处理单晶硅铸锭以改善激光散射环状/核状图案的方法 |
| JP7160943B2 (ja) | 2018-04-27 | 2022-10-25 | グローバルウェーハズ カンパニー リミテッド | 半導体ドナー基板からの層移転を容易にする光アシスト板状体形成 |
| CN112262467B (zh) | 2018-06-08 | 2024-08-09 | 环球晶圆股份有限公司 | 将硅薄层移转的方法 |
| CN112420915B (zh) * | 2020-11-23 | 2022-12-23 | 济南晶正电子科技有限公司 | 复合衬底的制备方法、复合薄膜及电子元器件 |
| CN115884589A (zh) * | 2021-09-27 | 2023-03-31 | 长鑫存储技术有限公司 | 一种半导体结构及其制备方法 |
| US20250069945A1 (en) | 2023-08-24 | 2025-02-27 | Globalwafers Co., Ltd. | Methods of preparing silicon-on-insulator structures using epitaxial wafers |
| FR3159469A1 (fr) * | 2024-02-15 | 2025-08-22 | Soitec | Procédé de lissage des surfaces libres et rugueuses d’une pluralité de substrats de silicium sur isolant |
| US20250293073A1 (en) | 2024-03-18 | 2025-09-18 | Globalwafers Co., Ltd. | Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structures |
| WO2026006271A1 (en) | 2024-06-28 | 2026-01-02 | Globalwafers Co., Ltd. | Methods for controlling flatness of handle structures for use in semiconductor-on-insulator structures |
| WO2026015619A1 (en) | 2024-07-10 | 2026-01-15 | Globalwafers Co., Ltd. | Methods of processing semiconductor-on-insulator structures using clean-and-etch operation |
| US20260015728A1 (en) | 2024-07-10 | 2026-01-15 | Globalwafers Co., Ltd. | Systems and methods for reactor apparatus control during semiconductor wafer processes |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| DE69334324D1 (de) * | 1992-01-30 | 2010-05-06 | Canon Kk | Herstellungsverfahren für Halbleitersubstrat |
| JPH07106512A (ja) | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| FR2777115B1 (fr) | 1998-04-07 | 2001-07-13 | Commissariat Energie Atomique | Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede |
| JP3358550B2 (ja) * | 1998-07-07 | 2002-12-24 | 信越半導体株式会社 | Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ |
| US6743495B2 (en) * | 2001-03-30 | 2004-06-01 | Memc Electronic Materials, Inc. | Thermal annealing process for producing silicon wafers with improved surface characteristics |
| JP2004533125A (ja) * | 2001-06-22 | 2004-10-28 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | イオン注入によるイントリンシックゲッタリングを有するシリコン・オン・インシュレータ構造体を製造する方法 |
| WO2003046993A1 (fr) * | 2001-11-29 | 2003-06-05 | Shin-Etsu Handotai Co.,Ltd. | Procede de production de plaquettes soi |
| US20040060899A1 (en) * | 2002-10-01 | 2004-04-01 | Applied Materials, Inc. | Apparatuses and methods for treating a silicon film |
| JP2006210899A (ja) * | 2004-12-28 | 2006-08-10 | Shin Etsu Chem Co Ltd | Ｓｏｉウエーハの製造方法及びｓｏｉウェーハ |
| JP2006294737A (ja) * | 2005-04-07 | 2006-10-26 | Sumco Corp | Ｓｏｉ基板の製造方法及びその製造における剥離ウェーハの再生処理方法。 |
| JP2007059704A (ja) * | 2005-08-25 | 2007-03-08 | Sumco Corp | 貼合せ基板の製造方法及び貼合せ基板 |
| EP1981063B1 (en) * | 2005-12-27 | 2021-04-07 | Shin-Etsu Chemical Co., Ltd. | Process for producing a soi wafer |
| JP5082299B2 (ja) * | 2006-05-25 | 2012-11-28 | 株式会社Ｓｕｍｃｏ | 半導体基板の製造方法 |
| JP5143477B2 (ja) * | 2007-05-31 | 2013-02-13 | 信越化学工業株式会社 | Ｓｏｉウエーハの製造方法 |
| JP2010098167A (ja) * | 2008-10-17 | 2010-04-30 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法 |
| JP2012510180A (ja) * | 2008-11-26 | 2012-04-26 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | シリコン−オン−インシュレータ構造体を処理する方法 |
| JP5310004B2 (ja) * | 2009-01-07 | 2013-10-09 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| US8080464B2 (en) * | 2009-12-29 | 2011-12-20 | MEMC Electronics Materials, Inc, | Methods for processing silicon on insulator wafers |
| JP5541136B2 (ja) * | 2010-12-15 | 2014-07-09 | 信越半導体株式会社 | 貼り合わせｓｏｉウエーハの製造方法 |
-
2014
- 2014-03-13 US US14/209,083 patent/US9202711B2/en active Active
- 2014-03-14 WO PCT/US2014/027418 patent/WO2014152510A1/en not_active Ceased
- 2014-03-14 JP JP2016502429A patent/JP6373354B2/ja active Active
- 2014-03-14 DE DE112014001279.3T patent/DE112014001279B4/de active Active
- 2014-03-14 CN CN201480026992.3A patent/CN105431936B/zh active Active
- 2014-03-14 KR KR1020157029121A patent/KR102027205B1/ko active Active
- 2014-03-14 TW TW103109754A patent/TWI598961B/zh active
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