JP6373354B2 - ライトポイント欠陥と表面粗さを低減するための半導体オンインシュレータウエハの製造方法 - Google Patents

ライトポイント欠陥と表面粗さを低減するための半導体オンインシュレータウエハの製造方法 Download PDF

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JP6373354B2
JP6373354B2 JP2016502429A JP2016502429A JP6373354B2 JP 6373354 B2 JP6373354 B2 JP 6373354B2 JP 2016502429 A JP2016502429 A JP 2016502429A JP 2016502429 A JP2016502429 A JP 2016502429A JP 6373354 B2 JP6373354 B2 JP 6373354B2
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silicon
atmosphere
dielectric layer
silicon layer
layer
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JP2016516304A (ja
JP2016516304A5 (enExample
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リウ・チンミン
ジェフリー・ルイス・リバート
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SunEdison Semiconductor Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Element Separation (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
JP2016502429A 2013-03-14 2014-03-14 ライトポイント欠陥と表面粗さを低減するための半導体オンインシュレータウエハの製造方法 Active JP6373354B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361783928P 2013-03-14 2013-03-14
US61/783,928 2013-03-14
PCT/US2014/027418 WO2014152510A1 (en) 2013-03-14 2014-03-14 Semiconductor-on-insulator wafer manufacturing method for reducing light point defects and surface roughness

Publications (3)

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JP2016516304A JP2016516304A (ja) 2016-06-02
JP2016516304A5 JP2016516304A5 (enExample) 2017-04-20
JP6373354B2 true JP6373354B2 (ja) 2018-08-15

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US (1) US9202711B2 (enExample)
JP (1) JP6373354B2 (enExample)
KR (1) KR102027205B1 (enExample)
CN (1) CN105431936B (enExample)
DE (1) DE112014001279B4 (enExample)
TW (1) TWI598961B (enExample)
WO (1) WO2014152510A1 (enExample)

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FR3046877B1 (fr) * 2016-01-14 2018-01-19 Soitec Procede de lissage de la surface d'une structure
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WO2017155804A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
US11114332B2 (en) 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
WO2017155806A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
CN111201341B (zh) 2016-06-08 2023-04-04 环球晶圆股份有限公司 具有经改进的机械强度的高电阻率单晶硅锭及晶片
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
EP4723861A2 (en) 2016-10-26 2026-04-08 GlobalWafers Co., Ltd. High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
CN115714130A (zh) 2016-12-05 2023-02-24 环球晶圆股份有限公司 高电阻率绝缘体上硅结构及其制造方法
CN114093764B (zh) 2016-12-28 2025-07-22 太阳能爱迪生半导体有限公司 单晶硅晶片
FR3061988B1 (fr) * 2017-01-13 2019-11-01 Soitec Procede de lissage de surface d'un substrat semiconducteur sur isolant
SG11201913769RA (en) 2017-07-14 2020-01-30 Sunedison Semiconductor Ltd Method of manufacture of a semiconductor on insulator structure
WO2019125810A1 (en) 2017-12-21 2019-06-27 Globalwafers Co., Ltd. Method of treating a single crystal silicon ingot to improve the lls ring/core pattern
JP7160943B2 (ja) 2018-04-27 2022-10-25 グローバルウェーハズ カンパニー リミテッド 半導体ドナー基板からの層移転を容易にする光アシスト板状体形成
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Also Published As

Publication number Publication date
KR102027205B1 (ko) 2019-10-01
KR20150132383A (ko) 2015-11-25
TWI598961B (zh) 2017-09-11
CN105431936A (zh) 2016-03-23
DE112014001279B4 (de) 2019-01-24
JP2016516304A (ja) 2016-06-02
TW201448046A (zh) 2014-12-16
US20140273405A1 (en) 2014-09-18
DE112014001279T5 (de) 2015-11-26
CN105431936B (zh) 2018-07-13
WO2014152510A1 (en) 2014-09-25
US9202711B2 (en) 2015-12-01

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