KR101871534B1 - Soi 구조체의 디바이스 층 내의 금속의 양을 감소시키기 위한 방법과 그 방법에 의해 제조된 soi 구조체 - Google Patents

Soi 구조체의 디바이스 층 내의 금속의 양을 감소시키기 위한 방법과 그 방법에 의해 제조된 soi 구조체 Download PDF

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KR101871534B1
KR101871534B1 KR1020137020296A KR20137020296A KR101871534B1 KR 101871534 B1 KR101871534 B1 KR 101871534B1 KR 1020137020296 A KR1020137020296 A KR 1020137020296A KR 20137020296 A KR20137020296 A KR 20137020296A KR 101871534 B1 KR101871534 B1 KR 101871534B1
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layer
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device layer
silicon
sacrificial oxide
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KR20140018872A (ko
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알렉시스 그라베
로렌스 피. 플래너리
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썬에디슨, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies

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  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020137020296A 2011-01-31 2012-01-27 Soi 구조체의 디바이스 층 내의 금속의 양을 감소시키기 위한 방법과 그 방법에 의해 제조된 soi 구조체 Active KR101871534B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161437993P 2011-01-31 2011-01-31
US61/437,993 2011-01-31
US13/354,788 US8796116B2 (en) 2011-01-31 2012-01-20 Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
US13/354,788 2012-01-20
PCT/US2012/022970 WO2012106210A2 (en) 2011-01-31 2012-01-27 Methods for reducing the metal content in the device layer of soi structures and soi structures produced by such methods

Publications (2)

Publication Number Publication Date
KR20140018872A KR20140018872A (ko) 2014-02-13
KR101871534B1 true KR101871534B1 (ko) 2018-06-26

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US (3) US8796116B2 (enExample)
EP (1) EP2671247B1 (enExample)
JP (1) JP5976013B2 (enExample)
KR (1) KR101871534B1 (enExample)
CN (1) CN103339713B (enExample)
MY (1) MY166803A (enExample)
SG (1) SG191966A1 (enExample)
TW (1) TW201250838A (enExample)
WO (1) WO2012106210A2 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9064789B2 (en) * 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
WO2015112308A1 (en) 2014-01-23 2015-07-30 Sunedison Semiconductor Limited High resistivity soi wafers and a method of manufacturing thereof
US9853133B2 (en) * 2014-09-04 2017-12-26 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity silicon-on-insulator substrate
US9899499B2 (en) 2014-09-04 2018-02-20 Sunedison Semiconductor Limited (Uen201334164H) High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
US10381260B2 (en) 2014-11-18 2019-08-13 GlobalWafers Co., Inc. Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers
EP3221885B1 (en) 2014-11-18 2019-10-23 GlobalWafers Co., Ltd. High resistivity semiconductor-on-insulator wafer and a method of manufacturing
US10224233B2 (en) 2014-11-18 2019-03-05 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation
JP6517360B2 (ja) 2015-03-03 2019-05-22 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ 膜応力を制御可能なシリコン基板の上に電荷トラップ用多結晶シリコン膜を成長させる方法
US9881832B2 (en) 2015-03-17 2018-01-30 Sunedison Semiconductor Limited (Uen201334164H) Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof
JP6637515B2 (ja) 2015-03-17 2020-01-29 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 半導体オン・インシュレータ構造の製造において使用するための熱的に安定した電荷トラップ層
CN114496732B (zh) 2015-06-01 2023-03-03 环球晶圆股份有限公司 制造绝缘体上硅锗的方法
WO2016196060A1 (en) 2015-06-01 2016-12-08 Sunedison Semiconductor Limited A method of manufacturing semiconductor-on-insulator
EP3378094B1 (en) 2015-11-20 2021-09-15 Globalwafers Co., Ltd. Manufacturing method of smoothing a semiconductor surface
US9806025B2 (en) * 2015-12-29 2017-10-31 Globalfoundries Inc. SOI wafers with buried dielectric layers to prevent Cu diffusion
US10622247B2 (en) 2016-02-19 2020-04-14 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a buried high resistivity layer
US9831115B2 (en) 2016-02-19 2017-11-28 Sunedison Semiconductor Limited (Uen201334164H) Process flow for manufacturing semiconductor on insulator structures in parallel
WO2017142704A1 (en) 2016-02-19 2017-08-24 Sunedison Semiconductor Limited High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed on a substrate with a rough surface
WO2017155808A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
WO2017155804A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Method of manufacturing a semiconductor on insulator structure by a pressurized bond treatment
EP3758050A1 (en) 2016-03-07 2020-12-30 GlobalWafers Co., Ltd. Semiconductor on insulator structure comprising a low temperature flowable oxide layer and method of manufacture thereof
US10573550B2 (en) 2016-03-07 2020-02-25 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof
EP3995608A1 (en) 2016-06-08 2022-05-11 GlobalWafers Co., Ltd. High resistivity single crystal silicon ingot and wafer having improved mechanical strength
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
FR3057705B1 (fr) * 2016-10-13 2019-04-12 Soitec Procede de dissolution d'un oxyde enterre dans une plaquette de silicium sur isolant
JP6831911B2 (ja) 2016-10-26 2021-02-17 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 向上した電荷捕獲効率を有する高抵抗率シリコンオンインシュレータ基板
JP6801105B2 (ja) 2016-12-05 2020-12-16 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 高抵抗シリコンオンインシュレータ構造及びその製造方法
EP3562978B1 (en) 2016-12-28 2021-03-10 Sunedison Semiconductor Limited Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
WO2018125673A2 (en) * 2016-12-28 2018-07-05 Invensas Bonding Technologies, Inc Processing stacked substrates
JP7034186B2 (ja) 2017-07-14 2022-03-11 サンエディソン・セミコンダクター・リミテッド 絶縁体上半導体構造の製造方法
CN107946231B (zh) * 2017-11-22 2020-06-16 上海华力微电子有限公司 一种FDSOI器件SOI和bulk区域浅槽形貌优化方法
US10964664B2 (en) 2018-04-20 2021-03-30 Invensas Bonding Technologies, Inc. DBI to Si bonding for simplified handle wafer
JP7160943B2 (ja) 2018-04-27 2022-10-25 グローバルウェーハズ カンパニー リミテッド 半導体ドナー基板からの層移転を容易にする光アシスト板状体形成
CN112262467B (zh) 2018-06-08 2024-08-09 环球晶圆股份有限公司 将硅薄层移转的方法
US10943813B2 (en) * 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
US12525572B2 (en) 2021-03-31 2026-01-13 Adeia Semiconductor Bonding Technologies Inc. Direct bonding and debonding of carrier
US11798802B2 (en) * 2022-02-11 2023-10-24 Globalwafers Co., Ltd. Methods for stripping and cleaning semiconductor structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007536738A (ja) 2004-05-07 2007-12-13 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコンウエハ中の金属汚染低減のための方法
US20090273010A1 (en) 2006-11-02 2009-11-05 Interuniversitair Microelektronica Centrum Vzw (Imec) Removal of impurities from semiconductor device layers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824698A (en) * 1987-12-23 1989-04-25 General Electric Company High temperature annealing to improve SIMOX characteristics
JP2617798B2 (ja) 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
JPH07106512A (ja) 1993-10-04 1995-04-21 Sharp Corp 分子イオン注入を用いたｓｉｍｏｘ処理方法
US5478758A (en) 1994-06-03 1995-12-26 At&T Corp. Method of making a getterer for multi-layer wafers
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09260288A (ja) * 1996-01-19 1997-10-03 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6548382B1 (en) * 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
JPH1167778A (ja) * 1997-08-19 1999-03-09 Sumitomo Metal Ind Ltd Ｓｏｉ半導体ウエーハの製造方法
US7256104B2 (en) * 2003-05-21 2007-08-14 Canon Kabushiki Kaisha Substrate manufacturing method and substrate processing apparatus
US7294561B2 (en) 2003-08-14 2007-11-13 Ibis Technology Corporation Internal gettering in SIMOX SOI silicon substrates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007536738A (ja) 2004-05-07 2007-12-13 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコンウエハ中の金属汚染低減のための方法
US20090273010A1 (en) 2006-11-02 2009-11-05 Interuniversitair Microelektronica Centrum Vzw (Imec) Removal of impurities from semiconductor device layers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Jun-Ichiro FURIHATA et al., ‘Heavy-Metal(Fi/Ni/Cu) Behavior in Ultrathin Bonded Silicon-On-Insulator(SOI) Wafers Evaluated Using Radioactive Isotope Tracers’, Jpn. J. Appl. Phys. Vol. 39 pp. 2251-2255*

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EP2671247A2 (en) 2013-12-11
JP5976013B2 (ja) 2016-08-23
US20130168836A1 (en) 2013-07-04
TW201250838A (en) 2012-12-16
MY166803A (en) 2018-07-23
KR20140018872A (ko) 2014-02-13
CN103339713B (zh) 2016-06-15
WO2012106210A2 (en) 2012-08-09
EP2671247B1 (en) 2015-07-22
CN103339713A (zh) 2013-10-02
WO2012106210A3 (en) 2012-11-01
US20120193753A1 (en) 2012-08-02
JP2014508405A (ja) 2014-04-03
US8796116B2 (en) 2014-08-05
US20130168802A1 (en) 2013-07-04
SG191966A1 (en) 2013-08-30

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