JP2014508405A5 - - Google Patents
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- Publication number
- JP2014508405A5 JP2014508405A5 JP2013551383A JP2013551383A JP2014508405A5 JP 2014508405 A5 JP2014508405 A5 JP 2014508405A5 JP 2013551383 A JP2013551383 A JP 2013551383A JP 2013551383 A JP2013551383 A JP 2013551383A JP 2014508405 A5 JP2014508405 A5 JP 2014508405A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer
- metal
- device layer
- sacrificial oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052751 metal Inorganic materials 0.000 claims description 125
- 239000002184 metal Substances 0.000 claims description 125
- 229910052710 silicon Inorganic materials 0.000 claims description 113
- 239000010703 silicon Substances 0.000 claims description 113
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 50
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 46
- 239000012212 insulator Substances 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 29
- 229910052759 nickel Inorganic materials 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 7
- 239000002244 precipitate Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000003252 repetitive effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 217
- 235000012431 wafers Nutrition 0.000 description 134
- 125000004429 atom Chemical group 0.000 description 61
- 230000007547 defect Effects 0.000 description 24
- 230000032798 delamination Effects 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 14
- 238000009499 grossing Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000011109 contamination Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000007689 inspection Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001307 helium Chemical group 0.000 description 1
- 229910052734 helium Chemical group 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002815 nickel Chemical group 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161437993P | 2011-01-31 | 2011-01-31 | |
| US61/437,993 | 2011-01-31 | ||
| US13/354,788 US8796116B2 (en) | 2011-01-31 | 2012-01-20 | Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods |
| US13/354,788 | 2012-01-20 | ||
| PCT/US2012/022970 WO2012106210A2 (en) | 2011-01-31 | 2012-01-27 | Methods for reducing the metal content in the device layer of soi structures and soi structures produced by such methods |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014508405A JP2014508405A (ja) | 2014-04-03 |
| JP2014508405A5 true JP2014508405A5 (enExample) | 2015-02-26 |
| JP5976013B2 JP5976013B2 (ja) | 2016-08-23 |
Family
ID=46576658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013551383A Active JP5976013B2 (ja) | 2011-01-31 | 2012-01-27 | Ｓｏｉ構造体のデバイス層中の金属含有量の減少方法、およびこのような方法により製造されるｓｏｉ構造体 |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US8796116B2 (enExample) |
| EP (1) | EP2671247B1 (enExample) |
| JP (1) | JP5976013B2 (enExample) |
| KR (1) | KR101871534B1 (enExample) |
| CN (1) | CN103339713B (enExample) |
| MY (1) | MY166803A (enExample) |
| SG (1) | SG191966A1 (enExample) |
| TW (1) | TW201250838A (enExample) |
| WO (1) | WO2012106210A2 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9064789B2 (en) * | 2013-08-12 | 2015-06-23 | International Business Machines Corporation | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates |
| WO2015112308A1 (en) | 2014-01-23 | 2015-07-30 | Sunedison Semiconductor Limited | High resistivity soi wafers and a method of manufacturing thereof |
| US9853133B2 (en) * | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
| US9899499B2 (en) | 2014-09-04 | 2018-02-20 | Sunedison Semiconductor Limited (Uen201334164H) | High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss |
| US10381260B2 (en) | 2014-11-18 | 2019-08-13 | GlobalWafers Co., Inc. | Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers |
| EP3221885B1 (en) | 2014-11-18 | 2019-10-23 | GlobalWafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
| US10224233B2 (en) | 2014-11-18 | 2019-03-05 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation |
| JP6517360B2 (ja) | 2015-03-03 | 2019-05-22 | サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ | 膜応力を制御可能なシリコン基板の上に電荷トラップ用多結晶シリコン膜を成長させる方法 |
| US9881832B2 (en) | 2015-03-17 | 2018-01-30 | Sunedison Semiconductor Limited (Uen201334164H) | Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof |
| JP6637515B2 (ja) | 2015-03-17 | 2020-01-29 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 半導体オン・インシュレータ構造の製造において使用するための熱的に安定した電荷トラップ層 |
| CN114496732B (zh) | 2015-06-01 | 2023-03-03 | 环球晶圆股份有限公司 | 制造绝缘体上硅锗的方法 |
| WO2016196060A1 (en) | 2015-06-01 | 2016-12-08 | Sunedison Semiconductor Limited | A method of manufacturing semiconductor-on-insulator |
| EP3378094B1 (en) | 2015-11-20 | 2021-09-15 | Globalwafers Co., Ltd. | Manufacturing method of smoothing a semiconductor surface |
| US9806025B2 (en) * | 2015-12-29 | 2017-10-31 | Globalfoundries Inc. | SOI wafers with buried dielectric layers to prevent Cu diffusion |
| US10622247B2 (en) | 2016-02-19 | 2020-04-14 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a buried high resistivity layer |
| US9831115B2 (en) | 2016-02-19 | 2017-11-28 | Sunedison Semiconductor Limited (Uen201334164H) | Process flow for manufacturing semiconductor on insulator structures in parallel |
| WO2017142704A1 (en) | 2016-02-19 | 2017-08-24 | Sunedison Semiconductor Limited | High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface |
| WO2017155808A1 (en) | 2016-03-07 | 2017-09-14 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof |
| WO2017155804A1 (en) | 2016-03-07 | 2017-09-14 | Sunedison Semiconductor Limited | Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment |
| EP3758050A1 (en) | 2016-03-07 | 2020-12-30 | GlobalWafers Co., Ltd. | Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof |
| US10573550B2 (en) | 2016-03-07 | 2020-02-25 | Globalwafers Co., Ltd. | Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof |
| EP3995608A1 (en) | 2016-06-08 | 2022-05-11 | GlobalWafers Co., Ltd. | High resistivity single crystal silicon ingot and wafer having improved mechanical strength |
| US10269617B2 (en) | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
| FR3057705B1 (fr) * | 2016-10-13 | 2019-04-12 | Soitec | Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant |
| JP6831911B2 (ja) | 2016-10-26 | 2021-02-17 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板 |
| JP6801105B2 (ja) | 2016-12-05 | 2020-12-16 | グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． | 高抵抗シリコンオンインシュレータ構造及びその製造方法 |
| EP3562978B1 (en) | 2016-12-28 | 2021-03-10 | Sunedison Semiconductor Limited | Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield |
| WO2018125673A2 (en) * | 2016-12-28 | 2018-07-05 | Invensas Bonding Technologies, Inc | Processing stacked substrates |
| JP7034186B2 (ja) | 2017-07-14 | 2022-03-11 | サンエディソン・セミコンダクター・リミテッド | 絶縁体上半導体構造の製造方法 |
| CN107946231B (zh) * | 2017-11-22 | 2020-06-16 | 上海华力微电子有限公司 | 一种FDSOI器件SOI和bulk区域浅槽形貌优化方法 |
| US10964664B2 (en) | 2018-04-20 | 2021-03-30 | Invensas Bonding Technologies, Inc. | DBI to Si bonding for simplified handle wafer |
| JP7160943B2 (ja) | 2018-04-27 | 2022-10-25 | グローバルウェーハズ カンパニー リミテッド | 半導体ドナー基板からの層移転を容易にする光アシスト板状体形成 |
| CN112262467B (zh) | 2018-06-08 | 2024-08-09 | 环球晶圆股份有限公司 | 将硅薄层移转的方法 |
| US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
| US12525572B2 (en) | 2021-03-31 | 2026-01-13 | Adeia Semiconductor Bonding Technologies Inc. | Direct bonding and debonding of carrier |
| US11798802B2 (en) * | 2022-02-11 | 2023-10-24 | Globalwafers Co., Ltd. | Methods for stripping and cleaning semiconductor structures |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4824698A (en) * | 1987-12-23 | 1989-04-25 | General Electric Company | High temperature annealing to improve SIMOX characteristics |
| JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
| JPH07106512A (ja) | 1993-10-04 | 1995-04-21 | Sharp Corp | 分子イオン注入を用いたｓｉｍｏｘ処理方法 |
| US5478758A (en) | 1994-06-03 | 1995-12-26 | At&T Corp. | Method of making a getterer for multi-layer wafers |
| JP3729955B2 (ja) | 1996-01-19 | 2005-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH09260288A (ja) * | 1996-01-19 | 1997-10-03 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| US5888858A (en) | 1996-01-20 | 1999-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
| JPH1167778A (ja) * | 1997-08-19 | 1999-03-09 | Sumitomo Metal Ind Ltd | Ｓｏｉ半導体ウエーハの製造方法 |
| US7256104B2 (en) * | 2003-05-21 | 2007-08-14 | Canon Kabushiki Kaisha | Substrate manufacturing method and substrate processing apparatus |
| US7294561B2 (en) | 2003-08-14 | 2007-11-13 | Ibis Technology Corporation | Internal gettering in SIMOX SOI silicon substrates |
| US7084048B2 (en) * | 2004-05-07 | 2006-08-01 | Memc Electronic Materials, Inc. | Process for metallic contamination reduction in silicon wafers |
| EP2078307B1 (en) * | 2006-11-02 | 2015-03-25 | Imec | Removal of impurities from semiconductor device layers |
-
2012
- 2012-01-20 US US13/354,788 patent/US8796116B2/en active Active
- 2012-01-27 CN CN201280007174.XA patent/CN103339713B/zh active Active
- 2012-01-27 WO PCT/US2012/022970 patent/WO2012106210A2/en not_active Ceased
- 2012-01-27 MY MYPI2013002736A patent/MY166803A/en unknown
- 2012-01-27 KR KR1020137020296A patent/KR101871534B1/ko active Active
- 2012-01-27 EP EP12706356.8A patent/EP2671247B1/en active Active
- 2012-01-27 JP JP2013551383A patent/JP5976013B2/ja active Active
- 2012-01-27 SG SG2013053798A patent/SG191966A1/en unknown
- 2012-01-31 TW TW101103124A patent/TW201250838A/zh unknown
-
2013
- 2013-02-08 US US13/762,967 patent/US20130168836A1/en not_active Abandoned
- 2013-02-08 US US13/762,974 patent/US20130168802A1/en not_active Abandoned
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