JP2012190865A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2012190865A JP2012190865A JP2011050928A JP2011050928A JP2012190865A JP 2012190865 A JP2012190865 A JP 2012190865A JP 2011050928 A JP2011050928 A JP 2011050928A JP 2011050928 A JP2011050928 A JP 2011050928A JP 2012190865 A JP2012190865 A JP 2012190865A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 230000001681 protective effect Effects 0.000 claims abstract description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 238000005468 ion implantation Methods 0.000 claims abstract description 18
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 25
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 8
- 229910001882 dioxygen Inorganic materials 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000004913 activation Effects 0.000 abstract description 16
- 238000000137 annealing Methods 0.000 abstract description 16
- 230000003746 surface roughness Effects 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 48
- 210000000746 body region Anatomy 0.000 description 21
- 239000012535 impurity Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
【解決手段】MOSFETの製造方法は、炭化珪素からなるエピタキシャル成長層付き基板8を準備する工程と、エピタキシャル成長層付き基板8にイオン注入を実施する工程と、イオン注入が実施されたエピタキシャル成長層付き基板8上に二酸化珪素からなる保護膜80を形成する工程と、保護膜80が形成されたエピタキシャル成長層付き基板8を、酸素原子を含むガスを含有する雰囲気中において1600℃以上の温度域に加熱する工程とを備えている。
【選択図】図5
Description
Claims (5)
- 炭化珪素からなる基板を準備する工程と、
前記基板にイオン注入を実施する工程と、
前記イオン注入が実施された前記基板上に二酸化珪素からなる保護膜を形成する工程と、
前記保護膜が形成された前記基板を、酸素原子を含むガスを含有する雰囲気中において1600℃以上の温度域に加熱する工程とを備えた、半導体装置の製造方法。 - 前記基板を加熱する工程では、前記保護膜が形成された前記基板が1700℃以下の温度域に加熱される、請求項1に記載の半導体装置の製造方法。
- 前記基板を加熱する工程では、前記保護膜が形成された前記基板が酸素ガスを含有する雰囲気中において加熱される、請求項1または2に記載の半導体装置の製造方法。
- 前記保護膜を形成する工程では、熱酸化により前記保護膜が形成される、請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- 前記保護膜を形成する工程と前記基板を加熱する工程とは単一の工程として実施される、請求項4に記載の半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011050928A JP5659882B2 (ja) | 2011-03-09 | 2011-03-09 | 半導体装置の製造方法 |
KR1020137018075A KR20140031846A (ko) | 2011-03-09 | 2011-11-15 | 반도체 장치의 제조 방법 |
PCT/JP2011/076267 WO2012120731A1 (ja) | 2011-03-09 | 2011-11-15 | 半導体装置の製造方法 |
CN201180067218.3A CN103548118A (zh) | 2011-03-09 | 2011-11-15 | 制造半导体器件的方法 |
EP11860559.1A EP2685488A4 (en) | 2011-03-09 | 2011-11-15 | METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT |
TW100143597A TW201237968A (en) | 2011-03-09 | 2011-11-28 | Production method for semiconductor device |
US13/415,406 US8524585B2 (en) | 2011-03-09 | 2012-03-08 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011050928A JP5659882B2 (ja) | 2011-03-09 | 2011-03-09 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012190865A true JP2012190865A (ja) | 2012-10-04 |
JP2012190865A5 JP2012190865A5 (ja) | 2014-01-23 |
JP5659882B2 JP5659882B2 (ja) | 2015-01-28 |
Family
ID=46795959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011050928A Expired - Fee Related JP5659882B2 (ja) | 2011-03-09 | 2011-03-09 | 半導体装置の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8524585B2 (ja) |
EP (1) | EP2685488A4 (ja) |
JP (1) | JP5659882B2 (ja) |
KR (1) | KR20140031846A (ja) |
CN (1) | CN103548118A (ja) |
TW (1) | TW201237968A (ja) |
WO (1) | WO2012120731A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014229708A (ja) * | 2013-05-21 | 2014-12-08 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
CN105161416A (zh) * | 2015-09-24 | 2015-12-16 | 株洲南车时代电气股份有限公司 | 一种半导体结构的掺杂方法 |
JP2017168719A (ja) * | 2016-03-17 | 2017-09-21 | 国立大学法人大阪大学 | 炭化珪素半導体装置の製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104143503A (zh) * | 2013-05-07 | 2014-11-12 | 上海凯世通半导体有限公司 | 掺杂方法 |
JP6314965B2 (ja) * | 2015-12-11 | 2018-04-25 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
KR102427555B1 (ko) * | 2017-01-17 | 2022-08-01 | 젯트에프 프리드리히스하펜 아게 | 규소 탄화물 상에 절연 층을 제조하는 방법 |
CN110391317B (zh) * | 2019-07-29 | 2021-03-09 | 通威太阳能(成都)有限公司 | 一种单晶硅片的绒面制备方法 |
Citations (4)
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JPH10125611A (ja) * | 1996-10-17 | 1998-05-15 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JP2002314071A (ja) * | 2001-04-18 | 2002-10-25 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JP2010067917A (ja) * | 2008-09-12 | 2010-03-25 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法および半導体装置 |
JP2010262952A (ja) * | 2009-04-29 | 2010-11-18 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
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JPH0786199A (ja) | 1993-09-16 | 1995-03-31 | Fuji Electric Co Ltd | 炭化けい素半導体装置の製造方法 |
EP0714140B1 (en) * | 1994-06-15 | 2003-09-03 | Seiko Epson Corporation | Method of manufacturing a semiconductor thin film transistor |
US5952679A (en) | 1996-10-17 | 1999-09-14 | Denso Corporation | Semiconductor substrate and method for straightening warp of semiconductor substrate |
JP3760688B2 (ja) * | 1999-08-26 | 2006-03-29 | 富士電機ホールディングス株式会社 | 炭化けい素半導体素子の製造方法 |
JP4134575B2 (ja) * | 2002-02-28 | 2008-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
US7572741B2 (en) * | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
JP5509520B2 (ja) * | 2006-12-21 | 2014-06-04 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
US7820534B2 (en) * | 2007-08-10 | 2010-10-26 | Mitsubishi Electric Corporation | Method of manufacturing silicon carbide semiconductor device |
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2011
- 2011-03-09 JP JP2011050928A patent/JP5659882B2/ja not_active Expired - Fee Related
- 2011-11-15 KR KR1020137018075A patent/KR20140031846A/ko not_active Application Discontinuation
- 2011-11-15 EP EP11860559.1A patent/EP2685488A4/en not_active Withdrawn
- 2011-11-15 CN CN201180067218.3A patent/CN103548118A/zh active Pending
- 2011-11-15 WO PCT/JP2011/076267 patent/WO2012120731A1/ja active Application Filing
- 2011-11-28 TW TW100143597A patent/TW201237968A/zh unknown
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2012
- 2012-03-08 US US13/415,406 patent/US8524585B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10125611A (ja) * | 1996-10-17 | 1998-05-15 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JP2002314071A (ja) * | 2001-04-18 | 2002-10-25 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JP2010067917A (ja) * | 2008-09-12 | 2010-03-25 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法および半導体装置 |
JP2010262952A (ja) * | 2009-04-29 | 2010-11-18 | Mitsubishi Electric Corp | 炭化珪素半導体装置の製造方法 |
Cited By (3)
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JP2014229708A (ja) * | 2013-05-21 | 2014-12-08 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
CN105161416A (zh) * | 2015-09-24 | 2015-12-16 | 株洲南车时代电气股份有限公司 | 一种半导体结构的掺杂方法 |
JP2017168719A (ja) * | 2016-03-17 | 2017-09-21 | 国立大学法人大阪大学 | 炭化珪素半導体装置の製造方法 |
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US8524585B2 (en) | 2013-09-03 |
US20120231617A1 (en) | 2012-09-13 |
EP2685488A4 (en) | 2014-10-22 |
TW201237968A (en) | 2012-09-16 |
EP2685488A1 (en) | 2014-01-15 |
KR20140031846A (ko) | 2014-03-13 |
WO2012120731A1 (ja) | 2012-09-13 |
CN103548118A (zh) | 2014-01-29 |
JP5659882B2 (ja) | 2015-01-28 |
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