EP2685488A4 - Production method for semiconductor device - Google Patents

Production method for semiconductor device

Info

Publication number
EP2685488A4
EP2685488A4 EP11860559.1A EP11860559A EP2685488A4 EP 2685488 A4 EP2685488 A4 EP 2685488A4 EP 11860559 A EP11860559 A EP 11860559A EP 2685488 A4 EP2685488 A4 EP 2685488A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
production method
production
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11860559.1A
Other languages
German (de)
French (fr)
Other versions
EP2685488A1 (en
Inventor
Takeyoshi Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP2685488A1 publication Critical patent/EP2685488A1/en
Publication of EP2685488A4 publication Critical patent/EP2685488A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
EP11860559.1A 2011-03-09 2011-11-15 Production method for semiconductor device Withdrawn EP2685488A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011050928A JP5659882B2 (en) 2011-03-09 2011-03-09 Manufacturing method of semiconductor device
PCT/JP2011/076267 WO2012120731A1 (en) 2011-03-09 2011-11-15 Production method for semiconductor device

Publications (2)

Publication Number Publication Date
EP2685488A1 EP2685488A1 (en) 2014-01-15
EP2685488A4 true EP2685488A4 (en) 2014-10-22

Family

ID=46795959

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11860559.1A Withdrawn EP2685488A4 (en) 2011-03-09 2011-11-15 Production method for semiconductor device

Country Status (7)

Country Link
US (1) US8524585B2 (en)
EP (1) EP2685488A4 (en)
JP (1) JP5659882B2 (en)
KR (1) KR20140031846A (en)
CN (1) CN103548118A (en)
TW (1) TW201237968A (en)
WO (1) WO2012120731A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104143503A (en) * 2013-05-07 2014-11-12 上海凯世通半导体有限公司 Doping method
JP6376729B2 (en) * 2013-05-21 2018-08-22 ローム株式会社 Manufacturing method of semiconductor device
CN105161416A (en) * 2015-09-24 2015-12-16 株洲南车时代电气股份有限公司 Method for doping semiconductor structure
JP6314965B2 (en) * 2015-12-11 2018-04-25 トヨタ自動車株式会社 Manufacturing method of semiconductor device
JP6853621B2 (en) * 2016-03-17 2021-03-31 国立大学法人大阪大学 Manufacturing method of silicon carbide semiconductor device
US10861694B2 (en) * 2017-01-17 2020-12-08 Zf Friedrichshafen Ag Method of manufacturing an insulation layer on silicon carbide
CN110391317B (en) * 2019-07-29 2021-03-09 通威太阳能（成都）有限公司 Textured surface preparation method of monocrystalline silicon wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067917A (en) * 2008-09-12 2010-03-25 Sumitomo Electric Ind Ltd Method of manufacturing semiconductor device, and semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5411907A (en) * 1992-09-01 1995-05-02 Taiwan Semiconductor Manufacturing Company Capping free metal silicide integrated process
JPH0786199A (en) 1993-09-16 1995-03-31 Fuji Electric Co Ltd Fabrication of silicon carbide semiconductor device
KR100306527B1 (en) * 1994-06-15 2002-06-26 구사마 사부로 Manufacturing method of thin film semiconductor device, thin film semiconductor device
US5952679A (en) 1996-10-17 1999-09-14 Denso Corporation Semiconductor substrate and method for straightening warp of semiconductor substrate
JP3580052B2 (en) * 1996-10-17 2004-10-20 株式会社デンソー Method for manufacturing silicon carbide semiconductor device
JP3760688B2 (en) * 1999-08-26 2006-03-29 富士電機ホールディングス株式会社 Method for manufacturing silicon carbide semiconductor device
JP4961633B2 (en) * 2001-04-18 2012-06-27 株式会社デンソー Method for manufacturing silicon carbide semiconductor device
JP4134575B2 (en) * 2002-02-28 2008-08-20 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
US7572741B2 (en) * 2005-09-16 2009-08-11 Cree, Inc. Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
JP5509520B2 (en) * 2006-12-21 2014-06-04 富士電機株式会社 Method for manufacturing silicon carbide semiconductor device
US7820534B2 (en) * 2007-08-10 2010-10-26 Mitsubishi Electric Corporation Method of manufacturing silicon carbide semiconductor device
JP2010262952A (en) * 2009-04-29 2010-11-18 Mitsubishi Electric Corp Method for manufacturing silicon carbide semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010067917A (en) * 2008-09-12 2010-03-25 Sumitomo Electric Ind Ltd Method of manufacturing semiconductor device, and semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
COOPER J A JR ET AL: "A Self-Aligned Process for High-Voltage, Short-Channel Vertical DMOSFETs in 4H-SiC", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, vol. 51, no. 10, 1 October 2004 (2004-10-01), pages 1721 - 1725, XP011119342, ISSN: 0018-9383, DOI: 10.1109/TED.2004.835622 *
ZHAO F ET AL: "Study of SiO2 encapsulation for aluminum and phosphorus implant activation in 4H-SiC", MATERIALS LETTERS, NORTH HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, vol. 64, no. 23, 15 December 2010 (2010-12-15), pages 2593 - 2596, XP027356325, ISSN: 0167-577X, [retrieved on 20100825] *

Also Published As

Publication number Publication date
JP2012190865A (en) 2012-10-04
WO2012120731A1 (en) 2012-09-13
JP5659882B2 (en) 2015-01-28
KR20140031846A (en) 2014-03-13
CN103548118A (en) 2014-01-29
US8524585B2 (en) 2013-09-03
US20120231617A1 (en) 2012-09-13
EP2685488A1 (en) 2014-01-15
TW201237968A (en) 2012-09-16

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