JP2014123667A5 - - Google Patents
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- Publication number
- JP2014123667A5 JP2014123667A5 JP2012279752A JP2012279752A JP2014123667A5 JP 2014123667 A5 JP2014123667 A5 JP 2014123667A5 JP 2012279752 A JP2012279752 A JP 2012279752A JP 2012279752 A JP2012279752 A JP 2012279752A JP 2014123667 A5 JP2014123667 A5 JP 2014123667A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- nitride film
- manufacturing
- forming
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052581 Si3N4 Inorganic materials 0.000 claims 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012279752A JP6106908B2 (ja) | 2012-12-21 | 2012-12-21 | 半導体装置の製造方法 |
| US14/102,639 US9396927B2 (en) | 2012-12-21 | 2013-12-11 | Method for fabricating semiconductor device |
| US15/180,851 US9818838B2 (en) | 2012-12-21 | 2016-06-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012279752A JP6106908B2 (ja) | 2012-12-21 | 2012-12-21 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014123667A JP2014123667A (ja) | 2014-07-03 |
| JP2014123667A5 true JP2014123667A5 (enExample) | 2016-02-18 |
| JP6106908B2 JP6106908B2 (ja) | 2017-04-05 |
Family
ID=50975093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012279752A Active JP6106908B2 (ja) | 2012-12-21 | 2012-12-21 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US9396927B2 (enExample) |
| JP (1) | JP6106908B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6197344B2 (ja) * | 2013-04-18 | 2017-09-20 | 住友電気工業株式会社 | 半導体装置 |
| JP6241915B2 (ja) * | 2013-07-31 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| CN104409431B (zh) * | 2014-10-24 | 2017-07-04 | 苏州能讯高能半导体有限公司 | 一种半导体器件 |
| JP2016171162A (ja) * | 2015-03-12 | 2016-09-23 | 株式会社東芝 | 半導体装置 |
| JP2017079288A (ja) * | 2015-10-21 | 2017-04-27 | 住友電気工業株式会社 | 半導体装置の製造方法及び半導体装置 |
| JP6640687B2 (ja) * | 2016-09-09 | 2020-02-05 | 株式会社東芝 | 半導体装置 |
| JP7031282B2 (ja) * | 2017-12-20 | 2022-03-08 | 富士通株式会社 | 半導体装置及びその製造方法、高周波増幅器 |
| JP2019175913A (ja) * | 2018-03-27 | 2019-10-10 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| CN112186031A (zh) * | 2020-09-25 | 2021-01-05 | 浙江大学杭州国际科创中心 | 一种等离子体的处理方法及其应用 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260372A (ja) * | 1996-03-21 | 1997-10-03 | Toshiba Corp | 半導体装置の絶縁膜の形成方法 |
| JP2006269673A (ja) * | 2005-03-23 | 2006-10-05 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| JP4912604B2 (ja) | 2005-03-30 | 2012-04-11 | 住友電工デバイス・イノベーション株式会社 | 窒化物半導体ｈｅｍｔおよびその製造方法。 |
| US8482035B2 (en) * | 2005-07-29 | 2013-07-09 | International Rectifier Corporation | Enhancement mode III-nitride transistors with single gate Dielectric structure |
| JP5186776B2 (ja) * | 2007-02-22 | 2013-04-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
| JP5345328B2 (ja) * | 2008-02-22 | 2013-11-20 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| US8213751B1 (en) * | 2008-11-26 | 2012-07-03 | Optonet Inc. | Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit |
| JP5531432B2 (ja) * | 2009-03-27 | 2014-06-25 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP2012033688A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
| JP6339762B2 (ja) * | 2013-01-17 | 2018-06-06 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置、高周波増幅器 |
-
2012
- 2012-12-21 JP JP2012279752A patent/JP6106908B2/ja active Active
-
2013
- 2013-12-11 US US14/102,639 patent/US9396927B2/en active Active
-
2016
- 2016-06-13 US US15/180,851 patent/US9818838B2/en active Active
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